• Title/Summary/Keyword: Heavy doping

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Efficiency Improvement of $N^+NPP^+$ Si Solar Cell with High Low Junction Emitter Structure (고저 접합 에미터 구조를 갖는 $N^+NPP^+$ Si 태양전지의 효율 개선)

  • 장지근;김봉렬
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.21 no.1
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    • pp.62-70
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    • 1984
  • N+NPP+ HLEBSF (high low emitter back surface field) solar cells which have N+N high low junction in the emitter as well as N+PP+ BSF cells were designed and fabricated by using <111> oriented P type Si wafers with the resistivity of 10$\Omega$/$\textrm{cm}^2$ and the thickness of 13-15 mil. Physical parameters (impurity concentration, thickness) at each region of N+PP+ and N+NPP+ cell were made equally through same masks and simultaneous process except N region of HLEBSF cell to investigate the high low emitter junction effect for efficiency improvement. Under the light intensity of 100 mW/$\textrm{cm}^2$, total area (active area) conversion efficiency were typically 10.94% (12.16%) for N+PP+ BSF cells and 12.07% (13.41%) for N+N PP+ cells. Efficiency improvement of N+NPP+ cell which has high low emitter Junction structure is resulted from the suppression of emitter recombination current and the increasement of open circuit voltage (Voc) and short circuit current (Ish) by removing heavy doping effects occurring in N+ emitter region.

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Effect of activator types on cement mortar with polymeric aluminum chloride waste residue

  • Ping Xu;Yuhao Cui;Dong Han;Minxia Zhang;Yahong Ding
    • Advances in concrete construction
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    • v.15 no.3
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    • pp.149-159
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    • 2023
  • Water glass (WG) and sodium sulfate (SS) were used to prepare polymeric aluminum chloride residue cement mortar (PACRM) by single and compound blending with polymeric aluminum chloride waste residue, respectively. The structural strength and textural characteristics examinations showed that PACRM consistency increased by incorporating WG, but decreased by incorporating SS. When WG and SS were compounded, the mortar consistency initially rose before falling. The compressive strength of PACRM increased and then decreased as WG was increased. The mechanical properties of PACRM were better enhanced by SS than WG, showing no strength deterioration. The main reason for the improved mechanical properties of polymeric aluminum chloride waste residue in the presence of activators is the increased precipitation of reactive substances, such as C-S-H gels, calcium silica, and Ca(OH)2. The density of the specimens with PACRM and the degree of aggregation of hydration products were significantly enhanced by generating more hydration products in the mortar. Further, the cracks and pores were significantly reduced, and the matrix structure was continuous and dense at 5% SS doping and 3% compound doping.

Effect of Ancillary Ligand, Phenyl group, on the Emission Spectrum of Pt(II) Complex Useful for Organic Light-Emitting Device (유기전기발광소자에 사용될 수 있는 백금 착물에 대해 보조리간드 phenyl 기가 발광스펙트럼에 미치는 영향)

  • Lee, Seung-Hee;Lee, Ho-Joon
    • Journal of the Korean Applied Science and Technology
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    • v.25 no.2
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    • pp.265-268
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    • 2008
  • Among the efforts to increase the efficiency of organic light-emitting device (OLED), there is a way: doping phosphorescent materials. As a phosphorescent material, complexes of heavy transition metal, platinum, were synthesized. $Cl^-$ ion and phenyl group were used as ancillary ligands with 2-(2-pyridyl)benzimidazole (pbi) as a chromophore. The complexes were analysed by FAB-mass spectrometer and absorption and emission spectra were obtained. A phenyl group was able to shift the emission band of the complex even if it's not a chromorphore.

Photocatalytic Property of Nano-Structured TiO$_2$ Thermal Sprayed Coating - Part II: TiO$_2$ -WO$_3$ Coating - (나노구조 TiO$_2$용사코팅의 미세조직 제어 공정기술 개발과 광촉매 특성평가 - Part II: TiO$_2$- WO$_3$ 코팅 -)

  • 이창훈;최한신;이창희;김형준;신동우
    • Journal of Welding and Joining
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    • v.21 no.4
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    • pp.46-55
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    • 2003
  • TiO$_2$-WO$_3$(8.2wt%) coatings were prepared by the APS (Atmospheric Plasma Spraying) process to clarify the relationship between the process parameters(H$_2$ gas flow rate of plasma 2nd gas and spraying distance) of the APS coating and photo-decomposition efficiency kinetics of the MB(methylene blue) aqueous solution decomposition and to understand the effect of addition of WO$_3$ on photocatalytic properties of TiO$_2$ sprayed coating. Further, the temperature and velocity of flying particles were measured by DPV-2000 to investigate the relationship between microstructure of coatings and process parameters. Properties of coatins were investigated by XRD, SEM, XPS, RAMAN, UV/VIS spectrometer. In case of the TiO$_2$-WO$_3$(8.2wt%) coating, it had a lower anatase fraction than that of pure-TiO$_2$ coatings because of flying in the higher temperature plasma plume by the heavy weight of TiO$_2$, WO$_3$. And, when WO$_3$ added powders were spayed, the doping effects of W ions substituted into the Ti ion sites was not occured during melting and solidification cycles of spraying. It was found that the addition of WO$_3$ was ineffective effective on increasing photo-decomposition efficiency of TiO$_2$ sprayed coating.

