• The Korean Journal of Ceramics
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• v.2 no.3
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• pp.152-156
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• 1996

Fine (~0.09 $\mu$m) $\beta$-SiC Powders with 3.3wt% of large (~0.44$\mu$m) $\alpha$-SiC of $\beta$-SiC particles (seeds) added were hotpressed at 175$0^{\circ}C$ using $Y_2O_3$, $Al_2O_3$ and CaO as sintering aids and then annealed at 185$0^{\circ}C$ for 4 h to enhance grain growth. The resultant microstructure and polytypes were analyzed by high resolution electron microscopy (HREM).Growth of $\beta$-SiC with high density of microtwins and formation of ${\alpha}/{\beta}$ composite grains consisting of $\alpha$-SiC domain sandwiched between $\beta$-SiC domains were found in both specimens. When large $\alpha$-SiC (mostly 6H) seeds were added, the $\beta$-SiC transformend preferentially to the 6H polytype. In contrast, when large $\beta$-SiC (3C) seeds were added, the fine $\beta$-SiC transformed preferentially to the 4H polytype. Such results suggested that the polytype formation in SiC was influenced by crystalline form of seeds added as well as the chemistry of sintering aids. The ${\alpha}/{\beta}$ interface played and important role in the formation of elongated grains as evidenced by presence of ${\alpha}/{\beta}$ composite grains with high aspect ratio.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.7
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• pp.687-694
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• 2006

We report on the fabrication of organic-based flexible displays using an amorphous IZO anode grown at room temperature. The IZO anode films were grown by a conventional DC reactive sputtering on the polycarbonate (PC) substrate at room temperature using a synthesized IZO target in a $Ar/O_2$ ambient. Both x-ray diffraction (XRD) and high resolution electron microscope (HREM) examination results show that the IZO anode film grown at room temperature Is complete amorphous structure due to low substrate temperature. A sheet resistance of $35.6\Omega/\Box$, average transmittance above 90 % in visible range, and root mean spare roughness of $6\sim10.5\AA$ were obtained even in the IZO anode film grown on PC substrate at room temperature. It is shown that the $Ir(ppy)_3$ doped flexible organic light emitting diode (OLED) fabricated on the IZO anode exhibit comparable current-voltage-luminance characteristics as well as external quantum efficiency and power efficiency to OLED fabricated on conventional ITO/Glass substrate. These findings indicate that the IZO anode film grown on PC substrate is a promising anode materials for the fabrication of organic based flexible displays.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.6
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• pp.299-303
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• 2002

The relationship of crystallinity between defects distribution with (100) ZnTe/GaAs using HWE growth was investigated by four crystal rocking curve (FCRC) and transmission electron microscopy (TEM). The thickness dependence of crystal quality in ZnTe epilayer was evaluated. The FWHM value shows a strong dependence on ZnTe epilayer thickness. For the films thinner than 6 ${\mu}{\textrm}{m}$, the FWHM value decreases very steeply as the thickness increases. For the films thicker than 6 ${\mu}{\textrm}{m}$, it becomes an almost constant value. At the thickness of 12 $\mu\textrm{m}$ with the smallest value of 66 arcsec. which is the best value so far reported on ZnTe epilayers was obtained. Investigation into the nature and behavior of dislocations with film thickness in (100) ZnTe/(100)GaAs heterostructures grown by Hot Wall Epitaxy (HWE). This film defects range from interface to 0.7 ${\mu}{\textrm}{m}$ thickness was high density, due to the large lattice mismatch and thermal expansion coefficients. The thickness of 0.7~1.8 ${\mu}{\textrm}{m}$ was exists low defect density. In the thicker range than 1.8 ${\mu}{\textrm}{m}$ thickness was measured hardly defects.

