• The Journal of the Petrological Society of Korea
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• v.7 no.2
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• pp.111-131
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• 1998

The migmatitic gneiss in the Odesan Gneiss Complex has small amount of quartzite, amphibolite and marble and the Kuryong Group which contact with migmatitic gneiss unconformitly, also contains some amphibolite. Preview studies of this area had regarded that the amphibolites contact with marble had been produced by metasomatism from the pelitic and calcareous sediments mixtures, but the amphibolite is reinterpreted as igneous origin. $SiO_2$ content of the amphibolite is 45.9~52.7 wt%, which corresponds to basaltic composition. MgO content has narrow range (4.6~6.87 wt%) and major and trace element are plotted against MgO,$TiO_2, P_2O_5$, Hf, Zr are reduced and Cr and Ni are increased their content with increasing MgO. This phenomenon indicates that the basaltic magma as the protolith of the amphibolite had frationated with the crystallization of the pyroxene and/or olivine. REE pattern has smoothly decrease from LREE to HREE. Eu/Eu(0.83~1.19) show the flat Eu anomaly, which indicate small fractional crystallization of plagioclase. HREE is enriched in the garnet-bearing amphibolites. Several discrimination diagram for the basaltic magma show that the amphibolite of the study area is originated tholeiitic basaltic magma indicating continental rift environment. Due to determine the metamorphic condition garnet-hornblende geothermometry and hornblende-plagioclase geobarometry are used. Peak metamorphic temperature range of the amphibolite $788~870^{\circ}C$ and is deduced toward the northeastern part. The calculated temperature from the amphibolite has slightly higher than the temperature of the metapelites but the trend of metamorphic grade which decrease from western to eastern part progradly is similar to each other. The metamorphic pressure calculated by garnet- hornblede-plagioclase geobarometry is 4~5kb. But ilmenite-plagioclase pair enclosed in garnet show 8 kb at $700^{\circ}C$ by garnet-ilmenite-rutile-plagioclase geobarometery. The zonal profile of garnet in sample 84 shows the bell-shape profile, which grossular content decreases whereas pyrope content increases progressively. This means that the amphibolite has undergone the clockwise P-T-t path which is shown in the migmatitic gneiss of the Odesan Gneiss Complex.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.30.1-30.1
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• 2009

정보화가 급속히 진전됨에 따라 보다 많은 양의 정보를 전송, 처리, 저장하게 되면서 이를 위해 대용량, 고속, 비휘발성의 특징을 갖는 차세대 메모리의 개발이 절실히 요구되고있다. 이 중 저항 변화 메모리(ReRAM)는 일반적으로 TiO2, Al2O3, NiO2, HfO2, ZrO2 등의 전이금속산화물을 이용한 MIM 구조로서 적당한 전기 신호를 가하면 저항이 높아서 전도되지 않는 상태(Offstate)에서 저항이 낮아져 전도가 가능한 상태(On state)로 바뀌는 메모리 특성을가진다. ReRAM은 비휘발성 메모리이며 종래의 비휘발성 기억소자인 Flash memory 보다 access time 이105 배 이상 빠르고, 5V 이하의 낮은 전압에서도 동작이 가능하다. 또한 구조가 간단하여 공정 단순화가 가능하고 소자의 집적화도 쉽다는 점 등 많은 장점들이 있어서 Flash memory를 대체할 수 있는 유력한 후보로 여겨지고 있다. 본연구에서는 DC-magnetron Sputtering 방법으로 전이금속 박막을 증착하고, Dry furnace로 산화시켜 전이금속산화물 박막을 제작한 후 저항변화 특성을 연구하였다. 두 개의 전이금속산화물 박막을 dual-layer로 형성시켜 저항변화특성을 관찰하였으며 또한, 전이금속산화물 박막의 조성을 달리 하여 저항변화를 관찰 하였다. 전이금속산화물 박막의 전기적 특성을 알아보기 위해 Si(100) wafer 위에 Pt를 이용 MIM 형태로 capacitor 시편을 제작 하여, probe station으로 I-V 측정을 하였고 조성 및 표면 분석을 위해서는 AES와 AFM을, 미세구조를 분석을 위해서는 TEM과 SEM 을 사용하였다.

