• Applied Science and Convergence Technology
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• v.25 no.3
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• pp.51-55
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• 2016

The surface treatment of a titanium implant is investigated with a non-thermal atmospheric pressure plasma jet. The plasma jet is generated by the injection of He and $O_2$ gas mixture with a sinusoidal driving voltage of 3 kV or more and with a driving frequency of 20 kHz. The generated plasma plume has a length up to 35 mm from the jet outlet. The wettability of 4 different titanium surfaces with plasma treatments was measured by the contact angle analysis. The water contact angles were significantly reduced especially for $O_2/He$ mixture plasma, which was explained with the optical emission spectroscopy. Consequently, plasma treatment enhances wettability of the titanium surface significantly within the operation time of tens of seconds, which is practically helpful for tooth implantation.

• Journal of Welding and Joining
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• v.15 no.6
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• pp.57-65
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• 1997

A study was undertaken to determine the influence of welding variables such as shielding and plasma gases, torch standoff, travel speed and heat input, etc. on the quality of plasma arc welds in Zircaloy-4 sheet, 2mm thick. Effect of shielding gases and their flow rates on the mechanical properties of Zircaloy-4 welds by plasma arc welding were determined in terms of tensile, bardness and bend tests. The microstructure and fracture surface of Zircaloy-4 welds were investigated by optical and scanning electron microscopies. In addition, the causes of porosity and undercut in plasma arc welds of Zircaloy-4 were also investigated. Zircaloy-4 weld bead width and depth by helium shielding gas showed a wider and deeper than those by argon. It was found that Zircaloy-4 welds with shielding gas of helium did dxhibit a little smoother and uniform weld beads than those with shielding gas of argon. It was also found that the optimum gas flow rates for Zircaloy-4 welding were 0.45l/min for plasma gas with Ar and 4.5 - 6 l/min for shielding gas with He. In addition, there was no big difference in the microstructure and fracture surface of the weld metals made by either Ar shielding gas or He shielding gas.

• Membrane Journal
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• v.4 no.4
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• pp.205-212
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• 1994

Gas permeation properties of simple gases(He, $H_2,\;CO_2,\;O_2,\;N_2,\;CH_4$) through plasma-polymerized films were investigated, and the chemical structure of the plasma polymers was analyzed by infrared spectra. The plasma-polymerized films were prepared by plasma polymerization of fluorine-containing aromatic compounds, and permeation measurements were made at $35^{\circ}C$, latm. The permeability coefficient of the plasma films decreased as the size of penetrant molecules increased. The plasma polymers showed higher $CO_2/CH_4$ selectivities than those of commonly used polymers, while $O_2/N_2$ selectivities were similar of slightly lower than those of common polymers. FT-IR spectra shows that the plasma polymers contain both aromatic and aliphatic structures.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.5 no.5
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• pp.458-461
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• 2004

In order to improve the adhesion properties of copper, MPS(3-mercaptopropyltrimethoxysilane) organic film were employed. The plasma pretreatment in pure He or $He/O_{2}$ mixed gas environment greatly increased adhesion force. Adhesion force was measured by scratch test with nano indenter. Microstructures and surface roughness were observed with scanning electron microscope(SEM). The characteristics of MPS layer for pretreatment were studied with flourier transform infrared spectroscope(FT-IR) and contact angle tester. The heighest adhesion was achieved in the specimen pretreated with mixed plasma and NPS coating, which was 56mN. Other specimen showed lower value by $20{\%}$ to $30{\%}$. The roughness of substrate was not affected by the bonding strength of copper plating.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.05a
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• pp.54-54
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• 2003

