• Transactions on Electrical and Electronic Materials
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• v.3 no.3
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• pp.8-13
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• 2002

Controlled precipitation of quasi-binary semiconductor system is newly proposed as an effective and reliable technique for the formation of well-defined and crystallographically aligned semiconductor nanostructures. Using HgTe-PbTe quasi-binary semiconductor system, self-aligned HgTe nanocrystallites distributed three dimensionally within PbTe matrix were successfully formed by the simple three step heat treatment process routinely found in age hardening process of metallic alloys. Examination of the resulting nano precipitates using conventional transmission electron microscopy (CTEM) and high resolution TEM (HRTEM) reveals that the coherent HgTe precipitates form as thin discs along the (100) habit planes making a crystallographic relation of {100}$\_$HgTe///{100}$\_$PbTe/ and [100]$\_$HgTe///[100]$\_$PbTe/. It is also found that the precipitate undergoes a gradual thickening and a faceting under isothermal aging up to 500 hours without any noticeable coarsening. These results, combined with the extreme dimension of the precipitates (4-5 nm in length and sub-nanometer in thickness) and the simplicity of the formation process, leads to the conclusion that controlled precipitation is an effective method for preparing desirable quantum-dot nanostructures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.84-87
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• 2003

HgTe quantum dots(QDs) were synthesized in aqueous solution by colloidal method. The absorption and photoluminescence(PL) spectrum of the synthesized HgTe QDs revealed the strong exitonic peak in the IR region. And the photocurrent measurement of colloidal QDs are performed using IR light source. The lineshape of the wavelength dependent intensity of photocurrent was very similar to the absorption spectrum, indicating the charges generated by the absorption of photons give direct contribution to photocurrent. The channels of dark current are supposed $H_2O$ containing in thiol by the remarkable drop of current at the state of vacuum. It was thought that the proper passivation layer on the top of HgTe film reduce the dark current and the adequate choice of capping material improves the efficiency of the photocurrent in the HgTe QDs. This study suggests that HgTe QDs are very prospective materials for optoelectronics including photodetectors in the IR range.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.451-451
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• 2011

적외선 소자의 재료로 쓰이는 액상 에피 성장법(Liquid phase epitaxy: LPE)으로 성장된 HgCdTe (MCT)박막의 Hg 분위기 열처리에 따른 구조적 변화를 고 분해능 투과 전자 현미경으로 관찰하였다. 일반적으로 LPE방법으로 성장된 MCT박막은 성장 방법의 특성상 Te 과다 영역의 성장용액이 사용되므로 상온 냉각 과정에서 박막 내 국부적인 Te 석출물을 형성 시킬 가능성이 높다. 또한, 성장 과정시 높은 Hg 증기압으로 인해 Hg-vacancy가 존재하므로 품질을 저하시키는 요인이 된다. 따라서, 본 실험에서는 Hg-vacancy와 국부적인 Te 석출물의 제거를 위해 Hg 분위기 열처리 공정을 실시하여 박막의 결정성 변화 및 국부적인 조성 변화를 관찰하였다. 실험결과, 열처리에 따른 Hg의 박막 내 공급으로 인한 이차상의 형성 등이 관찰 되었으며 부피 팽창으로 인해 격자의 변형이 관찰 되었다. 이는 투과 전자 현미경의 고 분해능 이미지 와 Gaussian mask filtering 기법으로 보여진 격자 줄무늬상 (lattice fringe)으로 확인 하였다. 또한, 열처리에 따른 국부적인 조성 편기의 해소는 high angle annular dark field scanning TEM(HAADF-STEM)을 이용하여 관찰 하였다.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.2
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• pp.89-95
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• 1995

