• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.4
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• pp.261-266
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• 1998

In developing the high density memory device, the etching of fine pattern is becoming increasingly important. Therefore, definition of ultra fine line and space pattern and minimization of damage and contamination are essential process. Also, the high density plasma in low operating pressure is necessary. The candidates of high density plasma sources are electron cyclotron resonance plasma, helicon wave plasma, helical resonator, and inductively coupled plasma. In this study, planar type magnetized inductively coupled plasma etcher has been built. The density and temperature of Ar plasma are measured as a function of rf power, flow rate, external magnetic field, and pressure. The oxide etch rate and selectivity to polysilicon are measured as the above mentioned conditions and self-bias voltage.

• Electrical & Electronic Materials
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• v.15 no.9
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• pp.10-14
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• 2002

Plasma processing plays a significant role in semiconductor devices technology. Development of new plasma systems, such as high-density plasma reactors, required development of plasma theory to understand a whole process mechanism and to be able to explain and to predict processing results. A most important task in this way is to establish interconnections between input process parameters (working gas, pressure flow rate input power density) and a various plasma subsystems (electron gas, volume and heterogeneous gas chemistry, transport), which are closely connected one with other. It will allow select optimal ways for processes optimizations.

• Current Applied Physics
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• v.18 no.11
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• pp.1436-1440
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• 2018

SiN and SiCN film production using plasma-enhanced atomic layer deposition (PE-ALD) is investigated in this study. A developed high-power and high-density multiple inductively coupled plasma (multi-ICP) source is used for a low temperature PE-ALD process. High plasma density and good uniformity are obtained by high power $N_2$ plasma discharge. Silicon nitride films are deposited on a 300-mm wafer using the PE-ALD method at low temperature. To analyze the quality of the SiN and SiCN films, the wet etch rate, refractive index, and growth rate of the thin films are measured. Experiments are performed by changing the applied power and the process temperature ($300-500^{\circ}C$).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.2
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• pp.95-100
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• 1998

A helical inductively coupled plasma asher, which produces low energy and high density plasma, has been built and investigated for photoresist stripping process. Oxygen ion density in the order of $10^{11}/cm^3$ is measured by Langmuir probe, and higher oxygen radical density is observed by Optical Emission Spectrometer. As RF source power is increased, the plasma density and thus photoresist stripping rate are increased. Independent RF bias power to the wafer stage provides a dc bias to the wafer and an ability to add the ion assisted reaction. At 1 KW of the source power, the coupling mechanism of the RF power to the plasma is changed from the inductive mode to the capacitive one at about 1 Torr. This change causes the plasma density and ashing rate decreases abruptly. The critical pressure of the mode change becomes larger with larger RF power.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.185.1-185.1
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• 2016

Cutoff probe, diagnostics instrument for plasma density, have been received an extensive attention due to simple, robust and lowest assumption. Although the cutoff probe has a long history, physical model is limited in low density plasma. For that reason, we propose a novel transmission line model of cutoff probe for precise measurement of high density plasma. In addition simplified circuit model can be obtained from transmission line model. It can explain simply physics of cutoff probe in high density plasma.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.143.1-143.1
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• 2015

An inductively coupled plasma source driven by 13.56MHz was prepared for the deposition of a-C:H thin film. Properties of the plasma source are investigated by fluid simulation including Navier-Stokes equations and home-made tuned single Langmuir probe. Signal attenuation ratios of the Langmuir probe at first and second harmonic frequency were 13.56Mhz and 27.12Mhz respectively. Dependencies of plasma parameters on process parameters were agreed with simulation results. Ar/CH4 plasma simulation results shown that hydrocarbon radical densities have their lowest value at the vicinity of gas feeding line due to high flow velocity. For input power density of 0.07W/cm3, CH radical density qualitatively follows electron density distribution. On the other hand, central region of the chamber become deficient in CH3 radical due to high dissociation rate accompanied with high electron density. The result suggest that optimization of discharge power is important for controlling deposition film quality in high density plasma sources.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.58 no.4
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• pp.465-468
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• 2009

The dispersion relation and the characteristic of propagation are measured. The measurements of the dispersion relation are observed by a plunger method employed in slow plasma density by pumping microwaves on the axis are observed in plasma loaded slow wave structure. In case of small incident microwave powers the well known plasma density cavity are observed. At the axial positions of minimal radius in the waveguides, the maxima og the electron density, the plasma potential and the RF electric field are observed in cases of high-power microwaves.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.2092-2094
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• 2000

As a next generation lithography (NGL) technology for VLSI semiconductor fabrication, electron beam, ion beam, X-ray and extreme ultraviolet(EUV) are considered as possible candidates. Among these methods, EUV lithography(EUVL) is thought to be the most probable because it is easily realized by improving current optical lithography technology. In order to set EUV radiation which can be applied to EUVL, it is essential to generate very high density and high temperature plasma stably. The method using a pulse power laser and a high voltage pulse discharge is commonly used to accomplish such a high density and high temperature plasma. In this paper we review the recent trends of the EUV generation technique by high density and high temperature plasma.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.210.2-210.2
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• 2016

An inductively coupled plasma source was prepared for the deposition of a-C:H thin film. Properties of the inductively coupled plasma source are investigated by fluid simulation including Navier-Stokes equations and home-made tuned single Langmuir probe. Signal attenuation ratios of the Langmuir probe harmonic frequency were 13.56Mhz and 27.12Mhz. Dependencies of plasma parameters on process parameters were accord with simulation results. Ar/CH4 plasma simulation results shown that hydrocarbon radical densities have their lowest value at the vicinity of gas feeding line due to high flow velocity. For input power density of 0.07W/cm3, CH radical density qualitatively follows electron density distribution. On the other hand, central region of the chamber become deficient in CH3 radical due to high dissociation rate accompanied with high electron density. The result suggest that optimization of discharge power is important for controlling deposition film quality in high density plasma sources.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.202-202
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• 2011

Diagnostics of plasma density is a key factor for monitoring plasma processing. Various probes are invented to measure plasma density and cut-off probe is a one of the most promising diagnostics tool for measuring plasma density. However, at the low density or high pressure the cut-off probe cannot clearly resolve the cut-off peak. Several reasons make this problem: Cut-off likes peaks caused by cavity resonances and weaken transmission spectrum signal at high pressure. Recently, You et al., have researched mechanism of cut-off probe and we improve the cut-off reliability and sensitivity base on that research. Modified cut-off antenna is adapted and bias cut-off probe method is tried. These experiment results have good agreement with the previous study and show good measurement characteristics.