• 한국표면공학회지
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• 제45권5호
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• pp.206-211
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• 2012

Process analysis was carried out during deposition of MgO by inductively coupled plasma assisted reactive magnetron sputtering in Ar and $O_2$ ambient. At the initiation of Mg sputtering with bipolar pulsed dc power in Ar ambient, total pressure showed sharp increase and then slow fall. To analyse partial pressure change, QMS was used in downstream region, where the total pressure was maintained as low as $10^{-5}$ Torr during plasma processing, good for ion source and quadrupole operation. At base pressure, the major impurity was $H_2O$ and the second major impurity was $CO/N_2$ about 10%. During sputtering of Mg in Ar, $H_2$ soared up to 10.7% of Ar and remained as the major impurity during all the later process time. When $O_2$ was mixed with Ar, the partial pressure of Ar decreased in proportion to $O_2$ flow rate and that of $H_2$ dropped down to 2%. It was understood as Mg target surface was oxidized to stop $H_2$ emission by Ar ion sputtering. With ICP turned on, the major impurity $H_2$ was converted into $H_2O$ consuming $O_2$ and C was also oxidized to evolve CO and $CO_2$.

• 한국표면공학회지
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• 제39권5호
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• pp.206-209
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• 2006

Indium tin oxide (ITO) films were synthesized on polymer (PES, polyethersulfone) at room temperature by pulsed DC magnetron sputtering. By the control of introducing hydrogen to argon atmosphere, the resistivity of ITO films was obtained at $5.27\;{\times}\;10^{-4}\;{\Omega}{\cdot}cm$ without substrate heating in comparison with $2.65\;{\times}\;10{-3}\;{\Omega}{\cdot}cm$ under hydrogen free condition. ITO film synthesized at Ar condition was changed from amorphous to crystalline. These result from the enhancement of electron temperature in $Ar\;+\;H_2$ plasma, which induces the increase of ionization of target materials and argon. The dominant increase of ions such as In II and O II and neutral Sn I was monitored by optical emission spectroscopy (OES). Thermal energy required for the crystalline film formation is compensated by kinetic energy transfer through ion bombardments to substrate.

• 한국진공학회지
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• 제20권1호
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• pp.14-21
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• 2011

유리관에 삽입된 주사기 바늘을 이용한 플라즈마 제트 장치의 특성을 조사하였다. 원통형 주사기 바늘 전극에 교류 고전압을 인가하고, 유리관 끝에 설치된 접지전극의 형태에 따른 플라즈마의 방출 특성을 조사하였다. 접지전극이 없는 경우 방전 개시 전압이 약 3 kV이며, 플라즈마 방사 길이는 약 10 mm이다. 또한 높은 방전 개시 전압으로 인하여 플라즈마 방사 길이 및 전류 최소량의 제어가 어렵다. 내부접지 전극의 경우는 방전 개시 전압이 약 1 kV로 낮다. 그러나 플라즈마 전류가 내부에 위치한 접지 전극으로 흐르기 때문에 유리관 끝으로부터 플라즈마가 방출되지 않는다. 외부접지 전극의 경우는 인가전압 1~2 kV에서, 방전 전류 1~4 mA이며 플라즈마 방사 길이를 0~10 mm의 범위에서 용이하게 제어된다.

• Archives of Pharmacal Research
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• 제27권7호
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• pp.806-810
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• 2004

Metformin is a biguanide antihyperglycemic agent often used for the treatment of non-insulin dependent diabetics (NIDDM). In this study, the pharmacokinetics and pharmacodynamics of metformin were investigated in Korean healthy volunteers during a fasting state for over 10 h. In order to evaluate the amount of glucose-lowering effect of metformin, the plasma concentrations of glucose were measured for a period of 10 h followed by the administration of metformin (oral 500 mg) or placebo. In addition, the concentration of metformin in blood samples was determined by HPLC assay for the drug. All volunteers were consumed with 12 g of white sugar 10 minutes after drug intake to maintain initial plasma glucose concentration. The time courses of the plasma concentration of metformin and the glucose-lowering effect were analyzed by nonlinear regression analysis. The estimated $C_{max}$, $T_{max}$, $CL_{t}$/F (apparent clearance), V/F(apparent volume of distribution), and half-life of metformin were 1.42$\{pm}$0.07 $\mu\textrm{g}$/mL, 2.59$\{pm}$0.18h, 66.12$\{pm}$4.6 L/h, 26.63 L, and 1.54 h respectively. Since a significant counterclock-wise hysteresis was found for the metformin concentration in the plasma-effect relationship, indirect response model was used to evaluate pharmacodynamic parameters for metformin. The mean concentration at half-maximum inhibition $IC_{50}$, $k_{in}$, $k_{out}$ were 2.26 $\mu\textrm{g}$/mL, 83.26 $H^{-1}$, and 0.68 $H^{-1}$, respectively. Therefore, the pharmacokinetic-pharmacodynamic model may be useful in the description for the relationship between plasma concentration of metformin and its glucose-lowering effect.

