• Title/Summary/Keyword: H2 Plasma

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The Characteristics of the Treatment of Pollutants ($SO_2$, NOx) Using Surface Discharge Induced Plasma Chemical Process (SPCP를 이용한 오염물질 ($SO_2$, NOx) 처리 특성)

  • 봉춘근;부문자
    • Journal of Korean Society for Atmospheric Environment
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    • v.14 no.4
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    • pp.333-342
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    • 1998
  • Plasma process has great possibilities to remove SOx, NOx simultaneously with high treatment efficiency and is expected to be suitable for small or middle plants. It was accomplished to evaluate SO2, NOx control possibility and achieve basic data to control pollutants by use of Surface Discharge Induced Plasma Chemical Process (SPCP) in this study. O3 generation characteristics by discharge of a plate was proportional to O2 concentration and power consumption and inversely proportional to temperature and humidity, In case of dry air, NOx was highly generated by N2 and O2 in air during the plasma discharge process but it was decreased considerably as H2O was added. SO2 removal efficiency was very high, and removal rate was 170,350 mEA at 30,50 watt respectively in flue gas which is usually contain HIO. NOx removal efficiency was about 57% at 40 watt power consumption with 7.5% humidity. It is estimated that H2O has an important role in reaction mechanism with pollutants according to plasma discharge.

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Relationship of Plasma Urea Nitrogen Level and Influence of hCG on Pregnancy Rates in Hanwoo Recipients (한우 수란우의 임신율에 대한 hCG 영향과 혈장 요소태질소 수준과의 관계)

  • 박수봉;임석기;우제석;김일화;최선호;이장희;김인철;손동수
    • Journal of Embryo Transfer
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    • v.15 no.2
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    • pp.115-120
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    • 2000
  • This study was undertaken to test the hypothesis the hypothesis that treatment with hCG (5,000 IU) at the time of embryo transfer would enhance pregnancy rates in recipients, and the concentration of plasma urea nitrogen(PUN) in recipients was related to the effect of hCG on the reproductive performance. Blood samples were taken according to experimental condition for the assessment of the endogenous plasma progesterone concentration and plasma urea nitrogen. Concentrations of progesterone in plasma were higher in cows treated with hCG on day 7(estrus=day 0) than in those untreated during 7∼43 days after insemination. The pregnancy rates were 65.5 and 54.6% for the hCG treated and untreated groups, respectively. In recipient group categorized with PUN concentration of <12 mg/이, the pregnancy rates were 68.8 and 46.7% for the hCG treated and untreated groups, respectively. The results suggest that hCG treatment at 7 days after insemination could be used to increase the pregnancy rate of embryo transfer, and transfer, and only the recipients with PUN concentration of <12 mg/dl were influenced by treatment with hCG.

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Effect of Plasma Treatment on the Bond Strength of Sn-Pb Eutectic Solder Flip Chip (Sn-Pb 공정솔더 플립칩의 접합강도에 미치는 플라즈마 처리 효과)

  • 홍순민;강춘식;정재필
    • Journal of Welding and Joining
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    • v.20 no.4
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    • pp.498-504
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    • 2002
  • Fluxless flip chip bonding process using plasma treatment instead of flux was investigated. The effect of plasma process parameters on tin-oxide etching characteristics were estimated with Auger depth profile analysis. The die shear test was performed to evaluate the adhesion strength of the flip chip bonded after plasma treatment. The thickness of oxide layer on tin surface was reduced after Ar+H2 plasma treatment. The addition of H2 improved the oxide etching characteristics by plasma. The die shear strength of the plasma-treated Sn-Pb solder flip chip was higher than that of non-treated one but lower than that of fluxed one. The difference of the strength between plasma-treated specimen and non-treated one increased with increase in bonding temperature. The plasma-treated flip chip fractured at solder/TSM interface at low bonding temperature while the fracture occurred at solder/UBM interface at higher bonding temperature.