MgO layer는 POP 패빌 내 유전증을 이온의 스퍼터링으로부터 보호하여 주며, 또한 높은 이차 전자 밤출 계수의 특성을 가지고 있어 구동 및 유지 전압을 낮춰 주는 역할을 한다. 그러나. MgO layer는 $H_20,{\;}CO_2,{\;}N_2,{\;}0_2$ 그리고 $H_2$와 같은 불순물 들을 쉽게 를착하는 단점이 있어, PDP의 특성 및 수명 단축에 영향을 줄 수 있다. 따라서, 본 연구에서는 atmospheric pressure plasma cleaning 과 low pressure i inductively coupled plasma (ICP) cleaning 처리에 의하여, 보호층으로 사용이 되는 MgO layer의 outgassing 특성을 조사하고자 한다. plasma cleaning에 의한 MgO layer 표면의 roughness와 불순물의 변화를 알아보기 위 하여 atomic force microscopy(AFM)과 x-ray p photoelectron spectroscopy(XPS)를 이용하여 측정 하였다. 또한, outgassing의 특성을 분석하기 위하여 MgO layer를 $400^{\circ}C$ 까지 온도를 가하여 온도에 따른 outgassing의 특성을 quadrupole mass spectrometer(QMS)를 이용하여 알아보았다. atmospheric pressure plasma cleaning 에서는 $He/O_2/Ar/N_2$의 gas를 사용하였으며, low pressure ICP cleaning 에 서는 Ar의 gas를 사용하였다. atmospheric pressure plasma cleaning는 low pressure ICP C cleaning과 비교해 더 낮은 outgassing을 관잘 할 수 있었으나. MgO 표면의 roughness는 low pressure ICP cleaning 후 더 낮은 것을 알 수 있었다. 또한 $He/O_2/Ar/N_2$의 gas를 사용 한 atmospheric pressure plasma cleaning 과 $Ar/O_2$의 gas를 사용한 ICP cleaning에서 이 차전자방출계수(SEEC)가 약 1.5~2.5배 증가된 것을 알 수 있었다.

• Journal of Electrical Engineering and Technology
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• v.11 no.2
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• pp.455-462
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• 2016

The electron transport coefficients in not only pure atoms and molecules but also in the binary gas mixtures are necessary, especially on understanding quantitatively plasma phenomena and ionized gases. Electron transport coefficients (electron drift velocity, density-normalized longitudinal diffusion coefficient, and density-normalized effective ionization coefficient) in binary mixtures of TEOS gas with buffer gases such as Kr, Xe, He, and Ne gases, therefore, was analyzed and calculated by a two-term approximation of the Boltzmann equation in the E/N range (ratio of the electric field E to the neutral number density N) of 0.1 - 1000 Td (1 Td = 10⁻¹⁷ V.cm²). These binary gas mixtures can be considered to use as the silicon sources in many industrial applications depending on mixture ratio and particular application of gas, especially on plasma assisted thin-film deposition.

• Journal of Microbiology
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• v.44 no.4
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• pp.466-471
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• 2006

In this study, we attempted to characterize the biomolecular effects of an atmospheric-pressure cold plasma (APCP) system which utilizes helium/oxygen $(He/O_2)$. APCP using $He/O_2$ generates a low level of UV while generating reactive oxygen radicals which probably serve as the primary factor in sterilization; these reactive oxygen radicals have the advantage of being capable to access the interiors of the structures of microbial cells. The damaging effects of plasma exposure on polypeptides, DNA, and enzyme proteins in the cell were assessed using biochemical methods.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.919-921
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• 1998

In Color AC Plasma Display Panel(PDP). Low luminous efficiency is a major problem. We measured luminous efficiency of PDP as a function of the Ar mixing ratio. Our results show that efficiency has improved by $5{\sim}10%$ at the condition of 0.5% Ar mixing ratio, compared with Ne-Xe(4%) or He-Ne-Xe(4%) (He:Ne = 7:3) gas.

• Bulletin of the Korean Chemical Society
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• v.15 no.8
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• pp.622-627
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• 1994

Conducting solid samples are successfully analyzed with the spark ablation combined to the moderate power (500W) Helium Microwave Induced Plasma (He MIP). The relative standard deviations are in the range of 3-10% and the detection limits are around 50 ${\mu}$g $g^-1$. These values are higher than those of Ar MIP or Ar Inductively Coupled Plasma. Spark ablated particles are examined to investigate the analytical characteristics of the system.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.51 no.3
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• pp.132-136
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• 2002

In this study, we analyzed the luminous efficiencies of Ne-Xe-Ar and He-Ne-Xe-Ar mixing gas in compared with those of Ne-Xe and He-Ne-Xe mixing gas to improve luminous efficiency by adding a small amount of Ar gas. At the Xe 4%, the brightness of Ne-Xe and He-Ne-Xe mixing gas is higher than others. As the Xe % increases, power consumption decreases. Thus, in the Ne-Xe and He-Ne-Xe mixing gas of Xe 4%, we obtained maxium luminous efficiency. The Ar concentration is varied from 0.1% to 0.7% in this study. The luminous efficiency of the Ne-Xe(4%) mixing gas is improved to 1.16 and 1.13 lm/W by adding an Ar concentration of 0.4% and 0.5%, respectively. The luminous efficiency of the He-Ne-Xe(4%) (He : Ne = 7 : 3) mixing gas is considerably improved by adding an Ar concentration of above 0.3%. The maximum luminous efficiency of this mixing gas is 1.38 lm/W at the condition of adding an Ar concentration of 0.5%.