• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1997.04a
• /
• pp.236-238
• /
• 1997

A cellular power amplifier using an APCVD(Atmospheric Pressure Chemical Vapor Deposition)-grown SiGe base HBT of ETRI has been designed with a linear simulation CAD. The Si/SiGe HBT with an emitter area of 2$\times$8${\mu}{\textrm}{m}$$^2$typically has a cutoff frequency(f$_{T}$) of 7.0 GHz and a maximum oscillation frequency(f$_{max}$) of 16.1 GHz with a pad de-embedding A packaged power Si/SiGe HBT with an emitter area of 2$\times$8$\times$80${\mu}{\textrm}{m}$$^2$typically shows a f$_{T}$ of 4.7 GHz and a f$_{max}$ of 7.1 GHz at a collector current (Ic) of 115 mA. The power amplifier exhibits a Forward transmission coefficient(S21) of 13.5 dB, an input and an output reflection coefficients of -42 dB and -45 dB respectively. Up to now the III-V compound semiconductor devices hale dominated microwave applications, however a rapid progress in Si-based technology make the advent of the Si/SiGe HBT which is promising in low to even higher microwave range because of lower cost and relatively higher reproducibility of a Si-based process.ess.ess.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.31A no.9
• /
• pp.104-113
• /
• 1994

We have fabricated n-p-n HBTs using 3-inchAlgaAs/GaAs hetero structure epi-wafers grown by MBE. DC and AC characteristics of HBT devices were measured and analyzed. For HBT epi-structure, Al composition of emitter was graded in the region between emitter cap and emitter. And base layer was designed with concentration of 1${\times}10^{19}/cm^{3}$ and thickness of 50nm, and Be was used as the p-type dopant. Principal processes for device fabrication consist of photolithography using i-line stepper, wet mesa etching, and lift-off of each ohmic metal. The PECVD SiN film was used as the inslator for the metal interconnection. HBT device with emitter size of 3${\times}10{\mu}m^{2}$ resulted in cut-off frequency of 35GHz, maximum oscillation frequency of 21GHz, and current gain of 60. The distribution of the ideality factor of collector and base current was very uniform, and the average values of off-set voltage and current was very uniform, and the average values of off-set voltage and current gain were 0.32V and 32 within a 3-inch wafer.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.9 no.3
• /
• pp.647-653
• /
• 2005

According to the design concept of microwave front-end, a low noise amplifier block using HBT cascode topology is proposed to provide high gain and low noise figure with low bias current. We has implemented MMIC-LNA with a modified configuration using inductors to show low noise at the emitter and base of cascoded HBT-MMIC amplifier. The measured performance of the designed MMIC-LNA at 3.7GHz are a gain of 19dB, noise figure of 2.7dB and image rejection of 35dBc using a supply of 3mA and 2.7V. We can convinced that cascoded amplifier block to fulfill a high gain, low noise and image rejection if microwave front-end receiver is designed by cascode MMEC-LNA with the active image rejection filter.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.32A no.2
• /
• pp.57-65
• /
• 1995

The effects of device geometry and layout on high speed performance such as current gain outoff frequency(f$_{T}$) and maximum oscillation frequency(f$_{max}$) are of very improtant for the scaling-down of geterojunction bipolar transistors(HBT$_{s}$). In this paper AlGaAs/GaAs HBTs are fabricated by MBE epitaxial growth and conventional mesa process, and the experimental data of emitter-base geometru dependency of HBT performance are presented in order to provide the quantitative information for optimum device structure design. It is shown that f$_{T}$ and f$_{max}$ are inversely proportional to the emiter stripe width, while the low emitter perimeter/area ratio is better to f$_{T}$ and worse ot f$_{max}$. It is also demonstrated the f$_{T}$ and f$_{max}$ are highly improved by the emitter-base spacing reduction resulting in less parsitic effects. As the result f$_{T}$ of 42GHz and f$_{max}$ of 23GHz are obtained for fabricated HBT with emitter area of 3${\times}20^{\mu}m^{2}$ and E-B spacing of 0.2$\mu$m.m.m.

• Proceedings of the IEEK Conference
• /
• 2000.11a
• /
• pp.357-360
• /
• 2000

This paper describes a parameter extraction method for HBT(Heterojunction Bipolar Transistor) equivalent circuit model without measurements of special test structures or numerical optimizations. Instead, all equivalent circuit parameters are calculated analytically from small-signal S-parameters measured under different bias conditions. These values being extracted from the cutoff mode can be used to extract intrinsic parameters at the active mode. This method yields a deviation of about 1.3 % between the measured and modeled S-parameters.

• Proceedings of the IEEK Conference
• /
• 2001.06b
• /
• pp.13-16
• /
• 2001

InP/InGaAs Heterojunction phototransistors(HPT's) with an optically transparent ITO emitter electrode were fabricated and characterized. At the same time, heterojuntion transistors(HBT's) having the same device layout were fabricated. By comparison with InP/InGaAs HBT's, the do characteristics of InP/InGaAs HPT's showed the similar electrical charateristics of HBT's. the model parameters of the device were extracted and compared.

• Proceedings of the IEEK Conference
• /
• 1999.11a
• /
• pp.287-290
• /
• 1999

In the transmitter of optical fiber transmission systems, a time-division multiplexer combines several parallel data streams into a single data stream with a high bit rate. In this paper, we design a 2:1 (2-channels) time-division multiplexer using SiGe HBT with emitter size of 2$\times$8${\mu}{\textrm}{m}$$^2$. The operation speed is 10Gbps, the rise and fall times of 20-80% are 34ps and 35ps, respectively and the dissipation of power is 0.86W.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.35D no.7
• /
• pp.48-55
• /
• 1998

We propose a new static current source model and parameter extraction method for AlGaAs/GaAs HBT. The proposed model has 9 parameters describing internal currents and are experessed with the physically meaningful parameters.The proposed parameter extraction method uses the measured dC IV curves and does not need the gummel plt data and any optimization process. the constructed model based on the proposed method predicts the measured data well.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.30A no.3
• /
• pp.88-94
• /
• 1993

In this paper, a simple Ebers-Moll Model for the heterojunction bipolar transistor is presented. Using the model structure for the npn type HBT, the current-voltage characteristics was analyzed. And from the obtained terminal currents, the Ebers-Moll equations were derived. Then substituting the physical parameters for heterojunction to those for homojunction, this model would be used to analyze the characteristics of single and/or duble heterojunction HBT's. And directly relating model parameters to device parameters, it would be also used to optimize the characteristics of HBT's. The simulated results using this model were in good agreement with experimental data.

• Journal of the Korean Wood Science and Technology
• /
• v.32 no.3
• /
• pp.52-58
• /
• 2004

The use of N-hydroxyphthalimide (NHPI) as a mediator for laccase has proven to be comparable to N-hydroxybenzotriazole (HBT) for the delignification of kraft pulp, and the transformation of a number of industrial dyes. The advantages of NHPI derivatives are the biodegradation of these compounds compared to HBT, which has been shown to be recalcitrant in the environment, and the more reasonable cost of synthetic process.