• 한국정보통신학회논문지
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• 제11권6호
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• pp.1115-1121
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• 2007

이온 빔 스퍼터법을 이용하여 저속성장으로 동시 증착에 의해 $Bi_2Sr_2Ca{_{n-1}}Cu_nO_x$(n=0,1,2) 박막을 제작하였다. Bi 2212 상은 기판온도 $750{\sim}795^{\circ}C$의 범위에서 나타났으며, $750^{\circ}C$보다 저온 측에서는 Bi 2201의 단일상이 존재하였다. 그러나, 조성과 관계되는 $PO_3$은 압력 변화에 대해서는 관찰되지 않았다. 그리고 $45{\sim}90K$의 임계온도(Tc)를 갖는 c축 배향한 고품질의 Bi 2212 박막을 얻었다. 소수의 박막에서는 소량의 CuO가 불순물로 관찰되었으며, 얻어진 모든 박막에서 $CaCuO_2$ 의 불순물 상은 관찰되지 않았다.

• 한국세라믹학회지
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• 제31권7호
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• pp.715-722
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• 1994

Off-axis supttering using shielder was used to efficiently prevent negative oxygen ions from resputtering deposited films. In this method, the substrate was located vertically to the target and shielded by the semicircled steel plate. By using this method, the resputtering could be reduced, and 2223 high-Tc phase could be formed at the lower substrate temperature and in the broader temperature region. As increasing the substrate temperature, 2212, 2223, 2212 superconducting phases were formed by turns. 2223 phase was formed above 2$\times$10-2 torr, and 2212 phase was formed above 4$\times$10-2 torr.

• 한국세라믹학회지
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• 제26권2호
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• pp.267-275
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• 1989

YBa2Cu3O7-x oxide superconductors were fabricated by sintering and hotisostatic pressing (HIP), and their microstructures and properties were compared with each other. Thougha part of the second phase was observed along grain boundaries, their structures were consisted of single (123) phase and they had many porosities. But, porosities were remakably reduced by Hiping and the densification was brought about. The structure of (123) compound also showed a number of twins, which are typical of high Tc superconductors. The on-set temperature of YBa2Cu3O7-x compound sintered at 96$0^{\circ}C$ in oxygen and hipped at 88$0^{\circ}C$ was highest, but that shwoed 0 resistance at 87$^{\circ}$K, which is a little lower than the compound sintered at 96$0^{\circ}C$. HIP treatment also increased the critical current density of as-sintered compound. However, its value was low, which may be ascribed to the many pores of starting-sintered compact and partially to the second phase along grain boundaries.

• Transactions on Electrical and Electronic Materials
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• 제6권4호
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• pp.186-189
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• 2005

We have fabricated superconducting HTSC ceramic thick films by chemical process. c-axis oriented HTSC thick films have been attempted bi-axially textured Ni tapes. The x-ray diffraction pattern of the HTSC thick films contained superconducting phase crystal. The critical temperature and critical current density was 110K.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.1238-1239
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• 2008

The high Tc supeconductor of ceramic oxides type was studied for finding its application field. The results reportaed in this paper on the stability of the ceramic superconductors and the resistance to ripening in the BCO liquid phase at elevated temperature opens a processing window for engineering the microstructure of large superconductor at the nanoscale level. The results suggest further that the introduction of highly efficient artifical pinning center to bulk ceramics superconductor.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권6호
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• pp.297-301
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• 2006

In the present work, we investigate the characteristics of new composition material, chalcogenide $Ge_1Se_1Te_2$ material in order to overcome the problems of conventional PRAM devices. The Tc of $Ge_1Se_1Te_2$ bulk was measured $231.503^{\circ}C$ with DSC analysis. For static DC test mode, at low voltage, two different resistances are observed. depending on the crystalline state of the phase-change resistor. In the first sweep, the as-deposited amorphous $Ge_1Se_1Te_2$ showed very high resistance. However when it reached the threshold voltage(about 11.8 V), the electrical resistance of device was drastically reduced through the formation of an electrically conducting path. The phase transition between the low conductive amorphous state and the high conductive crystal]me state was caused by the set and reset pulses respectively which fed through electrical signal. Set pulse has 4.3 V. 200 ns. then sample resistance is $80\sim100{\Omega}$. Reset pulse has 8.6 V 80 ns, then the sample resistance is $50{\sim}100K{\Omega}$. For such high resistance ratio of $R_{reset}/R_{set}$, we can expect high sensing margin reading the recorded data. We have confirmed that phase change properties of $Ge_1Se_1Te_2$ materials are closely related with the structure through the experiment of self-heating layers.

