Surface characteristics of Si-doped $In_{0.1}Ga_{0.9}As$ epilayers due to Si-cell temperature
(Si이 첨가된 $In_{0.1}Ga_{0.9}As$ 에피층의 Sit셀 온도에 따른 표면특성 연구)
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- Journal of the Korean Institute of Electrical and Electronic Material Engineers
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- v.13 no.7
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- pp.551-556
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- 2000