• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2005년도 추계 학술대회
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• pp.197-202
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• 2005

Due to high permeability of the ferrite core, the characteristics of the ICP are expected to be greatly improved. We investigated the effect of the ferrite cores on conventional inductively coupled plasma. It was observed that the current and voltage in ike ICP antenna are slightly decreased and the power transfer efficiency is increased. However, due to eddy current and hysterisis loss, plasma density in the ICP with the ferrite cores is not increased. It seems that the ICP with the ferrite cores at low frequency (${\~}$100kHz) will be greatly improved since the losses at the low frequency can be negligible.

• 반도체디스플레이기술학회지
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• 제17권1호
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• pp.84-87
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• 2018

As the propeller end speed increases, the propeller surface is damaged in the process of bubble formation and dropout. It is intended to prevent the corrosion of the propeller by modifying the shape of the end through the winglet structure to mitigate the cavitation phenomenon. In the case of conventional SUS materials, the cost of production is so high that plastic materials are used to prevent corrosion. This paper aims to mitigate the cavitation by deforming the shape of the end through the winglet structure by using the SMC composite material of the propeller using the existing SUS.

• 반도체디스플레이기술학회지
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• 제17권3호
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• pp.21-26
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• 2018

In this paper, the switching characteristics of the active clamp type flyback converter, which is deemed suitable for the miniaturization of the external power supply for home appliance, were analyzed and the process of reducing the switching loss was explained. The active clamp type flyback converter operating in the DCM has confirmed that the surge voltage of the main switch does not occur and the turn-off / on loss of the switch do not occur in principle. Also, in the case of the switch for synchronous rectifier, it was showed that the switch current showed half-wave rectified sinusoidal characteristic, and the switching loss was reduced. The switching characteristics of the experimental results gathered from 120 W class prototype were compared with the theoretical waveform in the steady-state and it was confirmed that the power conversion efficiency of the active clamp type flyback converter was maintained high due to the reduction of the switching loss.

• JSTS:Journal of Semiconductor Technology and Science
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• 제15권4호
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• pp.437-444
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• 2015

A high output power voltage controlled oscillator (VCO) in the U-band was implemented using a 65 nm CMOS process. The proposed VCO used a transmission line to increase output voltage swing and overcome the limitations of CMOS technologies. Two varactor banks were used for fine tuning with a 5% frequency tuning range. The proposed VCO showed small variation in output voltage and operated at 51.55-54.18 GHz. The measured phase noises were -51.53 dBc/Hz, -91.84 dBc/Hz, and -101.07 dBc/Hz at offset frequencies of 10 kHz, 1 MHz, and 10 MHz, respectively, with stable output power. The chip area, including the output buffer, is $0.16{\times}0.16mm^2$ and the maximum output power was -0.11 dBm. The power consumption was 33.4 mW with a supply voltage of 1.2-V. The measured $FOM_P$ was -190.8 dBc/Hz.

• JSTS:Journal of Semiconductor Technology and Science
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• 제3권2호
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• pp.102-106
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• 2003

This paper describes novel low-power high-speed flip-flop called dual edge-triggered NAND keeper flip-flop (DETNKFF). The flip-flop achieves substantial power reduction by incorporating dual edge-triggered operation and by eliminating redundant transitions. It also minimizes the data-to-output latency by reducing the height of transistor stack on the critical path. Moreover, DETNKFF allows negative setup time to provide useful attribute of soft clock edge by incorporating the pulse-triggered operation. The proposed flip-flop was designed using a $0.35{\;}\mutextrm{m}$ CMOS technology. The simulation results indicate that, for the typical input switching activity of 0.3, DETNKFF reduces power consumption by as much as 21 %. Latency is also improved by about 6 % as compared to the conventional flip-flop. The improvement of power-delay product is also as much as 25 %.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 B
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• pp.1205-1207
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• 2004

AC plasma power supply is used to control a ozone generator and a air pollution gas. AC plasma power supply is composed of power semiconductor switch devices and control board adapted SHE(Selected Harmonic Elimination) PWM method. AC plasma power supply with sinusoidal VVVF(variable voltage and variable frequency) is realized. Its output voltage range is from 0 [V] to 20[kV] and output frequency range is from 8[kHz] to 20[kHz]. Using proposed system, AC high voltage and high frequency discharge is tested in the DBD(dieletric barrier discharge) reactor, and the space distribution of a its non-thermal plasma is observed. In spite of the increasement of voltage and frequency, the proposed system have a stable operation characteristics. It is verified by the experimental results.

