• Proceedings of the Korean Ceranic Society Conference
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• 2000.10a
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• pp.58.2-58
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• 2000

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.365-368
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• 2002

WSW(Wrap Side Wall) is proposed to decrease junction electric field in this paper. WSW process is fabricated after first gate etch, followed NMI ion implantation and deposition & etch nitride layer New WSW structure has buffer layer to decrease electric field. Also we compared the hot carrier characteristics of WSW and conventional. Also, we design a test pattern including pulse generator, level shifter and frequency divider, so that we can evaluate AC hot carrier degradation on-chip.

• Proceedings of the KIPE Conference
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• 2015.07a
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• pp.103-104
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• 2015

Solar energy has proven to be a potential clean energy source to help offset the large consumption of fossil. Nowadays, many research projects aim to enhance photovoltaic (PV) system performance and functionality. This research focuses on integrating self-monitor capability into dc-dc converters that control PV panels to detect a fault in series-connected PV cells, called hot spotting. A detection method using ac parameter characterization is proposed and its operation is examined through simulation.

• Proceedings of the KIPE Conference
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• 2018.11a
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• pp.177-178
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• 2018

본 논문에서는 직렬형 Hot-Swap ESS(Energy Storage System)를 구성하는 전력 변환 시스템에서 전류 센서의 옵셋 오차가 제어 성능에 미치는 영향에 대해 살펴보았다. 양방향 DC-DC 컨버터와 DC-AC 인버터에서 전류 센서 옵셋 오차의 영향에 대해 분석하고, 컴퓨터 모의 시험을 진행하여 그 특성을 파악하였다.

• Proceedings of the KIEE Conference
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• 2005.07b
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• pp.1364-1367
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• 2005

In this paper, a novel prototype topology of soft switching PWM controlled high frequency AC power conversion circuit without DC voltage smoothing chemical capacitor filter link from the voltage grid of utility frequency AC power supply source with 60Hz-100V or 60Hz-200V is proposed and introduced for innovative consumer induction heating(IH) boiler applications as hot water producer, steamer and super heated vapor steamer.

• Journal of the Korea Society for Simulation
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• v.17 no.2
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• pp.13-19
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• 2008

New Buffered deposition is proposed to decrease junction electric field in this paper. Buffered deposition process is fabricated after first gate etch, followed NM1 ion implantation and deposition & etch nitride layer. New Buffered deposition structure has buffer layer to decrease electric field. Also we compared the hot carrier characteristics of Buffered deposition and conventional. Also, we design a test pattern including NMOSFET, PMOSFET, LvtNMOS, High pressure N/PMOSFET, so that we can evaluate DC/AC hot carrier degradation on-chip. As a result, we obtained 10 years hot carrier life time satisfaction.

• Proceedings of the Korean Nuclear Society Conference
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• 1995.10a
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• pp.230-234
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• 1995

The loss of offsite power test was successfully performed on YGN 4 to demonstrate that the reactor can be shutdown and the RCS can be maintained in a hot standby condition following a loss of all offsite Alternating Current (AC) power. Following the loss of main generator and all offsite AC power, the ensile emergency diesel generators were automatically started and the plant was stabilized via natural circulation. Plant conditions were maintained in hot standby for at least 30 minutes before offsite power was restored. Thus, the capability of equipment, controls and instrumentation necessary to remove decay heat from the core using only ensile emergency power was demonstrated, thereby satisfying all objectives and acceptance criteria of the test.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.7
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• pp.780-790
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• 1988

We have studied the hot-carrier-induced degradation caused by the high channel electric field due to the decrease of the gate length of MOSFET used in VLSI. Under DC stress, the condition in which maximum substrate current occures gave the worst degradation. Under AC dynamic stress, other conditions, the pulse shape and the falling rate, gave enormous effects on the degradation phenomena, especially at 77K. Threshold voltage, transconductance, channel conductance and gate current were measured and compared under various stress conditions. The threshold voltage was almost completely recovered by hot-injection stress as a reverse-stress. But, the transconductance was rapidly degraded under hot-hole injection and recovered by sequential hot-electron stress. The Si-SiO2 interface state density was analyzed by a charge pumping technique and the charge pumping current showed the same trend as the threshold voltage shift in degradation process.

• Korean Chemical Engineering Research
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• v.59 no.1
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• pp.77-84
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• 2021

To control hot spot in a plug flow reactor (PFR) is important for the yield and purity of products and safety. In this paper, coolant temperature is set as a state variable, and radial distributions of heat and mass are considered to model the PFR more realistic than without considering radial distributions. The model consists of three state variables, reactant concentration, reactant temperature, and the coolant temperature. The flow rate of the isothermal coolant is a manipulated variable. This paper shows that the controller considering the radial distributions of heat and mass is more effective than the controller without them. Assuming that u3,0 is 0.7, the suggested control equation was robust when St is bigger than 1.3, and Ac/A is smaller than 2.0. Under this condition, the hot spot temperature changed within the relative error of one percent when the temperature of input altered within the range of five percent.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.12
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• pp.1070-1078
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• 1998

A density of phonon is increased by application of electric field. At this time the phonon which has higher energy than around is called hot phonon is disappeared after 7 picosecond by scattering with electron and loss energy. Since the lifetime of phonon is very short, the effects of hot phonon can be neglected in the low speed semiconductor device, but it must be considered in high speed devices. DC and AC electric fields are applied to bulk GaAs, and the density of phonon is obtained and analyzed for its effects on electron velocity and electron distribution using Monte Carlo simulation method. Under high electric filed the density of hot phonon increased and energy of hot phonon is decreased by scattering with electron on the other hand the energy of electron is increased. Therefore electron move from central valley of conduntion band to satellite vallies and the valocity of electron decrease since the mass of electron in satellite vally is heavier than central vally. In millimeter wave frequencies, the effects of hot phonon increased at higher frequencies.