• Journal of the Korean Magnetics Society
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• v.9 no.6
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• pp.271-277
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• 1999

Amorphous $Fe_{83}B_9Nb_7Cu_1$ alloy has been studied by M$\"{o}$ssbauer spectroscopy. Revised Vincze method was used and distributions of hyperfine field, isomer shift, and quadrupole line broadening of the sample at various temperatures have been evaluated and Curie temperature and $H_{hf}\;(0)$ were calculated to be 393 K and 231 kOe, respectively. Temperature variation of reduced average hyperfine field shows a flattered curvein comparison with the Brillouin curve for S=1. This behavior can be explained on the basis of Handrich molecular field model, in which the parameter Δ, which is a measure of fluctuation in exchange interactions, is assumed to have the temperature dependence ${Delta}=0.75-0.64{\tau}+0.47{\tau}^2$ where $\tau$ is $T/T_C$. At low temperature, the average hyperfine field can be fitted to $H_{hf}\;(T)=H_{hf}\;(0)\;[1-0.44\;(T/T_C)^{3/2}-0.28(T/T_C)^{5/2}-… ]$, which indicates the presence long wave length spin wave excitations. At temperature near TC, reduced average hyperfine field varies as $1.00\;[1-T/T_C]^{0.39}$. It is also found that half-width of the hyperfine field distribution was 102 kOe (3.29 mm/s) at 13 K and decreased monotonically as temperature increased. Above the Curie temperature, an average quadrupole splitting value of 0.43 mm/s was found. Average line broadening due to quadrupole splitting distribution was 0.31 mm/s at 13 K and decreases monotonically to 0.23 mm/s at 320 K, whereas that due to the isomer shift distribution is 0.1 mm/s at 13 K and 0.072 mm/s at 320 K, which is much smaller than that of both hyperfine field and quadrupole splitting. The temperature dependence of the isomer shift can be fitted within the harmonic approximation to a Deybe model with a Debye temperature ${Theta}_D=424{\pm}5K$.TEX>.

• Journal of the Korean Vacuum Society
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• v.20 no.2
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• pp.135-140
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• 2011

By investigating photoluminescence (PL) spectra (20 K) of undoped and Be-doped p-type GaSb/GaAs epilayers, the origin has been analyzed by the change due to doping density. We have observed that the PL peak shifts to higher energy and the full-width half-maximum (FWHM) decreases with increasing the doping density below ${\sim}10^{17}cm^{-3}$, contrasted to shift to low energy and increasing FWHM above the density of ${\sim}10^{17}cm^{-3}$. From the variation of the integrated PL intensities of three peaks dissolved by Gaussian fit, it has been analyzed that, as the density increases, the $Be[Be_{Ga}]$ acceptor level (0.794 eV) reduces, whereas the intrinsic defect of $A[Ga_{Sb}]$ (0.778 eV) enhances together with a new $Be^*$ level (0.787 eV) locating between A and Be. We have discussed that it is due to coexistence of the Be acceptor level (${\Delta}E=16meV$) and the complex level (${\Delta}E=23meV$), $Be^*[Ga_{Sb}-Be_{Ga}]$combined by Be and A, in Be-doped p-GaSb, and that the level density of $Be[Be_{Ga}]$ may be reduced above ${\sim}10^{17}cm^{-3}$.

• Journal of The Korean Astronomical Society
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• v.47 no.5
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• pp.167-178
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• 2014

We search for misclassified type 1 AGNs among type 2 AGNs identified with emission line flux ratios, and investigate the properties of the sample. Using 4 113 local type 2 AGNs at 0.02 < z < 0.05 selected from Sloan Digital Sky Survey Data Release 7, we detected a broad component of the $H{\alpha}$ line with a Full-Width at Half-Maximum (FWHM) ranging from 1 700 to $19090km\;s^{-1}$ for 142 objects, based on the spectral decomposition and visual inspection. The fraction of the misclassified type 1 AGNs among type 2 AGN sample is ~3.5%, implying that a large number of missing type 1 AGN population may exist. The misclassified type 1 AGNs have relatively low luminosity with a mean broad $H{\alpha}$ luminosity, log $L_{H\alpha}=40.50{\pm}0.35\;erg\;s^{-1}$, while black hole mass of the sample is comparable to that of the local black hole population, with a mean black hole mass, log $M_{BH}=6.94{\pm}0.51\;M_{\odot}$. The mean Eddington ratio of the sample is log $L_{bol}/L_{Edd}=-2.00{\pm}0.40$, indicating that black hole activity is relatively weak, hence, AGN continuum is too weak to change the host galaxy color. We find that the O III lines show significant velocity offsets, presumably due to outflows in the narrow-line region, while the velocity offset of the narrow component of the $H{\alpha}$ line is not prominent, consistent with the ionized gas kinematics of general type 1 AGN population.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.8
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• pp.950-957
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• 2012