• Bulletin of the Korean Chemical Society
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• 제9권5호
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• pp.289-291
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• 1988

The ratio of trivalent to divalent copper has been determined by the redox titration for two superconducting phases of $YBa_2Cu^{3+}_{2x}Cu^{2+}_{3-2x}O_{6.5+x}$ with the onset temp. of 60K (x = 0.23 ${\pm}$ 0.01) and 90K (x = 0.35 ${\pm}$ 0.02), and for the insulating one (x ${\cong}$ 0) which was kept in an ambient atmosphere for 72 hrs. It is found that $T_c$, and the ratio of $Cu^{3+}/Cu^{2+}$ depend strongly on the annealing temperature and time. A typical orthorhombic phase can easily be obtained by a slow cooling or stepwise cooling at $PO_2$ = 1 atm, and shows a high Tc (ca. 90K) superconductivity.

• 대한전자공학회논문지TC
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• 제41권10호
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• pp.27-33
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• 2004

본 논문에서는 극성 결정 반송파 복원 알고리즘을 이용하여 고차 QAM에서 효율적으로 위상 및 주파수 오차를 보정하는 회로를 제안하였다. 제안된 회로는 전체적으로 디지털 동작을 하며 위상오차와 주파수 오차를 동시에 보정한다. 제안된 방법은 성상도상에서 회전하는 심볼의 각 속도에서 주파수 오차를 찾아내 역회전 시킨다. 제안된 회로는 입력된 신호의 구간평균을 취하여 가산성 백색 잡음 채널 환경 하에 효율적으로 대처하는 구조를 가지며 I와 Q축 하나의 정보만으로 위상 정보를 추정하여 하드웨어를 간소화 하였다. 회로설계 검증결과 ±35도의 위상오차와 0.25의 일반화된 주파수오차에서 보정을 하는 성능을 보였으며 15dB의 AWGN 환경 하에서도 높은 수렴 성능을 나타내었다.

• Journal of Electrical Engineering and Technology
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• 제1권3호
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• pp.371-375
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• 2006

Effects of $Ag_2O$ doping on the electromagnetic properties in the BiSrCaCuO superconductor. The electromagnetic properties of doped and undoped $Ag_2O$ in the BiSrCaCuO superconductor were evaluated to investigate the contribution of the pinning centers. It was confirmed experimentally that a larger amount of magnetic flux was trapped in the $Ag_2O$ doped sample than in the undoped one, indicating that the pinning centers of magnetic flux are related closely to the occurrence of the magnetic effect. We have fabricated superconductor ceramics by the chemical process. A high Tc superconductor with a nominal composition of $Bi_2Sr_2Ca_2Cu_3O_y$ was prepared by the organic metal salts method. Experimental results suggest that the intermediate phase formed before the formation of the superconductor phase may be the most important factor. The relation between electromagnetic properties of Bi HTS and the external applied magnetic field was studied. The electrical resistance of the superconductor was increased by the application of the external magnetic field. But the increase in the electrical resistance continues even after the removal of the magnetic field. The reason is as follows; the magnetic flux due to the external magnetic field penetrates through the superconductor and the penetrated magnetic flux is trapped after the removal of the magnetic flux. During the sintering, doped $Ag_2O$ was converted to Ag particles that were finely dispersed in superconductor samples. It is considered that the area where normal conduction takes place increases by adding $Ag_2O$ and the magnetic flux penetrating through the sample increases. The results suggested that $Ag_2O$ acts to amplify pinning centers of magnetic flux, contributing to the occurrence of the electromagnetic properties.

• 한국재료학회지
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• 제1권2호
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• pp.93-98
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• 1991

The as-grown $YBa_2Cu_3O_{7-x}$ superconducting thin films on MgO(100) substrate have been prepared by a reactive coevaporation method. The superconducting transition temperature, surface morphology and crystalline quality were examined as a function of the substrate temperature ranging from $450^{\circ}C$ to $590^{\circ}C$. From the reflection high energy electron diffraction (RHEED) analysis, it was found the film consisted of almost amorphous phase with a halo pattern deposited at the substrate temperature of $450^{\circ}C$. The film deposited at the substrate temperature of $510^{\circ}C$ consisted of polycrystalline phase, showing a broad ring pattern. On the other hand, for the film deposited at $590^{\circ}C$, RHEED showed spotty pattern indicating that this film consisted of single crystal phase. It has rough film surface due to the surface outgrowth. The surface outgrowth increased as the substrate temperature increased from $510^{\circ}C$ to $590^{\circ}C$. the surface outgrowth may be due to the anisotropic growth rate. The highest transition temperature obtained in this study was $Tc_{zero}$ of 83K with $Tc_{onset}$ of 88K for the film deposited at $590^{\circ}C$ using activated RF oxygen plasma.