• Title/Summary/Keyword: High Frequency Enhancement

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A Study on the high frequency properties of Mn-Zn ferrite with Nd2O3 addition (Nd2O3 첨가에 따른 Mn-Zn ferrite의 고주파 특성에 관한 연구)

  • Choi, U-Sung
    • Korean Journal of Materials Research
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    • v.13 no.4
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    • pp.228-232
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    • 2003
  • The effects of$ Nd_2$$O_3$addition on the properties of Mn-Zn ferrite were investigated in the doping concentration range from 0.05 to 0.25 wt%. All samples were prepared by standard fabrication of ferrite ceramics. With increasing the Neodymium oxides, specific density and initial permeability increased on the whole. But, the tendencies such as upper result had the measured value on limitation and characteristics saturated or decreased properties after that. With increasing the content of Neodymium oxides. both the real and imaginary component of complex permeability and the magnetic loss(tan$\delta$) increased. Because reason that magnetic loss increases is high ratio that a real department increases than imaginary department. Magnetic loss increased none the less for increasing the real department related with magnetic permeability. But, the magnetic loss of ferrite doped with the Neodymium oxides were lower than that of none doped Mn-Zn ferrite. The small amount of percent Neodymium oxides in Mn-Zn ferrite composition led to enhancement of resistivity in bulk, and more so in the grain boundary.

Design of High Gain Differential Amplifier Using GaAs MESFET's (갈륨비소 MESFET를 이용한 고이득 차동 증폭기 설계)

  • 최병하;김학선;김은로;이형재
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.17 no.8
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    • pp.867-880
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    • 1992
  • In this paper, a circuit design techniques for Improving the voltage gain of the GaAs MESFET single amplifier is presented. Also, various types of existing current mirror and proposed current mirror of new configuration are compared. To obtain the high differential mode gain and low common mode gain, bootstrap gain enhancement technique Is used and common mode feedback Is employed In the design of differential amplifier. The simulation results show that designed differential amplifier has differential gain of 57.66dB, unity gain frequency of 23.25GHz. Also, differential amplifier using common mode feedback with alternative negative current mirror has CMRR of 83.S8dB, stew rate of 3500 V /\ulcorners.

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Design of a High Gain Microstrip Antenna with Rectangular Cavity Backed (구형 캐비티 부착형 고이득 마이크로스트립 안테나 설계)

  • 임정섭;이문수
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.5 no.4
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    • pp.822-828
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    • 2001
  • In this paper, a high gain microstrip antenna with rectangular cavity backed is designed. A single microstrip patch is basically a low gain radiator As a ga in enhancement method, superstrate loading techniques are applied to the $2\times2$ microstrip array antenna with cavity backed. In antenna design, although the broadside gain increases as the cavity is enlarged, a cavity size of $3\times3$ wavelength is sufficient. The distance between the radiating elements is chosen as 1.5 free-space wavelength. The antenna radiation characteristics are calculated by IE3D software and compared with the experimental results. Experimental results show that the maximum gain is 18.6dBi at the frequency of 9.16GHz, which is good agreement with the calculations.

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The Effects of Rotational Correlation Time of Paramagnetic Contrast Agents on Relaxation Enhancement: Partial Binding to Macromolecules (거대분자에 부분적으로 결합한 상자성 자기공명 조영제의 회전속도가 이완증강에 미치는 영향)

