• Title/Summary/Keyword: Heating film

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A calculation on the Metal-Film Mixing by Intense Pulse Ion Beam (IPIB)

  • Le, X.Y.;Yan, S.;Zhao, W.J.;Wang, Y.G.;Xue, J.M.
    • Journal of the Korean Vacuum Society
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    • v.12 no.S1
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    • pp.74-78
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    • 2003
  • In this paper, we studied, by numerical calculation, a system, which was composed of metal-film and metal-substrate irradiated by IPIB with beam ion energy 250 keV, current density 10 to 250 A/$\textrm{cm}^2$. While the IPIB irradiation was going on, an induced effect named mixing occurred. In this case, metal-film and part of metal-substrate melted and mixed. The mixing state was kept as it was in melting phase due to the fast cooling rate. Our works were simulating the heating and cooling process via our STEIPIB program and tried to find proper parameters for a specific film-substrate system, 500 nmtitanium film coated on aluminum, to get best mixing results. The parameters calculated for such Ti-Al system were compared with the experimental results and were in good accordance to the experimental results.

Influence of Magnetic Field Near the Substrate on Characteristics of ITO Film Deposited by RF Sputtering Method (기판 부근의 자기장이 RF 스퍼터링법으로 증착된 ITO 박막의 특성에 미치는 영향)

  • Kim, Hyun-Soo;Jang, Ho-Won;Kang, Jong-Yoon;Kim, Jin-Sang;Yoon, Suk-Jin;Kim, Chang-Kyo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.25 no.7
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    • pp.563-568
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    • 2012
  • Indium tin oxide (ITO) films were prepared using radio frequency (RF) magnetron sputtering method, magnets were equipped near the target in the sputter to bring the plasma near the target. The effect of magnetic field that brings the plasma near the substrate was compared with that of substrate heating. The effect of substrate heating on the grain size of the ITO thin film was larger than that of the magnetic field. However, the grain size of the ITO thin film was larger when the magnetic field was applied near the substrate during the sputtering process than when the substrate was not heated and the magnetic field was not applied. If stronger magnetic field is applied near the substrate during sputtering, it can be expected that the ITO thin film with good electrical conductivity and high transparency is obtained at low substrate temperature. When magnetic field of 90 Gauss was applied near the substrate during sputtering, the mobility of the ITO thin film increased from 15.2 $cm^2/V.s$ to 23.3 $cm^2/V.s$, whereas the sheet resistivity decreased from 7.68 ${\Omega}{\cdot}cm$ to 5.11 ${\Omega}{\cdot}cm$.

Transparent Amorphous Oxide Semiconductor as Excellent Thermoelectric Materials (비정질 산화물 반도체의 열전특성)

  • Kim, Seo-Han;Park, Cheol-Hong;Song, Pung-Geun
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2018.06a
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    • pp.52-52
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    • 2018
  • Only approximately 30% of fossil fuel energy is used; therefore, it is desirable to utilize the huge amounts of waste energy. Thermoelectric (TE) materials that convert heat into electrical power are a promising energy technology. The TE materials can be formed either as thin films or as bulk semiconductors. Generally, thin-film TE materials have low energy conversion rates due to their thinness compared to that in bulk. However, an advantage of a thin-film TE material is that the efficiency can be smartly engineered by controlling the nanostructure and composition. Especially nanostructured TE thin films are useful for mitigating heating problems in highly integrated microelectronic devices by accurately controlling the temperature. Hence, there is a rising interest in thin-film TE devices. These devices have been extensively investigated. It is demonstrated that transparent amorphous oxide semiconductors (TAOS) can be excellent thermoelectric (TE) materials, since their thermal conductivity (${\kappa}$) through a randomly disordered structure is quite low, while their electrical conductivity and carrier mobility (${\mu}$) are high, compared to crystalline semiconductors through the first-principles calculations and the various measurements for the amorphous In-Zn-O (a-IZO) thin film. The calculated phonon dispersion in a-IZO shows non-linear phonon instability, which can prevent the transport of phonon. The a-IZO was measured to have poor ${\kappa}$ and high electrical conductivity compared to crystalline $In_2O_3:Sn$ (c-ITO). These properties show that the TAOS can be an excellent thin-film transparent TE material. It is suggested that the TAOS can be employed to mitigate the heating problem in the transparent display devices.

