• 한국전기전자재료학회논문지
• /
• 제24권9호
• /
• pp.710-712
• /
• 2011

In this study, we fabricate resistive switching random access memory (ReRAM) devices constructed with a Al/$HfO_2$/ITO structure on glass substrates and investigate their memory characteristics. The hafnium oxide thin film used as a resistive switching layer is sputtered at room temperature in a sputtering system with a cooling unit. The Al/$HfO_2$/ITO device exhibits bipolar resistive switching characteristics, and the ratio of the high resistance (HRS) to low resistance states (LRS) is more than 60. In addition, the resistance ratio maintains even after $10^4$ seconds.

• 마이크로전자및패키징학회지
• /
• 제19권1호
• /
• pp.39-45
• /
• 2012

Cu-Cu 패턴의 직접접합 공정을 위하여 Buffered Oxide Etch(BOE) 및 Hydrofluoric acid(HF)의 습식 조건에 따른 Cu와 $SiO_2$의 식각 특성에 대한 평가를 수행하였다. 접촉식 3차원측정기(3D-Profiler)를 이용하여 Cu와 $SiO_2$의 단차 및 Chemical Mechanical Polishing(CMP)에 의한 Cu의 dishing된 정도를 분석 하였다. 실험 결과 BOE 및 HF 습식 식각 시간이 증가함에 따라 단차가 증가 하였고, BOE가 HF보다 더 식각 속도가 빠른 것을 확인하였다. BOE 및 HF 습식 식각 후 Cu의 dishing도 식각시간 증가에 따라 감소하였다. 식각 후 산화막 유무를 알아보기 위해 Cu표면을 X-선 광전자 분광법(X-ray Photoelectron Spectroscopy, XPS)를 이용하여 분석 한 결과 HF습식 식각 후 BOE습식 식각보다 Cu표면산화막이 상대적으로 더 얇아 진 것을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
• /
• pp.366-367
• /
• 2006

In general, HF chemistry lifts off the particles during scrubbing after polishing and effectively removes particles. It is sometimes impossible to apply HF chemistry on W plug due to the degradation of electrical characteristics of a device. In this paper, a post W CMP cleaning process is proposed to remove residue particles without applying HF chemistry. After W CMP, recessed plugs are created, therefore they easily trap slurry particles during CMP process. These particles in recessed plug are not easy to remove by brush scrubbing when $NH_4OH$ chemistry is used for the cleaning because the brush surface can not reach the recessed area of plugs. Buffing with oxide slurry was followed by W CMP due to its high selectivity to W. The buffing polishes only oxide slightly which creates higher plug profiles than surrounding oxide. Higher profiles make the brush contact much more effectively and result in a similar particle removal efficiency even in $NH_4OH$ cleaning to that in HF brush scrubbing.

• Transactions on Electrical and Electronic Materials
• /
• 제12권3호
• /
• pp.127-130
• /
• 2011

We investigated the effects of $O_2$ annealing (i.e., temperature and time) on the characteristics of hafnium silicate ($HfSi_xO_y$) films deposited on a Si substrate by atomic layer deposition process (ALD). We found that the post deposition annealing under oxidizing ambient causes the oxidation of residual Hf metal components, resulting in the improvement of electrical characteristics (e.g., hysteresis window and leakage current are decreased). In addition, we observed the annealing temperature is more important than the annealing time for post deposition annealing. Based on these observations, we suggest that post deposition annealing under oxidizing ambient is necessary to improve the electrical characteristics of $HfSi_xO_y$ films deposited by ALD. However, the annealing temperature has to be carefully controlled to minimize the regrowth of interfacial oxide, which degrades the value of equivalent oxide thickness.

• 한국진공학회지
• /
• 제22권5호
• /
• pp.245-249
• /
• 2013

MOSFET 구조의 차세대 Oxide 박막으로 주목받고 있는 $HfO_X$박막을 rf magnetron sputter를 이용하여 Si(100) 기판 위에 증착하였다. 증착시 산소의 유량을 5, 10, 15 sccm으로 변화를 주며 증착하였고 이후 furnace에서 400부터 $800^{\circ}C$까지 질소분위기로 열처리 하였다. 실험결과 $HfO_X$ 박막의 전기적 특성은 산소유량 증가에 따라 누설전류 특성이 향상되었으나, 열처리 온도가 증가함에 따라서는 감소하였다. 특히, 이 논문에서는 Nano-indenter와 AFM으로 $HfO_X$ 박막의 nanomechanics 특성을 측정하였다. 측정 결과에 의하면 열처리 온도가 증가함에 따라 최대 압입력을 기준으로 최대 압입 깊이가 24.9 nm에서 38.8 nm로 증가하였으며 특히 $800^{\circ}C$ 열처리된 박막에서 압입 깊이가 급격하게 증가하였다. 이러한 압입 깊이의 급격한 증가는 박막내 응력 완화에 의한 스트레스 변화로 예상되며, 그 원인으로 증착시 박막내 포함된 산소가 열처리 조건에 의해 빠져나감에 의한 것으로 판단된다.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 1996년도 재료학회 춘계학술발표회
• /
• pp.75-75
• /
• 1996

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 하계학술대회 논문집
• /
• pp.331-331
• /
• 2009