  • 장용민
    • Investigative Magnetic Resonance Imaging
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    • v.3 no.2
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    • pp.159-166
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    • 1999
  • Purpose : To evaluate the effect of rotational correlation time (${\tau}_R$) and the possible related changes of other parameters, ${\tau}_M,{\;}{\tau}_S,{\;}and{\;}(\tau}_V$ of gadolinium (Gd) chelate on T1 relaxation enhancement in two pool model. Materials and Methods : The NMRD (Nuclear Magnetic Relaxation Dispersion) profiles were simulated from 0.02 MHz to 800 MHz proton Larmor frequency for different values of rotational correlation times based on Solomon-Bloembergen equation for inner-sphere relaxation enhancement. To include both unbound pool (pool A) and bound pool (pool B), the relaxivity was divided by contribution from unbound pool and bound pool. The rotational correlation time for pool A was fixed at the value of 0.1 ns, which is a typical value for low molecular weight complexes such as Gd-DTPA in solution and ${\tau}_R$ for pool B was changed from 0.1 ns to 20 ns to allow the slower rotation by binding to macromolecule. The fractional factor of was also adjusted from 0 to 1.0 to simulate different binding ratios to macromolecule. Since the binding of Gd-chelate to macromolecule cab alter the electronic environment of Gd ion and also the degree of bulk water access to hydration site of Gd-chelate, the effects of these parameters were also included. Results : The result shows that low field profiles, ranged from 0.02 to 40 MHz, and dominated by contribution from bound pool, which is bound to macromolecule regardless of binding ratios. In addition, as more Gd-chelate bound to macromolecule, sharp increase of relaxivity at higher field occurs. The NMRD profiles for different values of ${\tau}_S$ show the enormous increase of low field profile whereas relaxivity at high field is not affected by ${\tau}_S$. On the other hand, the change in ${\tau}$V does not affect low field profile but strongly in fluences on both inflection fie이 and the maximum relaxivity value. The results shows a fluences on both inflection field and the maximum relaxivity value. The results shows a parabolic dependence of relaxivity on ${\tau}_M$. Conclusion : Binding of Gd-chelate to a macromolecule causes slower rotational tumbling of Gd-chelate and would result in relaxation enhancement, especially in clinical imaging field. However, binding to macromolecule can change water enchange rate (${\tau}_M$) and electronic relaxation ($T_le$) vis structural deformation of electron environment and the access of bulk water to hydration site of metal-chelate. The clinical utilities of Gd-chelate bound to macromolecule are the less dose requirement, the tissue specificity, and the better perfusion and intravascular agents.

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Frontiers in Magneto-optics of Magnetophotonic Crystals

  • Inoue, M.;Fedyanin, A.A.;Baryshev, A.V.;Khanikaev, A.B.;Uchida, H.;Granovsky, A.B.
    • Journal of Magnetics
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    • v.11 no.4
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    • pp.195-207
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    • 2006
  • The recently published and new results on design and fabrication of magnetophotonic crystals of different dimensionality are surveyed. Coupling of polarized light to 3D photonic crystals based on synthetic opals was studied in the case of low dielectric contrast. Transmissivity of opals was demonstrated to strongly depend on the propagation direction of light and its polarization. It was shown that in a vicinity of the frequency of a single Bragg resonance in a 3D photonic crystal the incident linearly polarized light excites inside the crystal the TE- and TM-eigen modes which passing through the crystal is influenced by Brags diffraction of electromagnetic field from different (hkl) sets of crystallographic planes. We also measured the faraday effect of opals immersed in a magneto-optically active liquid. It was shown that the behavior of the faraday rotation spectrum of the system of the opal sample and magneto-optically active liquid directly interrelates with transmittance anisotropy of the opal sample. The photonic band structure, transmittance and Faraday rotation of the light in three-dimensional magnetophotonic crystals of simple cubic and face centered cubic lattices formed from magneto-optically active spheres where studied by the layer Korringa-Kohn-Rostoker method. We found that a photonic band structure is most significantly altered by the magneto-optical activity of spheres for the high-symmetry directions where the degeneracies between TE and TM polarized modes for the corresponding non-magnetic photonic crystals exist. The significant enhancement of the Faraday rotation appears for these directions in the proximity of the band edges, because of the slowing down of the light. New approaches for one-dimensional magnetophotonic crystals fabrication optimized for the magneto-optical Faraday effect enhancement are proposed and realized. One-dimensional magnetophotonic crystals utilizing the second and the third photonic band gaps optimized for the Faraday effect enhancement have been successfully fabricated. Additionally, magnetophotonic crystals consist of a stack of ferrimagnetic Bi-substituted yttrium-iron garnet layers alternated with dielectric silicon oxide layers of the same optical thickness. High refractive index difference provides the strong spatial localization of the electromagnetic field with the wavelength corresponding to the long-wavelength edge of the photonic band gap.