• Korean Journal of Crystallography
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• v.14 no.2
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• pp.79-83
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• 2003

The microstructure of bulk electrolytic MnO₂ (EMD) was studied using x-ray diffraction and transmission electron microscopy (TEM). The bulk sample showed a typical powder x-ray diffraction pattern of EMD materials. TEM study showed that the structure of EMD is present at two length scales;grains, ∼0.2 ㎛ in diameter, and ∼10 nm crystallites within the grain. The electron beam microdiffraction study revealed that each grain is an assemblage of multiphase with a common crystallographic orientation, and_that ∼50% of the crystallites are Ramsdellite, ∼30% are ε-MnO₂, and ∼15% are Pyrolusite. The ｛1120｝peak located at about 67° in powder XRD pattern as well as a high-resolution electron microscope (HREM) image of (0001) plane support the existence of ε-MnO₂ phase.

• Applied Microscopy
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• v.35 no.4
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• pp.1-9
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• 2005

In this paper it is reported that a comprehensive study of the crystal structure of the fine size S-phase ($Al_2CuMg$) precipitate in Al-Cu-Mg alloy by electron diffraction experiments. The experiments involve taking the selected area diffraction pattern for a S-phase particle, simulations of the pattern based on the kinematical diffraction theory and quantitative data collection from the zone axis diffraction patterns for the comparison with calculated diffraction intensity using both the kinematical and the dynamical diffraction theory. As a result, a good fitting model of the S-phase structure turns out to be the model reported early by X-ray methods (Perlitz & Westgren, 1943), not the new model determined by HRTEM methods (Radmilovic et al., 1999).

• Journal of the Korean institute of surface engineering
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• v.41 no.6
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• pp.301-307
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• 2008

In this paper, nanocrystallization of CuNiTiZr bulk metallic glass (BMG) subjecting to a kinetic spraying, dependent on impact velocity, was investigated by numerical and experimental approaches. The crystallization fraction and nucleation activation energy of initial feedstock and as-deposited coating were estimated by DSC and Kissinger method, respectively. The results of numerical modeling and experiment showed that the crystalline fraction and nucleation activation energy in BMG coatings were depended on kinetic energy of incident particle. Upon impact, the conversion of particle kinetic energy leads to not only decreasing free energy barrier but also increasing the driving force for an amorphous to crystalline phase transformation. The nanocrystallization of BMGs is associated with the strain energy delivered by a plastic deformation with a high strain rate.

• Applied Microscopy
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• v.45 no.3
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• pp.183-188
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• 2015

Due to the miniaturization of semiconductor devices, their crystal structure on the nanoscale must be analyzed. However, scanning electron microscope-electron backscatter diffraction (EBSD) has a limitation of resolution in nanoscale and high-resolution electron microscopy (HREM) can be used to analyze restrictive local structural information. In this study, three-dimensional (3D) automated crystal orientation and phase mapping using transmission electron microscopy (TEM) (3D TEM-EBSD) was used to identify the crystal structure relationship between an epitaxially grown CdS interfacial layer and a $Cu(In_xGa_{x-1})Se_2$ (CIGS) solar cell layer. The 3D TEM-EBSD technique clearly defined the crystal orientation and phase of the epitaxially grown layers, making it useful for establishing the growth mechanism of functional nano-materials.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.226-226
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• 2010

Microstructure, magnetic and transport properties of as-deposited electron-doped $La_{1-x}Ce_xMnO_3$ and hole-doped $La_{1-x}Ce_xMnO_3$ films prepared by pulse laser deposition, with x = 0.1 and 0.3, have been investigated. The microstructural analysis reveals that the $La_{1-x}Ce_xMnO_3$ films have a column-like microstructure and a strip-domain phase with a periodic spacing of about 3c, which were not found for the $La_{1-x}Ce_xMnO_3$ ones. At the same time, the experimental results manifest that there is no fundamental difference in the magnetic and the transport properties between electron- and hole-doped manganite films, except the appearance of ferromagnetic response in the low-doped $La_{0.9}Ce_{0.1}MnO_3$ film at temperatures above the Curie point. The observed magnetic behavior, typical for the Griffiths-like phase, for this film is explained by the percolation mechanism of the ferromagnetic transition and by the presence of strip-domain phase which stimulates the magnetic phase separation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.64-64
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• 2008

