• Transactions on Electrical and Electronic Materials
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• 제7권3호
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• pp.99-102
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• 2006

The electrical characteristics of CMOS inverter with LDMOSFET are studied for high power and digital circuit application by using two dimensional MEDICI simulator. The simulation is done in terms of voltage transfer characteristic and on-off switching properties of CMOS inverter with variation of channel length and channel doping levels. The channel which surrounds a junction-type source in LDMOSFET is considered to be an important parameter to decide a circuit operation of CMOS inverter. The digital logic levels of input voltage show to increase with increase of n-channel length and doping levels while the logic output levels show to the almost constant.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
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• pp.9-11
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• 2000

To increase the device linearities and the breakdown-voltages of FETs, Al$\sub$0.25/ Ga$\sub$0.75/AS / In$\sub$0.25/Ga$\sub$0.75/As / Partially doped channel FET(DCFET) structures are proposed. The metal- insulator -semiconductor (MIS) like structures show the high gate-drain breakdown voltage(-20 V) and high linearities. The devices showed the small ripple of the current cut-off frequency and the power cut-off frequency over the wide bias range.

• 반도체디스플레이기술학회지
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• 제21권1호
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• pp.148-154
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• 2022

As the 4th industrial age approaches, the demand for semiconductors is increasing enough to be used in all electronic devices. At the same time, semiconductor technology is also developing day by day, leading to ultraprecision and low power consumption. Semiconductors that keep getting smaller generate heat because the energy density increases, and the generated heat changes the shape of the semiconductor package, so it is important to manage. The temperature change is not only self-heating of the semiconductor package, but also heat generated by external damage. If the package is deformed, it is necessary to manage it because functional problems and performance degradation such as damage occur. The package burn in test in the post-process of semiconductor production is a process that tests the durability and function of the package in a high-temperature environment, and heat dissipation performance can be evaluated. In this paper, we intend to review a new material formulation that can improve the performance of the adapter, which is one of the parts of the test socket used in the burn-in test. It was confirmed what characteristics the basic base showed when polyamide, a high-molecular material, and alumina, which had high thermal conductivity, were mixed for each magnification. In this study, functional evaluation was also carried out by injecting an adapter, a part of the test socket, at the same time as the specimen was manufactured. Verification of stiffness such as tensile strength and flexural strength by mixing ratio, performance evaluation such as thermal conductivity, and manufacturing of a dummy device also confirmed warpage. As a result, it was confirmed that the thermal stability was excellent. Through this study, it is thought that it can be used as basic data for the development of materials for burn-in sockets in the future.

• JSTS:Journal of Semiconductor Technology and Science
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• 제11권3호
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• pp.207-220
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• 2011

Coarse-grained reconfigurable architecture (CGRA) based embedded systems aims to achieve high system performance with sufficient flexibility to map a variety of applications. However, the CGRA has been considered as prohibitive one due to its significant area/power overhead and performance bottleneck. In this work, I propose reconfigurable multi-array architecture to reduce power/area and enhance performance in configurable embedded systems. The CGRA-based embedded systems that consist of hierarchical configurable computing arrays with varying size and communication speed were examined for multimedia and other applications. Experimental results show that the proposed approach reduces on-chip area by 22%, execution time by up to 72% and reduces power consumption by up to 55% when compared with the conventional CGRA-based architectures.

• 전력전자학회:학술대회논문집
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• 전력전자학회 1998년도 연구회 합동 학술발표회 논문집
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• pp.60-63
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• 1998

The widely used power supply (Switched Mode Power Supply : SMPS) as a source in order to stabilize direct current for electronics or communication systems has merits, when it is compared to the existing source for stability, such as high efficiency, small size, light weight by means of switching process of the semiconductor device which controls the flow of power. However, due to existence of inductors and capacitors used for charging energy, the source part in electronic or communication systems hasn't reached the speed, that is supposed to get, for achieving smaller size and lighter weight. In order to get smallness in size, it is necessary to increase switching frequency. And that makes devices for measuring energy smaller. Nevertheless, the rise switching frequency brings increases in switching loss, inductor loss, and power loss. Also, the occurrence of surge and noise caused by high frequency switching is getting higher. The resonant converter has been considered as one of methods that give solutions for the problems of SMPS and that method have been paid attention as a source technology in electronics and communication.