Measurement and Analysis of Conduction Noise through Microstrip Line Attached with Composite Sheets of Iron Particles and Rubber Matrix (마이크로스트립 전송선로를 이용한 순철 압분체-고무 복합재의 전도노이즈 흡수특성 측정 및 해석)

  • Kim, Sun-Tae;Oh, Byung-Ki;Kim, Sung-Soo;Cho, Han-Sin;Lee, Jae-Hee
    • Journal of the Korean Magnetics Society
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    • v.14 no.5
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    • pp.174-179
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    • 2004
  • Attenuation of conduction noise through microstrip line attached with the high lossy iron flakes-rubber composites has been investigated in GHz frequencies. Microstrip line was designed with characteristic impedance of 50 $\Omega$ and a length corresponding to the center frequency of 3 GHz. Iron flakes were fabricated by mechanical forging of spherical iron powders using an attrition mill. The fabricated microstrip line shows a ideal propagation characteristics of S$\sub$11/ < -60 dB and S$\sub$21/ = 0 dB. Attaching a noise absorbing sheet on the microstrip line, S$\sub$11/ increases to about -10 dB and S$\sub$21/ decreases to -20~-60 dB depending on the length of absorbing sheet. The calculated power loss is as high as 80% in the frequency range 2~8 GHz. It is suggested that the most critical material parameter is magnetic loss for the enhancement of noise attenuation.

Linearity Enhancement of Partially Doped Channel GaAs-based Double Heterostructure Power FETs (부분 채널도핑된 GaAs계 이중이종접합 전력FET의 선형성 증가)

  • Kim, U-Seok;Kim, Sang-Seop;Jeong, Yun-Ha
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.39 no.1
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    • pp.83-88
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    • 2002
  • To increase the device linearities and the breakdown-voltages of FETs, $Al_{0.25}$G $a_{0.75}$As/I $n_{0.25}$G $a_{0.75}$As/A $l_{0.25}$G $a_{0.75}$As partially doped channel FET(DCFET) structures are proposed. The metal insulator-semiconductor(MIS) like structures show the high gate-drain breakdown voltage(-20V) and high linearities. We propose a partially doped channel structure to enhance the device linearity to the homogeneously doped channel structure. The physics of partially doped channel structure is investigated with 2D device simulation. The devices showed the small ripple of the current cut-off frequency and the power cut-off frequency over the wide bias range. bias range.

Observations of Infection Structures on the Leaves of Cucumber Plants Pre-treated with Arbuscular Mycorrhiza Glomus intraradices after Challenge Inoculation with Colletotrichum orbiculare

  • Lee, Chung-Sun;Lee, Yun-Jeong;Jeun, Yong-Chull
    • The Plant Pathology Journal
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    • v.21 no.3
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    • pp.237-243
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    • 2005
  • Resistance inductions on the leaves of cucumber plant by an arbuscular mycorrhiza Glomus intraradices were investigated. In addition, the infection structures were observed at the penetration sites on the leaves of plant inoculated with Colletotrichum orbiculare using a fluorescence microscope. The severity of anthracnose disease caused by Colletotrichum orbiculare was significantly decreased on the leaves of cucumber plant colonized with G intraradices compared with those of non-treated control plants. As a positive control, pre-treatment with DL-3-aminobutyric acid (BABA) caused a remarkable reduction of the disease severity on the pathogen-inoculated leaves. There were no significant differences in the frequency of either germination or appressorium formation of the plant pathogen between mycorrhiza colonized and non-treated plants. It was also the same on the BABA pre-treated plants. However, the frequency of callose formation was significantly high on the leaves of G intraradices colonized plants compared to those of non-treated control plants at 5 days after challenge inoculation. On the leaves of BABA treated plants callose formation was not significantly high than those of non-treated, although the disease severity was more strongly suppressed. It was suggested that the resistance induced by colonization with G. intraradices might be related to the enhancement of callose formation at the penetrate sites on the leaves invaded by the pathogen, whereas resistance by BABA did not.

