• Title/Summary/Keyword: HfC coating

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Si and Mg doped Hydroxyapatite Film Formation by Plasma Electrolytic Oxidation

  • Park, Seon-Yeong;Choe, Han-Cheol
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2016.11a
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    • pp.195-195
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    • 2016
  • Titanium and its alloys are widely used as implants in orthopedics, dentistry and cardiology due to their outstanding properties, such as high strength, high level of hemocompatibility and enhanced biocompatibility. Hence, recent works showed that the synthesis of new Ti-based alloys for implant application involves more biocompatible metallic alloying element, such as, Nb, Hf, Zr and Mo. In particular, Nb and Hf are one of the most effective Ti ${\beta}-stabilizer$ and reducing the elastic modulus. Plasma electrolyte oxidation (PEO) is known as excellent method in the biocompatibility of biomaterial due to quickly coating time and controlled coating condition. The anodized oxide layer and diameter modulation of Ti alloys can be obtained function of improvement of cell adhesion. Silicon (Si) and magnesium (Mg) has a beneficial effect on bone. Si in particular has been found to be essential for normal bone and cartilage growth and development. In vitro studies have shown that Mg plays very important roles in essential for normal growth and metabolism of skeletal tissue in vertebrates and can be detected as minor constituents in teeth and bone. The aim of this study is to research Si and Mg doped hydroxyapatite film formation by plasma electrolytic oxidation. Ti-29Nb-xHf (x= 0, 3, 7 and 15wt%, mass fraction) alloys were prepared Ti-29Nb-xHf alloys of containing Hf up from 0 wt% to 15 wt% were melted by using a vacuum furnace. Ti-29Nb-xHf alloys were homogenized for 2 hr at $1050^{\circ}C$. Each alloy was anodized in solution containing typically 0.15 M calcium acetate monohydrate + 0.02 M calcium glycerophosphate at room temperature. A direct current power source was used for the process of anodization. Anodized alloys was prepared using 270V~300V anodization voltage at room. A Si and Mg coating was produced by RF-magnetron sputtering system. RF power of 100W was applied to the target for 1h at room temperature. The microstructure, phase and composition of Si and Mg coated oxide surface of Ti-29Nb-xHf alloys were examined by FE-SEM, EDS, and XRD.

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Morphology of RF-sputtered Mn-Coatings for Ti-29Nb-xHf Alloys after Micro-Pore Form by PEO

  • Park, Min-Gyu;Park, Seon-Yeong;Choe, Han-Cheol
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2016.11a
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    • pp.197-197
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    • 2016
  • Commercially pure titanium (CP Ti) and Ti-6Al-4V alloys have been widely used for biomedical applications. However, the use of the Ti-6Al-4V alloy in biomaterial is then a subject of controversy because aluminum ions and vanadium oxide have potential detrimental influence on the human body due to vanadium and aluminum. Hence, recent works showed that the synthesis of new Ti-based alloys for implant application involves more biocompatible metallic alloying element, such as, Nb, Hf, Zr and Mo. In particular, Nb and Hf are one of the most effective Ti ${\beta}-stabilizer$ and reducing the elastic modulus. Plasma electrolyte oxidation (PEO) is known as excellent method in the biocompatibility of biomaterial due to quickly coating time and controlled coating condition. The anodized oxide layer and diameter modulation of Ti alloys can be obtained function of improvement of cell adhesion. Manganese(Mn) plays very important roles in essential for normal growth and metabolism of skeletal tissue in vertebrates and can be detected as minor constituents in teeth and bone. Radio frequency(RF) magnetron sputtering in the various PVD methods has high deposition rates, high-purity films, extremely high adhesion of films, and excellent uniform layers for depositing a wide range of materials, including metals, alloys and ceramics like a hydroxyapatite. The aim of this study is to research the Mn coatings on the micro-pore formed Ti-29Nb-xHf alloys by RF-magnetron sputtering for dental applications. Ti-29Nb-xHf (x= 0, 3, 7 and 15wt%, mass fraction) alloys were prepared Ti-29Nb-xHf alloys of containing Hf up from 0 wt% to 15 wt% were melted by using a vacuum furnace. Ti-29Nb-xHf alloys were homogenized for 2 hr at $1050^{\circ}C$. Each alloy was anodized in solution containing typically 0.15 M calcium acetate monohydrate + 0.02 M calcium glycerophosphate at room temperature. A direct current power source was used for the process of anodization. Anodized alloys was prepared using 270V~300V anodization voltage at room. Mn coatings was produced by RF-magnetron sputtering system. RF power of 100W was applied to the target for 1h at room temperature. The microstructure, phase and composition of Mn coated oxide surface of Ti-29Nb-xHf alloys were examined by FE-SEM, EDS, and XRD.