• Nuclear Engineering and Technology
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• v.49 no.8
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• pp.1711-1716
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• 2017

Uranium tetrafluoride ($UF_4$) is the most used nuclear material for producing metallic uranium by reduction with Ca or Mg. Metallic uranium is a raw material for the manufacture of uranium silicide, $U_3Si_2$, which is the most suitable uranium compound for use as nuclear fuel for research reactors. By contrast, ammonium uranyl carbonate is a traditional uranium compound used for manufacturing uranium dioxide $UO_2$ fuel for nuclear power reactors or $U_3O_8-Al$ dispersion fuel for nuclear research reactors. This work describes a procedure for recovering uranium and ammonium fluoride ($NH_4F$) from a liquid residue generated during the production routine of ammonium uranyl carbonate, ending with $UF_4$ as a final product. The residue, consisting of a solution containing high concentrations of ammonium ($NH_4^+$), fluoride ($F^-$), and carbonate ($CO_3^{2-}$), has significant concentrations of uranium as $UO_2^{2+}$. From this residue, the proposed procedure consists of precipitating ammonium peroxide fluorouranate (APOFU) and $NH_4F$, while recovering the major part of uranium. Further, the remaining solution is concentrated by heating, and ammonium bifluoride ($NH_4HF_2$) is precipitated. As a final step, $NH_4HF_2$ is added to $UO_2$, inducing fluoridation and decomposition, resulting in $UF_4$ with adequate properties for metallic uranium manufacture.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.257-257
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• 2016

최근에 메모리의 초고속화, 고집적화 및 초절전화가 요구되면서 resistive random access memory (ReRAM), ferroelectric RAM (FeRAM), phase change RAM (PRAM)등과 같은 차세대 메모리 기술이 활발히 연구되고 있다. 다양한 메모리 중에서 특히 resistive random access memory (ReRAM)는 빠른 동작 속도, 낮은 동작 전압, 대용량화와 비휘발성 등의 장점을 가진다. ReRAM 소자는 절연막의 저항 스위칭(resistance switching) 현상을 이용하여 동작하기 때문에 SiOx, AlOx, TaOx, ZrOx, NiOx, TiOx, 그리고 HfOx 등과 같은 금속 산화물에 대한 연구들이 활발하게 이루어지고 있다. 이와 같이 다양한 산화물 중에서 AlOx는 ReRAM의 절연막으로 적용되었을 때, 우수한 저항변화특성과 안정성을 가진다. 하지만, AlOx 박막을 형성하기 위하여 기존에 많이 사용되어지던 PVD (physical vapour deposition) 또는 CVD (chemical vapour deposition) 방법에서는 두께가 균일하고 막질이 우수한 박막을 얻을 수 있지만 고가의 진공장비 사용 및 대면적 공정이 곤란하다는 문제점이 있다. 한편, 용액 공정 방법은 공정과정이 간단하여 경제적이고 대면적화가 가능하며 저온에서 공정이 이루어지는 장점으로 많은 관심을 받고 있다. 본 연구에서는 sputtering 방법과 용액 공정 방법으로 형성한 AlOx 기반의 ReRAM에서 메모리 특성을 비교 및 평가하였다. 먼저, p-type Si 기판 위에 습식산화를 통하여 SiO2 300 nm를 성장시킨 후, electron beam evaporation으로 하부 전극을 형성하기 위하여 Ti와 Pt를 각각 10 nm와 100 nm의 두께로 증착하였다. 이후, 제작된 AlOx 용액을 spin coating 방법으로 1000 rpm 10 초, 6000 rpm 30 초의 조건으로 증착하였다. Solvent 및 불순물 제거를 위하여 $180^{\circ}C$의 온도에서 10 분 동안 열처리를 진행하였고, 상부 전극을 형성하기 위해 shadow mask를 이용하여 각각 50 nm, 100 nm 두께의 Ti와 Al을 electron beam evaporation 방법으로 증착하였다. 측정 결과, 용액 공정 방법으로 형성한 AlOx 기반의 ReRAM에서는 기존의 sputtering 방법으로 제작된 ReRAM에 비해서 저항 분포가 균일하지는 않았지만, 103 cycle 이상의 우수한 endurance 특성을 나타냈다. 또한, 1 V 내외로 동작 전압이 낮았으며 104 초 동안의 retention 측정에서도 메모리 특성이 일정하게 유지되었다. 결론적으로, 간단한 용액 공정 방법은 ReRAM 소자 제작에 많이 이용될 것으로 기대된다.