In this paper, a small round-ended slot loaded by double ridges on the broad wall of a rectangular waveguide is presented as an element for a waveguide slot-array antenna(WSAA). By properly adjusting the ridge dimension, a resonance of the slot at a desired frequency can be achieved. The resonant length of the proposed slot is about $0.26{\lambda}_0$(free space wave length) at the resonance frequency. The proposed resonant slot has some advantageous properties, such as small size, small resonant conductance, and short and stable resonant slot length. In addition, the characteristics of the slots are slightly affected by the adjacent elements when the slots are arrayed for a waveguide slot antenna. A $4{\times}1$ WSAA with -20 dB side-lobe level(SLL) is designed, fabricated, and tested experimentally. The measured results are well agreed with the simulated ones and have an SLL of -15.9 dB and a half-power beam width of $110.2^{\circ}$ in the E-plane and $21.2^{\circ}$ in the H-plane, respectively, at 9.41 GHz.

• Journal of Biomedical Engineering Research
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• v.18 no.3
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• pp.291-299
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• 1997

As a microimaging device detecting gamma rays emitted from small lesions or tumors during operation, the intraoperative surgical probe has been proposed and is now under development. We have designed a multipurpose portable gamma prove system and evaluated the performance both for the absolute counting purpose of residual radioactivities and for the localizing capability of gamma events using the NaI(Tl) crystal and two types of photomultiplier tubes(PMTs). Counting efficiencies in the range of routine clinical use of radiation dose were measured using the assembly of single channel PMTs and 0.5 inch thick NaI(Tl) crystal of 1 inch diameter. The positioning of gamma events for imaging purpose requires the multiple channel PMTs with appropriate positioning electronics. We have designed a simple and reliable positioning circuit based on the concept of modified Anger. In preliminary experiments using the multiple channel PMT of 3 inch diameter and the dim lighth source, we were able to trace and localize the correct position with reduced positioning error by the use of two multiplier/divider chipset and simplified peripherals. The energy resolutions for the counting gamma probe measured as full width at half maximum(FWHM) for Cs-137, F-18, Tc-99m were 12%, 13%, and 36%, respectively. The spatial resolution for the imaging gamma probe measured as FWHM for green LED was 2.9 mm. The results indicate that the currently developing probe is very promising and could be very useful for many applications in nuclear medicine. Future studies will include developing collimators, improving interface hardwares, and evaluating the system with clinical data.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.1
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• pp.30-34
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• 2016

In this paper, we report that selective etching on N-polar face by EC (electro-chemical)-etching effect on the reduction of bowing and strain of FS (free-standing)-GaN substrates. We applied the EC-etching to concave and convex type of FS-GaN substrates. After the EC-etching for FS-GaN, nano porous structure was formed on N-polar face of concave and convex type of FS-GaN. Consequently, the bowing in the convex type of FS-GaN substrate was decreased but the bowing in the concave type of FS-GaN substrate was increased. Furthermore, the FWHM (full width at half maximum) of (1 0 2) reflection for the convex type of FS-GaN was significantly decreased from 601 to 259 arcsec. In the case, we confirmed that the EC-etching method was very effective to reduce the bowing in the convex type of FS-GaN and the compressive stress in N-polar face of convex type of FS-GaN was fully released by Raman measurement.

• Applied Biological Chemistry
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• v.38 no.6
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• pp.570-576
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• 1995

The new sixteen herbicidal N-2-(1-hydroxy-2-fluoroethyl)-6-substituted(X)-benzenesulfonyl-N'-4,6-dimethoxypyrimidinyl-2-yl urea derivatives(S) were synthesized and thier herbicidal activities$(pI_{50})$ in vivo against rice(Orysa Sativa L.), Barnyard grass(Echninochloa orizicola) and Bulrush(Scirpus juncoides) were measured by the pot test under paddy conditions. The structure activity relationship(SAR) were studied using the physicochemical parameters of ortho-substituents(X) and hydrolysis rate constant(logk) and herbicidal activities by the multiple regression technique. The SAR suggested that the herbicidal activities were more dependant on the hydrolysis rate constant(logk>0) than the steric constants $(Es, small width($B_4$) and length($L_1$). Among them, halogens(2 & 5), methyl(15) and non(H) substituent(1) showed higher herbicidal activity for weeds which was not tolerent to rise and weeds. The herbicidal activity was increased and the persistency in aqueous solution was decreased by electron donating(${\sigma}0<0$) groups as ortho-substituent(X). From the relationship equation between herbicidal activity and hydrolysis rate constant, it was assumed that the both reactions would be proceeds with similar process. And the conditions on the ortho substituents to show higher herbicidal activity and the persistency in aqueous solution were also discussed.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.10
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• pp.2497-2502
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• 2014

