• Journal of Sensor Science and Technology
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• v.16 no.6
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• pp.419-427
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• 2007

Single crystal $ZnIn_{2}S_{4}$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $450^{\circ}C$ with the hot wall epitaxy (HWE) system by evaporating the polycrystal source of $ZnIn_{2}S_{4}$ at $610^{\circ}C$ prepared from horizontal electric furnace. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $ZnIn_{2}S_{4}$ thin films measured with Hall effect by van der Pauw method are $8.51{\times}10^{17}\;electron/cm^{-3}$, $291{\;}cm^{2}/v-s$ at 293 K, respectively. The photocurrent and the absorption spectra of $ZnIn_{2}S_{4}$/SI(Semi-Insulated) GaAs(100) are measured ranging from 293 K to 10 K. The temperature dependence of the energy band gap of the $ZnIn_{2}S_{4}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)$=2.9514 eV. ($7.24{\times}10^{-4}\;eV/K$)$T^{2}$/(T+489 K). Using the photocurrent spectra and the Hopfield quasicubic model, the crystal field energy(${\Delta}cr$) and the spin-orbit splitting energy(${\Delta}so$) for the valence band of the $ZnIn_{2}S_{4}$ have been estimated to be 167.8 meV and 14.8 meV at 10 K, respectively. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1}$-, $B_{1}$-, and $C_{41}$-exciton peaks.

• Journal of Sensor Science and Technology
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• v.16 no.6
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• pp.457-461
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• 2007

This paper describes the characteristics of poly (polycrystalline) 3C-SiC grown on $SiO_{2}$ and AlN substrates, respectively. The crystallinity and the bonding structure of poly 3C-SiC grown on each substrate were investigated according to various growth temperatures. The crystalline quality of poly 3C-SiC was improved from resulting in decrease of FWHM (full width half maximum) of XRD and FT-IR by increasing the growth temperature. The minimum growth temperature of poly 3C-SiC was $1100^{\circ}C$. The surface chemical composition and the electron mobility of poly 3C-SiC grown on each substrate were investigated by XPS and Hall Effect, respectively. The chemical compositions of surface of poly 3C-SiC films grown on $SiO_{2}$ and AlN were not different. However, their electron mobilities were $7.65{\;}cm^{2}/V.s$ and $14.8{\;}cm^{2}/V.s$, respectively. Therefore, since the electron mobility of poly 3C-SiC films grown on AlN buffer layer was two times higher than that of 3C-SiC/$SiO_{2}$, a AlN film is a suitable material, as buffer layer, for the growth of poly 3C-SiC thin films with excellent properties for M/NEMS applications.

• Nuclear Engineering and Technology
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• v.51 no.8
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• pp.1983-1990
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• 2019

Spray deposited Molybdenum trioxide (MoO₃) thin film of thickness nearly 379 nm were irradiated with 200 MeV Ag¹⁵⁺ ion beam at different fluences (Ø) of 5 ×10¹¹, 1 × 10¹², 5 × 10¹² and 1 × 10¹³ ions/㎠. The X-ray diffraction (XRD) pattern of the pristine film confirms orthorhombic structure and the crystallinity decreased after irradiation with the fluence of 5 × 10¹¹ ions/㎠ due to irradiation induced defects and became amorphous at higher fluence. In pristine film, Raman modes at 665, 820, 996 cm^-1 belong to Mo-O stretching, 286 cm^-1 belong to Mo-O bending mode and those below 200 cm^-1 are associated with lattice modes. Raman peak intensities decreased upon irradiation and vanished completely for the ion fluence of 5 ×10¹² ions/㎠. The percentage of optical transmittance of pristine film was nearly 40%, while for irradiated films it decreased significantly. Red shift was observed for both the direct and indirect band gaps. The pristine film surface had densely packed rod like structures with relatively less porosity. Surface roughness decreased significantly after irradiation. The electrical transport properties were also studied for both the pristine and irradiated films by Hall effect. The results are discussed.