The structure of boron ion-implanted pn junctio in the vacancy-doped p-type HgCdTe was investigated with the differential Hall measurement. The as-implanted junction showed the electron concentration as high as 1${\times}10^{18}/cm^{3}$ and the junction depth of 0.6.mu.m. When the HgCdTe junction was heated in oven, the electron concentration near the junction decreased and the junction depth increased as the annealing temperature and time increased. The junction structure after the thermal annealing was n$^{+}$/n$^{-}$/p. For the 200.deg. C 20min annealed sample, the electron mobility was 10$^{4}cm^{2}/V{\cdot}$s near the surface(n$^{+}$), and was larger thatn 10$^{5}cm^{2}/V{\cdot}$s near the junction(n$^{+}$). The junction formation mechanism is conjectured as follows. When HgCdTe is ion-implanted, the ion energy generates crystal defecis and displaced Hg atoms HgCdTe is ion-implanted, the ion energy generates crystal defecis and displaced Hg atoms near the surface. The displaced Hg vacancies diffuse in easily by the thernal treatment and a fill the Hg vacancies in the p-HgCdTe substrate. With the Hg vacancies filled completely, the GfCdTe substrate becomes n-type because of the residual n-type impurity which was added during the wafer growing. Therefore, the n$^{+}$/n$^{-}$/p regions are formed by crystal defects, residual impurities, and Hg vacancies, respectively.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.6 no.4
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• pp.50-56
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• 2007

This study aims to find the optimal cutting conditions, when are IR Detection device HgCdTe is machined with diamond tool of diamond turning machine. Machining technique for HgCdTe with single point diamond turning tool is reported in this paper. The main factors influencing the machined surface quality are discovered and regularities of machining process are drawn. It has been found HgCdTe has more and more important applications in the field of modern optics. The purpose of our research is to find the optimum machining conditions for ductile cutting of HgCdTe and apply the SPDT technique to the manufacturing of ultra precision optical components of brittle materials.

• Journal of the Korea Institute of Military Science and Technology
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• v.1 no.1
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• pp.227-237
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• 1998

HgCdTe Is the most versatile material for the developing infrared devices. Not like III-V compound semiconductors or silicon-based photo-detecting materials, HgCdTe has unique characteristics such as adjustable bandgap, very high electron mobility, and large difference between electron and hole mobilities. Many research groups have been interested in this material since early 70's, but mainly due to its thermodynamic difficulties for preparing materials, no single growth technique is appreciated as a standard growth technique in this research field. Solid state recrystallization(SSR), travelling heater method(THM), and Bridgman growth are major techniques used to grow bulk HgCdTe material. Materials with high quality and purity can be grown using these bulk growth techniques, however, due to the large separation between solidus and liquidus line on the phase diagram, it is very difficult to grow large materials with minimun defects. Various epitaxial growth techniques were adopted to get large area HgCdTe and among them liquid phase epitaxy(LPE), metal organic chemical vapor deposition(MOCVD), and molecular beam epitaxy(MBE) are most frequently used techniques. There are also various types of photo-detectors utilizing HgCdTe materials, and photovoltaic and photoconductive devices are most interested types of detectors up to these days. For the larger may detectors, photovoltaic devices have some advantages over power-requiring photoconductive devices. In this paper we reported the main results on the HgCdTe growing and characterization including LPE and MOCVD, device fabrication and its characteristics such as single element and linear array($8{\times}1$ PC, $128{\times}1$ PV and 4120{\times}1$ PC). Also we included the results of the dewar manufacturing, assembling, and optical and environmental test of the detectors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.31-34
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• 2002

HgTe quantum dots were synthesized in aqueous solution at room temperature by colloidal method. The synthesized materials were identified to be zincblende cubic structured HgTe quantum dots by X-ray diffraction and transmission electron microscopy image revealed that these quantum dots are agglomerate of a individual particle. The colloidally prepared HgTe quantum dots have the sphere-like shape with a diameter of approximately 4 nm. The optical properties of the HgTe quantum dots were investigated with photoluminescence(PL). The PL appears in the near-infrared region, which represent a dramatic shift from bulk HgTe behavior. The analytic results revealed that HgTe quantum dots have the broad size distribution, as PL emission spectrum covers the spectral region from 900 to 1400 nm. In this study, the factors affecting PL of HgTe quantum dots and particle size distributiont are described.會Ā᐀䁇?⨀젲岒Ā㰀會Ā㰀顇?⨀끩Ā㈀會Ā㈀?⨀䡪ఀĀ᐀會Ā᐀䡈?⨀Ā᐀會Ā᐀ꁈ?⨀硫ᜀĀ저會Ā저?⨀샟ගऀĀ저會Ā저偉?⨀栰岒ఀĀ저會Ā저ꡉ?⨀1岒Ā저會Ā저J?⨀惝ග؀Ā؀會Ā؀塊?⨀ග嘀Ā切會Ā切끊?⨀⣟ගĀ搀會Ā搀ࡋ?⨀큭킢Ā저會Ā저恋?⨀桮킢Ā저會Ā저롋?⨀⣅沥ࠀĀࠀ會Āࠀ၌?⨀샅沥Ā저會Ā저桌?⨀壆沥ሀĀ저會Ā저쁌?⨀o킢瀀ꀏ會Āᡍ?⨀棤좗ĀĀĀ會ĀĀ灍?⨀å좗ĀĀĀ會ĀĀ졍?⨀飥좗ĀĀĀ會ĀĀ⁎?⨀?ꆟᤀ