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Effect of Ultrathin Film HfO2 by Atomic Layer Deposition on the Propreties of ZnS:Cu,Cl Phosphors (ZnS:Cu,Cl 형광체의 특성에 미치는 원자층 증착 초박막 HfO2의 영향)

  • Kim, Min-Wan;Han, Sand-Do;Kim, Hyung-Su;Kim, Hyug-Jong;Kim, Hyu-Suk;Kim, Suk-Whan;Lee, Sang-Woo;Choi, Byung-Ho
    • Korean Journal of Materials Research
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    • v.16 no.4
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    • pp.248-252
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    • 2006
  • An investigation is reported on the coating of ZnS:Cu,Cl phosphors by $HfO_2$ using atomic layer deposition method. Hafnium oxide films were prepared at the chamber temperature of $280^{\circ}C$ using $Hf[N(CH_3)_2]_4\;and\;O_2$ as precursors and reactant gas, respectively. XPS and ICP-MS analysis showed the surface composition of coated phosphor powder was hafnium oxide. In FE-SEM analysis, the surface morphology of uncoated phosphors became smoother and clearer as the number of ALD cycle increased from 900 to 1800. The photoluminescence intensity for coated phosphors showed $7.3{\sim}13.4%$ higher than that of uncoated. The effect means that the reactive surface is uniformly coated with stable hafnium oxide to reduce the dead surface layer without change of bulk properties and also its absorptance is almost negligible due to ultrathin(nano-scaled) films. The growth rate is about $1.1{\AA}/cycle$.

Effect of compliance current on resistive switching characteristics of solution-processed HfOx-based resistive switching RAM (ReRAM)

  • Jeong, Ha-Dong;Jo, Won-Ju
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.255-255
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    • 2016
  • Resistive random access memory (ReRAM)는 낮은 동작 전압, 빠른 동작 속도, 고집적화 등의 장점으로 인해 차세대 비휘발성 메모리 소자로써 많은 관심을 받고 있다. 최근에 ReRAM 절연막으로 NiOx, TiOx, AlOx TaOx, HfOx와 같은 binary metal oxide 물질들을 적용하는 연구가 활발히 진행되고 있다. 특히, HfOx는 안정적인 동작 특성을 나타낸다는 점에서 ReRAM 절연막 물질로 적합하다고 보고되고 있다. ReRAM 절연막을 형성할 때, 물리 기상 증착 방법 (PVD)이나 화학 기상 증착법 (CVD)과 같은 방법이 많이 이용된다. 이러한 증착 방법들은 고품질의 박막을 형성시킬 수 있는 장점이 있다. 하지만, 높은 온도에서의 공정과 고가의 진공 장비가 이용되기 때문에 경제적인 문제가 있으며, 기판 또는 금속에 플라즈마 손상으로 인한 문제가 발생할 수 있다. 따라서 이러한 문제점들을 개선하기 위해 용액 공정이 많은 관심을 받고 있다. 용액 공정은 공정과정이 간단할 뿐만 아니라 소자의 대면적화가 가능하고 공정온도가 낮으며 고가의 진공장비가 필요하지 않은 장점을 가진다. 따라서 본 연구에서는, 용액공정을 이용하여 HfOx 기반의 ReRAM 제작하였고 $25^{\circ}C$$85^{\circ}C$에서 ReRAM의 동작특성에 미치는 compliance current의 영향을 평가하였다. 실험 방법으로는, hafnium chloride (0.1 M)를 2-methoxyethanol에 충분히 용해시켜서 precursor를 제작하였다. 이후, p-type Si 기판 위에 습식산화를 통하여 300 nm 두께의 SiO2 절연층을 성장시킨 후, 하부전극을 형성하기 위해 electron beam evaporation을 이용하여 10/100 nm 두께의 Ti/Pt 전극을 증착하였다. 순차적으로, 제작된 산화물 precursor를 이용하여 Pt 위에 spin coating 방법으로 1000 rpm 10 초, 6000 rpm 30초의 조건으로 두께 35 nm의 HfOx 막을 증착하였다. 최종적으로, solvent 및 불순물을 제거하기 위해 $180^{\circ}C$의 온도에서 10 분 동안 열처리를 진행하였으며, 상부 전극을 형성하기 위해 electron beam evaporation을 이용하여 Ti와 Al을 각각 50 nm, 100 nm의 두께로 증착하였다. ReRAM 동작에서 compliance current가 미치는 영향을 평가하기 위하여 compliance current를 10mA에서 1mA까지 변화시키면서 측정한 결과, $25^{\circ}C$에서는 compliance current의 크기와 상관없이 일정한 메모리 윈도우와 우수한 endurance 특성을 얻는 것을 확인하였다. 한편, $85^{\circ}C$의 고온에서 측정한 경우에는 1mA의 compliance current를 적용하였을 때, $25^{\circ}C$에서 측정된 메모리 윈도우 크기를 비슷하게 유지하면서 더 우수한 endurance 특성을 얻는 것을 확인하였다. 결과적으로, 용액공정 방법으로 제작된 ReRAM을 측정하는데 있어서 compliance current를 줄이면 보다 우수한 endurance 특성을 얻을 수 있으며, ReRAM 소자의 전력소비감소에 효과적이라고 기대된다.

