• 한국재료학회지
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• 제8권11호
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• pp.977-981
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• 1998

Si 기판의 온도를 200에서 $500^{\circ}C$까지 변화시켜가면서 고집저 소자의 금속배선으로 응용되고 있는 저저항의 텅스텐 박막을 플라즈마 화학증착 방법에 의해 제작하였다. 이렇게 증착된 텅스텐 박막의 비저항은 $H_2/WF_6 $ 가스의 분압비에 따라 매우 민감하게 작용하는 것을 알 수있다. 플라즈마 밀도가 $0.7W/\textrm{cm}^2$ 이하에서는 박막내에 존재하는 잔류응력이 $2.4\times10^9dyne/\textrm{cm}^2$ 이하이다. 그러나 1.8에서 $2.7W/\textrm{cm}^2$로 증가함에 따라 잔류응력은 $8.1\times10^9$에서 $1.24\times10^{10}dyne/\textrm{cm}^2$로 갑자기 증가하는데 이는 박막을 증착할 때에 플라즈마 밀도가 증가하면 이온이나 radical bombardment 의 영향 때문이다.

• 반도체디스플레이기술학회지
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• 제21권2호
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• pp.101-106
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• 2022

In this paper, WBG semiconductor such as SiC and GaN were applied as power switches for LCL circuit that can be applied to satellite power systems and the test results of the LCL circuit are reported. P-channel MOSFET and N-channel MOSFET, which were generally used in the conventional LCL circuit, were applied together to expand the utility of the test results. The design and stability evaluation were performed using a Micro Cap circuit simulation program. For the test circuit, a module using each switch was manufactured, and a total of 5 modules were manufactured and the steady state and transient state characteristics were compared. From the experimental results, the LCL circuit for power supply of the satellite power system constructed in this paper satisfied the constant current and constant voltage conditions under various operating conditions. The P-channel MOSFET showed the lowest efficiency characteristics, and the three N-channel switches of Si, SiC and GaN showed relatively high efficiency characteristics of up to 99.05% or more. In conclusion, it was verified that the on-resistor of the switch had a direct effect on the efficiency and loss characteristics.

• 전자공학회논문지A
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• 제32A권6호
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• pp.41-50
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• 1995

A state-of-the-arts GaAs power metal semiconductor field effect transistor (MESFET) for 3.3V operation digital hand-held phone at 900 MHz has been developed for the first time, The FET was fabricated using a low-high doped structures grown by molecular beam epitaxy (MBE). The fabricated MESFETs with a gate width of 16 mm and a gate length of 0.8 .mu.m shows a saturated drain current (Idss) of 4.2A and a transconductance (Gm) of around 1700mS at a gate bias of -2.1V, corresponding to 10% Idss. The gate-to-drain breakdown voltage is measured to be 28 V. The rf characteristics of the MESFET tested at a drain bias of 3.3 V and a frequencyof 900 MHz are the output power of 32.3 dBm, the power added efficiency of 68%, and the third-ordr intercept point of 49.5 dBm. The power MESFET developed in this work is expected to be useful as a power amplifying device for digital hand-held phone because the high linear gain can deliver a high power added efficiency in the linear operation region of output power and the high third-order intercept point can reduce the third-order inter modulation.

• ETRI Journal
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• 제28권2호
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• pp.253-256
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• 2006

We propose a novel power metal oxide semiconductor field effect transistor (MOSFET) employing a strained-Si channel structure to improve the current drivability and on-resistance characteristic of the high-voltage MOSFET. A 20 nm thick strained-Si low field channel NMOSFET with a $0.75\;{\mu}m$ thick $Si_{0.8}Ge_{0.2}$ buffer layer improved the drive current by 20% with a 25% reduction in on-resistance compared with a conventional Si channel high-voltage NMOSFET, while suppressing the breakdown voltage and subthreshold slope characteristic degradation by 6% and 8%, respectively. Also, the strained-Si high-voltage NMOSFET improved the transconductance by 28% and 52% at the linear and saturation regimes.

• 전기전자학회논문지
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• 제24권4호
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• pp.1093-1097
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• 2020

본 논문에서는 위성 통신 시스템 응용을 위하여 Ku-대역에서 동작하는 3 W PHEMT MMIC 전력 증폭기의 특성을 기술한다. 3 W PHEMT MMIC 전력 증폭기는 WIN(wireless information networking) semiconductor Corp.에서 제공하는 게이트 길이가 0.25 ㎛인 GaAs 기반 PHEMT (pseudomorphic high electron mobility transistor) 공정을 사용하여 개발되었다. 개발된 Ku-대역 PHEMT MMIC 전력 증폭기는 13.75 GHz에서부터 14.5 GHz까지의 동작주파수 범위에서 22.2~23.1 dB의 소신호 이득과 34.8~35.4 dBm의 포화 출력 전력을 가진다. 최대 포화 출력 전력은 13.75 GHz에서 35.4 dBm (3.47 W)이었다. 전력 부가 효율은 30.8~37.83%의 특성을 얻었으며 칩의 크기는 4.4 mm×1.9 mm이다. 개발된 PHEMT MMIC 전력 증폭기는 다양한 Ku-대역 위성 통신 시스템 응용에 적용 가능할 것으로 예상된다.

