• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.4
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• pp.400-406
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• 2024

Next-generation wide-bandgap semiconductors such as SiC, GaN, and Ga2O3 are being considered as potential replacements for current silicon-based power devices due to their high mobility, larger size, and production of high-quality wafers at a moderate cost. In this study, we investigate the gradual modulation of chemical composition in multi-stacked metal oxide semiconductor thin films to enhance the performance and bias stability of thin-film transistors (TFTs). It demonstrates that adjusting the Ga ratio in the indium gallium oxide (IGO) semiconductor allows for precise control over the threshold voltage and enhances device stability. Moreover, employing multiple deposition techniques addresses the inherent limitations of solution-processed amorphous oxide semiconductor TFTs by mitigating porosity induced by solvent evaporation. It is anticipated that solution-processed indium gallium oxide (IGO) semiconductors, with a Ga ratio exceeding 50%, can be utilized in the production of oxide semiconductors with wide band gaps. These materials hold promise for power electronic applications necessitating high voltage and current capabilities.

• Korean Journal of Optics and Photonics
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• v.8 no.1
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• pp.47-51
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• 1997

A Cr:LiSAF laser pumped by semiconductor lasers was constructed. The pumping laser was a high-power semiconductor laser (SDL 7432-H1) of wavelength 674 nm and maximum power of 500 mW. The laser crystal was a Cr:LiSAF of plano-Brewster shape with 3% Cr3+ion concentration and 3 mm in length. The plane facet of the crystal was coated to get the maximum transmittance of pupmping laser and maximu reflection over the 800 - 880 nm bandwidth. V-shaped resonator was used to compensate the astigmatism induced by the crystal. The output power of the Cr:LiSAF laser was 19.4 mW at the pumping power of 290 mW. The wavelength was tuned by a steep dive-angled birefringent filter from 840 nm to 880 nm and the characteristics of the filter were agreed well with a theory.

• The Transactions of the Korean Institute of Power Electronics
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• v.23 no.5
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• pp.299-304
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• 2018

An ideal circuit breaker should supply electric power to loads without losses in a conduction state and completely isolate the load from the power source by providing insulation strength in a break state. Fault current is relatively easy to break in an Alternating Current (AC) circuit breaker because the AC current becomes zero at every half cycle. However, fault current in DC circuit breaker (DCCB) should be reduced by generating a high arc voltage at the breaker contact point. Large fire may occur if the DCCB does not take sufficient arc voltage and allows the continuous flow of the arc fault current with high temperature. A semiconductor circuit breaker with a power electronic device has many advantages. These advantages include quick breaking time, lack of arc generation, and lower noise than mechanical circuit breakers. However, a large load capacity cannot be applied because of large conduction loss. An extinguishing technology of DCCB with polymeric positive temperature coefficient (PPTC) device is proposed and evaluated through experiments in this study to take advantage of low conduction loss of mechanical circuit breaker and arcless breaking characteristic of semiconductor devices.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 1999.11a
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• pp.184-188
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• 1999

The power semiconductor switching devices(PSSD) continuously developed, Power Electronic Technology using PSSD is gradually extended. The high frequency inverter to generate the large power high frequency subject to power electronic technology pursuit various applications. Also, in emboss with environmental destruction problem cause the atmosphere and the water pollution to growth of the commercial society, the research in favor of cleaning environmental a pollutant actively proceed. Therefore, This paper describe study on the high frequency pulse power supply. The theoretical results are in good agreement with the experimental ones. The proposed pulse power supply is considerated to be useful for discharge lamp.

• Journal of Power Electronics
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• v.12 no.1
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• pp.19-23
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• 2012

This paper presents a practical methodology for realistic simulation on reverse characteristics of Wide Bandgap (WBG) SiC and GaN p-n junctions. The adjustment on certain physic-based model parameters, such as the trap density and photo-generation for SiC junction, and impact ionization coefficients and critical field for GaN junction are described. The adjusted parameters were used in Synopsys Medici simulation to obtain a realistic p-n junction avalanche breakdown voltage. The simulation results were verified through benchmarking against independent data reported by others.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.05a
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• pp.192-200
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• 2005

A high speed address recovery technique for AC plasma display panel(PDP) is proposed. By removing the GND switching operation, the recovery speed can be increased and switching loss due to GND switch also becomes to be reduced. The proposed method is able to perform load-adaptive operation by controlling the voltage level of energy recovery capacitor, which prevents increasing inefficient power consumption caused by circuit loss during recovery operation. Thus, th e technique shows the minimum address power consumption according to various displayed images, different from prior methods operating in fixed mode regardless of images. Test results with 50' HD single- scan PDP(resolution : $1366{\times}768$) show that less than 350ns of recovery time is successfully accomplished and about $54\%$ of the maximum power consumption can be reduced, tracing minimum power consumption curves.

• Journal of the Semiconductor & Display Technology
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• v.14 no.4
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• pp.84-87
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• 2015

We have designed and fabricated two different RF-DC Converters called doubler for 5.8GHz Microwave Wireless Power Transmission. The doubler as RF-DC Converter makes the rectified voltage be doubled. We measured and compared voltages of the doublers with those of the previous full-wave rectifying RF-DC Converter. The doublers show rectified double voltages. However, the full-wave rectifying converter has a high efficiency due to the suppression of reflecting harmonics. The other fabricated doublers causes so many harmonics that they can't convert the low-power RF to the full DC. In this paper, we show that the different doublers doesn't double the rectifying voltages compared with those of the full-wave rectifying converter and give a reason about that.

• Proceedings of the KIPE Conference
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• 2014.07a
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• pp.89-90
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• 2014

Recently, one of the switching rectifiers, Power Factor Correction Circuit is often applied in rectification stage to get high efficient conversion of AC-DC SMPS However, it becomes important to select optimal semiconductor switch as well as to design optimal rectifier for achieving higher power conversion. We performed experiments with MOSFET, SiC and GaN FET that are widely used in 600 W Interleaved CRM PFC and include the data in this report. The results are presented for discrete semiconductor and integrated implementations of interleaved CRM PFC.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.3
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• pp.185-196
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• 2002

MRAM(magnetic random access memory) is a promising candidate for a universal memory with non-volatile, fast operation speed and low power consumption. The simplest architecture of MRAM cell is a combination of MTJ(magnetic tunnel junction) as a data storage part and MOS transistor as a data selection part. This article will review the general development status of MRAM and discuss the issues. The key issues of MRAM technology as a future memory candidate are resistance control and low current operation for small enough device size. Switching issues are controllable with a choice of appropriate shape and fine patterning process. The control of fabrication is rather important to realize an actual memory device for MRAM technology.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.3
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• pp.190-193
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• 2013

Power MOSFET and Power IGBT is develop in power savings, high efficiency, small size, high reliability, fast switching, low noise. Power MOSFET can be used high-speed switching transistors devices. Power MOSFET is devices the voltage-driven approach switching devices are design to handle on large power, power supplies, converters. In this paper, design the 80V MOSFET Planar Gate type, and design the Trench Gate type for realization of low on-resistance. For both structures, by comparing and analyzing the results of the simulation and characterization.