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A Study on Improvement of the Ablation Resistance of Two Types of the Carbon/Carbon Composites by HfC Coating (하프늄카바이드 코팅을 통한 2종형상의 탄소/탄소복합재의 내삭마성 향상연구)

  • Kang, Bo-Ram;Kim, Ho-Seok;Oh, Phil-Yong;Choi, Seong-Man
    • Composites Research
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    • v.33 no.4
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    • pp.205-212
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    • 2020
  • In this study, HfC was coated on two types of carbon/carbon composites coated with SiC by vacuum plasma spraying(VPS). The experiment was performed using a plasma wind tunnel with heat flux of 5.06 MW/㎡ for 120 s heat flux before and after the coating. The mass ablation rate was calculated through the mass change before and after the test, and the length change was measured by using calipers and high speed camera. The oxidation/ablation behavior were observed by FE-SEM with EDS analysis of the specimens cross section. The plasma wind tunnel test results showed that the coated specimens had low weight loss and length change, and high oxidation/ablation resistance. However, two types of the specimens tested under the same conditions were different in the ablation behavior and ablation rate, and it was evaluated that the cylindrical type had higher oxidation/ablation resistance.

Investigation of porous silicon AR Coatings for crystalline silicon solar cells (결정질 태양전지 적용을 위한 다공성 실리콘 반사방지막 특성 분석)

  • Lee, Hyun-Woo;Kim, Do-Wan;Lee, Eun-Joo;Lee, Soo-Hong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.152-153
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    • 2006
  • 본 연구에서는 태양전지 표면에 입사된 광자의 반사손실을 최소화하기 위한 방법으로써 기판 표면에 다공성 실리콘층을 이용한 반사방지막 (Anti-Reflection Coating, ARC)을 형성하는 실험을 하였다. 다공성 실리콘(Porous silicon, PSi)은 실온에서 일정 비율로 만든 전해질 용액($HF-C_2H_5OH-H_2O$)을 사용하여 실리콘 표면을 양극산화처리 함으로써 단순 공정만으로 실리콘 기판의 반사율을 높일 수 있다. 또한 새로운 레이어(layer)없이 기존 기판을 식각시켜 만들기 때문에 박막형 태양전지를 제작시 적용이 용이하다. 저비용, 단순공정의 이점을 살려 전류밀도에 따른 PSi의 반사방지막으로써의 특성을 비교 분석하였다.

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An approach to minimize reactivity penalty of Gd2O3 burnable absorber at the early stage of fuel burnup in Pressurized Water Reactor

  • Nabila, Umme Mahbuba;Sahadath, Md. Hossain;Hossain, Md. Towhid;Reza, Farshid
    • Nuclear Engineering and Technology
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    • v.54 no.9
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    • pp.3516-3525
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    • 2022
  • The high capture cross-section (𝜎c) of Gadolinium (Gd-155 and Gd-157) causes reactivity penalty and swing at the initial stage of fuel burnup in Pressurized Water Reactor (PWR). The present study is concerned with the feasibility of the combination of mixed burnable poison with both low and high 𝜎c as an approach to minimize these effects. Two considered reference designs are fuel assemblies with 24 IBA rods of Gd2O3 and Er2O3 respectively. Models comprise nuclear fuel with a homogeneous mixture of Er2O3, AmO2, SmO2, and HfO2 with Gd2O3 as well as the coating of PaO2 and ZrB2 on the Gd2O3 pellet's outer surface. The infinite multiplication factor was determined and reactivity was calculated considering 3% neutron leakage rate. All models except Er2O3 and SmO2 showed expected results namely higher values of these parameters than the reference design of Gd2O3 at the early burnup period. The highest value was found for the model of PaO2 and Gd2O3 followed by ZrB2 and HfO2. The cycle burnup, discharge burnup, and cycle length for three batch refueling were calculated using Linear Reactivity Model (LRM). The pin power distribution, energy-dependent neutron flux and Fuel Temperature Coefficient (FTC) were also studied. An optimization of model 1 was carried out to investigate effects of different isotopic compositions of Gd2O3 and absorber coating thickness.

