• Title/Summary/Keyword: Half-wavelength

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Fast Ambiguity Resolution using Galileo Multiple Frequency Carrier Phase Measurement

  • Ji, Shengyue;Chen, Wu;Zhao, Chunmei;Ding, Xiaoli;Chen, Yongqi
    • Proceedings of the Korean Institute of Navigation and Port Research Conference
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    • v.1
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    • pp.179-184
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    • 2006
  • Rapid and high-precision positioning with a Global Navigation Satellite System (GNSS) is feasible only when very precise carrier-phase observations can be used. There are two kinds of mathematical models for ambiguity resolution. The first one is based on both pseudorange and carrier phase measurements, and the observation equations are of full rank. The second one is only based on carrier phase measurement, which is a rank-defect model. Though the former is more commonly used, the latter has its own advantage, that is, ambiguity resolution will be freed from the effects of pseudorange multipath. Galileo will be operational. One of the important differences between Galileo and current GPS is that Galileo will provide signals in four frequency bands. With more carrier-phase data available, frequency combinations with long equivalent wavelength can be formed, so Galileo will provide more opportunities for fast and reliable ambiguity resolution than current GPS. This paper tries to investigate phase only fast ambiguity resolution performance with four Galileo frequencies for short baseline. Cascading Ambiguity Resolution (CAR) method with selected optimal frequency combinations and LAMBDA method are used and compared. To validate the resolution, two tests are used and compared. The first one is a ratio test. The second one is lower bound success-rate test. The simulation test results show that, with LAMBDA method, whether with ratio test or lower bound success rate validation criteria, ambiguity can be fixed in several seconds, 8 seconds at most even when 1 sigma of carrier phase noise is 12 mm. While with CAR method, at least about half minute is required even when 1 sigma of carrier phase noise is 3 mm. It shows that LAMBDA method performs obviously better than CAR method.

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Highly transparent Pt ohmic contact to InGaN / GaN blue light - emitting diodes

  • Huh, Chul;Kim, Hyun-Soo;Kim, Sang-Woo;Lee, Ji-Myon;Kim, Dong-Joon;Kim, Hyun-Min;Park, Seong-Ju
    • Journal of Korean Vacuum Science & Technology
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    • v.4 no.3
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    • pp.78-80
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    • 2000
  • We reprot on the fabrication and characterization of InGaN/GaN multiple quantum well light-emitting diode (LED) with a highly transparent Pt ohmic contact as a current spreading layer. The value of light transmittance of a Pt thin film with a thickness of 8 nm on-GaN was measured to be 85% at 450 nm. The peak wavelength and the full-width at half-maximum (FWHM) of the emission spectrum of the LED at 20 mA were 453 nm and 23 nm, respectively. Pt-contacted LEDs show good electrical properties and high light-output efficiency compared to Ni/Au-contacted ones. These results suggest that a Pt thin film can be used as an effective current spreading layer with high light-transparency.

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Measurement of electron temperature and density using Stark broadening of the coaxial focused plasma for extreme ultraviolet (EUV) lithography

  • Lee, Sung-Hee;Hong, Young-June;Choi, Eun-Ha
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.475-475
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    • 2010
  • We have generated Ar plasma in dense plasma focus device with coaxial electrodes for extreme ultraviolet (EUV) lithography and investigated an emitted visible light for electro-optical plasma diagnostics. We have applied an input voltage 4.5 kV to the capacitor bank of 1.53 uF and the diode chamber has been filled with Ar gas of pressure 8 mTorr. The inner surface of the cylindrical cathode has been attatched by an acetal insulator. Also, the anode made of tin metal. If we assumed that the focused plasma regions satisfy the local thermodynamic equilibrium (LTE) conditions, the electron temperature and density of the coaxial plasma focus could be obtained by Stark broadening of optical emission spectroscopy (OES). The Lorentzian profile for emission lines of Ar I of 426.629 nm and Ar II of 487.99 nm were measured with a visible monochromator. And the electron density has been estimated by FWHM (Full Width Half Maximum) of its profile. To find the exact value of FWHM, we observed the instrument line broadening of the monochromator with a Hg-Ar reference lamp. The electron temperature has been calculated using the two relative electron density ratios of the Stark profiles. In case of electron density, it has been observed by the Stark broadening method. This experiment result shows the temporal behavior of the electron temperature and density characteristics for the focused plasma. The EUV emission signal whose wavelength is about 6 ~ 16 nm has been detected by using a photo-detector (AXUV-100 Zr/C, IRD). The result compared the electron temperature and density with the temporal EUV signal. The electron density and temperature were observed to be $10^{16}\;cm^{-3}$ and 20 ~ 30 eV, respectively.