VT-Modulation of Planar Tunnel Field-Effect Transistors with Ground-Plane under Ultrathin Body and Bottom Oxide

  • Sun, Min-Chul;Kim, Hyun Woo;Kim, Hyungjin;Kim, Sang Wan;Kim, Garam;Lee, Jong-Ho;Shin, Hyungcheol;Park, Byung-Gook
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.2
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    • pp.139-145
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    • 2014
  • Control of threshold voltage ($V_T$) by ground-plane (GP) technique for planar tunnel field-effect transistor (TFET) is studied for the first time using TCAD simulation method. Although GP technique appears to be similarly useful for the TFET as for the metal-oxide-semiconductor field-effect transistor (MOSFET), some unique behaviors such as the small controllability under weak ground doping and dependence on the dopant polarity are also observed. For $V_T$-modulation larger than 100 mV, heavy ground doping over $1{\times}10^{20}cm^{-3}$ or back biasing scheme is preferred in case of TFETs. Polarity dependence is explained with a mechanism similar to the punch-through of MOSFETs. In spite of some minor differences, this result shows that both MOSFETs and TFETs can share common $V_T$-control scheme when these devices are co-integrated.

표면변형에 따른 실리콘 태양전지의 전력변환효율 변화

  • Lee, Se-Won;O, Si-Deok;Sin, Hyeon-Uk;Jeong, Je-Myeong;Kim, Tae-Hwan;Sin, Jae-Cheol;Kim, Hyo-Jin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.387-387
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    • 2012
  • 결정 Si 및 비정질 Si 태양전지는 환경친화적이며 안정적인 물질로 전력변환 및 에너지 저장 장치에 중요하기 때문에 연구가 활발하게 진행되고 있다. 고효율 Si 태양전지를 제작하여 상용화하기에는 여러 가지 문제점이 있다. 공기와 비교하여 높은 굴절률을 갖고 있기 때문에 발생하는 반사를 줄이기 위해서 필요한 무반사 코팅층(Anti-reflective coating; ARC)은 주로 SiO2 와 SiNx 와 같은 유전체를 이용하여 사용하지만 이들 ARC 증착은 PECVD와 같은 진공장비를 사용하므로 제작 비용이 높아지는 단점이 있다. 나노선 또는 나노 팁과 같은 sub-wavelength 구조를 표면에 만들어 반사율을 줄이는 작업을 통해 ARC 공정비용을 감소하고 효율을 증진하는 연구가 활발히 진행되고 있다. CdS 양자점을 태양전지 표면에 형성함으로 ARC로 해결할 수 없는 단파장영역에 해당하는 부분을 줄이는 연구가 진행되었으며, 비정질의 경우 원기둥 형태의 태양전지 형태와 더불어 지름 방향으로의 PN 접합 나노로드 배열을 만들어 흡수면을 증가하여 효율을 증가한 연구도 진행되었다. 태양전지 표면의 형태를 V-groove 형태로 형성하여 입사하는 태양전지의 광밀도를 증가하는 이론적 결과도 발표되었다. 본 연구에서는 Si 태양전지의 표면변형에 따른 태양전지의 전력변환효율의 변화를 관찰하기 위하여 태양전지 표면의 texture 지름을 $3{\sim}15{\mu}m$, 간격을 $5{\sim}20{\mu}m$로 변화하고, 태양전지 표면의 나노 패턴을 2~10 nm 로 변화하여 반사율과 전력변환효율을 비교하였다. 나노와 마이크로 패턴은 각각 polystyrene nanosphere 와 photo mask를 이용하여 제작하였으며 PN junction Si 태양전지는 spin on dopant 방식으로 제작하여 성능을 조사하였다.

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Doping Controlled Emitter with a Transparent Conductor for Crystalline Si Solar Cells

  • Kim, Min-Geon;Kim, Hyeon-Yeop;Choe, U-Jin;Lee, Jun-Sin;Kim, Jun-Dong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.590-590
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    • 2012
  • A transparent conducting oxide (TCO) layer was applied in crystalline Si (c-Si) solar cells without use of the conventional SiNx-coating. A high quality indium-tin-oxide (ITO) layer was directly deposited on an emitter layer of a Si wafer. Three different types of emitters were formed by controlling the phosphorous diffusion condition. A light-doped emitter forming a thinner emitter junction showed an improved photoconversion efficiency of 14.1% comparing to 13.2% of a heavy-doped emitter. This was induced by lower recombination within a narrower depletion region of the light-doped emitter. In the aspect of light management, the intermediate refractive index of ITO is effective to reduce the light reflection leading the enhanced carrier generation in a Si absorber. For the electrical aspect, the ITO layer serves as an efficient electrical conductor and thus relieves the burden of high contact resistance of the light-doped emitter. Additionally, the ITO works as a buffer layer of Ag and Si and certainly prevents the shunting problem of Ag penetration into Si emitter region. It discusses an efficient design scheme of TCO-embedded emitter Si solar cells.

