• Progress in Medical Physics
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• v.11 no.2
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• pp.147-155
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• 2000

Patient dose verification is one of the most important parts in quality assurance of the treatment delivery for radiation therapy. The dose distributions may be meaningfully improved by modulating two dimensional intensity profile of the individual high energy radiation beams In this study, a new method is presented for the pre-treatment dosimetric verification of these two dimensional distributions of beam intensity by means of a charge coupled device video camera-based fluoroscopic device (henceforth called as CCD-VCFD) as a radiation detecter with a custom-made software for dose calculation from fluorescence signals. This system of dosimeter (CCD-VCFD) could reproduce three dimensional (3D) relative dose distribution from the digitized fluoroscopic signals for small (1.0$\times$1.0 cm$^2$ square, ø 1.0 cm circular ) and large (30$\times$30cm$^2$) field sizes used in intensity modulated radiation therapy (IMRT). For the small beam sizes of photon and electron, the calculations are performed In absolute beam fluence profiles which are usually used for calculation of the patient dose distribution. The good linearity with respect to the absorbed dose, independence of dose rate, and three dimensional profiles of small beams using the CCD-VCFD were demonstrated by relative measurements in high energy Photon (15 MV) and electron (9 MeV) beams. These measurements of beam profiles with CCD-VCFD show good agreement with those with other dosimeters such as utramicro-cylindrical (UC) ionization chamber and radiographic film. The study of the radiation dosimetric technique using CCD-VCFD may provide a fast and accurate pre-treatment verification tool for the small beam used in stereotactic radiosurgery (SRS) and can be used for verification of dose distribution from dynamic multi-leaf collimation system (DMLC).

• The Korean Journal of Ceramics
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• v.6 no.2
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• pp.129-133
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• 2000

Boron nitride films were synthesized with $N_2$ion flux of low energy, up to 100 eV, at different substrate temperatures of no heating, 200, 400, 500, and $800^{\circ}C$, respectively. Boron was supplied by e-beam evaporation at the rate of $1.5\AA$/sec. For all the conditions, hexagonal BN (h-BN) phase was mainly synthesized and high resolution transmission electron microscopy (HRTEM) showed that (002) planes of h-BN phase were aligned vertical to the Si substrate. The maximum alignment occurred around $400^{\circ}C$. In addition to major h-BN phase, transmission electron diffraction (TED) rings identified the formation of cubic BN (c-BN) phase. But HRTEM showed no distinct and continuous c-BN layer. These results suggest that c-BN phase may form in a scattered form even when h-BN phase is mainly synthesized under small momentum transfer by bombarding ions, which are not reconciled with the macro compressive stress model for the c-BN formation.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2007.05a
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• pp.241-245
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• 2007

The residual stress in axial stress in the axial direction of the steel filaments has been measured by using a method based on the combination of the focused ion beam (FIB) and high resolution strain mapping program (VIC-2D). That is, the residual stress was calculated from the measured displacement field before and after the introduction of a slot along the steel filaments. The displacement was obtained by the digital correlation analysis of high-resolution scanning electron micrographs, while the slot was introduced by FIB milling with low energy beam. The present measurement revealed that the residual stress within 8% of the magnitude was persistent in the steel filaments fabricated.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.253-253
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• 2012

Low temperature SiOx film process has being required for both silicon and oxide (IGZO) based low temperature thin film transistor (TFT) for application of flexible display. In recent decades, from low density and high pressure such as capacitively coupled plasma (CCP) type plasma enhanced chemical vapor deposition (PECVD) to the high density plasma and low pressure such as inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) have been used to researching to obtain high quality silicon oxide (SiOx) thin film at low temperature. However, these plasma deposition devices have limitation of controllability of process condition because process parameters of plasma deposition such as RF power, working pressure and gas ratio influence each other on plasma conditions which non-leanly influence depositing thin film. In compared to these plasma deposition devices, neutral beam assisted chemical vapor deposition (NBaCVD) has advantage of independence of control parameters. The energy of neutral beam (NB) can be controlled independently of other process conditions. In this manner, we obtained NB dependent high crystallized intrinsic and doped silicon thin film at low temperature in our another papers. We examine the properties of the low temperature processed silicon oxide thin films which are fabricated by the NBaCVD. NBaCVD deposition system consists of the internal inductively coupled plasma (ICP) antenna and the reflector. Internal ICP antenna generates high density plasma and reflector generates NB by auger recombination of ions at the surface of metal reflector. During deposition of silicon oxide thin film by using the NBaCVD process with a tungsten reflector, the energetic Neutral Beam (NB) that controlled by the reflector bias believed to help surface reaction. Electrical and structural properties of the silicon oxide are changed by the reflector bias, effectively. We measured the breakdown field and structure property of the Si oxide thin film by analysis of I-V, C-V and FTIR measurement.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.53-53
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• 2003

