• Korean Journal of Metals and Materials
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• v.49 no.4
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• pp.313-320
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• 2011

100 nm-thick hydrogenated amorphous silicon $({\alpha}-Si:H)$ films were deposited on a glass and glass/30 nm Ni substrates by inductively-coupled plasma chemical vapor deposition (ICP-CVD) at temperatures ranging from 100 to $550^{\circ}C$. The sheet resistance, microstructure, phase transformation and surface roughness of the films were characterized using a four-point probe, AFM (atomic force microscope), TEM (transmission electron microscope), AES (Auger electron spectroscopy), HR-XRD(high resolution X-ray diffraction), and micro-Raman spectroscopy. A nano-thick NiSi phase was formed at substrate temperatures >$400^{\circ}C$. AFM confirmed that the surface roughness did not change as the substrate temperature increased, but it increased abruptly to 6.6 nm above $400^{\circ}C$ on the glass/30 nm Ni substrates. HR-XRD and micro-Raman spectroscopy showed that all the Si samples were amorphous on the glass substrates, whereas crystalline silicon appeared at $550^{\circ}C$ on the glass/30 nm Ni substrates. These results show that crystalline NiSi and Si can be prepared simultaneously on Ni-inserted substrates.

• Journal of the Korea Institute of Building Construction
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• v.24 no.3
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• pp.285-295
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• 2024

This study investigated the impact of accelerated carbonation on Ordinary Portland Cement(OPC) paste that had undergone steam curing at 500℃·hr. Two carbonation environments were examined: atmospheric carbonation(1atm, 20% CO₂) and pressurized carbonation(5atm, 99% CO₂). Chemical analysis using X-ray diffraction(XRD) and Fourier-Transform Infrared spectroscopy(FT-IR) were conducted, along with physical characterization via scanning electron microscopy(SEM) and compressive strength testing. Results indicated that atmospheric carbonation with 20% CO₂ concentration significantly densified the internal microstructure of the OPC paste, leading to enhanced compressive strength. Conversely, pressurized carbonation at 5atm with 99% CO₂ concentration resulted in rapid densification of the surface structure, which hindered CO₂ diffusion into the sample. This limited the extent of carbonation and prevented the improvement of physical properties.

• Korean Journal of Materials Research
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• v.11 no.9
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• pp.733-739
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• 2001

In Al-25Nb binary system, it was observed only formation of $D0_{22}$ $Al_3Nb$ intermetallic compound after 5hr milling but it was not observed formation of meta stable phase like L1$_2$ phase. In this state, $D0_{22}$ $Al_3Nb$ fabricated had nano sized grain of approximately 20nm. Ternary systems, transition metals such as Cr, Cu, Fe, Mn were added 6~12at.% as substitution of Al, showed formation of $D0_{22}$ $Al_3Nb$ like Al-25Nb binary system. In Al- l2Cu-25Nb system, it was observed that broad XRD pattern like amorphization of Al and not observed formation of $D0_{22}$ $Al_3Nb$ after 5hr milling. But there was mixed phase of a lot of amorphous Al and little $D0_{22}$ $Al_3Nb$ through TEM. In the states of unalloyed, 5~7hr milling time, those showed exothermic reaction at 35$0^{\circ}C$, which was formation of $D0_{22}$ $Al_3Nb$ like Al-25Nb binary system. With increasing milling time to 10hr, $D0_{22}$ $Al_3Nb$ was transformed to mixed phase of amorphous and nanocryatlline, having approximately 10nm grain but the meta stable $Al_3Nb$ was not fabricated by adding transition metals.

• Journal of the Korean institute of surface engineering
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• v.33 no.2
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• pp.93-100
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• 2000

Effects of Ti content and Ti underlayer on the pitting behavior of TiN coated AISI 304 stainless steel have been studied. The stainless steel containing 0.1~1.0wt% Ti were melted with a vacuum melting furnace and heat treated at $1050^{\circ}C$ for 1hr for solutionization. The specimen were coated with l$\mu\textrm{m}$ and 2$\mu\textrm{m}$ thickness of Ti and TiN by E-beam PVD method. The microstructure and phase analysis were conducted by using XRD, XPS and SEM with these specimen. XRD patterns shows that in TiN single-layer only the TiN (111) Peak is major and the other peaks are very weak, but in Ti/TiN double-layer TiN (220) and TiN (200) peaks are developed. It is observed that the surface of coating is covered with titanium oxide (TiO$_2$) and titanium oxynitride ($TiO_2$N) as well as TiN. Corrosion potential on the anodic polarization curve measured in HCl solution increase in proportion to the Ti content of substrate and by a presence of the Ti underlayer, whereas corrosion and passivation current densities are not affected by either of them. The number and size of pits decrease with increasing Ti content and a presence of the coated Ti film as underlayer in the TiN coated stainless steel.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.3
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• pp.278-283
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• 1995