• Journal of Ginseng Research
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• v.13 no.1
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• pp.24-29
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• 1989

The tumoricidal activity of marine macrophage against K562 tumor cells was studied in the presence of lipopolysaccharide(LPS) and ginseng saponin. 1 The tumoricidal activity was increased more by LPS treatment with ginseng saponin (44% in 24 hours) than by LPS only (22% in 24 hours). In the case of diol saponin, the tumoricidal activity was increased as much as 35% at concentrations of 10-3 to 1034%. Triol saponin increased the tumoricidal activity more than LPS only treatment at each concentration . 2. When total, dial and triol saponin were added to K.562 tumor cell in various concentration without macrophage, it was found that the ginseng saponin hall no tumoricidal effect. This result suggests that ginseng saponin increases the tumoricidal activity of K562 tumor celts through the tumoricidal activity of the macrophage.

• Korean Journal of Materials Research
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• v.14 no.4
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• pp.235-238
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• 2004

The LT-MBE (low temperature molecular beam epitaxy) allows to dope GaAs with Mn over its solubility limit. A 75 urn thick GaMnAs layers are grown on a low temperature grown LT-GaAs buffer layer at a substrate temperature of $260^{\circ}C$ by varying Mn contents ranged from 0.03 to 0.05. The typical growth rate for GaMnAs layer is fixed at 0.97 $\mu\textrm{m}$/h and the V/III ratio is varied from 25 to 34. The electrical and magnetic properties are investigated by Hall effect and superconducting quantum interference device(SQUID) measurements, respectively. Double crystal X-ray diffraction(DCXRD) is also performed to investigate the crystallinity of GaMnAs layers. The $T_{c}$ of the $Ga_{l-x}$ /$Mn_{x}$ As films grown by LT-MBE are enhanced from 38 K to 65 K as x increases from 0.03 into 0.05 whereas the $T_{c}$ becomes lower to 45 K when the V/III ratio increases up to 34 at the same composition of x=0.05. This means that the ferromagnetic exchange coupling between Mn-ion and a hole is affected by the growth condition of the enhanced V/III ratio in which the excess-As and As-antisite defects may be easily incorporated into GaMnAs layer.

• The Journal of the Korea Contents Association
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• v.10 no.12
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• pp.223-235
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• 2010

As the funeral service is on ritual of addressing death that is the final phase of life, it can be said to be the final stage of welfare service. It is developing into the stage of make-up, which reproduces the image of reality or expresses with the better appearance from the level of recovery technique, which restores the final form of the dead. This is caused by a request of the bereaved family with the aim of remembering the dead's final image with good looks. Methods, which are being changed by period, can be found in a record. As this funeral make-up is one field of special make-up, it is systematically made into proper application method along with the development in special materials. Thus, it will become one of the most important courses henceforth in our funeral culture available for beautifully decorating the dead's final image. In order to satisfy the request of the bereaved family, it is necessary to made floral decoration, casket cloth, and acoustic effect including the casket stage of worshipping the dead inside the funeral hall.

• Journal of Powder Materials
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• v.13 no.1 s.54
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• pp.62-67
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• 2006

Friction welding of $Al_2O_3$ particulate reinforced aluminum composites was performed and the following conclusions were drawn from the study of interfacial bonding characteristics and the relationship between experimental parameters of friction welding and interfacial bond strength. Highest bonded joint efficiency (HBJE) approaching $100\%$ was obtained from the post-brake timing, indicating that the bonding strength of the joint is close to that of the base material. For the pre-brake timing, HBJE was $65\%$. Most region of the bonded interface obtained from post-brake timing exhibited similar microstructure with the matrix or with very thin, fine-grained $Al_2O_3$ layer. This was attributed to the fact that the fine-grained $Al_2O_3$ layer forming at the bonding interface was drawn out circumferentially in this process. Joint efficiency of post-brake timing was always higher than that of pre-brake timing regardless of rotation speed employed. In order to guarantee the performance of friction welded joint similar to the efficiency of matrix, it is necessary to push out the fine-grained $Al_2O_3$ layer forming at the bonding interface circumferentially. As a result, microstructure of the bonded joint similar to that of the matrix with very thin, fine-grained $Al_2O_3$ layer can be obtained.