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Stimulated Emission with 349-nm Wavelength in GaN/AlGaN MQWs by Optical Pumping

  • Kim, Sung-Bock;Bae, Sung-Bum;Ko, Young-Ho;Kim, Dong Churl;Nam, Eun-Soo
    • Applied Science and Convergence Technology
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    • v.26 no.4
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    • pp.79-85
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    • 2017
  • The crack-free AlGaN template has been successfully grown by using selective area growth with triangular GaN facet. The triangular GaN stripe structure was obtained by vertical growth rate enhanced mode with low growth temperature of $950^{\circ}C$ and high growth pressure of 500 torr. The lateral growth rate enhanced mode of AlGaN for crack-free and flat surface was also investigated. Low pressure of 30 torr and high V/III ratio of 4400 were favorable for lateral growth of AlGaN. It was confirmed that the $4{\mu}m$ -thick $Al_{0.2}Ga_{0.8}N$ was crack-free over entire 2-inch wafer. The dislocation density of $Al_{0.2}Ga_{0.8}N$ was as low as ${\sim}7.6{\times}10^8/cm^2$ measured by cathodoluminescence. Based on the high quality AlGaN with low dislocation density, the ultraviolet laser diode epitaxy with cladding, waveguide and GaN/AlGaN multiple quantum well (MQW) was grown by metalorganic chemical vapor deposition. The stimulated emission at 349 nm with full width at half maximum of 1.8 nm from the MQW was observed through optical pumping experiment with 193 nm KrF laser. We also have fabricated the deep ridge type ultraviolet laser diode (UV-LD) with $5{\mu}m-wide$ and $700{\mu}m-long$ cavity for electrical properties. The turn on voltage was below 5 V and the resistance was ${\sim}55{\Omega}$ at applied voltage of 10 V. The amplified spontaneous emission spectrum of UV-LD was also observed from pulsed current injection.

1.3μm Waveband Al2O3/a-Si Thin-Film Etalon and Measurements of Optical Constants (1.3μm 파장 Al2O3/a-Si 박막 에탈론과 광학 상수 측정)

  • Song, H.W.;Kim, J.H.;Han, W.S.
    • Korean Journal of Optics and Photonics
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    • v.16 no.5
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    • pp.476-478
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    • 2005
  • We have fabricated a Fabry-Perot etalon around $1.3\;{\mu}m$ wavelength utilizing $Al_{2}O_3$ and a-Si thin films. A full width at half maximum of ${\sim}12.1nm$ and a finesse value of 53 were found from the measured resonant transmission spectra. Single thin film of $Al_{2}O_3$ was analyzed by spectroscopic ellipsometry. A refractive index of a-Si thin film was measured as 3.120 in the real part and 0.002 in the imaginary part, respectively. The thin-film pairs of $Al_{2}O_3$ and a-Si are applicable to output mirrors of vertical-cavity surface-emitting lasers at $1.3{\mu}m$ waveband.

Intracavity frequency doubling of a tunable Ti:Sapphire laser using a lithium triborate$(LiB_3O_5, LBO)$ crystal (Lithium Triborate$(LiB_3O_5, LBO)$ 결정을 이용한 파장가변 티타늄 사파이어 레이저의 내부공진기 진동수 배가)

  • 추한태;박차곤;김규욱
    • Korean Journal of Optics and Photonics
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    • v.12 no.2
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    • pp.143-149
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    • 2001
  • We performed the intracavity frequency-doubling of a tunable continuous-wave Ti:sapphire laser using a lithium triborate $(LiB_3O_5, LBO)$ crystal. For an efficient intracavity frequency-doubling, we measured the spectral and the angular bandwidth about the $\theta$-direction of LBO crystal. The measured values at a fundamental wavelength of 800 nm were 1.54 nm.cm and 3.8 mrad.cm, respectively. As a result of an intracavity frequency-doubling, we obtained the second-harmonic generation output power of 5.3 mW at 400 nm with the full width at half maximum(FWHM) of 0.089 nm from the fundamental output power of 185 mW at 800 nm. The frequency-doubled output was tuned from 397 nm to 403 nm.403 nm.

