• 한국초전도학회:학술대회논문집
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• v.10
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• pp.41-44
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• 2000

The mixed-state Hall angle has been measured in Hg-based superconducting thin films as functions of magnetic fields (H) up to 18 T. The temperature dependence of the Hall angle shows a peak (T$^{\ast}$) at low temperature, which is consistent with a crossover point from the thermally activated flux flow (TAFF) to a critical region (CR). At low fields below 10 T, T$^{\ast}$ shifts to low temperature with increasing fields. Interestingly, however, we found that T$^{\ast}$ is independent of fields above 10 T, suggesting unusual vortex state. A physical implication of H - T$^{\ast}$ line will be discussed.

• Progress in Superconductivity
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• v.2 no.1
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• pp.39-42
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• 2000

The mixed-state Hall angle has been measured in Hg-based superconducting thin films as functions of magnetic fields (H) up to 18 T. The temperature dependence of the Hall angle shows a peak (T*) at low temperature, which is consistent with a crossover point from the thermally activated flux flow (TAFF) to a critical region (CR). At low fields below 10 T, T* shifts to low temperature with increasing fields. Interestingly, however, we found that T* is independent of fields above 10 T, suggesting unusual vortex state. A physical implication of H-T* line will be discussed.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.2023-2025
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• 2002

We have fabricated a novel vertical trench-Hall device sensitive to the magnetic field parallel to the sensor chip surface. The vertical trench-Hall device is built on SOI wafer which is produced by silicon direct bonding technology using bulk micromachining, where buried $SiO_2$ layer and surround trench define active device volume. Sensitivity up to 350 V/AT is measured.

• Journal of Power Electronics
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• v.9 no.1
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• pp.68-73
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• 2009

Automotive inverters may require current sensors for motor torque control, especially, in applications of hybrid electric vehicles or fuel cell vehicles. In this paper, to achieve a compact, integrated and low cost current sensor, a hall current sensor without magnetic core is introduced for integrating an automotive inverter. The compactness of the current sensor is possible by using integrated magnetic concentrators based on the Hall effect. Magnetic fields caused by three-phase currents are analyzed and a magnetic shield design is proposed for decoupling the cross-coupled field. It offers galvanic isolation, wide bandwidth (>100kHz), and accuracy(< 1%). Using 2D FEM analysis, its performance is demonstrated with design parameters at a U-shaped magnetic shield. The proposed coreless current sensor is tested with rated current to validate the linearity and accuracy.

• Journal of the Korean Society for Industrial and Applied Mathematics
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• v.22 no.4
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• pp.217-239
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• 2018

This paper examined the MHD and thermal behavior of unsteady mixed convection flow of a rotating fluid in a porous parallel plate channel in the presence of Hall current and heat source. The exact solutions of the concentration, energy and momentum equations are obtained. The influence of each governing parameter on non dimensional velocity, temperature, concentration, skin friction coefficient, rate of heat transfer and rate of mass transfer at the porous parallel plate channel surfaces is discussed. During the course of numerical computation, it is observed that as Hall current parameter and Soret number at the porous channel surfaces increases, the primary and secondary velocity profiles are increases while the primary and secondary skin friction coefficients are increases at the cold wall and decreases at the heated wall. In particular, it is noticed that a reverse trend in case of heat source parameter.

• Composites Research
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• v.29 no.6
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• pp.375-378
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• 2016

Characteristics of nanocrystalline materials are known substantially dependent on the microstructure such as grain size, crystal orientation, and grain boundary. Thus it is desired to have systematic characterization methods on the various nanomaterials with complex geometries, especially in low dimensional nature. One of the interested nanomaterials would be a pure two-dimensional material, graphene, with superior mechanical, thermal, and electrical properties. In this study, mechanical properties of "polycrystalline" graphene were numerically investigated by molecular dynamics simulations. Subdomains with various sizes would be generated in the polycrystalline graphene during the fabrication such as chemical vapor deposition process. The atomic models of polycrystalline graphene were generated using Voronoi tessellation method. Stress strain curves for tensile deformation were obtained for various grain sizes (5~40 nm) and their mechanical properties were determined. It was found that, as the grain size increases, Young's modulus increases showing the reverse Hall-Petch effect. However, the fracture strain decreases in the same region, while the ultimate tensile strength (UTS) rather shows slight increasing behavior. We found that the polycrystalline graphene shows the reverse Hall-Petch effect over the simulated domain of grain size (< 40 nm).