Long Length YBCO Coated Conductors Prepared by an MOD Process on Buffered Metallic Tapes

  • Chung, Kook-Chae;Yoo, Jai-Moo;Ko, Jae-Woong;Kim, Young-Kuk;Kim, Tae-Hyung;Ko, Rock-Kil
    • Progress in Superconductivity and Cryogenics
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    • v.8 no.4
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    • pp.12-14
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    • 2006
  • YBCO coated conductors have been fabricated by the reel-to-reel processing using TFA-MOD method. In this work, the fluorine-free Y & Cu precursor solution was synthesized to shorten the calcining time by reducing the evolution of HF gas, thus the meter-long YBCO precursor films can be made within few hours by the continuous slot-die coating & calcination step using the F-free Y & Cu precursor solution. The annealing step was followed to make the YBCO films by the reel-to-reel method with the vertical gas flow system onto the moving tape. To increase the growth rate of the YBCO films by enhancing the removal of HF gas, the low total pressure was adopted in the annealing processing. And the water partial pressure and the oxygen partial pressure were varied to optimize the growth conditions of the MOD-YBCO films on the buffered metal tape. FE-SEM and XRD were used to investigate the surface morphologies and the texture of the meter-long YBCO films. The end-to-end critical current $(I_c)$ of 63A/cm-width and the critical current density $(J_c)$of $0.9MA/cm^2$ with the thickness of $0.7{\mu}m$ were obtained in the 0.42m long coated conductor.

Recovery of Silicon Wafers from the Waste Solar Cells by H3PO4-NH4HF2-Chelating Agent Mixed Solution (인산-산성불화암모늄-킬레이트제 혼합용액에 의한 폐태양전지로부터 실리콘웨이퍼의 회수)

  • Koo, Su-Jin;Ju, Chang-Sik
    • Korean Chemical Engineering Research
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    • v.51 no.6
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    • pp.666-670
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    • 2013
  • Recovery method of silicon wafer from defective products generated from manufacturing process of silicon solar cells was studied. The removal effect of the N layer and antireflection coating (ARC) of the waste solar cell were investigated at room temperature ($25^{\circ}C$) by variation of concentration of $H_3PO_4$, $NH_4HF_2$, and concentration and types of chelating agent. Removal efficiency was the best in the conditions; 10 wt% $H_3PO_4$ 2.0 wt% $NH_4HF_2$, 1.5 wt% Hydantoin. Increasing the concentration of $H_3PO_4$, the surface contamination degree was increased and the thickness of the silicon wafe became thicker than the thickness before surface treatment because of re-adsorption on the silicon wafer surface by electrostatic attraction of the fine particles changed to (+). The etching method by mixed solution of $H_3PO_4$-$NH_4HF_2$-chelating agents was expected to be great as an alternative to conventional RCA cleaning methods and as the recycle method of waste solar cells, because all processes are performed at room temperature, the process is simple, and less wastewater, the removal efficiency of the surface of the solar cell was excellent.

Nanotexturing and Post-Etching for Diamond Wire Sawn Multicrystalline Silicon Solar Cell (다이아몬드 와이어에 의해 절단된 다결정 실리콘 태양전지의 나노텍스쳐링 및 후속 식각 연구)

  • Kim, Myeong-Hyun;Song, Jae-Won;Nam, Yoon-Ho;Kim, Dong-Hyung;Yu, Si-Young;Moon, Hwan-Gyun;Yoo, Bong-Young;Lee, Jung-Ho
    • Journal of the Korean institute of surface engineering
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    • v.49 no.3
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    • pp.301-306
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    • 2016
  • The effects of nanotexturing and post-etching on the reflection and quantum efficiency properties of diamond wire sawn (DWS) multicrystalline silicon (mc-Si) solar cell have been investigated. The chemical solutions, which are acidic etching solution (HF-$HNO_3$), metal assisted chemical etching (MAC etch) solutions ($AgNO_3$-HF-DI, HF-$H_2O_2$-DI) and post-etching solution (diluted KOH at $80^{\circ}C$), were used for micro- and nano-texturing at the surface of diamond wire sawn (DWS) mc-Si wafer. Experiments were performed with various post-etching time conditions in order to determine the optimized etching condition for solar cell. The reflectance of mc-Si wafer texturing with acidic etching solution showed a very high reflectance value of about 30% (w/o anti-reflection coating), which indicates the insufficient light absorption for solar cell. The formation of nano-texture on the surface of mc-Si contributed to the enhancement of light absorption. Also, post-etching time condition of 240 s was found adequate to the nano-texturing of mc-Si due to its high external quantum efficiency of about 30% at short wavelengths and high short circuit current density ($J_{sc}$) of $35.4mA/cm^2$.