• Title/Summary/Keyword: Hexamethyldisiloxane

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The Dielectric Properties of Hexamethyldisiloxane Thin Films by Plasma Polymerization (플라즈마 중합법에 의한 Hexamethyldisiloxane 박막의 유전특성)

  • 이상희;최충석;신태현;이덕출
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1993.11a
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    • pp.131-133
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    • 1993
  • Plasma polymerized thin films were prepared using an interelectrode capacitively coupled gas flow type reactor. Hexamethyldisiloxane was chosen as the monomer to be used. The dielectric properties of the thin films have been investigated with the changes of discharge power, heat treatment temperature and frequency. The relative dielectric constant was increased with an increasing of discharge power, but was decreased with an increasing of heat treatment temperature.

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Electrical Properties of Plasma Polymerized Hexamethyldisiloxane Thin Film (플라즈마 중합법에 의한 헥사메틸디실록산 박막의 전기적 특성)

  • 이상희;이덕출
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.1
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    • pp.43-47
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    • 2001
  • Plasma polymerized hexamethyldisiloxane thin film was fabricated by employing an inter-electrode capacitively coupled type apparatus under the following conditions : carrier gas flow rate of 11 sccm, reaction pressure of 0.1 torr, discharge frequency of 13.56 MHz and discharge power of 30∼90 W. Polymerization rate of thin film fabricated at the discharge power of 90W is 32.5nm/min. Relative dielectric constant and dielectric loss tangent of thin film shows 3.2∼3.8 and 2.6x10$\^$-3/∼4.51x10$\^$-3/ respectively in the frequency range of 1 kHz∼1 MHz. As the annealing temperature is increased, the relative dielectric constant gradually decreases while the dielectric loss tangent increases. The current density increase gradually with increasing annealing temperature and electric field. The electric conduction of the heaxamethyldisiloxane thin film shows Schottky effect.

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A Study on the Permeation Properties of Permanent Gases and condensable Vapors through Hexamethyldisiloxane Plasma-Polymerized Membranes (Hexamethyldisiloxane 플라즈마 중합막을 통한 영구기체 및 응축성 증기의 투과특성에 관한 연구)

  • Oh, Sae-Joong
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.19 no.3
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    • pp.699-706
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    • 2018
  • The permeation properties of plasma polymer membranes were studied for permanent gases such as He, $H_2$, $O_2$, $N_2$, $CH_4$ and condensable vapors such as $CO_2$, $C_2H_4$, $C_3H_8$. The plasma polymers were prepared by the discharge of microwave or radiofrequency(RF) wave. Hexamethyldisiloxane (HMDS) vapor was used as a monomer for plasma polymerization. In HMDS plasma-polymerized membranes prepared under microwave discharge, the permeability coefficient was dependent of the kinetic molecular diameter of the permeate gases. Additionally the membranes showed higher $O_2/N_2$ permselectivity compared to the plasma polymers from radiofrequency discharge. On the contrary, in the HMDS plasma-polymerized membranes prepared under radiofrequency discharge, the permeability coefficient was dependent of the critical temperature of the permeant gases. The membranes showed high selectivities of $C_2H_4$ and $C_3H_8$ over $N_2$. The permeability coefficient of plasma polymerized membranes prepared under microwave discharge was dependent of the molecular diameter of permeant gases because of high crosslinking density of the membrane. However, the crosslinking density of the plasma polymerized membranes prepared under RF discharge was lower because the energy density of RF wave is weaker than that of microwave. Hence, the permeability of RF plasma polymerized membranes became dependent of the critical temperature rather than molecular diameter of the gases.

Preparation and Characterization of Thin Films by Plasma Polymerization of Hexamethyldisiloxane

  • Lee, Sang-Hee;Lee, Duck-Chool
    • Electrical & Electronic Materials
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    • v.11 no.10
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    • pp.66-71
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    • 1998
  • Plasma polymerized hexamethyldisiloxane (PPHMDSO) thin films were produced using an electrode capacitively coupled apparatus. Fourier transform infrared spectroscopy analysis indicated that the thin film spectra are composed not only of the corresponding monomer bands but also of several new bands. Auger electron spectroscopy analysis indicated that the permeation depth of aluminum into the films is ca. 30nm when top electrode is deposited by evaporation aluminum. The increase of relative dielectric constant and decrease of dielectric loss tangent with the discharge power is originated from high cross-link of the films.

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A study on the fabrication and electric conduction characteristics of Hexamethyldisiloxane thin films by plasma polymerization method (플라즈마중합법에 의한 헥사매틸디실록산 박막의 제조 및 전기전도특성)

  • Park, J.K.;Lee, S.H.;Lee, D.C.;Cho, S.W.;Woo, H.H.;Lee, J.T.;Kim, B.Y.
    • Proceedings of the KIEE Conference
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    • 1995.07c
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    • pp.1168-1170
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    • 1995
  • The purpose of this thesis is to fabricate the hexamethyldisiloxane thin film by plasma polymerization method, and to investigate the electric conduction characteristics of plasma polymerized thin film. Current density was measured in being changed annealing temperature(room temperature${\sim}125[^{\circ}C]$) and electric field intensity($10^5{\sim}1.2{\times}10^6$[V/cm]). The current density of thin films fabricated at discharge power of $30{\sim}90$[W] showed $1.3{\times}10^{-11}{\sim}3.1{\times}10^{-12}[A/cm^2]$ after 10 minutes of permission of electric field. The current density increased gradually with increasing of annealing temperature and electric field intensity. The electric conduction type of thin films fabricated in discharge power of 90[W] agreed with Schottky type.

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Plasma-mediated Hydrophobic Coating on a Silicate-based Yellow Phosphor for the Enhancement of Durability (플라즈마 소수성 코팅을 이용한 실리케이트계 황색형광체의 내구성 개선에 관한 연구)

  • Jang, Doo Il;Jo, Jin Oh;Ko, Ranyoung;Lee, Sang Baek;Mok, Young Sun
    • Korean Chemical Engineering Research
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    • v.51 no.2
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    • pp.214-220
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    • 2013
  • Hydrophobic coating on a silicate-based yellow phosphor ($Sr_2SiO_4:Eu^{2+}$) was carried out by using hexamethyldisiloxane (HMDSO) precursor in an atmospheric pressure dielectric barrier discharge plasma reactor, eventually to improve the long-term stability and reliability of the phosphor. The phosphor powder samples were characterized by a scanning electron microscope (SEM), a transmission electron microscope (TEM), a fluorescence spectrophotometer and a contact angle analyzer. After the coating was prepared, the contact angle of the phosphor powder increased to $133.0^{\circ}$ for water and to $140.5^{\circ}$ for glycerol, indicating that a hydrophobic layer was formed on its surface. The phosphor coated with HMDSO exhibited photoluminescence enhancement up to 7.8%. The SEM and TEM images of the phosphor powder revealed that the plasma coating led to a morphological change from grain-like structure to smooth surface with 31~46 nm thick hydrophobic layer. The light emitting diode (3528 1 chip LED) fabricated with the coated phosphor showed a substantial enhancement in the reliability under a special test condition at $85^{\circ}C$ and 85% relative humidity for 1,000 h (85/85 testing). The plasma-mediated method proposed in this work may be applicable to the formation of 3-dimensional coating layer on irregular-shaped phosphor powder, thereby improving the reliability.