연속공정이 가능한 Roll to Roll sputter system을 이용하여 플렉시블 indium tin oxide(ITO) 투명전극을 PET(polyethlyene terephthalate) 기판위에 성막하였다. 연속 성막공정을 위해 Roll to Roll sputter system에서의 unwinder roller와 rewinder roller를 이용한 servomotor의 rolling으로 기판의 움직임이 완벽히 제어되었으며, 외부 응력으로 부터의 안정성 및 성막 공정 시의 PET 기판의 열적 변형을 최소화하기 위한 접촉식 냉각방식의 cooling system을 main drum으로 사용하였다. 또한 고분자 기판과 투명전극 사이의 adhesion을 향상시키기 위한 전처리 공정으로 gridless linear ion beam source를 pretreatment system으로 구축하였다. 이렇게 제작된 Roll to Roll sputter system을 이용하여 PET 기판위에 연속공정을 통해 ITO 투명전극을 성막하였다. 성막된 플렉시블 ITO/PET 투명전극은 XRD, HREM, SEM 분석을 통하여 main drum의 cooling에 의해 완전한 비정질 구조를 나타내었음을 확인할 수 있었으며, 비록 Roll to Roll sputter system을 통하여 상온에서 성막 되었음에도 불구하고 최적화 된 조건에서 가시광선 영역 83.46 %의 높은 광투과도 값과 47.4 Ohm/square의 비교적 낮은 먼저항 값을 얻을 수 있었다. 또한 Bending test 결과를 통하여 ion source의 전처리 공정으로 굽힘/평의 반복적 응력에 따른 전기적 특성 열화를 최소화 할 수 있음을 보였다. 최적화된 플렉시블 투명전극을 이용하여 P3HT:PCBM 기반의 플렉시블 유기태양전지를 제작하였으며, 제작된 유기태양전지로부터 1.88%의 power conversion efficiency (PCE)을 확보함으로써 플렉시블 유기태양전지 제작을 위한 ITO/PET 투명전극 성막 공법으로써 Roll to Roll sputter system의 적용가능성을 확인할 수 있었다.

• Korean Journal of Materials Research
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• v.9 no.5
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• pp.528-532
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• 1999

Y$_2$O$_3$films were grown on SiO$_2$-covered Si(111), and hydrogen-terminated Si(111), and hydrogen-terminated Si(111) substrates at 50$0^{\circ}C$ by ultrahigh vacuum ionized cluster beam deposition (UHV-ICB). The microstructures and growth behavior of these films have been investigated by transmission electron diffraction (TED) and high-resolution transmission electron microscopy(HREM). The TED results show that the $Y_2$O$_3$grown on the SiO$_2$-Si has the epitaxial relationship of (11-1)Y$_2$O$_3$∥(111)Si and [-110]Y$_2$O$_3$∥[-110]Si. The film on the H-Si substrate contains YS\ulcorner and amorphous YSi\ulcornerO\ulcorner layers at the interface, having the orientation relationship each other. For the YSi\ulcorner and the Si substrate, the relationship is (0001)YSi\ulcorner∥(111)Si and [1-210]YSi\ulcorner∥∥[-110]Si. For the $Y_2$O$_3$and the YSi\ulcorner ; the relationship is as follows: (11-1)Y$_2$O$_3$∥(0001)YSi\ulcorner and [-110]Y$_2$O$_3$∥[1-210]YSi\ulcorner(111)Y$_2$O$_3$∥(0001)YSi\ulcorner and [-110]Y$_2$O$_3$∥[1-210]YSi\ulcorner. Explanation is given to describe the formation mechanisms of the interfacial phases of SiO\ulcorner, YSi\ulcornerO\ulcorner and YSi\ulcorner. It is shown that the crystallinity of the $Y_2$O$_3$film on the SiO$_2$-Si(111) is better than that of $Y_2$O$_3$on H-Si(111).