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.121-121
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• 2008

We propose a novel nanomaterial-based pn diode which constructed with an n-type ZnO nanowire (NW) and a p-type HgTe nanoparticle (NP) thin film. The photo current characteristics of a ZnO NW, a HgTe NP thin film and pn diode constructed with a ZnO NW and a HgTe NP thin film were investigated under illumination of the 325 nm and 633 nm wavelength light. The conductivities of a ZnO NW exposed to the 325 nm and 633 nm wavelength light increased, while the photocurrents taken from the HgTe NP thin film was very close to the dark currents. Moreover, The pn diode exhibited the rectifying characteristics of the dark current and of the photocurrent excited by the 633 nm wavelength light. In contrast, the ohmic characteristics for the photocurrent were observed due to the junction barrier lowering in the conduction band of the ZnO nanowire under the illumination of the 325 nm wavelength light.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.9
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• pp.121-127
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• 1995

We have analyzed the double insulating layer consisting of anodic oxide and ZnS through TEM experiments. The use of double insulating layer for HgCdTe surface passivation is one of the promising passivation method which has been recently studied deeply and the double insulating layer is formed by the evaporation of ZnS on the top of anodic oxide layer grown in H$_{2}$O$_{2}$ electrolyte. The structure of anodic oxide layer on HgCdTe is amorphous but the structure of oxide layer after the evaporation of ZnS has been changed to micro-crystalline. The interface layer of 150.angs. thickness has been found between ZnS and anodic oxide layer and is estimated to be ZnO layer. The results of analysis on the chemical components of ZnS, the interface layer and anodic oxide layer have showed that Zn has diffused into the anodic oxide layer deeply while Hg has been significantly decreased from HgCdTe bulk to the top of oxide layer. The formation of ZnO interface layer and the change of structure of anodic oxide layer after the evaporation of ZnS are estimated to be defects or to induce the defects which might possibly affect the increase of the positive fixed charges shown in C-V measurements of HgCdTe MIS.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1341-1342
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• 2006

Electrical characteristics of field-effect thin film transistors (TFTs) with p-channels of CdTe/CdHgTe core-shell nanocrystals are investigated in this paper. For the fabrication of bottom- and top-gate TFTs, CdTe/CrHgTe nanocrystals synthesized by colloidal method are first dispersed on oxidized p+ Si substrates by spin-coating, the dispersed nanoparticles are sintered at $150^{\circ}C$ to form the channels for the TFTs, and $Al_{2}O_{3}$ layers are deposited on the channels. A representative bottom-gate field-effect TFT with a bottom-gate $SiO_2$ layer exhibits a mobility of $0.21cm^2$/ Vs and an Ion/Ioff ratio of $1.5{\times}10^2$ and a representative top-gate field-effect TFT with a top-gate $Al_{2}O_{3}$ layer provides a field-effect mobility of $0.026cm^2$/ Vs and an Ion/Ioff ratio of $2.5{\times}10^2$. $Al_{2}O_{3}$ was deposited for passivation of CdTe/CdHgTe core-shell nanocrystal layer, resulting in enhanced hole mobility, Ior/Ioff ratio by 0.25, $3{\times}10^3$, respectively. The CdTe/CdHgTe nanocrystal-based TFTs with bottom- and top gate geometries are compared in this paper.