Hafnium oxide ($HfO_2$) attracted by one of the potential candidates for the replacement of si-based oxides. For applications of the high-k gate dielectric material, high thermodynamic stability and low interface-trap density are required. Furthermore, the amorphous film structure would be more effective to reduce the leakage current. To search the gate oxide materials, metal-insulator-metal (MIM) capacitors was fabricated by pulsed laser deposition (PLD) on indium tin oxide (ITO) coated glass with different oxygen pressures (30 and 50 mTorr) at room temperature, and they were deposited by Au/Ti metal as the top electrode patterned by conventional photolithography with an area of $3.14\times10^{-4}\;cm^2$. The results of XRD patterns indicate that all films have amorphous phase. Field emission scanning electron microscopy (FE-SEM) images show that the thickness of the $HfO_2$ films is typical 50 nm, and the grain size of the $HfO_2$ films increases as the oxygen pressure increases. The capacitance and leakage current of films were measured by a Agilent 4284A LCR meter and Keithley 4200 semiconductor parameter analyzer, respectively. Capacitance-voltage characteristics show that the capacitance at 1 MHz are 150 and 58 nF, and leakage current density of films indicate $7.8\times10^{-4}$ and $1.6\times10^{-3}\;A/cm^2$ grown at 30 and 50 mTorr, respectively. The optical properties of the $HfO_2$ films were demonstrated by UV-VIS spectrophotometer (Scinco, S-3100) having the wavelength from 190 to 900 nm. Because films show high transmittance (around 85 %), they are suitable as transparent devices.

• 한국전기전자재료학회논문지
• /
• 제11권1호
• /
• pp.33-40
• /
• 1998

The composite SiO$_2$/Si$_3$N$_4$/SiO$_2$(ONO) film formed by oxidation on nitride film has been widely studied as DRAM stacked capacitor multi-dielectric films. Load lock(L/L) LPCVD system by HF cleaning is used to improve electrical capacitance and to scale down of effective thickness for memory device, but is brings a new problem. Nitride film deposited using HF cleaning shows selective deposition on poly silicon and oxide regions of capacitor. This problem is avoidable by carpeting chemical oxide using $H_2O$$_2$cleaning before nitride deposition. In this paper, we study the limit of nitride thickness for abnormal oxidation and the initial deposition time for nitride deposition dependent on underlayer materials. We proposed an advanced fabrication process for stacked capacitor in order to avoid selective deposition problem and show the usefulness of nitride deposition using L/L LPCVD system by $H_2O$$_2$cleaning. The natural oxide thickness on polysilicon monitor after HF and $H_2O$$_2$cleaning are measured 3~4$\AA$, respectively. Two substrate materials have the different initial nitride deposition times. The initial deposition time for polysilicon is nearly zero, but initial deposition time for oxide is about 60seconds. However the deposition rate is constant after initial deposition time. The limit of nitride thickness for abnormal oxidation under the HF and $H_2O$$_2$cleaning method are 60$\AA$, 48$\AA$, respectively. The results obtained in this study are useful for developing ultra thin nitride fabrication of ONO scaling and for avoiding abnormal oxidation in stacked capacitor application.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 추계학술대회 논문집
• /
• pp.9-10
• /
• 2007

In this paper, Thin films of $HfO_2$/Hf were deposited on p-type wafer by Atomic Layer Deposition(ALD). And we studied the electrical characterization of $HfO_2$/Hf/Si MOS capacitor depending on thickness of Hf metal layer. $HfO_2$ films were deposited using TEMAH and $O_3\;at\;350^{\circ}C$. Samples were then annealed using furnace heating to $500^{\circ}C$. The MOS capacitor of round-type was fabricated on Si substrates. Through TEM(Transmission Electron Microscope), XRD(X-ray Diffraction), capacitance-voltage(C-V) and current-voltage(I-V) analysis, the role of thin Hf metal layer for the better $HfO_2$/Si interface property was investigated.

• 센서학회지
• /
• 제8권5호
• /
• pp.414-420
• /
• 1999

희생층을 제거하는 기술은 표면 마이크로머시닝 공정의 핵심기술중 하나이다. 그러나 희생층을 제거하는데 널리 쓰이는 BHF 용액을 포함한 HF 수용액은 희생층 제거시 금속층으로 쓰이는 알루미늄도 같이 식각하는 것으로 알려져 있다. 기존의 문헌에서 $NH_4F$:HF:glycerine=4:1:2의 비를 갖는 혼합 용액이 알루미늄과 PSG 간의 식각 선택비가 최적조건으로 제시되었지만 이 희생층 식각액 또한 상당한 알루미능 식각률을 가지고 있다. 본 논문에서는 HF, $NH_4F$, glycerine의 농도를 광범위하게 변화시켜 희생층 제거에 필요한 최적 혼합비를 개발하였으며 그 결과 $NH_4F$:HF:glycerine=2:1:4의 혼합비에서 약 7,700정도의 PSG와 Al의 식각 선택비를 가져 기존의 최적 식각 선택비보다 차수가 약 6배정도 향상된 희생층 식각액을 얻을 수 있었다. 이 조건에서 PSG의 식각률은 희생층 제거시 충분히 빠른 값인 약 $2.1\;{\mu}m/min$을 나타내었다. 이러한 개발된 희생층 식각액은 표면 마이크로머시닝 공정에서 알루미늄 금속 공정의 추가를 용이하게 한다.