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Photo-catalytic Oxidation of Cyanide Complexes Associated with Heavy Metals Using UV LED and Pt-dopped TiO2 (자외선 LED와 백금으로 박막된 TiO2 광촉매를 이용한 중금속과 결합한 시안화합물의 광촉매 산화)

  • Seol, Jeong Woo;Kim, Seong Hee;Lee, Woo Chun;Cho, Hyen Goo;Kim, Soon-Oh
    • Journal of the Mineralogical Society of Korea
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    • v.28 no.1
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    • pp.29-38
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    • 2015
  • Cyanide can be leached out from the cyanidation method which has been used to extract high-purity gold and silver from ores, and it becomes a variety of cyanide complexes associated with heavy metals contained in ores. Such cyanide complexes are considered as persistent and non-degradable pollutants which cause adverse effects on humans and surrounding environments. Based on binding force between heavy metals and cyanide, cyanide complexes can be categorized weak acid dissociable (WAD) and strong acid dissociable (SAD). This study comparatively evaluated the performance of photo-catalytic process with regard to forms of cyanide complexes. In particular, both effects of UV LED wavelength and surface modification of photo-catalyst on the removal efficiency of cyanide complexes were investigated in detail. The results indicate that the performance of photo-catalytic oxidation is significantly affected by the form of cyanide complexes. In addition, the effect of UV LED wavelength on the removal efficiency was quite different between free cyanide and cyanide complexes associated with heavy metals. The results support that the surface modification of photo-catalyst, such as doping can improve overall performance of photo-catalytic oxidation of cyanide complexes.

An Improved Theoretical Model to Explain Electronic and Optical Properties of p-Type GaAs/AlGaAs Superlattices for Multi-Wavelength Normal Incidence Photodetectors

  • Kim, Byoung-Whi;Choi, Eun-Chang;Park, Kwon-Chul;Kang, Seok-Youl
    • ETRI Journal
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    • v.18 no.4
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    • pp.315-338
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    • 1997
  • We extend our previous theoretical analysis of electronic and optical properties of p-type quantum well structures based on the two heavy- and light-hole system to include all the three valence bands. These theories are then used to clarify the origin of the normal incidence absorption and photo current at photon wavelengths of 2 - 3 ${\mu}m$, which was observed in addition to the absorption around 8 ${\mu}m$ by a recent experimental investigation with heavily doped p-type GaAs/AlGaAs multi-quantum well (MQW) structures. In the theoretical analysis, the Hartree and exchange-correlation many-body interactions are taken into account within one-particle local density approximation, and it is shown that normal incidence absorption occurs in two wavelength regions over the transition energy range higher than barrier height for p-type GaAs/AlGaAs superlattices with well doping of $2{\times}10^{19}\;cm^{-3}$; one region has broad absorption peaks with coefficients of about 5000 $cm^{-1}$ around 8 ${\mu}m$, and the other has two rather sharp peaks at 2.7 ${\mu}m$ and 3.4 ${\mu}m$ with 1800 $cm^{-1}$ and 1300 $cm^{-1}$, respectively. The result indicates that the theory explains the experimental observation well, as the theoretical and experimental results are in close agreement in general absorption features.

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Fabrication of Ordered One-Dimensional Silicon Structures and Radial p-n Junction Solar Cell

  • Kim, Jae-Hyun;Baek, Seong-Ho
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.86-86
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    • 2012
  • The new approaches for silicon solar cell of new concept have been actively conducted. Especially, solar cells with wire array structured radial p-n junctions has attracted considerable attention due to the unique advantages of orthogonalizing the direction of light absorption and charge separation while allowing for improved light scattering and trapping. One-dimenstional semiconductor nano/micro structures should be fabricated for radial p-n junction solar cell. Most of silicon wire and/or pillar arrays have been fabricated by vapour-liquid-solid (VLS) growth because of its simple and cheap process. In the case of the VLS method has some weak points, that is, the incorporation of heavy metal catalysts into the growing silicon wire, the high temperature procedure. We have tried new approaches; one is electrochemical etching, the other is noble metal catalytic etching method to overcome those problems. In this talk, the silicon pillar formation will be characterized by investigating the parameters of the electrochemical etching process such as HF concentration ratio of electrolyte, current density, back contact material, temperature of the solution, and large pre-pattern size and pitch. In the noble metal catalytic etching processes, the effect of solution composition and thickness of metal catalyst on the etching rate and morphologies of silicon was investigated. Finally, radial p-n junction wire arrays were fabricated by spin on doping (phosphor), starting from chemical etched p-Si wire arrays. In/Ga eutectic metal was used for contact metal. The energy conversion efficiency of radial p-n junction solar cell is discussed.

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