• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.230-233
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• 2001

FeSi2/Si Layer were grown using FeSi2, Si wafer by the chemical transport reactio nmethod. The directoptical energy gap was found to be 0.871eV at 300 K. The Hall effect is a physical effect arising in matter carrying electric current inthe presence of a magnetic field. The effect is named after the American physicist E. H. Hall, who discovered it in 1879. IN this paper, we study electrical properties of FeSi2/Si layer. And then we measured Hall coefficient Hall mobility, carrier density and Hall voltage according to variation magnetic field and temperature, Because of important part for it applicationVarious phase of silicide is formed at the metal-Si interface when transition metal contacts to Si. Silicides belong to metallic or semiconducting according to their electrical and optical properties. Metallic silicides are used as gate electrodes or interconnections in VLSI devices. Semiconducting silicides can be used as a new material for IR detectors because of their narrow energy band gap.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.234-237
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• 2001

FeSi2/Si Layer were grown using FeSi2, Si wafer by the chemical transport reactio nmethod. The directoptical energy gap was found to be 0.871eV at 300 K. The Hall effect is a physical effect arising in matter carrying electric current inthe presence of a magnetic field. The effect is named after the American physicist E. H. Hall, who discovered it in 1879. IN this paper, we study electrical properties of FeSi2/Si layer. And then we measured Hall coefficient Hall mobility,carrier density and Hall voltage according to variation magnetic field and temperature, Because of important part for it applicationVarious phase of silicide is formed at the metal-Si interface when transition metal contacts to Si. Silicides belong to metallic or semiconducting according to their electrical and optical properties. Metallic silicides are used as gate electrodes or interconnections in VLSI devices. Semiconducting silicides can be used as a new material for IR detectors because of their narrow energy band gap.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11a
• /
• pp.234-237
• /
• 2001

FeSi$_2$/Si Layer were grown using FeSi$_2$, Si wafer by the chemical transport reaction method. The directoptical energy gap was found to be 0.871ev at 300 K. The Hall effect is a physical effect arising in matter carrying electric current in the presence of a magnetic field. The effect is named after the American physicist E. H. Hall, who discovered it in 1879. In this paper, we study electrical properties of FeSi$_2$/Si layer And then we measured Hall coefficient Hall mobility, carrier density and Hall voltage according to variation magnetic field and temperature, Because of important Part for it application Various phase of silicide is formed at the metal-Si interface when transition metal contacts to Si. Silicides belong to metallic or semiconducting according to their electrical and optical properties. Metallic silicides are used as gate electrodes or interconnections in VLSI devices. Semiconducting silicides can be used as a new material for IR detectors because of their narrow energy band gap.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11a
• /
• pp.230-233
• /
• 2001

FeSi$_2$ Layer were grown using FeSi$_2$, Si wafer by the chemical transport reaction method. The directoptical energy gap was found to be 0.87leV at 300 K. The Hall effect is a Physical effect arising in matter carrying electric current in the presence of a magnetic field. The effect is named after the American physicist E.H. Hall, who discovered it in 1879. In this paper, we study electrical properties of FeSi$_2$/Si layer. And then we measured Hall coefficient Hall mobility, carrier density and Hall voltage according to variation magnetic field and temperature, Because of important part for it application various phase of silicide is formed at the metal-Si interface when transition metal contacts to Si. Silicides belong to metallic or semiconducting according to their electrical and optical properties. Metallic silicides are used as gate electrodes or interconnections in VLSI devices. Semiconducting silicides can be used as a new material for IR detectors because of their narrow energy band gap.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1076-1079
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• 2001

An anolmalous magnetoresistance effect has been theoretically studied at very low temperatures for composite normal metal conductors. This anomalous behavior is due to transverse Hall currents in the composite which would result in increased losses and higher effective resistance for the composite conductor. In this paper, transverse current flow and effective resistance with Cu-Al conductor configuration were analyzed using FEM(finite element method) for predicting the Hall losses to be resulted in anomalous magnetoresistance effect. And they are plotted three dimensionally to be visualized.

• Journal of the Semiconductor & Display Technology
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• v.17 no.3
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• pp.17-20
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• 2018

IGZO thin films were prepared on n-type Si substrates to research the interface characteristics between IGZO and substrate. After the annealing processes, the depletion layer was formed at the interface to make a Schottky contact owing to the electron-hall fair recombination. The carrier density was decreased by the effect of depletion layer and the hall mobility decreased during the deposition processes. But the annealing effect of depletion layer increased the hall mobility because of the increment of potential barrier and the extension of depletion layer. It was confirmed that it is useful to observe the depletion effect and Schottky contact's properties by complementary using the Hall measurement and I-V measurement.

• Advances in materials Research
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• v.7 no.3
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• pp.203-220
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• 2018

This investigation is focused on the study of effect of hall current in transversely isotropic magneto thermoelastic homogeneous medium with fractional order heat transfer and rotation. As an application the bounding surface is subjected to normal force. The research becomes more interesting due to interaction of Hall current with the effect of rotation as it has found various applications. Laplace and Fourier transform is used for solving field equations. The analytical expressions of temperature, displacement components, stress components and current density components are computed in the transformed domain. The effects of hall current and fractional order parameter at different values are represented graphically.

• Proceedings of the IEEK Conference
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• 2002.07a
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• pp.74-77
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• 2002

In this paper we present a novel temperature compensated Hall effect power IC for accurate operation of wide temperature and high current drive of the motor coil. In order to compensate the temperature dependence of Hall sensitivity with negative temperature coefficient(TC), the differential amplifier has the gain consisted of epi-layer resistor with positive TC. The material of Hall device and epi-resistor is epi-layer with the same mobility. The variation of Hall sensitivity is -38% at 150$^{\circ}C$ and 88% at - 40$^{\circ}C$. But the operating point(B$\sub$op/) and release point(B$\sub$RP/) of the Hall power IC are within ${\pm}$25%. The experimental results show very stable and accurate performance over wide temperature range of -40$^{\circ}C$ to 125$^{\circ}C$.

• Transactions on Electrical and Electronic Materials
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• v.10 no.4
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• pp.107-110
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• 2009

In this study, the Hall effect has been studied in n-GaAs samples characterized by V/IIl growth ratios of 25, 50 and 100 and prepared by metal organic chemical vapor deposition. For the Hall effect measurements, the grown samples were cut to a size of 1${\times}$1 cm. The measurements were carried out at room temperature, using Indium contact metal at the four corners of the samples. According to the experimental results, the Schottky effect was not ovservation. Also for the n-GaAs sample of V/Ill 100 ratio the electron drift velocity was very high.

• Journal of Power System Engineering
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• v.11 no.2
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• pp.72-76
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• 2007

Since the magnetic bearing system has unstability inherently it is necessary to measure the displacement for stable operation. Normally the displacement measurement is implemented by using sensors. The sensor for the displacement measurement is selected by precision, installation space, effect of magnetic field and response speed. And the cost of displacement measurement sensor also is considered. At the cost the hall effect sensor has a large advantage comparing with the others. Therefore this study concern about the basis experimental test for the displacement measurement of the magnetic bearing system that uses the hall effect sensor coupled with a tiny permanent magnet. The experimental results confirm the validity and practicability for this displacement measurement sensor.