Plasma-Enhanced Atomic-Layer-Deposited SiO2 and SiON Thin Films at Low Temperature (< 300℃) using ICP Type Remote Plasma for 3-Dimensional Electronic Devices (3차원 소자 제작을 위한 ICP Type Remote PEALD를 이용한 저온(< 300℃) SiO2 및 SiON 박막 공정)

  • Kim, Dae Hyun;Park, Tea Joo
    • Journal of the Semiconductor & Display Technology
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    • v.18 no.2
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    • pp.98-102
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    • 2019
  • Direct plasma-enhanced atomic layer deposition (PEALD) are widely used for $SiO_2$ and SiON thin film process in current semiconductor industry. However, this exhibits poor step coverage for three-dimensional device structure due directionality of plasma species as well as plasma damage on the substrate. In this study, to overcome this issue, low temperature (< $300^{\circ}C$) $SiO_2$ and SiON thin film processes were studied using inductively coupled plasma (ICP) type remote PEALD with various reactant gases such as $O_2$, $H_2O$, $N_2$ and $NH_3$. It was confirmed that the interfacial properties such as fixed charge density and charge trapping behavior of thin films were considerably improved by hydrogen species in $H_2O$ and $NH_3$ plasma compared to the films grown with $O_2$ and $N_2$ plasma. Furthermore, the leakage current density of the thin films was suppressed for same reason.

Anti-inflammatory Effect of Scutellariae Radix

  • Lee, Eun
    • Korean Journal of Plant Resources
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    • v.20 no.6
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    • pp.548-552
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    • 2007
  • This research is the basic research to develop new anti-inflammatory medicine by feeding Scutellariae Radix extract to lipopolysaccharide(LPS) exposed rats, and analyzed it's effect on inflammatory response by LPS derivation. As a result, Plasma interleukin-$1\beta(IL-1\beta)$ and Plasma interleukin-6(IL-6) concentration showed the highest point at 5h after LPS injection, and in this time, the concentration of $IL-1\beta$ and IL-6 in the Scutellariae Radix extract groups at 200mg/kg and 300mg/kg showed lower values than that of control group. Plasma tumor necrosis $factor-\alpha(TNF-\alpha)$ concentration after LPS injection showed the highest point at 2h and showed similar level till at 5h. $TNF-\alpha$ concentration at 2h after LPS injection showed the low value only in the Scutellariae Radix extract 300mg/kg group compared to others, and in 5h, the all Scutellariae Radix extract groups showed lower value than that of the control group. Plasma interleukin-10(IL-10) concentration increased at 2h after LPS injection and reached the highest at 5h. After LPS injection the IL-10 concentration at 2h, the Scutellariae Radix extract injection group at 300mg/kg showed higher value than that of the others, and in 5h after LPS injection, Scutellariae Radix extract 200mg and 300mg groups showed higher value than the control group. Concluding from the above results, in inflammatory response by LPS derivation, the Scutellariae Radix gives positive effect.

Surface Treatment of Steel by Plasma Boronizing

  • Lee, G.H.;Na, K.S.m;Kwon, S.C.;Kim, S.K.
    • Journal of the Korean Vacuum Society
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    • v.4 no.S2
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    • pp.49-57
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    • 1995
  • At present the processes of boronizing have been mostly studied in a plasma from gaseous compounds containing the impregnating element and are in an industrial use. These have been investigated by a variety of works in a glow discharge with different mixture ratios of $B_2H_6$ and $H_2$ as well as $BCl_3$ and $H_2$. The active atomosphere has been diluted by Ar or some other inert gas in order to enhance control of boron potential and to reduce the ignition voltage of the glow discharge. The Control of gaseous atomosphere is essential to a boride layer in plamsa boronizing treatment. The boride formation is required to make the workpiece surface saturated with boron content. The present study considers the efficiency of plasma boronizing reactions and the morphology of boride layer under various plasma conditions

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N$_2$ Plasma Treatment Effects of Silicon Nitride Insulator Layer for Thin Film Transistor Applications

  • Ko, Jae-Kyung;Park, Yong-Seob;Park, Joong-Hyun;Kim, Do-Young;Yi, Jun-Sin;Chakrabarty, K.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.563-566
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    • 2002
  • We investigated to decrease the leakage current of SiNx film by employing $N_2$ plasma treatment. The insulator layers were prepared by two step process; the $N_2$ plasma treatment and then PECVD SiNx deposition with $SiH_4$, $N_2$ gases. To prove the influence of the $N_2$ plasma treatment, the Si substrate was exposed to the plasma, which was generated in Ne gas ambient. Without plasma treatment SiNx film grow at the rate of 7. 03 nm/min, has a refractive index n = 1.77 and hydrogen content of $2.16{\times}10^{22}cm^{-3}$ for $N_2/SiH_4$ gas flow ratio of 20. The obtained films were analyzed in terms of deposition rates, refractive index, hydrogen concentration, and electrical properties. By employing $N_2$ plasma treatment, interface traps such as mobile charges and injected charges were removed, hysteresis of capacitance-voltage (C-V) disappeared. We observed plasma treated sample were decreased the leakage current density reduces by 2 orders with respect to the sample having no plasma treatment.