The potassium titanate fibres were synthesized with wet process by the addition of KOH solution to the TiOz gel produced by the reaction between element titanium particles and $H_2O_2$ solution at $50^{\circ}C$. And then they were characterized by XRD, SEM and FT - IR. It was found that potassium titanate fibres were mainly affected by KOH/TiOz mole ratio, synthesis time and aging time in this wet process employed. For $KOH/TiO_2 = 1/1$, synthesizing time 24 hrs, aging time 24 hrs and calcination temperature of TEX>$900^{\circ}C$ for 1 hr, their products were mainly found to be potassium tetratitanate which had thin and long fibres in the range of 10 ~ 20 mm. As the synthesizing time increased and the amount of KOH decreased, potassium tetratitanate was converted into potassium hexatitanate. Also, the length of their fibres became short.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.2
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• pp.87-93
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• 1995

Strontium titanate single crystal was grown by floating wne method. Growth conditions are as follows; at air atmosphere, rotation rate of upper and lower shafts were 20 - 25 rpm, 15 - 20 rpm respectively and growth rate was 3 mmlhr. As grown crystal was light brown color and transparent. After annealing, color was faded away. Growth direction was [112] direction and it was confirmed that grown crystal has $SrTiO_3$single phase and stoichiometric composition by XRD and EDS. Etch pit pattern was investigated after chemical etching in $350^{\circ}C$, KOH solution for 5 min and dielectric constant was measured at the range of room temperature ~ $350^{\circ}C$ .

• Korean Journal of Crystallography
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• v.8 no.2
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• pp.81-88
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• 1997

We investigated the CVPE grown of GaN thin films on (0001) sapphire using the $GaCl_3$ and $NH_3$ as source gases. The growth temperatures are ranged 970 to $1040^{\circ}C$ with the various flow rate ratio of source gases. The nitridation treatment was performed using the $NH_3$ gas before the GaN deposition. The optimal growth conditions were determined to be; growth temperature of $1040^{\circ}C$, III/V flow rate ratio of 2, nitridation time of 3 min. The FWHM at the (0002) peak from the XRD analysis was shown to be 0.32 deg. for the sample grown under those conditions. The growth rate was about $40{\mu}m/hr$ at $1040^{\circ}C$.

• Analytical Science and Technology
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• v.10 no.1
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• pp.18-30
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• 1997

Na, TPA-ZSM-5 with Si / Al mole ratio of about 130 was synthesized at low temperature and atmospheric pressure. These intermediate products were characterized by using XRD, XRF, FT-IR, NMR, and SEM. As a result, intermediate product were different from those that synthesized by autoclave method but spectroscopic characteristics of the final products showed to be in the typical ZSM-5 region. The defect sites were observed in the final product and removed by calcination at $540^{\circ}C$. Na, TPA-ZSM-5, aboveall, was synthesized at this condition within 48hr.

• Korean Chemical Engineering Research
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• v.55 no.3
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• pp.401-408
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• 2017

In preparation of self-repairing polymer-modified waterproofing asphalt-montmorillonite (MMT) composite, silylation-modification characteristics of cation ($Na^+$) exchanged K-10 (Na-MMT-K) using 3-aminopropyltriethoxysilane (APS) were studied and the optimal conditions of its silylation-modification process were proposed by use of the results of XRD analysis on silylation-modified Na-MMT-K (S-Na-MMT-K) under various conditions. According to XRD results, it was confirmed that peaks of Na-MMT-K were simultaneously consistent with those of K-10 and natural or Ca-MMT modified Na-MMT. Similarly, S-Na-MMT-K was observed to have two basal spacings ($d_{001}$), among which the area-ratio of a secondary (001) peak ($2{\theta}=3.9{\sim}4.2^{\circ}$) to a primary (001) peak ($2{\theta}{\sim}8.838^{\circ}$) was suggested to be a criterion to represent a degree of APS silylation-modification. Then, the optimal conditions on APS-stirring period prior to APS-MMT reaction, APS-MMT reaction period, APS concentration and reaction temperature at the highest area-ratio were turned out to be 20 min, 2~3 hr, 7.5 w/v% and $50^{\circ}C$, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.10
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• pp.901-906
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• 2006

The transparent conductive oxide(TCO) has been used in necessity as front electrode for increasing efficiency of LED. In our paper, aluminium-doped zinc oxide films(AZO), which has transparent conducting were prepared with RF magnetron sputtering system on glass substrate(corning 1737) and annealed at $400^{\circ}C$ for 2 hr in vacuum ambient and $600^{\circ}C$ for 2hr with $O_2$ ambient respectively. The smooth AZO films were etched in diluted HCL(0.5 %) to examine the surface properties, which in ambient post-annealing process. We confirmed that the electric, structural and optical properties of textured AZO thin films, which implemented using the methods of XRD, FWHM, AFM and Hall measurement. The properties of textured AZO thin films especially depended on the ambient post-annealing process. We presumed that the change of transmittances as R G B LED and the ambient post-annealing process will be increasing the efficiency of LED.