• 한국전기전자재료학회논문지
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• 제25권9호
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• pp.755-758
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• 2012

We developed a new solar simulator to evaluate a large-scale solar cell using seven kinds of LEDs (Infrared, Red, Yellow, Green, Blue, White and Ultra Violet LED). LED solar simulator can be displaced the existing solar simulator which has several demerits such as high power consumption and short lifetime. We have tried to fabricate LED solar simulator which fulfills the spectrum for AM 1.5G condition, and to verify the feasibility of LED solar simulator.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2002년도 전력전자학술대회 논문집
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• pp.330-333
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• 2002

The design of high power electronic circuits and the verification of the design by practical experiments are time and cost consuming. Recently power circuit simulation technique is developing to do it easily. However, most of the simulation has used the ideal switch model consists of passive component that can not describe the physical characteristics of semiconductor devices and cannot describe the switching transient state. For the design of such power electronic circuits by the simulation, the switching transients are very important. Therefore the simulation models must describe the switching transient and the stationary behavior as precisely as possible on the hand and as fast as possible the other hand. This paper introduces the application of the physical models of power devices that are developed by TUM(Technical University of Munich, Germany) for the power electronic circuit analysis.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.271-271
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• 2012

Many studies have been investigated on high density plasma source (Electron Cyclotron Resonance, Inductively Coupled Plasma, Helicon plasma) for large area source after It is announced that productivity of plasma process depends on plasma density. In this presentation, we will propose the new concept of the multiple source, which consists of a parallel connection of ICP sources and helicon plasma sources. For plasma uniformity, equivalent power (especially, equivalent current in ICP & Helicon) should distribute on each source. We design power feeding line as coaxial transmission line with same length of ground line in each source for equivalent power distribution. And we confirm the equivalent power distribution with simulation and experimental result. Based on basic study, we develop the plasma source for oxidation in semiconductor process. we will discuss the relationship between the processing parameters (With or WithOut magnet, operating pressure, input power ). In ICP, plasma density uniformity is uniform. In ICP with magnet (or Helicon) plasma density is not uniform. As a result, new design (magnet arrangement and gas distributor and etc..) are needed for uniform plasma density in ICP with magnet and Helicon.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2001년도 Proceedings ICPE 01 2001 International Conference on Power Electronics
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• pp.301-303
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• 2001

In this paper we present a Capacitor Charging Power Supply (CCPS) using a series-resonant three-level inverter topology to improve voltage regulation and use semiconductor switches having low blocking voltage capability such as MOSFETs. This inverter can be operated with two modes, Full Power Mode (FPM) and Half Power Mode (HPM). In FPM inverter supplies the high frequency step up transformer with full DC-link voltage and in HPM with half DC-link voltage. HPM switching method will be adopted when CCPS output voltage reaches the preset target value and operates in refresh mode-charge is maintained on the capacitor. In this topology each semiconductor devices blocks a half of the DC-link voltage[2]. A 15kW, 30kV CCPS has been built and will be tested for an electric precipitator application. The CCPS operates from an input voltage of 500VDC and has a variable output voltage between 10 to 30kV and 1kHz repetition rate at 44nF capacitive load [3]. A resonant frequency of 67.9kHz was selected and a voltage regulation of $0.83\%$ has been achieved through the use of half power mode without using the forced cut off the switch current [1]. The theory of operation, circuit topology and test results are given.

• 한국시뮬레이션학회논문지
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• 제4권2호
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• pp.41-60
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• 1995

The IGBT(Insulated Gate Bipolar Transistor) is a power semiconductor device that has gained acceptance among circuit design engineers for motor drive and power converter applications. IGBT devices(International Rectifier, Proposed proposed model etc) have the best features of both power MOSFETs and power bipolar transistors, i.e., efficient voltage gate drive requirememts and high current density capability. When designing circuit and systems that utilize IGBTs or other power semiconductor devices, circuit simulations are needed to examine how the devices affect the behavior of the circuit. The interaction of the IGBT with the load circuit can be described using the device model and the state equation of the load circuit. The voltage rise rate at turn-off for inductive loads varies significantly for IGBTs with different base life times, and this rate of rise is important in determing the voltage overshoot for a given series resistor-inductor load circuit. Excessive voltage overshoot is potentially destructive, so a snubber protection circuit may be required. The protection circuit requirements are unique for the IGBT and can be examined using the model. The IGBT model in this paper is verified by comparing the results of the model with experimented results for various circuit operating conditions. The model performs well and describes experimented results accurately for the range of static and dynamic condition in which the device is intended to be operated.