• 한국세라믹학회지
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• 제44권2호
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• pp.110-115
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• 2007

The effects of $TiO_2$ in the glasses on the shrinkage and dielectric properties of BNT-glass composites have been investigated. Without $TiO_2$ addition, BNT-glass composite showed two humps in the shrinkage curve, which are related with crystallization of $BaTi(BO_3)_2\;and\;Bi_4Ti_3O_{12}$. However, the increase of $TiO_2$ addition resulted in the decrease of 2nd hump in the shrinkage. The increased dielectric constant with $TiO_2$ addition might be due to the reduced crystallization of $Bi_4Ti_3O_{12}$. A dielectric constant of 52, a quality factor of 5088 GHz, and a temperature coefficient of resonant frequency of $-0.16ppm/^{\circ}C$ were obtained for a specimen containing $TiO_2$-added glasses, without sacrificing the benefits of high ${\varepsilon}_r$ and low TCF of BNT ceramics.

• 한국진공학회지
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• 제8권2호
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• pp.93-101
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• 1999

The purposed of this paper is to investigate the electrical and thermal stability of Polyvinylidene fluoride(PVDF) organic thin films prepared by the vapor deposition method. The differential scanning calorimetry curve of the PVDF organic thin films prepared by increasing substrate temperature showed that the melting curve increased from $128^{\circ}C$ to $142^{\circ}C$. This result implied that the PVDF organic thin film prepared by increasing substrate temperature increased intermolecular force in the crystalline region. The anomalous properties in dielectric constant and dielectric loss at low frequency and high temperature were described for PVDF organic thin film containing impurity carriers. It was confirmed that in view of electric conductive characteristics the ohm's law is satisfied in the range of lower electric field and ln J was proportional to the electric field ln E as like the conventional property of ionic conduction in the range of higher electric field. It was confirmed that major carrier of conductivity was ions. The electrical stability was improved according to an increase of the substrate temperature. On the basis of this experimental result, it could be observed that the optimum temperature of substrate for the electrical and thermal stability was at $105^{\circ}C$.

• Structural Monitoring and Maintenance
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• 제3권3호
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• pp.297-314
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• 2016

As the study of internal corrosion of pipeline need a large number of experiments as well as long time, so there is a need for new computational technique to expand the spectrum of the results and to save time. The present work represents a new non-destructive evaluation (NDE) technique for detecting the internal corrosion inside pipeline by evaluating the dielectric properties of steel pipe at room temperature by using electrical capacitance sensor (ECS), then predict the effect of pipeline environment temperature (${\theta}$) on the corrosion rates by designing an efficient artificial neural network (ANN) architecture. ECS consists of number of electrodes mounted on the outer surface of pipeline, the sensor shape, electrode configuration, and the number of electrodes that comprise three key elements of two dimensional capacitance sensors are illustrated. The variation in the dielectric signatures was employed to design electrical capacitance sensor (ECS) with high sensitivity to detect such defects. The rules of 24-electrode sensor parameters such as capacitance, capacitance change, and change rate of capacitance are discussed by ANSYS and MATLAB, which are combined to simulate sensor characteristic. A feed-forward neural network (FFNN) structure are applied, trained and tested to predict the finite element (FE) results of corrosion rates under room temperature, and then used the trained FFNN to predict corrosion rates at different temperature using MATLAB neural network toolbox. The FE results are in excellent agreement with an FFNN results, thus validating the accuracy and reliability of the proposed technique and leads to better understanding of the corrosion mechanism under different pipeline environmental temperature.

• Applied Science and Convergence Technology
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• 제25권5호
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• pp.88-91
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• 2016

The $Pb[(Mg_{1/3}Ta_{2/3})_{0.7}Ti_{0.3}]O_3$+xwt%PbO systems at temperature of $1250^{\circ}C$ for 4 hours was successful synthesized. In this study, PbO-doped $Pb[(Mg_{1/3}Ta_{2/3})_{0.7}Ti_{0.3}]O_3$ systems with non-linear behaviors showed ordering-degree dependence at the low temperature range were prepared using the columbite precursor method. And the characteristic of remnant polarization vs. electric field were analyzed. The pyroelectric, dielectric and piezoelectric properties of partially disordered $Pb[(Mg_{1/3}Ta_{2/3})_{0.7}Ti_{0.3}]O_3$+xwt%PbO solid solutions were studied as a function of temperature, frequency, and electric field. It showed distinct features of temperature dependent of pyroelectric coefficient, spontaneous polarization and dielectric constant at about $50^{\circ}C$. The figure of merit was calculated as pyroelectric coefficient, dielectric constant and dissipation factor. It was found that the high voltage responsivity FV, high detectivity FD were $0.0373m^2/C$ and $0.6735{\times}10^{-4}Pa{-1/2}$, respectively, in the $Pb[(Mg_{1/3}Ta_{2/3})_{0.7}Ti_{0.3}]O_3$+3.0 wt%PbO system.

