• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.168-168
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• 2008

Dimension of a transistor has rapidly shrunk to increase the speed of device and to reduce the power consumption. However, it is accompanied with several problems like direct tunneling through the gate dioxide layer and low conductivity characteristic of poly-Si gate in nano-region. To cover these faults, study of new materials is urgently needed. Recently, high dielectric materials like $Al_2O_3$, $ZrO_2$, and $HfO_2$ are being studied for equivalent oxide thickness (EOT). However, poly-Si gate is not compatible with high-k materials for gate-insulator. Poly Si gate with high-k material has some problems such as gate depletion and dopant penetration problems. Therefore, new gate structure or materials that are compatible with high-k materials are also needed. TiN for metal/high-k gate stack is conductive enough to allow a good electrical connection and compatible with high-k materials. According to this trend, the study on dry etching of TiN for metal/high-k gate stack is needed. In this study, the investigations of the TiN etching characteristics were carried out using the inductively coupled $BCl_3$-based plasma system and adding $Cl_2$ gas. Dry etching of the TiN was studied by varying the etching parameters including $BCl_3$/Ar gas mixing ratio, RF power, DC-bias voltage to substrate, and $Cl_2$ gas addition. The plasmas were characterized by optical emission spectroscopy analysis. Scanning electron microscopy was used to investigate the etching profile.

• Journal of Soil and Groundwater Environment
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• v.12 no.6
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• pp.107-117
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• 2007

Dispersion characteristics and envirounmental impactes of the stream sediments were investigated and geochemical disaster in the Namhae-Hwagye area was predicted. Stream sediments having no possibility of contamination effect and representing drainage basins were collected. Major and hazardous elements concentrations were determined by XRF, ICP-AES and NAA analysis methods. Acid decomposition for the ICP-AES have been used $HClO_4$ and HF with $200^{\circ}C$ heating at 1'st and after that $HClO_4$, HF and HCl with $200^{\circ}C$ heating at 2'nd stage. Hazardous elements concentrations for the stream sediments in the Namhae area were Cu $5.66{\sim}168\;ppm$, Pb $18.0{\sim}40.7\;ppm$, Cr $21.6{\sim}147\;ppm$, Co $4.86{\sim}25.3\;ppm$. Hazardous elements concentrations for the stream sediments in the Hwagye area were Cu $16.4{\sim}41.2\;ppm$, Pb $26.5{\sim}37.5\;ppm$ Cr $79.6{\sim}153\;ppm$, Co $15.7{\sim}29.5\;ppm$. Concentration of Cu and Co in the stream sediments show a negative correlation with $SiO_2$ in all study area. According to E.I.(Enrichment Index) of stream sediments was not enriched in study area. And average E.I. was 0.35 (Namhae) and 0.56 (Hwagye) respectively. The stream sediments were enriched as in order of Pb > Cr > Co > Cu. And the average of Enrichment Factor (E.F.) was 0.46 to 2.84, respectively. E.F. concentration of Cu and Co were nearly similar enrichment characteristic but E.F. concentration of Cr were higher enrichnent characteristic in Namhae than Hwagye area. Pb was highly enriched in all study area but the tolerable level that used to investigate the enrichment degree of hazardous elements, was not exposed to harmful hazardous elements.

• The Journal of the Petrological Society of Korea
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• v.6 no.1
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• pp.19-33
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• 1997