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Optical Monitoring of Tumors in BALB/c Nude Mice Using Optical Coherence Tomography

  • Song, Hyun-Woo;Lee, Sang-Won;Jung, Myung-Hwan;Kim, Kye Ryung;Yang, Seungkyoung;Park, Jeong Won;Jeong, Min-Sook;Jung, Moon Youn;Kim, Seunghwan
    • Journal of the Optical Society of Korea
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    • v.17 no.1
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    • pp.91-96
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    • 2013
  • We report a method for optical monitoring of tumors in an animal model using optical coherence tomography (OCT). In a spectral domain OCT system, a superluminescent diode light source with a full width of 66 nm at half maximum and peak wavelength of 950 nm was used to take images having an axial resolution of 6.8 ${\mu}m$. Cancer cells of PC-3 were cultured and inoculated into the hypodermis of auricle tissues in BALB/c nude mice. We observed tumor formation and growth at the injection region of cancer cells in vivo and obtained the images of tumor mass center and sparse circumferences. On the $5^{th}$ day from an inoculation of cancer cells, histological images of the tumor region using cross-sectional slicing and dye staining of specimens were taken in order to confirm the correlation with the high resolution OCT images. The OCT image of tumor mass compared with normal tissues was analyzed using its A-scan data so as to obtain a tissue attenuation rate which increases according to tumor growth.

A High Radiation Efficiency and Narrow Beam Width of Optical Beam Steering Using a Silicon-based Grating Structure Integrated with Distributed Bragg Reflectors (분배 브래그 반사기가 집적된 실리콘 기반 격자 구조를 이용한 광학 빔 방사 효율 및 조향 선폭 성능 향상)

  • Hong, Yoo-Seung;Cho, Jun-Hyung;Sung, Hyuk-Kee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.23 no.3
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    • pp.311-317
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    • 2019
  • We first numerically analyzed the characteristics of a silicon-based grating structure for beam steering. The analysis includes the basic principle of the grating structure according to the wavelength, peak radiation angle, radiation efficiency, and full-width at the half maximum(FWHM) of the radiation angle. Based on the analysis, we propose a silicon-based grating structure integrated with distributed Bragg reflector(DBR) to obtain a high radiation efficiency and narrow beam width simultaneously. We performed the numerical optimization of the radiation efficiency and FWHM of the radiation angle according to the DBR position. By the design optimization using the proposed grating structure compatible with the complementary metal-oxide semiconductor(CMOS) process, we achieved a maximum radiation efficiency of 87.1% and minimum FWHM of radiation angle of $4.68^{\circ}$.

Phase Error Decrease Method for Target Direction Detection Improvement (표적 방향 탐지 향상을 위한 위상 오차 감소 방법)

  • Lee, Min-Soo
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.14 no.1
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    • pp.7-13
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    • 2021
  • This paper proposes a method to minimize the target's direction detection error using RADAR. The radar system cannot accurately detect the target direction due to the phase error of he received signal. The proposed method of this study obtains a phase by applying an root mean square to each antenna incident signal, and reduces the phase error by using an optimal signal to noise ratio. In the simulation result, the probability of detecting the target direction is the best when the antenna spacing is half wavelength. The conventional method of direction detection probability 10-1.7 and the proposed method is 10-3.3. The target detection direction of the existing method represents [-8°,8°] with an error of 2 degrees. The target detection direction of the proposed method is shown in [-10°,10°], and all target directions are accurately detected. In the future, There is need for a method to reduce the phase error even though the resolution decrease.

Design and Performance Analysis of 5G Mobile Communication Array Antenna in Millimeter-Wave (mm-Wave) Band (밀리미터파(mm-Wave) 대역 5G 이동통신 Array 안테나의 설계와 성능분석 연구)

  • Lee, Sung-hun;Lee, Chang-Kyo;Park, Jae-Hong;Cho, Soo-Hyun;Choi, Seung-Ho;Kim, Tae-Hyung
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.24 no.9
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    • pp.1165-1171
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    • 2020
  • In this study, we designed a single antenna taking into account the performance, such as return loss and radiation pattern, of 28 GHz and 38 GHz array antennas for 5G mobile devices. In millimeter wave band communication, high path loss occurs between transmission and reception, unlike in conventional microwave bands. In the design of array antennas for 5G millimeter wave terminals, antenna performance such as antenna gain, bandwidth, isolation between antenna elements, side-lobe level(SLL), etc. should be further considered. The performance of the designed array antennas was analyzed by spacing the antenna elements at half a wavelength. Our results proved the validity of the design and its suitability for applications in mm-Wave by showing that the 28 GHz and 39 GHz array antennas had antenna gains of 13.5 dBi and 11.3 dBi and return losses below -18.4 dB and -20 dB, correspondingly.