• 대한의생명과학회지
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• 제7권3호
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• pp.151-159
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• 2001

Many prospective studies have confirmed the predictive value of plasma fibrinogen levels for vascular diseases, including ischemic heart disease. Several polymorphisms of the $\beta$fibrinogen gene have been investigated in relation to plasma fibrinogen levels. The blood samples for DNA were collected from 109 healthy Koreans who have no relationship by blood (67 males and 42 females) in due consideration of some other factors such as gender, age, and smoking status. Four polymorphisms of the $\beta$fibrinogen gene that consist of HaeIII, AluI, MaII and BcII restriction fragment length polymorphisms (RFLPs) were investigated to examine the associations between RFLPs and plasma fibrinogen levels. In conclusion, the significant associations between HaeIII, AluI, MnII RFLPs(H$_1$H$_2$, M$_1$M$_2$, $A_1$A$_2$) and the concentration of plasma fibrinogen were shown by the smokers as well as by the old people more than 50, whereas the association between BcII and plasma fibrinogen were shown no connection with the status of age and smoking. The concentration of plasma fibrinogen was significantly shown higher by the old people ($\geqq$50) by the younger people ($\leqq$49) in male and also higher by the smokers than by the nonsmokers.

• 한국진공학회지
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• 제6권1호
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• pp.91-96
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• 1997

평면형 유도 결합 플라즈마의 전기적 특성을 측정하였고 Langmuir probe를 이용하 여 전자의 밀도와 온도를 측정하였다. 코일과 플라즈마를 포함한 총 부하의 저항 성분은 1 에서 4$\Omega$까지 변하였고 인덕턱스는 $1.5\mu$H와 2$\mu$H사이의 값을 가졌다. $10^{11}/\textrm{cm}^3$ 이상의 고밀 도 플라즈마를 발생시켰으며 전자의 온도는 공정 조건에 따라 3에서 5eV까지 변하였다. 산 화막 식각시 선택도를 개선하기 위한 방법으로 바이어스 전압을 변조하는 방법을 모색하였 다. C4F8플라즈마에서 바이어스 변조 방법을 사용하였을 때 선택도는 크게 향상 되었으나 산화막 식각율이 400$\AA$/min 이하였다. 선택도 향상을 위해 수소를 첨가한 실험에서 $C_4F_8$ 플 라즈마에 60% $H_2$를 첨가하였을 때 선택도 50이상, 산화막 식각율 2000$\AA$/min 이상의 결과 를 얻을 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2001년도 제21회 학술발표회 초록집
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• pp.97-98
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• 2001

• 한국재료학회:학술대회논문집
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• 한국재료학회 2002년도 추계학술발표강연 및 논문개요집
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• pp.80-80
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• 2002

• Archives of Pharmacal Research
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• 제29권4호
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• pp.328-332
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• 2006

The bioequivalence and pharmacokinetics of alendronate sodium tablets were examined by determining the plasma concentration of alendronate. Two groups, consisting of 24 healthy volunteers, each received a 70 mg reference alendronate sodium tablet and a test tablet in a $2{\times}2$ crossover study. There was a 6-day washout period between doses. The plasma alendronate concentration was monitored for 7 h after the dose, using HPLC-Fluorescence Detector (FD). The area under the plasma concentration-time curve from time 0 to the last sampling time at 7 h $(AUC_{0-7h})$ was calculated using the linear-log trapezoidal rule. The maximum plasma drug concentration $(C_{max})$ and the time to reach $C_{max}(T_{max})$ were derived from the plasma concentration-time data. Analysis of variance was performed using logarithmically transformed $AUC_{0-7h}\;and\;C_{max}$, and untransformed $T_{max}$. For the test medication versus the reference medication, the $AUC_{0-7h}\;were\;87.63{\pm}29.27\;vs.\;102.44{\pm}69.96ng\;h\;mL^{-1}$ and the $C_{max}$ values were $34.29{\pm}13.77\;vs.\;38.47{\pm}24.39ng\;mL^{-1}$ respectively. The $90\%$ confidence intervals of the mean differences of the logarithmic transformed $AUC_{0-7h}$ and $C_{max}$ values were log 0.8234-log 1.1597 and log 0.8222-log 1.1409, respectively, satisfying the bioequivalence criteria guidelines of both the US Food and Drug Administration and the Korea Food and Drug Administration. The other pharmacokinetic parameters for the test drug versus reference drug, respectively, were: $t_{1/2},\;1.87{\pm}0.62\;vs.\;1.77{\pm}0.54\;h;\;V/F,\;2061.30{\pm}986.49\;vs.\;2576.45{\pm}1826.05\;L;\;CL/F,\;835.32{\pm}357.35\;vs.\;889.48{\pm}485.87\;L\;h^{-1}; K_{el},\;0.42{\pm}0.14\;vs.\;0.40{\pm}0.18\;h^{-1};\;Ka,\;4.46{\pm}3.63\;vs.\;3.80{\pm}3.64\;h^{-1};\;and\;T_{lag},\;0.19{\pm}0.09\;vs.\;0.18{\pm}0.06\;h$. These results indicated that two alendronate formulations(70-mg alendronate sodium) were biologically equivalent and can be prescribed interchangeably.

• Transactions on Electrical and Electronic Materials
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• 제10권2호
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• pp.35-39
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• 2009

A novel Helmholtz coil inductively coupled plasma(H-ICP) etcher is proposed and characterized for deep nano-scale CMOS technology. Various hardware tests are performed while varying key parameters such as distance between the top and bottom coils, the distance between the chamber ceiling and the wafer, and the chamber height in order to determine the optimal design of the chamber and optimal process conditions. The uniformity was significantly improved by applying the optimum conditions. The plasma density obtained with the H-ICP source was about $5{\times}10^{11}/cm^3$, and the electron temperature was about 2-3 eV. The etching selectivity for the poly-silicon gate versus the ultra-thin gate oxide was 482:1 at 10 sccm of $HeO_2$. The proposed H-ICP was successfully applied to form multiple 60-nm poly-silicon gate layers.