최근 높은 유전상수와 잔류 분극, 비선형 등의 다양한 유전적인 특성으로 인해 산화물 박막이 많은 관심을 가지고 연구되어지고 있다. 많은 산화물 박막중에서도 BaTiO3/SiTiO3 (BTO/STO) 인 공격자는 STO나 BTO 또는 (Ba$_{0.5}$ Sr$_{0.5}$)TiO$_3$ (BST)등의 고용체들과 비교했을 때 아주 뛰어난 유전적인 성질을 나타내고 있다. 특히 1000 $\AA$ 이하의 낮은 두께에서도 높은 유전상수와 비선형도를 가진다는 사실이 선행된 실험에서 밝혀졌는데 BTO와 STO를 각각 2 unit cell (8 $\AA$)로 고정 시킨 후 다층 박막으로 제작했을 때 가장 큰 유전 특성을 얻을 수 있었다. 이런 뛰어난 유전적인 성질은 BTO와 STO 각 층의 두께와 주기 변화에 따른 박막 내부의 인위적인 stress와 그에 따른 격자 변형과 아주 밀접한 관계가 있음으로 생각되어진다. 따라서 이런 두 계면에서의 stress와 격자 변형을 더욱 정착하게 분석하기 위해서는 각 층을 원자 단위로 정확하게 두께 제어를 하고 증착되어지는 과정중에서의 growth mode를 확인하는 것이 무엇보다 중요한 일이다.

• Journal of Powder Materials
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• v.17 no.1
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• pp.36-43
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• 2010

In present work, amorphous TiCuNi powders were fabricated by mechanical alloying process. Amorphization and crystallization behaviors of the TiCuNi powders during high-energy ball milling and subsequent microstructure changes were studied by X-ray diffraction and transmission electron microscope. TEM samples were prepared by the focused ion beam technique. The morphology of powders prepared with different milling times was observed by field-emission scanning electron microscope and optical microscope. The powders developed a fine, layered, homogeneous structure with milling times. The crystallization behavior showed that glass transition, $T_g$, onset crystallization, $T_x$, and super cooled liquid range ${\Delta}T=T_x-T_g$ were 628, 755 and 127K, respectively. The as-prepared amorphous TiCuNi powders were consolidated by spark plasma sintering process. Full densified TiCuNi samples were successfully produced by the spark plasma sintering process. Crystallization of the MA powders happened during sintering at 733K.

• Proceedings of the Korean Society of Medical Physics Conference
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• 2004.11a
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• pp.166-169
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• 2004

In the International Code of Practice for dosimetry TRS-398 published by International Atomic Energy Agency(IAEA), water equivalency plastic phantom may be used under certain circumstances for electron beam dosimetry for beam quality E0${\leq}$ 10 MeV. In this study, Palstic Water$^{TM}$ and Virtual Water$^{TM}$ were evaluated in order to determine fluence scaling factor hpl. Plastic phantom was evaluated for five electron energy from 6 MeV to 20 MeV. From the measured data of Palstic Water$^{TM}$, the fluence scaling factor hpl was found to be average 0.9964 and Virtual Water$^{TM}$ fluence scaling factor was 1.0156.

• Polymer(Korea)
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• v.33 no.6
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• pp.575-580
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• 2009

Carbon fabric-reinforced silicon carbide composites (C/SiC) have attracted a considerable attention for high temperature structural application because of their outstanding oxidation resistance property and thermal shock resistance. In this study, we reported on the preparation of C/SiC composites by the polymer impregnation and pyrolysis (PIP) method. For this, polycarbosilane solution was impregnated into the carbon fabric and then cured by electron beam irradiation under argon atmosphere. Afterwards, the cured composite was pyrolyzed at $1300^{\circ}C$ for 1 h under argon atmosphere to produce the C/SiC composite. The porosity and density of the C/SiC composite were 13.5% and $2.44\;g/cm^3$, respectively, when the impregnation of the carbon fabric with the 30 wt% polycarbosilane solution conducted four times. In addition, in the isothermal experiment at $1500\;^{\circ}C$ in air for 5 h, the 95.9 wt% of the C/SiC composite was remained, indicating that the prepared C/SiC composite has a outstanding oxidation resistance.

• Composites Research
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• v.15 no.2
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• pp.40-47
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• 2002

The di-functional epoxy resins, i.e., diglycidylether of bisphenol A(DGEBA) and diglycidylethere of bisphenol F(DGEBF) were initiated by cationic catalyst, i.e., benzylquinoxalinium hexafluoroantimonate(BQH) using electron-beam(EB) technique. And the effect of structure of DGEBA and DGEBF on thermal stabilities and cure behaviors was investigated. According to the experimental results, the decomposed activation energy based on Horowitz-Metzger method was higher in the case of DGEBA, but intergral procedural decomposition temperature(IPDT) of DGEBA was lower than DGEBF. This could be interpreted in terms of high crosslink density resulted from hydroxyl bond of DGEBF backbone. It was confirmed in increasing the hydroxyl band at $7000\;cm^{-1}$ and $5235\;cm^{-1}$ using near-infrared spectroscopy(NIRS).

• Proceedings of the KIPE Conference
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• 2004.07a
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• pp.64-67
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• 2004

The klystron-modulator(K&M) system of the Pohang Light Source(PLS) had been supplying high power microwaves for the acceleration of 2.5 GeV electron beams since October 2002. There are 12 sets of K&M systems to accelerate electron beams to 2.5GeV nominal beam energy. One module of the K&M system consists of an 80 MV S-band (2856 MHZ) klystron tube and the matching 200 MW modulator. In order to obtain electron beam of the consequently stability for linac, the pulse-to-pulse beam voltage regulation is less than $+/-0.5\%$. To get the reliable stability of the modulator which is less than $+/-0.5\%$, a charging section is improved in a modulator which has been operated with inverter power supply.