• 제목/요약/키워드: Half Width

검색결과 919건 처리시간 0.022초

저전력 입출력을 위한 반복적인 버스반전 부호화 (Recursive Bus-Invert Coding for Low-Power I/O)

  • 정덕기;손윤식정정화
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 1998년도 추계종합학술대회 논문집
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    • pp.1081-1084
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    • 1998
  • In this paper, we propose the bus coding technique for low power consumption. For CMOS circuit most power is dissipated as dynamic power for charging and discharging node capacitances.Though the I/O and bus are likely to have the very large capacitances associated with them and dissipate much of the power dissipated by an IC, they have little beenthe special target for power reduction. The conventional Bus-Invert coding method can't decrease the peak power dissipation by 50% because the additional invert signal line can invoke a transition at the time when Bus-Invert coding isn't used to code original bus data. The proposed technique always constraints the Hamming distance between data transferred sequentially to be below the half of the bus width, and thus decrease the I/O peak power dissipation and the I/O average power dissipation.

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3차원 해석적 방법에 의한 사다리꼴 휜 해석 (Trapezoidal Fin Analysis by the 3-D Analytical Method)

  • 이성주;강형석
    • 설비공학논문집
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    • 제12권4호
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    • pp.388-397
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    • 2000
  • Comparison of the heat conduction into a trapezoidal fin and the heat loss from the fin by convection is made in this study Also, the ratio of heat loss from each surface to the total heat loss and the temperature distribution are analyzed using a 3-D analytical method. A trapezoidal fin whose tip height is half the root height is chosen as the model. The results show that the heat transfer rates from the tip and from both sides are comparable with each other as the non-dimensional width and length vary while the heat transfer rate from the bottom and top is dominant.

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다공질 규소의 라만 산란 (Raman scattering in porous silicon)

  • 조창호;김태균;서영석;나훈균;김영유
    • 한국결정성장학회지
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    • 제8권1호
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    • pp.124-130
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    • 1998
  • 양극반응 전류밀도를 변화시키면서 다공질 규소를 제작하여 라만산란을 관측하였다. 전류밀도가 증가함에 따라 라만신호는 520.5$\textrm{cm}^{-1}$에서 멀어졌으며, 봉우리의 반치폭이 증가하였다. 또한 전류밀도 증가에 따라 원통형 다공질 결정의 직경은 감소함이 계산되었으며, 길이가 길어짐을 AFM으로 관찰하였다.

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모노펄스 급전 구조를 갖는 Ka 대역 우회선 원편파 마이크로스트립 패치 배열 안테나 설계 및 제작 (Design and Fabrication of Right Hand Circular Polarization Microstrip Patch Array Antenna for Ka Band with Mono-Pulse Feed)

  • 배기형
    • 한국전자파학회:학술대회논문집
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    • 한국전자파학회 2005년도 종합학술발표회 논문집 Vol.15 No.1
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    • pp.297-302
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    • 2005
  • Right hand circularly polarized Ka band microstrip patch array antenna was designed, manufacture and measurement were carried out. In order to lower axial ratio performance sequential rotation array technique was used. With mono-pulse feed There are sum and delta channel. Waveguide to microstrip transition was used. The 512 array antenna was performed which axial ratio is about 1.ldB in the half power beam width and also 1.ldB at the normal direction. Directivity gain of designed antenna is 32dB.

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물 속에서 레이저에 의하여 생성된 기포의 거동 및 복사현상 (Bubble Behavior and Radiation for Laser-Induced Collapsing Bubble in Water)

  • 강상우;변기택;곽호영
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2004년도 추계학술대회
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    • pp.1282-1287
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    • 2004
  • The bubble behavior and the radiation mechanism from a laser-induced collapsing bubble were investigated theoretically using the Keller-Miksis equation for the bubble wall motion and analytical solutions for the vapor inside bubble. The calculated time dependent bubble radius is in good agreement with observed ones. The half-width of the luminescence pulse at the collapse point, which was calculated under assumption that the light emission mechanism is black body radiation from the vapor bubble agreed well with observed value of several nanoseconds. The gas content inside the vapor bubble was too small to produce the light emission due to bremsstrahlung.

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Optoelectrical Properties of HgCdTe Epilayers Grown by Hot Wall Epitaxy

  • Yun, Suk-Jin;Hong, Kwang-Joon
    • 센서학회지
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    • 제13권4호
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    • pp.277-281
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    • 2004
  • $Hg_{1-x}Cd_{x}Te$ (MCT) was grown by hot wall epitaxy. Prior to the MCT growth, the CdTe (111) buffer layer was grown on the GaAs substrate at the temperature of $590^{\circ}C$ for 15 min. When the thickness of the CdTe buffer layer was $5{\mu}m$ or thicker, the full width at half maximum values obtained from the x-ray rocking curves were found to significantly decrease. After a good quality CdTe buffer layer was grown, the MCT epilayers were grown on the CdTe (111)/GaAs substrate at various temperatures in situ. The crystal quality for those epilayers was investigated by means of the x-ray rocking curves and the photocurrent experiment. The photoconductor characterization for the epilayers was also measured. The energy band gap of MCT was determined from the photocurrent measurement and the x composition rates from the temperature dependence of the energy band gap were turned out.

