• Korean Journal of Materials Research
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• v.17 no.11
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• pp.574-579
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• 2007

Amorphous $BaTi_4O_9$ ($BT_4$) film was deposited on Pt/Si substrate by RF magnetron sputter and their dielectric properties and electrical properties are investigated. A cross sectional SEM image and AFM image of the surface of the amorphous $BT_4$ film deposited at room temperature showed the film was grown well on the substrate. The amorphous $BT_4$ film had a large dielectric constant of 32, which is similar to that of the crystalline $BT_4$ film. The leakage current density of the $BT_4$ film was low and a Poole-Frenkel emission was suggested as the leakage current mechanism. A positive quadratic voltage coefficient of capacitance (VCC) was obtained for the $BT_4$ film with a thickness of <70 nm and it could be due to the free carrier relaxation. However, a negative quadratic VCC was obtained for the films with a thickness ${\geq}96nm$, possibly due to the dipolar relaxation. The 55 nm-thick $BT_4$ film had a high capacitance density of $5.1fF/{\mu}m^2$ with a low leakage current density of $11.6nA/cm^2$ at 2 V. Its quadratic and linear VCCs were $244ppm/V^2$ and -52 ppm/V, respectively, with a low temperature coefficient of capacitance of $961ppm/^{\circ}C$ at 100 kHz. These results confirmed the potential suitability of the amorphous $BT_4$ film for use as a high performance metal-insulator-metal (MIM) capacitor.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2002.02a
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• pp.185-188
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• 2002

In the design of superconducting power equipments such as transformer, cable and fault current limit, knowledge of the dielectric behavior of both liquid and gaseous at very low temperatures is very importance. Especially, Electrical properties of liquid nitrogen($LN_{2}$) and gaseous nitrogen($GN_{2}$) have become of great interest again since the discovery of high temperature superconductors. However, many sources of $LN_{2}$and $GN_{2}$ problems in the test of pancake coil model arising form the deficiency of insulation data. Therefore, this paper describes the results of an experimental study on the ac breakdown voltage($V_{B}$) properties of $LN_2$ and Air under the electrode of simulated HTS pancake coil. The ac breakdown voltage of $GN_{2}$ have been measured by pancake coil-pancake coil gaps over the temperature range of 293 K to 77 K.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.494-498
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• 2002

HTS transformer experimentally. High temperature superconductors can only be applied against an engineering specification that has to be determined for each particular application form the design requirements for economic viability and for operation margins in service. High temperature superconducting(HTS) power apparatus are very promising candidates for application. Especially, these advantages make superconducting transformers very promising candidates for application in electrical power engineering and locomotives. In order to realize the HTS transformer, it is necessary to establish the high voltage insulation technique in cryogenic temperature. So far, insulation research of Pancake type HTS transformer is lacking nothing but insulation research of . solenoid type transformer consisted. Therefore, the composite insulation of double pancake coil type transformer are described and ac breakdown voltage characteristics of liquid nitrogen(LN$_2$) under HTS pancake coil electrode made by Bi-2223/Ag are studied. Breakdown in LN$_2$ is dominated electrode shape and distance. The relation between surface flashover voltage is considered for FRP. This research presented basis information of electrical insulation design for double pancake coil type HTS transformer.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.2
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• pp.60-66
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• 2001

($Ba_x$$Sr_{1-x}$)$TiO_3$ (x=0.9, 0.7, 0.5) thin films were prepared on ITO-coated glass by sol-gel method. Perovskite phase formation temperature of BST thin films seemed to be higher than $600^{\circ}C$. Peaks of perovskite phase shift to high diffraction angles as the Sr/(Ba+Sr) ratio was increased, due to the smaller ionic size of $Sr^{2+}$ than $Ba^{2+}$ . As a heating temperature was increased, the grain became coarser. And as Sr/(Ba + Sr) ratio was increased, the grain became finer. Dielectric constants of the BST(50/50) thin film are higher and dielectric losses of that are lower than those of the others. Dielectric constant and dielectric loss of the BST(50/50) thin film were 652 and 0.042 at 1kHz, respectively.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2013.05a
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• pp.97-97
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• 2013

We present a comprehensive study on the integration of h-BN with silicon MOSFET. Temperature dependent mobility modeling is used to discern the effects of top-gate dielectric on carrier transport and identify limiting factors of the system. The result indicates that coulomb scattering and surface roughness scattering are the dominant scattering mechanisms for silicon MOSFETs at relatively low temperature. Interposing a layer of h-BN between $SiO_2$ and Si effectively weakens coulomb scattering by separating carriers in the silicon inversion layer from the charged centers as 2-dimensional h-BN is relatively inert and is expected to be free of dangling bonds or surface charge traps owing to the strong, in-plane, ionic bonding of the planar hexagonal lattice structure, thus leading to a significant improvement in mobility relative to undecorated system. Furthermore, the atomically planar surface of h-BN also suppresses surface roughness scattering in this Si MOSFET system, resulting in a monotonously increasing mobility curve along with gate voltage, which is different from the traditional one with a extremum in a certain voltage. Alternatively, high-k dielectrics can lead to enhanced transport properties through dielectric screening. Modeling indicates that we can achieve even higher mobility by using h-BN decorated $HfO_2$ as gate dielectric in silicon MOSFETs instead of h-BN decorated $SiO_2$.