This study reports the results about the petrography and geochemical characteristics of 10 representative volacanic rocks. The Cretaceous volcanic rocks distributed in the vicinity of the Kageo island composed of andesitic rocks, dacitic welded tuff, and rhyolitic rocks in ascending order. Sedimentary rock is the basement in the study area covered with volcanic rocks. Andesitic rocks composed of pyroclastic volcanic breccia, lithic lapilli tuff and cryptocrystallin lava-flow. Most dacitic rocks are lapilli ash-flow welded tuff. Rhyolitic rocks consists of rhyolite tuff and rhyolite lava flow. Rhyolite tuff are lithic crystal ash-flow tuff and crystal vitric ash-flow tuff with somewhat accidental fragments of andesitic rocks, but dacitic rocks. The variation of major and trace element of the volcanic rocks show that contents of $Al_2O_3$, FeO, CaO, MgO, $TiO_2$ decrease with increasing of $SiO_2$. On the basis of Variation diagrams such as $Al_2O_3$ vs. CaO, Th/Yb vs. Ta/Yb, and $Ce_N/YB_N$ vs. $Ce_N$, these rocks represent mainly differentiation trend of calc-alkaline rock series. On the discriminant diagrams such as Ba/La and La/Th ratio, Rb vs. Y + Nb, the volcanic rocks in study area belongs to high-K Orogenic suites, with abundances of trace element and ternary diagram of K, Na, Ca. According to the tectonic discriminant diagram by Wood, these rocks falls into the diestructructive continental margin. K-Ar ages of whole rocks are from andesite to rhyolite $97.0{\pm}6.8~94.5{\pm}6.6,\68.9{\pm}4.8,\61.5{\pm}4.9~60.7{\pm}4.2$ Ma, repectively. Volcanic rocks in study area show well correlation to the Yucheon Group in terms of rock age dating and geochemcial data, and derived from andesitic calc-alkaline magma that undergone low pressure fractional crystallization dominated plagioclase at <30km.

• Journal of the Korean institute of surface engineering
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• v.50 no.5
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• pp.315-321
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• 2017

Antireflective pyramid arrays can be readily obtained via anisotropic etching in alkaline solution (KOH, NaOH), which is widely used in crystalline-Si (c-Si) solar cells. The periodic inverted pyramid arrays show even lower light reflectivity because of their superior light-trapping characteristics. Since this inverted pyramidal structures are mostly achieved using very complex techniques such as photolithograpy and laser processes requiring extra costs, here, we demonstrate the Cu-nanoparticle assisted chemical etching processes to make the inverted pyramidal arrays without the need of photolithography. We have mainly controlled the concentration of $Cu(NO_3)_2$, HF, $H_2O_2$ and temperature as well as time factors that affecting the reaction. Optimal inverted pyramid structure was obtained through reaction parameters control. The reflectance of inverted pyramid arrays showed < 10% over 400 to 1100 nm wavelength range while showing 15~20% in random pyramid arrays.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.323-324
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• 2007

Investigation of improving the properties of UV photodetector which uses the wide bandgap of ZnO are under active progress. In this paper, transparent conducting aluminum-doped Zinc oxide films(AZO) were prepared by rf magnetron sputtering on glass(corning 1737) and p-Si substrate, were then annealed at temperature $400^{\circ}C$ for 2hr. The AZO thin films were deposited by RF sputtering system. HF power and work pressure is 120 W and 15 mTorr, respectively, and the purity of AZO target is 5N. The AZO thin films were deposited at 300, 400, $500^{\circ}C$, and $600^{\circ}C$. For sample deposited at $400^{\circ}C$, we observed best $V_r-I_{ph}$ of 0.94 mA and good transmittance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.11-11
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• 2010

