Analysis of Positive Bias Temperature Instability Characteristic for Nano-scale NMOSFETs with La-incorporated High-k/metal Gate Stacks (La이 혼입된 고유전체/메탈 게이트가 적용된 나노 스케일 NMOSFET에서의 PBTI 신뢰성의 특성 분석)
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- Journal of the Korean Institute of Electrical and Electronic Material Engineers
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- v.24 no.3
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- pp.182-187
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- 2011