• Transactions on Electrical and Electronic Materials
• /
• v.1 no.2
• /
• pp.12-17
• /
• 2000

Helicon waves were excited by a Nagoya type III antenna in magnetized plasma, and hydrogen and methane are fed through a Mass Flow Controller(MFC). We made a diagnosis of properties of helicon plasma by H$_2$gaseous discharge, and fabricated the diamond thin film. The maximum measured electron density was 1${\times}$10$\^$10/ cm$\^$-3/. Diamond films have been growo on (100) silicon substrate using the helicon plasma chemical vapor deposition. Diamond films were deposited at a pressure of 0.1 Torr, deposition time of 40~80 h, a substrate temperature of 700$^{\circ}C$ and methane concentrations of 0.5~2.5%. The growth characteristics were investigated by means of X-ray Photoelectron (XPS) and X-ray Diffraction(XRD), XRD and XPS analysis revealed that SiC was formed, and finally diamond particles were definitely deposited on it. With increasing deposition time, the thickness and crystallization of the daimond thin film increased, For this system the optimum condition of methane concentration was estimated to near to 1.5%.

• Biomolecules & Therapeutics
• /
• v.14 no.1
• /
• pp.40-44
• /
• 2006

Mirtazapine is an antidepressant agent with dual action on both the noradrenergic and serotonergic neurotransmitter systems. A simple high performance liquid chromatographic method has been developed and validated for the quantitative determination of mirtazapine in human plasma. A reversed-phase Cl8 column was used for the determination of mirtazapine with a mobile phase composed of 0.01M ammonium acetate solution (pH 4.2) and acetonitrile (75:25, v/v%) at a flow rate of 1.2 mL/min. Terazosin hydrochloride was used as an internal standard. The fluorescence detector was set at excitation and emission wavelengths of 290 and 350 nm, respectively. Intra- and inter-day precision and accuracy were acceptable for all quality control samples including the lower limit of quantification of 3 ng/mL. Mirtazapine was stable in human plasma under various storage conditions. This method was used successfully for a pharmacokinetic study using plasma samples after oral administration of a single 30 mg dose as mirtazapine base to 8 healthy volunteers. The maximum plasma concentration of mirtazapine was $64.1{\pm}28.0ng/mL$ at 1.8 h, and the area under the curve and elimination half-life were calculated to be $674.1{\pm}218.5ng\;h/mL\;and\;23.4{\pm}3.8h$, respectively.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.49 no.8
• /
• pp.438-444
• /
• 2000

We report the effects of etch process parameters on the ohmic contact formation in the plasma etching of GaN. Planar inductively coupled plasma system with $CH_4/H_2/Ar$gas chemistry has been used as etch reactor. The contact resistance and the specific contact resistance have been investigated using transfer length method as a function of RF bias power and %Ar gas concentration in total flow rate. AES(Auger electron spectroscopy) analysis revealed that the etched GaN has nonstoichiometric Ga rich surface and was contaminated by carbon and oxygen. Especially large amount of carbon was detected at the sample etched for high bias power (or voltage) condition, where severe degradation of contact resistance was occurred. We achieved the low ohmic contact of $2.4{\times}10^{-3} {\Omega}cm^2$ specific contact resistance at the input power 400 W, RF bias power 150 W, and working pressure 10mTorr with 10 sccm $CH_4$, 15 sccm H2, 5 sccm Ar gas composition.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.498-498
• /
• 2013

Atmospheric Pressure Plasmas have pioneered a new field of plasma for biomedical application bridging plasma physics and biology. Biological and medical applications of plasmas have attracted considerable attention due to promising applications in medicine such as electro-surgery, dentistry, skin care and sterilization of heat-sensitive medical instruments [1]. Traditional approaches using electronic devices have limits in heating, high voltage shock, and high current shock for patients. It is a great demand for plasma medical industrial acceptance that the plasma generation device should be compact, inexpensive, and safe for patients. Microwave-excited micro-plasma has the highest feasibility compared with other types of plasma sources since it has the advantages of low power, low voltage, safety from high-voltage shock, electromagnetic compatibility, and long lifetime due to the low energy of striking ions [2]. Recent experiment [2] shows three-log reduction within 180-s treatment of S. mutans with a low-power palm-size microwave power module for biomedical application. Experiments using microwave plasma are discussed. This low-power palm-size microwave power module board includes a power amplifier (PA) chip, a phase locked loop (PLL) chip, and an impedance matching network. As it has been a success, more compact-size module is needed for the portability of microwave devices and for the various medical applications of microwave plasma source. For the plasma generator, a 1.35-GHz coaxial transmission line resonator (CTLR) [3] is used. The way of reducing the size and enhancing the performances of the module is examined.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.259.1-259.1
• /
• 2014

Recently non-thermal plasma has been frequently applied to various research fields. The liquid plasma have received much attention lately because of interests in surgical and nanomaterial synthesis applications. Especially, intensive researches have been carried out for non-thermal plasma in liquid by using various electrode configurations and power supplies. We have developed a bioplasma source which could be used in a liquid, in which outer insulator has been covered onto the outer electrode. Also we have also put an insulator between the inner and outer electrode. Based on the surface discharge mode, the nonthermal bioplasma has been generated inside a liquid by using an alternating current voltage generator with peak voltage of 12 kV under driving frequency of 22 KHz. Here the discharge voltage and current have been measured for electrical characteristics. Especially, We have measured discharge and optical characteristics under various liquids of deionized (DI) water, tap water, and saline by using monochromator. We have also observed nitric oxide (NO), hydrogen peroxide (H2O2), and hydroxyl (OH) radical species by optical emission spectroscopy during the operation of bioplasma discharge inside various kinds of DI water, tap water, and saline. Here the temperature has been kept to be $40^{\circ}C$ or less when discharge in liquid has been operated in this experiment. Also we have measured plasma temperature by high speed camera image and density by using either H-alpha or H-beta Stark broadening method.