Thin-film-transistors (TFTs) that can be deposited at low temperature have recently attracted lots of applications such as sensors, solar cell and displays, because of the great flexible electronics and transparent. Transparent and flexible transistors are being required that high mobility and large-area uniformity at low temperature [1]. But, unfortunately most of TFT structures are used to be $SiO_2$ as gate dielectric layer. The $SiO_2$ has disadvantaged that it is required to high driving voltage to achieve the same operating efficiency compared with other high-k materials and its thickness is thicker than high-k materials [2]. To solve this problem, we find lots of high-k materials as $HfO_2$, $ZrO_2$, $SiN_x$, $TiO_2$, $Al_2O_3$. Among the High-k materials, $Al_2O_3$ is one of the outstanding materials due to its properties are high dielectric constant ( ~9 ), relatively low leakage current, wide bandgap ( 8.7 eV ) and good device stability. For the realization of flexible displays, all processes should be performed at very low temperatures, but low temperature $Al_2O_3$ grown by sputtering showed deteriorated electrical performance. Further decrease in growth temperature induces a high density of charge traps in the gate oxide/channel. This study investigated the effect of growth temperatures of ALD grown $Al_2O_3$ layers on the TFT device performance. The ALD deposition showed high conformal and defect-free dielectric layers at low temperature compared with other deposition equipments [2]. After ITO was wet-chemically etched with HCl : $HNO_3$ = 3:1, $Al_2O_3$ layer was deposited by ALD at various growth temperatures or lift-off process. Amorphous InGaZnO channel layers were deposited by rf magnetron sputtering at a working pressure of 3 mTorr and $O_2$/Ar (1/29 sccm). The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. The TFT devices were heat-treated in a furnace at $300^{\circ}C$ and nitrogen atmosphere for 1 hour by rapid thermal treatment. The electrical properties of the oxide TFTs were measured using semiconductor parameter analyzer (4145B), and LCR meter.

• Journal of the Korean Vacuum Society
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• v.21 no.2
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• pp.99-105
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• 2012

We fabricated the textured silicon (Si) surface on Si substrates by the electrochemical etching using gold (Au) nanoparticle catalysts. The antireflective property of the fabricated Si nanostructures was improved. The Au nanoparticles of ~20-150 nm were formed by the rapid thermal annealing using thermally evaporated Au films on Si. In the chemical etching, the aqueous solution containing $H_2O_2$ and HF was used. In order to investigate the effect of electrochemical etching on the etching depth and reflectance characteristics, the sample was immersed in the aqueous etching solution for 1 min with and without applied cathodic voltages of -1 V and -2 V. As a result, the solar weighted reflectance, i.e., the averaged reflectance with considering solar spectrum (air mass 1.5), could be efficiently reduced for the electrochemically etched Si by applying the cathodic voltage of -2 V, which is expected to be useful for Si solar cell applications.

• Bulletin of the Korean Chemical Society
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• v.35 no.1
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• pp.35-38
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• 2014

Herein, we report on the preparation of red fluorescent Si nanoparticles stabilized with styrene. Nano-sized Si particles emit fluorescence under UV excitation, which could be used to open up new applications in the fields of optics and semi-conductor research. Unfortunately, conventional methods for the preparation of red fluorescent Si nanoparticles suffer from the lack of a fully-established standard synthesis protocol. A common initial approach during the preparation of semi-conductors is the etching of crystalline Si wafers in a HF/ethanol/$H_2O$ bath, which provides a uniformly-etched surface of nanopores amenable for further nano-sized modifications via tuning of various parameters. Subsequent sonication of the etched surface crumbles the pores on the wafer, resulting in the dispersion of particles into the solution. In this study, we use styrene to occupy these platforms to stabilize the surface. We determine that the liberated silicon particles in ethanol solution interact with styrene, resulting in the substitution of Si-H bonds with those of Si-C as determined via UV photo-catalysis. The synthesized styrene-coated Si nanoparticles exhibit a stable, bright, red fluorescence under excitation with a 365 nm UV light, and yield approximately 100 mg per wafer with a synthesis time of 2 h. We believe this protocol could be further expanded as a cost-effective and high-throughput standard method in the preparation of red fluorescent Si nanoparticles.