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Effects on the Tensile Strength and Discharge Volume of the White Biodegradable Plastic film added Compatibilizer (상용화제 첨가가 화이트 바이오 생분해 플라스틱 필름의 인장강도와 토출 량과 비중에 미치는 영향)

  • Han, Jung-gu;Park, Seung Joon;Li, Fanzhu;Park, Hyung Woo
    • KOREAN JOURNAL OF PACKAGING SCIENCE & TECHNOLOGY
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    • v.27 no.3
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    • pp.169-174
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    • 2021
  • Today, plastic waste has become a critical social issue due to the increasing of plastic consumption. Korean annual per capita plastic consumption was 132 kg, the most plastic consuming country in the world. Internationally, Carbon Neutral Agreement is underway due to global warming, consumers' interest and needs for biomass-based plastics has also been increased. In this study, film was produced by adding composite use additives to the biomass-based plastics according to concentration, and the resulting changes in discharge volume, melt index, and tensile strength were investigated. Melt index (MI) was significantly higher in PLA and PBAT than in petroleum-based resin LLDPE and LDPE. Also, among the same resin or in the same treatment group, MI has been increased when the heating temperature is increased. The discharge volume and gravity of the BDP-2 to which 4% compatibilizer was added were found to be higher among all treatments, while the tensile strength of MD and TD was also higher. BDP-2 was suitable to the film producing methods for biodegradable film production.

Effect of Temperature on the Micro-scale Adhesion Behavior of Thermoplastic Polymer Film (열가소성 폴리머 필름의 마이크로 점착 거동에 대한 온도의 영향)

  • Kim, Kwang-Seop;Heo, Jung-Chul;Kim, Kyung-Woong
    • Tribology and Lubricants
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    • v.25 no.2
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    • pp.86-95
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    • 2009
  • Adhesion tests were carried out in order to investigate the effect of temperature on the adhesion behavior between a PMMA film and a fused silica lens in the micro scale. For the tests, a microtribometer system was specially designed and constructed. The pull-off forces on the PMMA film were measured under atmospheric condition as the temperature of the PMMA film was increased from 300 K to 443 K and decreased to 300 K. The contact area between the PMMA film and the lens was observed during the test. The adhesion behavior was changed with the change of the PMMA surface state as the temperature increased. In glassy state below 363 K, the pull-off force did not change with the increase of temperature. In rubbery state from 383 K to 413 K, the pull-off force increased greatly as the temperature increased. In addition, the area of contact was enlarged. In viscous state above 423 K, the fingering instability was observed in the area of contact when the PMMA film contacted with the lens. It was also found that the adhesion behavior can be varied with the thermal history of the PMMA film. The residual solvent in the PMMA film could emerge to the PMMA surface due to the heating and reduced the pull-off force.

Enhanced Electrochromic Performance by Uniform Surface Morphology of Tungsten Oxide Films (텅스텐산화물 막의 균일한 표면 형상에 의한 향상된 전기변색 성능)

  • Kim, Kue-Ho;Koo, Bon-Ryul;Ahn, Hyo-Jin
    • Korean Journal of Materials Research
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    • v.28 no.7
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    • pp.411-416
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    • 2018
  • Tungsten oxide($WO_3$) films with uniform surface morphology are fabricated using a spin-coating method for applications of electrochromic(EC) devices. To improve the EC performances of the $WO_3$ films, we control the heating rate of the annealing process to 10, 5, and $1^{\circ}C/min$. Compared to the other samples, the $WO_3$ films fabricated at a heating rate of $5^{\circ}C/min$ shows superior EC performances for transmittance modulation(49.5 %), response speeds(8.3 s in a colored state and 11.2 s in a bleached state), and coloration efficiency($37.3cm^2/C$). This performance improvement is mainly related to formation of a uniform surface morphology with increased particle size without any cracks by an optimized annealing heating rate, which improves the electrical conductivity and electrochemical activity of the $WO_3$ films. Thus, the $WO_3$ films with a uniform surface morphology prepared by the optimized annealing heating rate can be used as a potential candidate for performance improvement of the EC devices.