• 한국진공학회지
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• 제13권2호
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• pp.59-64
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• 2004

반도체 레이저를 광원으로 사용하는 원자흡수분광 방법으로 금속증기의 증착 공정을 감시하는 연구를 수행하였다. 전자빔 가열 방식을 이용하여 gadolinium (Gd) 금속을 대량으로 증발시켰다. 파장 영역이 770-794 nm (중심파장 780 nm)인 반도체 레이저빔과 388-396 nm 영역의 제 2 고조파 빔을 진공용기에 입사시켜 증발되는 금속증기의 원자흡수 스펙트럼을 실시간으로 기록하였다. 흡수 스펙트럼을 분석하여 증기의 원자밀도를 구했다. 전자빔 출력을 변화시키면서 측정한 원자밀도를 수정 결정 모니터 장치를 사용하여 측정한 증착률과 비교하였다. 산업적으로 많이 사용되는 Ti 등의 증착 공정 감시에 이 실험에서 구현한 레이저 분광장치를 적용할 수 있다는 것을 제시하였다.

• 전력전자학회논문지
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• 제12권6호
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• pp.510-516
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• 2007

본 논문에서는 더 높은 에너지 효율을 요구하는 전자 기기들의 사용에 따른 고전력 밀도 AC/DC adapter를 위한 향상된 제어 방법을 제안한다. PFC (Power Factor Correction) 토폴로지는 BCM (Boundary Conduction Mode)제어 방식을 적용한 부스트 토폴로지를 기본으로 하였으며, DC/DC 토폴로지는 50% 고정 duty법과 함께 새롭게 제안된 Off-time 제어법을 적용한 하프브릿지 토폴로지를 기본으로 하였다. 이는 반도체 소자와 마그네틱 소자의 크기를 줄이는데 용이하다. 85W급 AC/DC 어뎁터(18.5V/4.6A)를 설계하여 실험한 결과 90%의 효율과 $36W/in^3$의 전력밀도가 측정되었고 무부하시 전력 손실은 0.5W를 달성하였다.

• 전력전자학회논문지
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• 제15권4호
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• pp.259-265
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• 2010

본 논문에서는 더 높은 에너지 효율을 요구하는 전자 기기들의 사용에 따른 고전력 밀도 AC/DC 어댑터의 구조를 제안한다. PFC (Power Factor Corrector) topology는 BCM (Boundary Conduction Mode)제어 방식을 적용한 Boost topology를 기본으로 하였으며, DC/DC topology는 주파수제어를 적용한 LLC 공진 컨버터를기본으로 하였다. 이는 반도체 소자 및 마그네틱 소자의 크기를 줄이는데 용이하다. 85W급 AC/DC adapter (18.5V/4.6A)를 설계하여 실험한 결과 $90V_{rms}$의 입력전압에서 90%의 효율과 $36W/in^3$의 전력밀도가 측정되었고 무부하시 전력 손실은 0.5W를 달성하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.472-472
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• 2011

The capacitive coupled plasma (CCP) has been extensively used in the semiconductor industry because it has not only good uniformity, but also low electron temperature. But CCP source has some problems, such as difficulty in varying the ion bombardment energy separately, low plasma density, and high processing pressure, etc. In this reason, dual frequency CCP has been investigated with a separate substrate biasing to control the plasma parameters and to obtain high etch rate with high etch selectivity. Especially, in this study, we studied on the etching of $SiO_2$ by using the pulse-time modulation in the dual-frequency CCP source composed of 60 MHz/ 2 MHz rf power. By using the combination of high /low rf powers, the differences in the gas dissociation, plasma density, and etch characteristics were investigated. Also, as the size of the semiconductor device is decreased to nano-scale, the etching of contact hole which has nano-scale higher aspect ratio is required. For the nano-scale contact hole etching by using continuous plasma, several etch problems such as bowing, sidewall taper, twist, mask faceting, erosion, distortions etc. occurs. To resolve these problems, etching in low process pressure, more sidewall passivation by using fluorocarbon-based plasma with high carbon ratio, low temperature processing, charge effect breaking, power modulation are needed. Therefore, in this study, to resolve these problems, we used the pulse-time modulated dual-frequency CCP system. Pulse plasma is generated by periodical turning the RF power On and Off state. We measured the etch rate, etch selectivity and etch profile by using a step profilometer and SEM. Also the X-ray photoelectron spectroscopic analysis on the surfaces etched by different duty ratio conditions correlate with the results above.