Performance A Analysis of OFDM/QPSK-DMR System Using BL-PSF over Microwave Channel Environments (Microwave 채널환경에서 BL-PSF를 적용하는 OFDM/QPSK-DMR 시스템의 성능분석)

  • Ahn, Jun-bae;Yang, Hee-jin;Oh, Chang-heon;Cho, Sung-joon
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.29 no.9C
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    • pp.1279-1288
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    • 2004
  • In this paper, the DMR(Digital Microwave Radio) system-based OFDM(Orthogonal Frequency Division Multiplexing) scheme in microwave channel environments has been proposed and system performances have been evaluated. The existing single carrier DMR system has a complex system structure due to using high-level QAM(Quadrature Amplitude Modulation) modulation scheme and so charmel capacity is limited by sensitive effects from fading. Therefore, in the proposed DMR system, it uses that the OFDM scheme for enhancement of fading distortion and also uses that the band-limited pulse shaping filter instead of windowing for no additional data such as GI/GB and for using efficient of IFFT/FFT block. The performance of OFDM/QPSK-DMR system and single carrier DMR system are analysed by computer simulation using two-ray model under the microwave channel environments The computer simulation results confirm that the fade margin of the proposed OFDM/QPSK-DMR system is highly increased as the number of sub-carriers is larger.

Research on the Multi-electrode Plasma Discharge for the Large Area PECVD Processing

  • Lee, Yun-Seong;You, Dae-Ho;Seol, You-Bin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.478-478
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    • 2012
  • Recently, there are many researches in order to increase the deposition rate (D/R) and improve film uniformity and quality in the deposition of microcrystalline silicon thin film. These two factors are the most important issues in the fabrication of the thin film solar cell, and for the purpose of that, several process conditions, including the large area electrode (more than 1.1 X 1.3 (m2)), higher pressure (1 ~ 10 (Torr)), and very high frequency regime (VHF, 40 ~ 100 (MHz)), have been needed. But, in the case of large-area capacitively coupled discharges (CCP) driven at frequencies higher than the usual RF (13.56 (MHz)) frequency, the standing wave and skin effects should be the critical problems for obtaining the good plasma uniformity, and the ion damage on the thin film layer due to the high voltage between the substrate and the bulk plasma might cause the defects which degrade the film quality. In this study, we will propose the new concept of the large-area multi-electrode (a new multi-electrode concept for the large-area plasma source), which consists of a series of electrodes and grounds arranged by turns. The experimental results with this new electrode showed the processing performances of high D/R (1 ~ 2 (nm/sec)), controllable crystallinity (~70% and controllable), and good uniformity (less than 10%) at the conditions of the relatively high frequency of 40 MHz in the large-area electrode of 280 X 540 mm2. And, we also observed the SEM images of the deposited thin film at the conditions of peeling, normal microcrystalline, and powder formation, and discussed the mechanisms of the crystal formation and voids generation in the film in order to try the enhancement of the film quality compared to the cases of normal VHF capacitive discharges. Also, we will discuss the relation between the processing parameters (including gap length between electrode and substrate, operating pressure) and the processing results (D/R and crystallinity) with the process condition map for ${\mu}c$-Si:H formation at a fixed input power and gas flow rate. Finally, we will discuss the potential of the multi-electrode of the 3.5G-class large-area plasma processing (650 X 550 (mm2) to the possibility of the expansion of the new electrode concept to 8G class large-area plasma processing and the additional issues in order to improve the process efficiency.

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