• Korean Journal of Materials Research
• /
• v.28 no.9
• /
• pp.511-515
• /
• 2018

W-10 wt% Ti alloys that have a homogeneous microstructure are prepared by thermal decomposition of $WO_3-TiH_2$ powder mixtures and spark plasma sintering. The reduction and dehydrogenation behavior of $WO_3$ and $TiH_2$ are analyzed by temperature programmed reduction and a thermogravimetric method, respectively. The X-ray diffraction analysis of the powder mixture, heat-treated in an argon atmosphere, shows W- oxides and $TiO_2$ peaks. Conversely, the powder mixtures heated in a hydrogen atmosphere are composed of W, $WO_2$ and $TiO_2$ phases at $600^{\circ}C$ and W and W-rich ${\beta}$ phases at $800^{\circ}C$. The densified specimen by spark plasma sintering at $1500^{\circ}C$ in a vacuum using hydrogen-reduced $WO_3-TiH_2$ powder mixtures shows a Vickers hardness value of 4.6 GPa and a homogeneous microstructure with pure W, ${\beta}$ and Ti phases. The phase evolution dependent on the atmosphere and temperature is explained by the thermal decomposition and reaction behavior of $WO_3$ and $TiH_2$.

• Proceedings of the KIPE Conference
• /
• 2003.07a
• /
• pp.260-263
• /
• 2003

When ICP(Inductive Coupled Plasma type etching and wafer manufacturing is being processed in semiconductor process, a noxious gas in PFC and CFC system is generated. Gas cleaning dry scrubber is to remove this noxious gas. This paper describes a power source device, 2MHz switching frequency class 2kW RF Generator, used as a main power source of the gas cleaning dry scrubber. The power stage of DC/DC converter is consist of full bridge type converter with 100kHz switching frequency Power amplifier is push pull type inverter with 2MHz switching frequency, and transmission line transformer. The adequacy of the circuit type and the reliability of generating plasma in various load conditions are verified through 50$\Omega$ dummy load and chamber experiments result.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.454-454
• /
• 2010

In order to achieve a high efficient a-Si solar cell, the TCO (transparent conductive oxide) substrates are required to be a low sheet resistivity, a high transparency, and a textured surface with light trapping effect. Recently, a zinc oxide (ZnO) thin film attracts our attention as new coating material having a good transparent and conductive for TCO of solar cells. In this paper the optical properties of $H_2$ post-treated BZO (boron doped ZnO, ZnO:B) thin film are investigated with $O_2$-plasma treatment. The BZO thin films by MOCVD (Metal Organic Chemical Vapor Deposition) are investigated and the samples of $H_2$ post-treated BZO thin film are tested with $O_2$-plasma treatment by plasma treatment system with 13.56 MHz as RIE (Reactive Ion Etching) type. We measured the optical properties and surface morphology of BZO thin film with and without $O_2$-plasma treatment. The optical properties such as transmittance, reflectance and haze are measured with integrating sphere and ellipsometer. This result of the BZO thin film with and without $O_2$-plasma treatment is application to the TCO for solar cells.

• Transactions on Electrical and Electronic Materials
• /
• v.13 no.2
• /
• pp.69-72
• /
• 2012

In this study, deposition of low-dielectric constant SiOC(H) films by conventional plasma-enhanced chemical vapor deposition (PECVD) were investigated through various characterization techniques. The results show that, with an increase in the plasma power density, the relative dielectric constant (k) of the deposited films decreases whereas the refractive index increases. This is mainly due to the incorporation of organic molecules with $CH_3$ group into the Si-O-Si cage structure. It is as confirmed by FT-IR measurements in which the absorption peak at 1,129 $cm^{-1}$ corresponding to Si-O-Si cage structure increases with power plasma density. Electrical characterization reveals that even after fast thermal annealing process, the leakage current density of the deposited films is in the order of $10^{-11}$ A/cm at 1.5 MV/cm. The reliability of the SiOC(H) film is also further characterized by using BTS test.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.356-357
• /
• 2008

The effects of $O_2$ plasma ashing process for surface treatment of nano-wire Bio-FET were investigated. In order to evaluate the plasma damage introduced by $O_2$ plasma ashing, a back-gate biasing method was developed and the electrical characteristics as a function of $O_2$ plasma power were measured. Serious degradations of electrical characteristics of nano-wire Bio-FET were observed when the plasma power is higher than 50 W. For curing the plasma damages, a forming gas anneal (2 %, $H_2/N_2$) was carried out at $400^{\circ}C$. As a result, the electrical characteristics of nano-wire Bio-FET were considerably recovered.