• 공업화학
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• 제30권1호
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• pp.108-113
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• 2019

본 연구에서는 반도체 제조 공정에서 발생되는 과불화화합물을 고온 플라즈마를 활용하여 분해하고자 하였고, 분해 특성을 조사하였다. 실험에 사용된 PFCs 가스는 200 L/min의 유량에 농도 5,000 ppm으로 주입하였다. 인입 전력에 따른 분해 효율 분석 결과 $CF_4$ 및 $SF_6$ 모두 12.8 kW의 전력에서 최고 효율을 나타내었고 그 이상의 전력에서는 큰 차이를 나타내지 않았다. PFCs의 재결합 방지를 위한 반응수 주입 실험 결과 약 14 mL/min의 유량에서 최고 효율을 나타내었으며 14 mL/min을 기준으로 유량이 증가하거나 감소함에 따라 모두 처리효율이 감소하였다. 연구 결과 고온 플라즈마를 활용한 PFCs의 분해 특성을 파악할 수 있었고 또한 반도체 제조 공정에서 발생하는 PFCs 및 온실가스에 처리에 대한 기초를 마련하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권3호
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• pp.300-311
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• 2016

The analog-to-digital-converter-based (ADC-based) backplane receivers that consist of a front-end ADC followed by a digital equalizer are gaining more popularity in recent years, as they support more sophisticated equalization required for high data rates, scale better with fabrication technology, and are more immune to PVT variations. Unfortunately, designing an ADC-based receiver that meets tight power and performance budgets of high-speed backplane link systems is non-trivial as both front-end ADC and digital equalizer can be power consuming and complex when running at high speed. This paper reviews the state of art designs for the front-end ADC and digital equalizers to suggest implementation choices that can achieve high speed while maintaining low power consumption and complexity. Design-space exploration using system-level models of the ADC-based receiver allows through analysis on the impact of design parameters, providing useful information in optimizing the power and performance of the receiver at the early stage of design. The system-level simulation results with newer device parameters reveal that, although the power consumption of the ADC-based receiver may not comparable to the receivers with analog equalizers yet, they will become more attractive as the fabrication technology continues to scale as power consumption of digital equalizer scales well with process.

• 전력전자학회:학술대회논문집
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• 전력전자학회 1999년도 전력전자학술대회 논문집
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• pp.122-125
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• 1999

The AC-to-DC single-phase PWM rectifier for traction applications using high power semiconductor, IGCT is made and tested. Parallel operation of two PWM converter is adopted for increasing capacity of converters. For reducing harmonics, the harmonic content is eliminated by the phase shift between two converters switching phase. The output voltage control is achieved by interns calculation without detecting the input current. The part of PLL used for controlling power factor is simply implemented by software.

• 한국인터넷방송통신학회논문지
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• 제22권4호
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• pp.127-132
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• 2022

철도차량에 탑재된 전장품 중 가장 큰 하중을 차지하는 것은 주변압기로 낮은 운전 주파수(60Hz)로 인해 전력밀도가 0.2~0.4 MVA/ton 정도로 낮아 경량화에 중요한 요소로 작용하고 있다. 따라서 철도차량용 주변압기를 개선하기 위해 몰드 변압기, 반도체 변압기 등에 관한 연구가 국내외적으로 활발히 진행 중이다. 한편 국내외 철도차량에 대부분 적용되는 견인전동기로 최근에는 유도전동기를 대체하여 영구자석 동기전동기(PMSM)를 적용하려는 시도가 이루어지고 있다. 영구자석 동기전동기(PMSM)는 유도전동기에 비해 높은 출력밀도와 효율 확보가 가능하지만 제작에 필요한 재료의 가격이 비싸고 설계가 유도전동기 대비 다소 어렵다는 단점이 있다. 이러한 문제점을 고려하여 본 논문에서는 소형 경량화가 가능한 반도체 변압기를 적용하고, 철도차량의 경량화, 고효율화 등의 요구사항에 맞춰 구조가 간단하면서 회전수가 높고 고토크, 저비용인 SRM을 적용할 수 있는 연구내용을 제안하고자 한다.

• 반도체디스플레이기술학회지
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• 제21권3호
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• pp.101-104
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• 2022

Mist-CVD is known to have advantages of low cost and high productivity compared to ALD and PECVD methods. It is capable of reacting to the substrate by misting an aqueous solution using ultrasonic waves under vacuum-free conditions of atmospheric pressure. In particular, Ga₂O₃ is regarded as advanced power semiconductor material because of its high quality of transmittance, and excellent electrical conductivity through N-type doping. In this study, Computational Fluid Dynamics were used to predict the uniformity of the thin film on a large-area substrate. And also the deposition pattern and uniformity were analyzed using the flow velocity and particle tracking method. The uniformity was confirmed by quantifying the deposition cross section with an FIB-SEM, and the consistency of the uniformity prediction was secured through the analysis of the CFD distribution. With the analysis and experimental results, the match rate of deposition area was 80.14% and the match rate of deposition thickness was 55.32%. As the experimental and analysis results were consistent, it was confirmed that it is possible to predict the deposition thickness uniformity of Mist-CVD.