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.94-94
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• 1999

반도체 Hall 효과를 이용하여 자계를 검출하여 이를 전압신호로 출력하는 자기센서로는 주로 GaAs, InSb, InAs 등의 박막이 사용되고 있다. 자기센서의 응용분야가 최근에는 직류전류의 무접촉 검출, 자동차의 무접촉 회전 검출, 산업용 기계의 제어용 무접촉 위치검출 분야로 확대되고 있어 그 수요가 급증하고 있다. 이중 Hall 소자의 응용분야중 많은 활용이 기대되고 있는 자동차용 무접촉 센서는 -4$0^{\circ}C$~15$0^{\circ}C$의 온도범위에서 안정하게 작동하여야 하므로 온도 안정성이 매우 중요하다. 그러나 Hall 소자 시장의 80%를 점유하고 있는 InSb Hall 소자는 온도가 올라감에 따라 저항이 급격히 낮아지는 성질을 가지고 있으므로 10$0^{\circ}C$ 이상의 온도에서 사용하는 것이 불가능하다. 한편 InAs(에너지갭~0.18eV)는 InSb보다 에너지 갭이 크므로 고온에서도 작동이 가능하고 자계변화에 따른 출력의 직진성이 매우 좋다는 장점을 가지고 있다. 이러한 InAs Hall 소자를 실현하기 위해서 가장 중요한 것이 고품위의 InAs의 박막 성장기술이다. InAs 박막을 성장하기 위해서 사용되고 있는 기판은 GaAs이다. 그러나 GaAs 기판과 InAs 박막 사이에는 약 7% 정도의 격자부정합이 존재하기 때문에 높은 이동도를 가지는 고품위 박막을 성장시키기가 매우 어렵다. 이에 본 연구에서는 분자선에피택시 방법을 이용하여 GaAs 기판위에 고품위의 InAs 박막을 성장하는 기술을 연구하였으며, 성장된 InAs 박막의 특성을 DCX 및 Hall effect 등으로 조사하였다. InAs 박막 성장시 기판은 <0-1-1> 방향으로 2$^{\circ}$ off 된 GaAs(100)를 사용하였다. InAs 박막성장시 기판온도는 48$0^{\circ}C$로 하고 GaAs buffer 두께는 2000$\AA$로 하여 As flux 및 Si doping 농도등을 변화시켰다. 그 결과 Si doping 농도 2.21$\times$1017/am에서 10,952cm2/V.s의 이동도를 얻었다.

• The Journal of the Acoustical Society of Korea
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• v.24 no.1
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• pp.21-28
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• 2005

In this Paper, the effect of stage ceiling height on the acoustic characteristics of rectangular concert halls are investigated. To find out the acoustic properties of audience area, A simple Boston Symphony Hall(BSH) model which is typically rectangular shaped was applied for computer simulation. A newly built rectangular concert hall with 400 seats was also chosen for a scale model $(1.2m{\times}0.68m{\times}0.31m)$ study and its computer simulation varing the stage ceiling height and the volume. The results show that RT increased as the stage ceiling was lowered and the difference rate of RT by its variance is from -0.09 to -0.06[sec/m].

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.37 no.4
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• pp.419-424
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• 2009

A Xenon feed system has been developed for a 300 W Hall-effect thruster intended for orbit maintenance of small satellite. The system can store about 2 kg of xenon gas at 150 bar and is capable of controlling the mass flow rate of the gas at 0.5 SCCM resolution. The performance of the system is verified with a laboratory experiment. It is confirmed that the operation of the feed system is successful at a pressure level of $1.0{\times}10^{-6}$ torr in the vacuum chamber.

• Journal of Magnetics
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• v.19 no.1
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• pp.10-14
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• 2014

In this study, we fabricate an integrated microfluidic chip with a planar Hall effect (PHE) sensor for single magnetic bead detection. The PHE sensor was constructed with a junction size of $10{\mu}m{\times}10{\mu}m$ using a trilayer structure of Ta(3 nm)/NiFe(10 nm)/Cu(1.2 nm)/IrMn(10 nm)/Ta(3 nm). The sensitivity of the PHE sensor was 19.86 ${\mu}V/Oe$. A diameter of 8.18 ${\mu}m$ magnetic beads was used, of which the saturation magnetization was ~2.1 emu/g. The magnetic susceptibility ${\chi}$ of these magnetic beads was calculated to be ~0.14. The diluted magnetic beads solution was introduced to the microfluidic channel attributing a single bead flow and simultaneously the PHE sensor voltage was measured to be 0.35 ${\mu}V$. The integrated microchip was able to detect a magnetic moment of $1.98{\times}10^{-10}$ emu.