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Hydrogen Production for PEMFC Application in Plasma Reforming System (PEMFC용 플라즈마 개질 시스템의 수소 생산)

  • Yang, Yoon Cheol;Chun, Young Nam
    • Korean Chemical Engineering Research
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    • v.46 no.5
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    • pp.1002-1007
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    • 2008
  • The purpose of this paper studied the optimal hydrogen production condition of plasma reforming system to operate the PEMFC. Plasma reforming reactor used with Ni catalyst reactor at the same time, So $H_2$ concentration increased. Also the WGS and PrOx reactor were designed to remove CO concentration under 10 ppm, because CO has effect on catalyst poisoning of PEMFC. The maximum $H_2$ production condition in plasma reforming system was S/C ratio 3.2, $CH_4$ flow rate 2.0 L/min, catalytic reactor temperature $700{\pm}5^{\circ}C$ and input power 900 W. At this time, the concentration of produced syngas was $H_2$ 70.2%, CO 7.5%, $CO_2$ 16.2%,$CH_4$ 1.8%. The hydrogen yield, hydrogen selectivity and $CH_4$ conversion rate were 56.8%, 38.1% and 92.2% respectively. The energy efficiency and specific energy requirement were 37.0%, 183.6 kJ/mol. In additional, The experiment of $CO_2/CH_4$ ratio proceeded. Also WGS reactor experiment was proceeding on optimum condition of plasma reactor and the exit concentration were $H_2$ 68%, CO 337 ppm, $CO_2$ 24.0%, $CH_4$ 2.2%, $C_2H_4$ 0.4%, $C_2H_6$ 4.1%. At this time, experiment result of PrOx reactor were $H_2$ 51.9%, CO 0%, $CO_2$ 17.3%.

Study on the Decomposition of Some Volatile Organic Compounds by Photocatalyst Plasma Reaction (광촉매 플라즈마 반응에 의한 몇가지 VOCs의 제거에 관한 연구)

  • 허경욱
    • Journal of Korean Society for Atmospheric Environment
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    • v.16 no.4
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    • pp.373-380
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    • 2000
  • A new type of photocatalyst plasma air purification filter for decomposition of some VOCs has been developed. The photocatalyst plasma air purification filter employs the pulsed discharge plasma as an energy source of TiO2. photocatalyst instead of UV light. In closed room(2m3) test removal efficiency of some VOCs was 80∼100% in 15∼24 hours. In the initial step of phptocatalyst plasma reaction. Acetone and Nitromethane etc were detected. But they were completely oxidized to CO2 and H2O.

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Influence of gas mixture He-Ne-Xe on the vacuum ultraviolet intensity in ac-PDPs.

  • Yoo, N.L.;Jung, K.B.;Lee, J.H.;Lee, S.B.;Han, Y.K.;Jeong, S.H.;Lee, H.J.;Son, C.G.;Lim, J.E.;Oh, P.Y.;Moon, M.W.;Jeoung, J.M.;Ko, B.D.;Cho, G.S.;Uhm, H.S.;Choi, E.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1221-1224
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    • 2005
  • The improvement of luminance and luminous efficiency is the one of the most important parts in AC-PDPs. To achieve high luminance and luminous efficiency, high VUV emission efficiency is needed. We measured the emission spectra of the vacuum ultraviolet(VUV) rays in surface discharge AC-PDP with ternary gas mixture of He-Ne-Xe. The influence of He-Ne-Xe gas-mixture ratio on excited $Xe^{\ast}$ resonant atoms and $Xe_2\;^{\ast}$ dimers has been investigated. It is found that luminous efficiency of ternary gas mixture, He-Ne-Xe, is shown to be much higher than that of binary gas mixture of Ne-Xe. For improving discharge luminous efficiency, we have studied VUV emission characteristics of ternary gas mixture, He(50%)-Ne-Xe and He(70%)-Ne-Xe with Xe concentration and filling gas pressure.

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