Formation of ultra-thin $Ta_{2}O_{5}$ film on thermal silicon nitrides (열적 성장된 실리콘 질화막위에 산화 탄탈륨 초박막의 형성)

  • 이재성;류창명;강신원;이정희;이용현
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.32A no.11
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    • pp.35-43
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    • 1995
  • To obtain high quality of $Ta_{2}O_{5}$ film, two dielectric layers of $Si_{3}N_{4}$ and $Ta_{2}O_{5}$ were subsequently formed on Si wafer. Silicon nitride films were thermally grown in 10 Torr ammonia ambient by R.F induced heating system. The thickness of thermally grown $Si_{3}N_{4}$ film was able to be controlled in the range of tens $\AA$ due to the self-limited growth property. $Ta_{2}O_{5}$ film of 200$\AA$ thickness was then deposited on the as-grown $Si_{3}N_{4}$ film about 25$\AA$ thickness by sputtering method and annealed at $900^{\circ}C$in $O_{2}$ ambient for 1hr. Stoichiometry film was prepared by the annealing in oxygen ambient. Despite the high temperature anneal process, silicon oxide layer was not grown at the interface of the layered films because of the oxidation barrier effect of Si$_{3}$N$_{4}$ film. The fabricated $Ta_{2}O_{5}$/$Si_{3}N_{4}$ film showed low leakage current less than several nA and high dielectric breakdown strength.

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Effect of the Cu Bottom Layer on the Properties of Ga Doped ZnO Thin Films

  • Kim, Dae-Il
    • Transactions on Electrical and Electronic Materials
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    • v.13 no.4
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    • pp.185-187
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    • 2012
  • Ga doped ZnO (GZO)/copper (Cu) bi-layered film was deposited on glass substrate by RF and DC magnetron sputtering and then the effect of the Cu bottom layer on the optical, electrical and structural properties of GZO films were considered. As-deposited 100 nm thick GZO films had an optical transmittance of 82% in the visible wavelength region and a sheet resistance of 4139 ${\Omega}/{\Box}$, while the GZO/Cu film had optical and electrical properties that were influenced by the Cu bottom layer. GZO films with 5 nm thick Cu film show the lower sheet resistance of 268 ${\Omega}/{\Box}$ and an optical transmittance of 65% due to increased optical absorption by the Cu metallic bottom layer. Based on the figure of merit, it can be concluded that the thin Cu bottom layer effectively increases the performance of GZO films as a transparent and conducting electrode without intentional substrate heating or a post deposition annealing process.

Thermal Behavior of Langmuir-Blodgett Film of Poly(tert-butyl methacrylate) by Principal Component Analysis Based Two-Dimensional Correlation Spectroscopy

  • Jung, Young-Mee;Kim, Seung-Bin
    • Bulletin of the Korean Chemical Society
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    • v.26 no.12
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    • pp.2027-2032
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    • 2005
  • This paper demonstrates details of thermal behavior of Langmuir-Blodgett (LB) film of poly(tert-butyl methacrylate) (PtBMA) by using the principal component analysis based two-dimensional correlation spectroscopy (PCA2D) through eigenvalue manipulating transformation (EMT). By uniformly lowering the power of a set of eigenvalues associated with the original data, the smaller eigenvalues becomes more prominent and the subtle contribution from minor components is now highlighted much more strongly than the original data. Thus, the subtle difference of thermal behavior of LB film of PtBMA from minor components, which is not readily detectable in the conventional 2D correlation analysis, is much more noticeable than the original data. PCA2D correlation spectra with EMT operation for the temperature-dependent IR spectra of LB film of PtBMA reveal the hidden property of phase transition processes during heating.

Hydrodynamic Analysis of Piston Rings (피스톤 링의 유체 윤활 해석)

  • 김재현;최상민;김경웅
    • Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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    • 1998.04a
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    • pp.167-172
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    • 1998
  • An algorithm of Thermal-elastohydrodynamic lubrication analysis for the piston ring is developed. This algorithm contains cavitation boundary condition so it automatically satisfies conservation of mass. 1-D Reynolds equation and 2-D energy equation are solved simultaneously by using Gauss-Jordan method and Newton-Raphson method. Minimum film thickness and friction force are calculated for 1 cycle. There is little difference between the results caculated by isothermal rigid and EHL analysis in entire cycle. In the results of THL, shear heating effect and temperature boundary condition affect the minimum film thickness and friction force prediction. The minimum film thickness and the friction force calculated by THL are lower than those caculated using isothermal assumption.

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