• Electrical & Electronic Materials
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• v.8 no.5
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• pp.611-618
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• 1995

The (Sr$_{1-x}$ .Ca$_{x}$)TiO$_{3}$+0.6[mol%]Nb$_{2}$O$_{5}$ (0.05.leq.x.leq.0.2) ceramics were fabricated to form semiconducting ceramics by sintering at about 1350[.deg. C] in a reducing atmosphere(N$_{2}$ gas). Metal oxides, CuO, was painted on the both surface of the specimens to diffuse to the grain boundary. They were annealed at 1100 [.deg. C] for 2 hours. The 2nd phase formed by thermal diffusing from the surface lead to a very high apparent dielectric constant. According to increase of the frequency as a functional of temperature, all specimens used in this study showed the dielectric relaxation, and the relaxation frequency was above 106 [Hz], it move to low frequency with increasing resistivity of grain. The specimens showed three kinds of conduction mechanisms in the temperature range 25-125 [.deg. C] as the current increased: the region I below 200 [V/cm] shows the ohmic conduction. The region rt between 200 [V/cm] and 2000 [V/cm] can be explained by the Poole-Frenkel emission theory, and the region III above 2000 [V/cm] is dominated by the tunneling effect.fect.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.298-298
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• 2007

Influence of $TiO_2$ on the dielectric properties of the $Bi(Nb_{0.7}Ta_{0.3})O_4$ ceramic with 7 wt% zinc borosilicate(ZBS) glass was investigated as a function of the $TiO_2$ contents with a view to applying this system to LTCC technology. The $Bi(Nb_{0.7}Ta_{0.3})O_4$ ceramic addition of 7 wt% ZBS glass ensured successful sintering below $900^{\circ}C$. But, TCF of $Bi(Nb_{0.7}Ta_{0.3})O_4$ ceramic is large negative values, respectively, it is necessary to adjust to zero TCF for practical applications Therefore, the addition of materials having positive TCF, such as $TiO_2$, might be an effective method for the improvement. In general, increasing addition of $TiO_2$ increased dielectric constant and TCF but it decreased the sinterability and $Q{\tiems}f$ value significantly due to the dielectric property and high sintering temperature of $TiO_2$. $Bi(Nb_{0.7}Ta_{0.3})O_4$ ceramic with 7 wt% ZBS glass and then addition 0.5 wt% $TiO_2$ sintered at $900^{\circ}C$ demonstrated 42 in the dielectric constant(${\varepsilon}_r$), 1,000 GHz in the $Q{\times}f$ value, and $10{\pm}5\;ppm/^{\circ}C$ in the temperature coefficient of resonant frequency(${\tau}_f$).

• Journal of IKEEE
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• v.26 no.1
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• pp.111-118
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• 2022

In this paper, we studied 4H-SiC CMOS that can be integrated with high-voltage SiC power devices. After designing the CMOS on a 4H-SiC substrate, we compared the electrical characteristics with the reliability of high temperature operation by TCAD simulation. In particular, it was confirmed that changing HfO₂ as the gate dielectric for reliable operation at high temperatures improves the thermal properties compared to SiO₂. By researching SiC CMOS devices, we can integrate high-power SiC power devices with SiC CMOS for excellent performance in terms of efficiency and cost of high-power systems.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.81-81
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• 2009

Non-sintered Alumina films were fabricated via inkjet printing processes without a high temperature sintering process. The packing density of these inkjet-printed alumina films measured around 60%. Polymer resin was infiltrated thru these non-sintered films in order to fill out the 40% of voids constituting the rest of the inkjet-printed films. The concept of inkjet-printed Alumina-Resin hybrid materials was designed in order to be applicable to the ceramic package substrates for 3D-system module integration which may possibly substitute LTCC-based 3D module integration. So, the dielectric properties of these inkjet-printed $Al_2O_3$ hybridmaterialsareofourgreatinterest. We have measured dielectric constant and dissipation factor of the inkjet-printed $Al_2O_3$-resinhybridfilmsbyvaryingtheamountofresininfiltratedthruthe$Al_2O_3$films.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.7
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• pp.419-423
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• 2015

Sintering, microstructure, thermal conductivity and microwave dielectric properties of xLiF-(1-x)MgO ceramics (x=0.03~0.10 mol) were investigated. The high density was obtained in the specimens of $x{\geq}0.06$, i.e., 0.04 LiF-0.96 MgO in mol, whereas the amount of 0.03 mol LiF was insufficient to densify. From the result that the contact flattening in the sintered specimen was observed, the densification occurred through the liquid-phase sintering. The specimen of x=0.06 showed the highest room-temperature thermal conductivity. Relative density, thermal conductivity, dielectric constant, and quality factor ($Q{\times}f$) of the specimen for x=0.06 sintered at $900^{\circ}C$ for 4 h were 97.8%, $39.2Wm^{-1}K^{-1}$, 9.45, and 14,671 GHz, respectively.