• Journal of the Korean Ceramic Society
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• v.50 no.6
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• pp.410-415
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• 2013

$ZrB_2$-SiC ceramics are fabricated via hot pressing with different ratios of submicron or nano-sized SiC in a $ZrB_2$-20 vol%SiC system, in order to examine the effect of the SiC size ratio on the microstructures and physical properties, such as thermal conductivity, hardness, and flexural strength, of $ZrB_2$-SiC ceramics. Five different $ZrB_2$-SiC ceramics ($ZrB_2$-20 vol%[(1-x)SiC + xnanoSiC] where x = 0.0, 0.2, 0.5, 0.8, 1.0) are prepared in this study. The mean SiC particle sizes in the sintered bodies are highly dependent on the ratio of nano-sized SiC. The thermal conductivities of the $ZrB_2$-SiC ceramics increase with the ratio of nano-sized SiC, which is consistent with the percolation behavior. In addition, the $ZrB_2$-SiC ceramics with smaller mean SiC particle sizes exhibit enhanced mechanical properties, such as hardness and flexural strength, which can be explained using the Hall-Petch relation.

• Journal of IKEEE
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• v.17 no.2
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• pp.182-188
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• 2013

Using a ceramic target ZnO:In with In doping concentration of 2%, hetero-junctions of n-ZnO:In/p-Si and p-ZnO:(In, N)/n-Si were fabricated by depositing Indium doped n - type ZnO (ZnO:In or IZO) and Indium-nitrogen co-doped p - type ZnO (ZnO:(In, N)) films on wafers of p-Si (100) and n-Si (100) by DC magnetron sputtering, respectively. These films with the best electrical and optical properties were then obtained. The micro-structural, optical and electrical properties of the n-type and p-type semiconductor thinfilms were characterized by X-ray diffraction (XRD), RBS, UV-vis; four-point probe resistance and room-temperature Hall effect measurements, respectively. Typical rectifying behaviors of p-n junction were observed by the current-voltage (I-V) measurement. It shows fairly good rectifying behavior with the fact that the ideality factor and the saturation current of diode are n=11.5, Is=1.5108.10-7 (A) for n-ZnO:In/p-Si hetero-jucntion; n=10.14, Is=3.2689.10-5 (A) for p-ZnO:(In, N)/n-Si, respectively. These results demonstrated the formation of a diode between n-type thin film and p-Si, as well as between p-type thin film and n-Si..

• The Transactions of The Korean Institute of Electrical Engineers
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• v.63 no.5
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• pp.713-718
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• 2014

DC urban railway power system consists of DC power network and AC power network. The DC power network supplies electric power to railway vehicles and the AC power network supplies electric power to station electric equipment. Recently, because of power consumption reduction and peak load shaving, intelligent measurement of regenerative energy and renewable energy adapted on DC urban railway is required. For this reason, DC smart metering system for DC power network shall be developed. Therefore, in this paper, DC voltage sensor, current sensor, and DC smart meter were developed and evaluated by performance test. DC voltage sensor was developed for measuring standard voltage range of DC urban railway, and DC current sensor was developed as hall effect split core type in order to install in existing system. DC smart meter possesses function of general intelligent electric power meter, such as measuring electricity and wireless communication etc. And, DC voltage sensor showed average 0.17% of measuring error for 2,000V/50mA, and current sensor showed average 0.21% of measuring error for ${\pm}2,000V/{\pm}4V$ in performance test. Also DC smart meter showed maximum 0.92% of measuring error for output of voltage sensor and current sensor. In similar environment for real DC power network, measuring error rate was under 0.5%. In conclusion, accuracy of DC smart metering system was confirmed by performance test, and more detailed performance will be verified by further real operation DC urban railway line test.