디젤엔진 피스톤용 SCM440의 레이저 표면경화부의 잔류응력 (Residual Stress Distribution of Laser Hardened SCM440 for Diesel Engine Piston)

  • 이동석;유웅재;김재도
    • 열처리공학회지
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    • 제8권3호
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    • pp.182-186
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    • 1995
  • SCM440, which is widely used as the diesel engine piston of vessel, has been hardened by a $CO_2$ laser with the wavelength of $10.6{\mu}m$. Laser hardening experiment has been carried out for the condition of a laser power 1kW, the travel speed between 0.4 and 1.5m/min, and a rectangular-Gaussian beam. Residual stress has been measured by using middle point technique of half value width of X-ray diffraction method. It was found that the compressive residual stress with the range between 400 and 600MHz has distributed in the laser hardening zones and the tensile residual stress between 100 and 200MHz has distributed in the boundary of hardening zones.

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LARGE EDDY SIMULATION OF TURBULENT CHANNEL FLOW USING ALGEBRAIC WALL MODEL

  • MALLIK, MUHAMMAD SAIFUL ISLAM;UDDIN, MD. ASHRAF
    • Journal of the Korean Society for Industrial and Applied Mathematics
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    • 제20권1호
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    • pp.37-50
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    • 2016
  • A large eddy simulation (LES) of a turbulent channel flow is performed by using the third order low-storage Runge-Kutta method in time and second order finite difference formulation in space with staggered grid at a Reynolds number, $Re_{\tau}=590$ based on the channel half width, ${\delta}$ and wall shear velocity, $u_{\tau}$. To reduce the calculation cost of LES, algebraic wall model (AWM) is applied to approximate the near-wall region. The computation is performed in a domain of $2{\pi}{\delta}{\times}2{\delta}{\times}{\pi}{\delta}$ with $32{\times}20{\times}32$ grid points. Standard Smagorinsky model is used for subgrid-scale (SGS) modeling. Essential turbulence statistics of the flow field are computed and compared with Direct Numerical Simulation (DNS) data and LES data using no wall model. Agreements as well as discrepancies are discussed. The flow structures in the computed flow field have also been discussed and compared with LES data using no wall model.

Microscopic Spray Characteristics in the Effervescent Atomizer with Two Aerator Tubes

  • Kim, Hyung-Gon;Toshiaki Yano;Song, Kyu-Keun;Torii Shuichi
    • Journal of Mechanical Science and Technology
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    • 제18권9호
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    • pp.1661-1667
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    • 2004
  • An experimental study is performed on atomization characteristics and stable operating conditions for the injection of high viscous waste vegetable oil using an effervescent atomizer with 2 aerator tubes. Consideration is given to the effects of ALR and liquid viscosity on the velocity and mean diameter of the injected droplet. It is found that (i) as ALR increases, the axial velocity of the droplet is increased, while half-velocity width and SMD are decreased regardless of the change in liquid viscosities, (ii) the rate of fine drop distribution occupied in the total spray field is increased with an increase in ALR, and (iii) the effect of viscosity on the atomization characteristics is minor. Consequently, it is expected that the effervescent atomizer will exhibit an excellent atomization performance at the high ALR condition, regardless of liquid viscosities.

As 이온 주입된 Si의 결정성 거동에 관한 연구 (A Study of Crystalline Behaviour on $\textrm{As}^{+}$ Ion-Implanted Silicon)

  • 문영희;송영민;김종오
    • 한국재료학회지
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    • 제9권1호
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    • pp.99-103
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    • 1999
  • We investigated the crystalline behavior in active ion implanted silicon through Raman spectroscopy. Four a-Si(amorphous Si) peaks were observed that are related to the ion implantation induced a-Si layer. After the isochronical anneal(30min). and isothermal anneal($450^{\circ}C$), noticeable recovery of crystalline-Si peak at 519cm\ulcorner and peak center shift of the a-Si TO from 465cm\ulcorner to 480cm\ulcorner were observed by RNM(Random Network Model). By applying RNM and SCLM(Spatial Correlation Length Model), the peak center and FWHM(the Full Width at half Maximum) of a-Si were changed dramatically between T\ulcorner=$200^{\circ}C$ and 30$0^{\circ}C$. From the results, it can be said that there is an abrupt structural change at this temperature region.

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