• 한국전기전자재료학회논문지
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• 제33권6호
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• pp.483-489
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• 2020

BaTiO₃ powder was synthesized by a solid-state reaction using BaCO₃ and TiO₂. Different calcination temperatures (800℃, 850℃, 900℃, and 950℃) were set to investigate their effects on the properties of BaTiO₃ powder. The synthesized BaTiO₃ phase was confirmed to be a single phase by XRD, and the tetragonality (c/a) and crystallite size were calculated. Thereafter, each calcinated BaTiO₃ was sintered at five different sintering temperatures (1,100℃, 1,150℃, 1,200℃, 1,250℃, and 1,300℃), and the tetragonality, density, porosity, dielectric constant, and grain size were measured. As the calcination temperature increased, the tetragonality and crystallite size also increased, to 1.008 and 66 nm, respectively, at 950℃. Moreover, most pellets showed increased density, dielectric constant, and tetragonality as the sintering temperature increased up to 1,250℃; the same parameters slightly decreased at 1,300℃. It is noteworthy that the tetragonality of BaTiO₃ at 1,250℃ exhibits a very high c/a value of 1.0084. In addition, the grain size and dielectric constant measured near the Curie temperature increased as the sintering temperature increased.

• 한국세라믹학회지
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• 제31권9호
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• pp.1005-1011
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• 1994

The three different composition of BaTi4O9, Ba2Ti9O20 and BaTi5O11 were prepared by coprecipitation process, and then the dielectric properties of these compounds were measured at low microwave frequencies. The powder showing high level of purity was synthesised by the coprecipition reaction of BaCl2 and TiCl4 where (NH4)2CO3 and NH4OH were used as a deflocculent. Followings are the result of this study: 1. The sintering temperature increased with increasing TiO2 content. 2. BaTi4O9 powder were synthesized as a single phase by this processing technique, but the resultant Ba2Ti9O20 and BaTi5O11 phase existed with Ba2Ti9O20 and BaTi5O11 phases. 3. Single phase BaTi4O9 showed high dielectric constant value of 35, high Q value of 8100.

• 한국전기전자재료학회논문지
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• 제25권5호
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• pp.366-371
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• 2012

In this paper, fabricated by MEMS uncooled micro-bolometer detector for the study in the infrared sensitivity enhancement. Absorption layer SiOx-Metal series MDTF (metal-dielectric thin film) by high absorption rate and has a high thermal coefficient of resistance, low noise characteristics were implemented. Then MDTF were made in a vacuum deposition method. And MDTF for the analysis of the physical properties of silicon wafers were fabricated, TCR (temperature coefficient of resistance) value was made in order to measure the glass wafer and FT-IR (Fourier Transform Infrared spectroscopy) values were made in order to measure the germanium window. The analyzed results of MDTF -3 [%/K] has more characteristics of the TCR. And 8~12 um wavelength region close to 70% in the absorption characteristic.

• 한국세라믹학회지
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• 제46권4호
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• pp.413-418
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• 2009

Glass systems based on Ca, Sr, Ba, and Zn modified alumino-boro silicates were investigated in order to improve the dielectric and mechanical properties of a typical LTCC (low temperature co-fired ceramic) which was developed for high frequency highly-integrated modules. The glass was prepared by a typical melting procedure and then mixed with cordierite fillers to fabricate glass/ceramic composite-type LTCC materials. The amount of cordierite filler was fixed at 50 volumetric%. For an optimal glass composition of 7.5% CaO, 7.5% BaO, 5% ZnO, 10% $Al_2O_3$, 30% $B_2O_3$, and 40% $SiO_2$ in mole ratio, the resultant LTCC composite showed a dielectric constant of 5.8 and a dielectric loss ($tan{\delta}$) of 0.0009 after firing at $900^{\circ}C$. An average bending strength of 160MPa was obtained for the optimal composition.

• E2M - 전기 전자와 첨단 소재
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• 제8권2호
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• pp.171-175
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• 1995

Optimum condition of remote plasma enhanced chemical vapor deposition using orthogonal array method was chosen. Characteristics of oxide films deposited by RPECVD with SiH$_{4}$ and N$_{2}$O gases were investigated. Etching rate of the optimized SiO$_{2}$ films in P-etchant was about 6[A/s] that was almost the same as that the high temperature thermal oxide. The films showed high dielectric breakdown field of more than 7[MV/cm] and a resistivity of 8*10$^{13}$ [.ohmcm] around at 7[MV/cm]. The interface trap density of SiO$_{2}$/Si interface around the midgap derived from the high frequency C-V curve was about 5*10$^{10}$ [/cm$^{2}$eV]. It was observed that the dielectric constant of the optimized SiO$_{2}$ film was 4.29.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.74-77
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• 2004

[ $HfO_2$ ] dielectric layers were grown on the p-type Si(100) substrate by metalorganic molecular beam epitaxy(MOMBE). Hafnium $t-butoxide[Hf(O{\cdot}t-C_4H_9)_4]$ was used as a Hf precursor and Argon gas was used as a carrier gas. The thickness of the layers was measured by scanning electron microscopy (SEM) and high-resolution transmission electron measurement(HR-TEM). The properties of the $HfO_2$ layers were evaluated by X-ray diffraction(XRD), high frequency capacitance-voltage measurement(HF C-V), current-voltage measurement(I-V), and atomic force measurement(AFM). HF C-V measurements have shown that $HfO_2$ layer grown by MOMBE has a high dielectric constant(k=19-21). The properties of $HfO_2$ films are affected by various process variables such as substrate temperature, bubbler temperature, Ar, and $O_2$ gas flows. In this paper, we examined the relationship between the $O_2/Ar$ gas ratio and the electrical properties of $HfO_2$.