• Korean Journal of Materials Research
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• v.23 no.7
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• pp.379-384
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• 2013

In order to produce size-controllable Ag nanoparticles and a nanomesh-patterned Si substrate, we introduce a rapid thermal annealing(RTA) method and a metal assisted chemical etching(MCE) process. Ag nanoparticles were self-organized from a thin Ag film on a Si substrate through the RTA process. The mean diameter of the nanoparticles was modulated by changing the thickness of the Ag film. Furthermore, we controlled the surface energy of the Si substrate by changing the Ar or $H_2$ ambient gas during the RTA process, and the modified surface energy was evaluated through water contact angle test. A smaller mean diameter of Ag nanoparticles was obtained under $H_2$ gas at RTA, compared to that under Ar, from the same thickness of Ag thin film. This result was observed by SEM and summarized by statistical analysis. The mechanism of this result was determined by the surface energy change caused by the chemical reaction between the Si substrate and $H_2$. The change of the surface energy affected on uniformity in the MCE process using Ag nanoparticles as catalyst. The nanoparticles formed under ambient Ar, having high surface energy, randomly moved in the lateral direction on the substrate even though the etching solution consisting of 10 % HF and 0.12 % $H_2O_2$ was cooled down to $-20^{\circ}C$ to minimize thermal energy, which could act as the driving force of movement. On the other hand, the nanoparticles thermally treated under ambient $H_2$ had low surface energy as the surface of the Si substrate reacted with $H_2$. That's why the Ag nanoparticles could keep their pattern and vertically etch the Si substrate during MCE.

• Korean Journal of Mineralogy and Petrology
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• v.35 no.2
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• pp.125-140
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• 2022

The Xiquegou Pb-Zn deposit is located at the Qingchengzi orefield which is one of the largest Pb-Zn mineralized zone in the northeast of China. The geology of this deposit consists of Archean granulite, Paleoproterozoinc migmatitic granite, Paleo-Mesoproterozoic sodic granite, Paleoproterozoic Liaohe group, Mesozoic diorite and Mesozoic monzoritic granite. The Xiquegou deposit which is a Triassic magma-hydrothermal type deposit occurs as vein ore filled fractures along fault zone in unit 3 (dolomitic marble and schist) of Dashiqiao formation of the Paleoproterozoic Liaohe group. Xiquegou Pb-Zn deposit consists of quartz, apatite, calcite, pyrite, arsenopyrite, pyrrhotite, marcasite, sphalerite, chalcopyrite, stannite, galena, tetrahedrite, electrum, argentite, native silver and pyrargyrite. Wallrock alteration of this deposit contains silicification, pyritization, dolomitization, chloritization and sericitization. Based on mineral petrography and paragenesis, dolomites from this deposit are classified two type (1. dolomite (D₀) as wallrock, 2. dolomite (D₁) as wallrock alteration in Pb-Zn mineralization quartz vein ore). The structural formulars of dolomites are determined to be Ca_1.03-1.01Mg_0.95-0.83Fe_0.12-0.02Mn_0.02-0.00(CO₃)₂(D₀) and Ca_1.16-1.00Mg_0.79-0.44Fe_0.53-0.13Mn_0.03-0.00As_0.01-0.00(CO₃)₂(D₁), respectively. It means that dolomites from the Xiquegou deposit have higher content of trace elements compared to the theoretical composition of dolomite. The dolomite (D₁) from quartz vein ore has higher content of these trace elements (FeO, PbO, Sb₂O₅ and As₂O₅) than dolomite (D₀) from wallrock. Dolomites correspond to Ferroan dolomite (D₀), and ankerite and Ferroan dolomite (D₁), respectively. The structural formular of chlorite from quartz vein ore is (Mg_1.65-1.08Fe_2.94-2.50Mn_0.01-0.00Zn_0.01-0.00Ni_0.01-0.00Cr_0.02-0.00V_0.01-0.00Hf_0.01-0.00Pb_0.01-0.00Cu_0.01-0.00As_0.03-0.00Ca_0.02-0.01Al_1.68-1.61)_5.77-5.73(Si_2.84-2.76Al_1.24-1.16)_4.00O₁₀(OH)₈. It indicated that chlorite of quartz vein ore is similar with theoretical chlorite and corresponds to Fe-rich chlorite. Compositional variations in chlorite from quartz vein ore are caused by mainly octahedral Fe²⁺ <-> Mg²⁺ (Mn²⁺) substitution and partly phengitic or Tschermark substitution (Al^3+,VI+Al^3+,IV <-> (Fe²⁺ 또는 Mg²⁺)^VI+(Si⁴⁺)^IV).

