• Journal of the Korean institute of surface engineering
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• v.51 no.3
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• pp.185-190
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• 2018

Dopant-free silicon heterojunction solar cells using Transition Metal Oxide(TMO) such as Molybdenum Oxide($MoO_X$) and Vanadium Oxide($V_2O_X$) have been focused on to increase the work function of TMO in order to maximize the work function difference between TMO and n-Si for a high-efficiency solar cell. One another way to increase the work function difference is to control the silicon wafer resistivity. In this paper, dopant-free silicon heterojunction solar cells were fabricated using the wafer with the various resistivity and analyzed to understand the effect of n-Si work function. As a result, it is shown that the high passivation and junction quality when $V_2O_X$ deposited on the wafer with low work function compared to the high work function wafer, inducing the increase of higher collection probability, especially at long wavelength region. the solar cell efficiency of 15.28% was measured in low work function wafer, which is 34% higher value than the high work function solar cells.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.43.2-43.2
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• 2011

Minority Carrier recombination should be suppressed for high efficiency solar cells. However, impurities in the silicon bulk region deteriorate the minority carrier lifetimes, causes conversion efficiency drop. In this study, we introduced phosphorus external gettering for silicon heterojunction solar cell substrates. Gettering was undergone at 750, 800, 850 and $900^{\circ}C$ in furnace for 30 minutes. Bulk lifetimes and calculated diffusion length were improved. We applied phosphorus gettering to silicon heterojunction solar cells. Gettered group and ungettered group were used as substrate of silicon heterojunction solar cells. After fabrication, characteristics of solar cells were analyzed. The results were observed to see the enhancement of substrate quality which directly connects with solar cell properties.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.491.2-491.2
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• 2014

Generally, silicon heterojunction solar cell has intrinsic and n-type of hydrogenated amorphous silicon (a-Si:H) as passivation layer and BSF layer. In this study, antimony, novel material, deposited on back side of the heterojunction solar cell as passivation and BSF layer to substitute the a-Si:H and the characteristics of the solar cell such electrical properties and optical properties were analyzed. And SIMS analysis was carried out to obtain the depth profile of the BSF layer which was deposited by laser annealing process.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.492-492
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• 2014

On account of the good conductivity and optical properties, TCO is generally used in silicon heterojunction solar cell since the emitter material, hydrogenated amorphous silicon (a-Si:H), of the solar cell has low conductivity compare to the emitter of crystalline silicon solar cell. However, the work function mismatch between TCO layer and emitter leads to band-offset and interfere the injection of photo-generated carriers. In this study, work function engineering of TCO by oxygen reactive sputtering method was carried out to identify the trend of band-offset change. The open circuit voltage and short circuit current are noticeably changed by work function that effected from variation of oxygen ratio.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.209-209
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• 2012

High-efficient transparent conductive oxide (TCO) film-embedding Si heterojunction solar cells were fabricated. An additional doping was not applied for heterojunction solar cells due to the spontaneous junction formation between TCO films and an n-type Si substrate. Three different TCO coatings were formed by sputtering method for an Al-doped ZnO (AZO) film, an indium-tin-oxide (ITO) film and double stacks of ITO/AZO films. An improved crystalline ITO film was grown on an AZO template upon hetero-epitaxial growth. This double TCO films-embedding Si heterojunction solar cell provided significantly enhanced efficiency of 9.23% as compared to the single TCO/Si devices. The effective arrangement of TCO films (ITO/AZO) provides benefits of a lower front contact resistance and a smaller band offset to Si leading enhanced photovoltaic performances. This demonstrates a potential scheme of the effective TCO film-embedding heterojunction Si solar cells.

• Journal of the Semiconductor & Display Technology
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• v.19 no.2
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• pp.55-59
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• 2020

Copper Oxide (CuO) films were deposited on the n-type silicon wafer by rf magnetron sputtering for heterojunction solar cells. And then the samples were treated as a function of the annealing temperature (300-600℃) in a vacuum. Their electrical, optical and structural properties of the fabricated heterojunction solar cells were then investigated and the power conversion efficiencies (PCE) of the fabricated p-type copper oxide/n-type Si heterojunction cells were measured using solar simulator. After being treated at temperature of 500℃, the solar cells with CuO film have PCE of 0.43%, Current density of 5.37mA/㎠, Fill Factor of 39.82%.

• Journal of the Korean Institute of Telematics and Electronics
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• v.13 no.2
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• pp.23-27
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• 1976

$Si{\cdot}SnO_{2}$ heterojunction was prepared by oxidzing at oxygen atmosphere $SnO_{2-X}$ Which made by Flith evaporation of $SnO_{2}$ powder on III surface of p and n type Si single crystals. The energy band Profile of $Si{\cdot}SnO_{2}$ heterojunction was depicted from its physical properties. This heterojunction was very good rectifying junction, very sensitive in spectral response of Photovoltage at from 400nm to 1200nm, and -10$^{18}$sec of time contant. From above properties, this heterojunction was found ps good high speed photovoltaic device and solar cell.

• Solar Energy
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• v.8 no.1
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• pp.41-48
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• 1988

Heterojunction solar cells of $n-Cd_{1-x}Zn_xS/p-Si$ were fabricated by solution growth technique. The crystal structure, spectral response, surface morphology, and I-V characteristics of the $n-Cd_{1-x}Zn_xS/p-Si$ heterojunction solar cells were studied. The $Cd_{1-x}Zn_xS$ layer deposited on a silicon substrate (111) were found to be a cubic structure with the crystal orientation (111), (220) of the CdS and to be a hexagonal structure with crystal orientation (100) of the ZnS. The open-circuit voltage, short-circuit current, fill factor, and conversion efficiency of $n-Cd_{1-x}Zn_xS/p-Si$ heterojunction solar cell under $100mW/cm^2$ illumination were found to be 0.43V, 38mA. 0.76, and 12.4%, respectively.

• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.47.2-47.2
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• 2011

High-efficient transparent conductive oxide (TCO) film-embedding Si heterojunction solar cells were fabricated. An improved crystalline indium-tin-oxide (ITO) film was grown on an Al-doped ZnO (AZO) template upon hetero-epitaxial growth. This double TCO-layered Si solar cell provided significantly enhanced efficiency of 9.23 % as compared to the single TCO/Si devices. The effective arrangement of TCO films (ITO/AZO) provides a good interface, resulting in the enhanced photovoltaic performances. It discusses TCO film arrangement scheme for efficient TCO-layered heterojunction solar cells.

• Korean Chemical Engineering Research
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• v.46 no.1
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• pp.88-93
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• 2008

The bulk-heterojunction polymer solar cell based on regioregular P3HT (poly(3-hexylthiophene)) and PCBM (methanofullerene [6,6]-phenyl $C_{61}$-butyric acid methyl ester) was fabricated. Annealing effects on the crystal structure of polymer-fullerene blends as well as the UV-VIS electronic absorption spectroscopy were investigated. The correlation between the crystal organization of bulk-heterojunction film and the power conversion efficiency of solar cell was studied. Resultantly, the polymer solar cell annealed on $150^{\circ}C$ for 30 min, showed both the enhanced molecular interactions and the optimized crystal structure and displayed the power conversion efficiency of 3.2 %.