• Journal of the Korea Concrete Institute
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• v.17 no.5 s.89
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• pp.769-774
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• 2005

Fluosilicic acid(H2SiF6) is recovered as an aqueous solution which absorbs $SiF_4$ produced from the manufacturing of industrial-graded H3PO4 or HF. Generally, fluosilicates are the salts produced by the reaction of H2SiF6 and metal salts. Addition of fluosilicates to cement endows odd properties through unique chemical reaction with the fresh and hardened cement. This study was performed to know mechanical properties and watertightness using fluosilicates based composite made from fluosilicates and other compounds. Mix proportions for experiments were modulated at 0.45 of water to cement ratio and $0.0-2.0\%$ of adding ratio of fluosilicates based composite. Evaluation for mechanical properties of concrete was conducted to know fresh state of concrete, hardening state of concrete, and watertightness. Evaluation for watertightness of concrete was carried out permeability, absorption test and porosity analysis. In addition. Scanning Electron Microscopy(SEM) and Energy Dispersive X-Ray(EDX) used for investigating micro-structure and atomic component distributed in hardened concrete. It is ascertained that characteristics of mechanical properties and watertightness was more improved than non-added because of packing role of fluosilicates based composite and pozzolanic reaction of soluble $SiO_2$. Also, concrete added fluosilicates based composite had a tendency to delay setting time and only $0.5\%$ addition of fluosilicates based composite delayed 150 minutes compared with non-added.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.255-255
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• 2010

전하 트랩형 비휘발성 메모리는 10년 이상의 데이터 보존 능력과 빠른 쓰기/지우기 속도가 요구 된다. 그러나 두 가지 특성은 터널 산화막의 두께에 따라 서로 trade off 관계를 갖는다. 즉, 두 가지 특성을 모두 만족 시키면서 scaling down 하기는 매우 힘들다. 이것의 해결책으로 적층된 유전막을 터널 산화막으로 사용하여 쓰기/지우기 속도와 데이터 보존 특성을 만족하는 Tunnel Barrier engineered Memory (TBM)이 있다. TBM은 가운데 장벽은 높고 기판과 전극쪽의 장벽이 낮은 crested barrier type이 있으며, 이와 반대로 가운데 장벽은 낮고 기판과 전극쪽의 장벽이 높은 VARIOT barrier type이 있다. 일반적으로 유전율과 밴드갭(band gap)의 관계는 유전율이 클수록 밴드갭이 작은 특성을 갖는다. 이러한 관계로 인해 일반적으로 crested type의 터널 산화막층은 high-k/low-k/high-k의 물질로 적층되며, VARIOT type은 low-k/high-k/low-k의 물질로 적층된다. 이 형태는 밴드갭이 다른 물질을 적층했을 때 전계에 따라 터널 장벽의 변화가 민감하여 전자의 장벽 투과율이 매우 빠르게 변화하는 특징을 갖는다. 결국 전계에 민감도 향상으로 쓰기/지우기 속도가 향상되며 적층된 유전막의 물리적 두께의 증가로 인해 데이터 보존 특성 또한 향상되는 장점을 갖는다. 본 연구에서는 기존의 TBM과 다른 형태의 staggered tunnel barrier를 제안한다. staggered tunnel barrier는 heterostructure의 에너지 밴드 구조 중 하나로 밴드 line up은 두 밴드들이 같은 방향으로 shift된 형태이다. 즉, 가전자대 에너지 장벽의 minimum이 한 쪽에 생기면 전도대 에너지 장벽의 maximum은 반대쪽에 생기는 형태를 갖는다. 이러한 밴드구조를 갖는 물질을 터널 산화막층으로 하게 되면 쓰기/지우기 속도를 증가시킬 수 있으며, 데이터 보존 능력 모두 만족할 수 있어 TBM의 터널 산화막으로의 사용이 기대된다. 본 연구에서 제작한 staggered TBM소자의 터널 산화막으로는 $Si_3N_4$/HfAlO (Hf:Al=1:3)을 사용하여 I-V(current-voltage), Retention, Endurance를 측정하여 메모리 소자로서의 특성을 분석하였으며, 터널 산화막의 제 1층인 $Si_3N_4$의 두께를 1.5 nm, 3 nm일 때의 특성을 비교 분석하였다.