• Journal of the Korean Ceramic Society
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• v.41 no.10 s.269
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• pp.749-755
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• 2004

Fluosilicic acid ($H_2SiF_6$) is recovered as aqueous solution which absorbs $SiF_4$ produced from the manufacturing of industrial-graded $H_3PO_4$ or HF. Generally, fluosilicate salts prepared by the reaction between $H_2SiF_6$ and metal salts. Addition of fluosilicate salts to cement endows odd properties through unique chemical reaction with the fresh and hardened cement. In this study, two-component fluosilicate salt based chemical admixtures (MZ) of $4\%,\;6\%$, and $8\%$ concentration were prepared by the reaction of $H_2SiF_6$ ($25\pm2\%$) and metal salts. The effect of concentration of MZ at a constant adding ratio on the hydration and watertightness of cement were investigated respectively. In a cement containing MZ, metal fluorides such as $CaF_2$ and soluble silica by hydrolysis were newly formed during hydration. The total porosity of the hardened cement was lower in the presence of U because of packing role of metal fluoride and pozzolanic reaction of soluble $SiO_2$. Consequently, the watertightness of the hardened paste containing MZ was more improved than non-added (plain) due to an odd hydration between cement and MZ.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.6
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• pp.445-449
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• 2020

Non-volatile memory is approaching its fundamental limits with the Si₃N₄ storage layer, necessitating the use of alternative materials to achieve a higher programming/erasing speed, larger storage window, and better data retention at lower operating voltage. This limitation has restricted the development of the charge-trap memory, but can be addressed by using high-k dielectrics. The paper reviews the doping of nitrogen, titanium, and yttrium on high-k dielectrics as a storage layer by comparing MONOS devices with different storage layers. The results show that nitrogen doping increases the storage window of the Gd₂O₃ storage layer and improves its charge retention. Titanium doping can increase the charge capture rate of HfO₂ storage layer. Yttrium doping increases the storage window of the BaTiO₃ storage layer and improves its fatigue characteristics. Parameters such as the dielectric constant, leakage current, and speed of the memory device can be controlled by maintaining a suitable amount of external impurities in the device.

• Current Photovoltaic Research
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• v.5 no.1
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• pp.25-27
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• 2017

Nanoscale textured black silicon has attracted intensive attention due to its great potential as applications in multicrystalline silicon-based solar cells. It absorbs sunlight over a broad range of wavelengths but introduces large recombination centers, non-uniform doping into cell. In this study, we present a metal-assisted chemical etching technique plus alkaline etching process to fabricate nanoscale pyramid structures with optimized condition. To make the structures, silver nanoparticles-loaded mc-Si wafer was submerged into $H_2O_2/HF$ solution first for nanohole texturing the wafer and textured wafer etched again with KOH solution for making nanoscale pyramid structures. The average reflectivity (350-1050 nm) is about 8.42% with anti-reflection coating.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.454-454
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• 2014

Silicon microwire array is one of the promising platforms as a means for developing highly efficient solar cells thanks to the enhanced light trapping efficiency. Among the various fabrication methods of microstructures, deep reactive ion etching (DRIE) process has been extensively used in fabrication of high aspect ratio microwire arrays. In this presentation, we show precisely controlled Si microwire arrays by tuning the DRIE process conditions. A periodic microdisk arrays were patterned on 4-inch Si wafer (p-type, $1{\sim}10{\Omega}cm$) using photolithography. After developing the pattern, 150-nm-thick Al was deposited and lifted-off to leave Al microdisk arrays on the starting Si wafer. Periodic Al microdisk arrays (diameter of $2{\mu}m$ and periodic distance of $2{\mu}m$) were used as an etch mask. A DRIE process (Tegal 200) is used for anisotropic deep silicon etching at room temperature. During the process, $SF_6$ and $C_4F_8$ gases were used for the etching and surface passivation, respectively. The length and shape of microwire arrays were controlled by etching time and $SF_6/C_4F_8$ ratio. By adjusting $SF_6/C_4F_8$ gas ratio, the shape of Si microwire can be controlled, resulting in the formation of tapered or vertical microwires. After DRIE process, the residual polymer and etching damage on the surface of the microwires were removed using piranha solution ($H_2SO_4:H_2O_2=4:1$) followed by thermal oxidation ($900^{\circ}C$, 40 min). The oxide layer formed through the thermal oxidation was etched by diluted hydrofluoric acid (1 wt% HF). The surface morphology of a Si microwire arrays was characterized by field-emission scanning electron microscopy (FE-SEM, Hitachi S-4800). Optical reflection measurements were performed over 300~1100 nm wavelengths using a UV-Vis/NIR spectrophotometer (Cary 5000, Agilent) in which a 60 mm integrating sphere (Labsphere) is equipped to account for total light (diffuse and specular) reflected from the samples. The total reflection by the microwire arrays sample was reduced from 20 % to 10 % of the incident light over the visible region when the length of the microwire was increased from $10{\mu}m$ to $30{\mu}m$.