The 5 wt.% Ga-doped zinc oxide (GZO) thin films were fabricated on PES substrates with various RF power 50~80 W by using RF magnetron sputtering in order to investigate the optical and electrical properties of GZO thin films. The XRD measurement showed that GZO thin films exhibit c-axis orientation. At a RF power of 70W, the GZO thin film showed the highest (002) diffraction peak with a Full-Width-Half-Maximum (FWHM) of $0.44^{\circ}$. AFM analysis showed that the lowest surface roughness (0.20 nm) was obtained for the GZO thin film fabricated at 70 W of RF power. The electrical property indicated that the minimum resistivity ($6.93{\times}10^{-4}{\Omega}{\cdot}cm$) and maximum carrier concentration ($7.04{\times}10^{20}cm^{-3}$) and hall mobility ($12.70cm^2/Vs$) were obtained in the GZO thin film fabricated at 70W of RF power. The optical transmittance in the visible region was higher than 80 %, regardless of RF power. The optical band-gap showed the slight blue-shift with increased in carrier concentration which can be explained by the Burstein-Moss effect.

• Archives of Plastic Surgery
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• v.38 no.5
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• pp.699-702
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• 2011

Purpose: Venous stasis ulcer is the most severe form of chronic venous insufficiency and this commonly appears in the lower limb. Pharmacological therapy, reconstruction of the venous system, surgical management, cellular therapy and compression therapy are known as the treatments of venous stasis ulcer, but relapses are common, which make it a typical chronic wound. We report here on a case of recurrent venous stasis ulcer that healed with compression therapy without any other treatment. Methods: A 35-year-old man with a 13 years history of venous stasis had developed an ulcer on the distal third portion of the lower left limb which was developed 12-year before enrollment in this study. He had been treated with vacuum assist closure, 2 times of cell therapy and 3 times of skin graft for 8 years, but the lesion recurred. From November, 2008 compression therapy was done with the 3M $Coban^{TM}$ 2 Layer Compression System (3M, St. Paul, USA). The ulcer at that time was oval shaped and $3{\times}4$ cm in size. A comfort layer bandage was applied from the proximal phalanx of the great toe to the knee. A compression layer bandage was applied on the previous layer with it being overlapped one half the width of the comfort layer bandage. The dressing was changed every 4 days and the change was recorded with photography. Results: A total of 12 $Coban^{TM}$ 2 Layer Compression Systems were used. The size of the ulcer decreased to $2.5{\times}2.5$ cm in one month, to $2{\times}2$ cm in 2 months, it was $1{\times}1.8$ cm in size at 3 months and it completely healed in 4 months. Conclusion: The venous stasis ulcer was completely healed using the 3M $Coban^{TM}$ 2 Layer Compression System. This method was easy to apply, made the patient comfortable and it provided an excellent compression effect. As in the previous studies, this compression therapy has been proven to play an important role for the treatment and prevention of venous stasis ulcer.

• Journal of the Korean Vacuum Society
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• v.20 no.3
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• pp.225-232
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• 2011

Reactive ion etching (RIE) technique for maskless surface texturing of mc-silicon solar wafers has been applied and succeed in fabricating a grass-like black-silicon with an average reflectance of $4{\pm}1%$ in a wavelength range of 300~1,200 nm. In order to investigate the optimized texturing conditions for mass production of high quantum efficiency solar cell Surface characteristics such as the spatial distribution of average reflectance, micrscopic surface morphology and minority carrier lifetime were monitored for samples from saw-damaged $15.6{\times}15.6\;cm^2$ bare wafer to key-processed wafers as well as the mc-Si solar cells. We observed that RIE textured wafers reveal lower average reflectance along from center to edges by 1% and referred the origin to the non-uniform surface structures with a depth of 2 times deeper and half-maximum width of 3 times. Samples with anti-reflection coating after forming emitter layer also revealed longer minority carrier lifetime by 40% for the edge compared to wafer center due to size effects. As results, mc-Si solar cells with RIE-textured surface also revealed higher efficiency by 2% and better external quantum efficiency by 15% for edge positions with higher height.