• Coupled systems mechanics
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• v.8 no.6
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• pp.473-488
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• 2019

The present work is the study of mechanical behavior due to variation of the geometrical parameters in the core of the sandwich honeycomb panel. This study has allowed us to increase or decrease the strains and stresses of the panel, in changing the angle of alveolus, as explained and described below. In taking into consideration the results obtained previously to improve the mechanical properties and increase the adhesion of different parts of the panel, without changing the adhesive, we have conceived two new models, in increasing the contact surfaces in boundary of each part of the panel and giving a conical hexagonal shape in his corp.

• Journal of the Optical Society of Korea
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• v.18 no.4
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• pp.377-381
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• 2014

Coupled guided modes, proposed in various modified hollow hexagonal cavities each attached internally to a hexagon, were demonstrated by investigating the laser oscillations in semiconductor cavities. The mode spacing between two adjacent lasing peaks decreased as the size of the internal hexagon increased, due to the increased round-trip length of the coupled guided modes. The linear dependency of the inverse mode spacing to the calculated round-trip length strongly confirmed the lasing of the coupled guided modes. The proposed modes in common-sized external cavities showed resonance structure that could be adjusted widely by controlling the size of the internal hexagon.

• Journal of the Korean Ceramic Society
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• v.42 no.5 s.276
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• pp.304-307
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• 2005

The possible configurations of hydroxyl group in hexagonal hydroxyapatite were identified through molecular orbital calculation. The molecular orbital interaction between O and H in hydroxyl column was analyzed using charge variation and Bond Overlap Population (BOP). We supposed 5 kinds of O-H bond configurations as cluster types of I, II, III, IV, and V. Mulliken's population analysis was applied to evaluate ionic charges of O, H, P, and Ca ions, and BOPs (Bond Overlap Populations) in order to discuss the bond strength change by the atomic arrangement. The stability of each O-H bond configuration was analyzed using bond overlap and ionic charge.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.4
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• pp.326-332
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• 2008

In this work CdS films were prepared by using chemical bath deposition, which is simple and inexpensive technique suitable for large deposition area. Annealing in air at different temperatures (300, 350, 400, 450 and $500^{\circ}C$) at constant time of 30 min, also for different times (15, 30, 45, 60 and 90 min) at constant temperature ($300^{\circ}C$) is achieved. X-Ray analysis has confirmed the formation of cadmium oxide (CdO) with slight increase in grain size, shift towards lower scattering angle due to relaxation in the tensile strain for deposition films, and structure change from cubic and hexagonal to the hexagonal. From electrical properties, significant increase in electrical conductivity appeared in samples annealed at $300^{\circ}C$ for 60 min, and at $350^{\circ}C$ for 30 min.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.815-818
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• 2002

Mn doped hexagonal phase of ZnS has been studied as a yellow-orange phosphor for the application to fluorescent displays operated at low voltages. It was found that luminescence from $Mn^{2+}$ was increased as the Mn concentration was increased up to1.2 mol% of host lattice. This study has been attempted by adding trivalent ions such as $Al^{3+}$ or $Bi^{3+}$ to ZnS:Mn as an agent to do the efficient incorporation of Mn ions into ZnS:Mn lattice, resulting in a significant improvement in the phosphor performance, especially at low voltages.

• Journal of Electrical Engineering and Technology
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• v.5 no.4
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• pp.637-639
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• 2010

Hexagonal boron nitride (BN) films were prepared. The process involved, spraying BN powder-dispersed $H_3BO_4-BCl_3$-ethyl alcohol solution on quartz plates, and the drying off quartz plates before, and annealing at $1070^{\circ}C$ in a nitrogen atmosphere. The optical energy band gap of the BN films was 5.28 eV. Photoluminescence peaks with energies of 3.44, 3.16, 2.97, and 2.35 eV at 10 K were observed and analyzed. Accordingly, these have resulted from donor-acceptor pair recombinations.

• Electrical & Electronic Materials
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• v.7 no.1
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• pp.49-56
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• 1994

Polycrystalline CdS thin films were deposited by using EBE method and its crystal structure, surface morphology, electrical and optical properties as a function of annealing temperature were investigated. It was found that optimum growth conditions were substrate temperature annealing temperature 300[.deg. C]. The films were hexagonal structure preferred(002) plane and maximum grain size was 421[.angs.]. As the results, resistivity and optical transmittance of CdS thin films were $8.3{\times}{10^3}$[.ohm.cm] and 89[%] respectively.

• Transactions of Materials Processing
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• v.16 no.8
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• pp.567-574
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• 2007

Double layered tube is assembled with an inner tube and an outer tube, similar in material or not, contacting closely and deforming simultaneously when subjected to external force. For the manufacturing of double layered tube, the hydroforming assembly technology has several advantages. Therefore in this study, hydroforming characteristics of double layered tube was investigated. The free bulge test was performed to produce formability diagrams of double layered tubes at various forming pressure and feeding amounts. The hexagonal shape hydroforming test was also performed to estimate the dimensional accuracies of double layered tube through the corner filling ratio and the gap between inner and outer tube. Besides experimental analyses, the analytical model that can predict internal pressure for the hydroforming of double-layered tube was proposed and experimentally validated.

• Applied Science and Convergence Technology
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• v.24 no.6
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• pp.268-272
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• 2015

We report the systematic study to reduce extrinsic doping in graphene grown by chemical vapor deposition (CVD). To investigate the effect of crystallinity of graphene on the extent of the extrinsic doping, graphene samples with different levels of crystal quality: poly-crystalline and single-crystalline graphene (PCG and SCG), are employed. The graphene suspended in air is almost undoped regardless of its crystallinity, whereas graphene placed on an $SiO_2/Si$ substrate is spontaneously p-doped. The extent of p-doping from the $SiO_2$ substrate in SCG is slightly lower than that in PCG, implying that the defects in graphene play roles in charge transfer. However, after annealing treatment, both PCG and SCG are heavily p-doped due to increased interaction with the underlying substrate. Extrinsic doping dramatically decreases after annealing treatment when PCG and SCG are placed on the top of hexagonal boron nitride (h-BN) substrate, confirming that h-BN is the ideal substrate for reducing extrinsic doping in CVD graphene.

• Applied Science and Convergence Technology
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• v.24 no.6
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• pp.228-231
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• 2015

We investigated the adsorption structures and the initial growth mode of ultra-thin Al films on a W(110) surface at a high temperature. When Al atoms were adsorbed on the W(110) at the substrate temperature of 1100 K and with coverage of 0.5ML, Al atoms formed a p($2{\times}1$) double-domain structure. When the coverage was 1.0 ML, the double domain of a hexagonal structure (fcc(111) face) rotated ${\pm}5^{\circ}$ from the [100] direction of the W(110) surface and another distorted hexagonal structure were found. Low-energy electron diffraction results along with ion scattering spectroscopy results showed that the Al atoms followed the Volmer-Weber growth mode at a high temperature.