• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.2
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• pp.93-97
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• 2010

We have studied the effect of the chemical composition of the ZnO nanorod surface on the optical characteristics. The surface was treated with H- and O-plasma at different surface temperatures. The chemical composition of the surface of the ZnO nanorod, being investigated by Auger Electron Spectroscopy(AES), was related to the Photoluminescence(PL) data reported in our previous results. The AES showed the opposite results for the $H_2$ and $O_2$ plasma treatments. The ratio of Zn to O on the surface of the ZnO nanorod increased in the case of $H_2$ plasma, while the composition rate of O increased after $O_2$ plasma treatment. The AES results seems to be correlated to the shift in PL peaks. The increase in the composition rate of Zn on the surface of ZnO nanorod is considered to cause the blue shift of the UV peak. On the contrary, the relative increase of O is considered to cause the red shift in PL peaks.

• Transactions of the Korean hydrogen and new energy society
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• v.7 no.1
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• pp.81-92
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• 1996

The Ar/Ar-$H_2$ plasma method was applied to reduce oxides and refine metals of V, Ta and B. In addition, the high temperature chemical reaction in Ar plasma and of the refining reaction in the Ar-(20%)$H_2$ plasma were analyzed. The crude V of 96wt% purity was obtained at the ratio of $C/V_{2}O_{5}=4.50$ by the Ar plasma reduction grade and the maximum reduction was obtained at $C/V_{2}O_{5}=4.50$ due to the $O_{2}$ loss from the thermal decomposition of vanadium oxide. In the Ar-(20%)$H_2$ plasma refining, the metallic V of 99.2wt% was produced at the ratio of $C/V_{2}O_{5}=4.40$. It was considered that a main refining reaction resulted from the chemical reaction between the residual carbon and residual oxygen. The metallic Ta of 99.8wt% was obtained at the ratio of $C/Ta_{2}O_{5}=5.10$ in a Ar plasma reduction and the Oz loss from the thermal decomposition of tantalum pentoxide did not take place. The deoxidation reaction was more significant than the decarburization reaction in the Ar-(20%)$H_2$ plasma refining and the metallic Ta of 99.9wt% was produced within the range of $C/Ta_{2}O_{5}$ ratio of 4.50 to 5.10. The Vickers hardness of Ta in the above mentioned range was about 220Hv due to the decrease in a residual oxygen by the deoxidation reaction. On the other hand, C is no suitable agent for the reduction of $B_{2}O_{3}$ by the Ar and Ar-$H_2$ plasma. But Fe-B-Si alloy was produced with the reduction of $B_{2}O_{3}$ in the melt when Fe, C, $B_{2}O_{3}$, and ferroboron mixtures were melted by the high frequency induction melting.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2006.04a
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• pp.142-142
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• 2006

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.198.2-198.2
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• 2016

Reactive oxygen and nitrogen species (RONS) can be generated by using non-thermal atmospheric pressure plasma jet which have profound biomedical applications [1, 2]. In this work, reactive oxygen species like hydroxyl radical (OH) are generated by using non-thermal direct plasma jet above water surface using Ar gas and their properties have been studied using ultraviolet absorption spectroscopy. OH radicals are found to be generated simultaneously with the discharge current with concentration of $2.7{\times}1015/cm3$ at 7mm above water surface while their persistence time have been measured to be $2.8{\mu}S$. In addition, it has been shown that plasma initiated ultraviolets play a major role to generate RONS inside water. Further works are going on to measure the temporal behavior of OH and $O2^*-$.

• Bulletin of the Korean Chemical Society
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• v.22 no.2
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• pp.159-163
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• 2001

Si3N4 powder has been analyzed by inductively coupled plasma atomic emission spectrometry (ICP-AES). The sample was dissolved by high-pressure acid digestion with HF, H2SO4 (1+1), and HNO3 mix ture. This technique is well suited for the impurity analysis of Si3N4 because the matrix interference is eliminated. A round-robin samples trace elements, such as Ca, W, Co, Al, Fe, Mg, and Na, were determined. For the direct analysis, slurry nebulization of 0.96 mm Si3N4 powder also has been studied by ICP-AES. Emission intensities of Fe were measured as ICP operational conditions were changed. Significant signal difference between slurry particles and aqueous solution was observed in the present experiment. Analytical results of slurry injection and high-pressure acid digestion were compared. For the use of aqueous standard solution for calibration, k-factor was determined to be 1.71 for further application.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2013.05a
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• pp.170-170
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• 2013

We present a novel etching technique for 2-dimentional (2-D) hexagonal boron nitride (h-BN) by using capacitively coupled plasma (CCP) of oxygen combined with a post-treatment by de-ionized (DI) water. Oxygen CCP etching process for h-BN has been systematically studied. It is found that a passivation layer was generated to obstruct further etching while it can be easily and radically removed by DI water. An essential cleaning effect also has been observed in the etching process, organic residues are successfully removed and the surface roughness has much decreased. Considering h-BN is the most important 2-D dielectric material and its potential application for graphene to silicon-based electronic devices, such an etching method can be widely used to control the 2-D h-BN thickness and improve the surface quality.

• Applied Chemistry for Engineering
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• v.34 no.4
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• pp.404-411
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• 2023

For the direct reforming of biogas, a three-phase gliding arc plasma reformer was designed to expand the plasma discharge region, and the operation conditions of the plasma reformer, such as the S/C ratio, the gas flow rate, and the plasma input power, were optimized. The H₂ production efficiency is increased at a lower specific plasma input energy density, but byproducts such as C_XH_Y and carbon soot are generated along with the increase in H₂ production efficiency. The formation of byproducts is decreased at higher specific plasma input energy densities and S/C ratios. The optimized operation conditions are 5.5 ~ 6.0 kJ/L for the specific plasma input energy density and 3 for the S/C ratio, considering the conversion efficiency, H₂ production, and byproduct formation. It is expected that the H₂ production efficiency will improve with the decrease in fuel consumption in biogas burners because the heat generated from plasma discharge heats up the feed gas to over 500 ℃.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.306-306
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• 2010

A high density (> $10^{11}\;cm^{-3}$) and low electron temperature (< 2 eV) plasma is produced by using a conventional HF (13.56 MHz) plasma enhanced chemical vapor deposition (PECVD) with an additional ultra high frequency (UHF, 314 MHz) plasma source utilizing two parallel antenna assembly. It is applied for the high rate synthesis of high quality nanocrystalline silicon (nc-Si) films. A high deposition rate of 1.8 nm/s is achieved with a high crystallinity (< 70%), a low spin density (< $3{\times}10^{16}\;cm^{-3}$) and a high light soaking stability (< 1.5). Optical emission spectroscopy measurements reveal emission intensity of $Si^*$ and $SiH^*$, intensity ratio of $H{\alpha}/Si^*$ and $H{\alpha}/SiH^*$ which are closely related to film deposition rate and film crystallinity, respectively. A high flux of precursor and atomic hydrogen which are produced by an additional high excitation frequency is effective for the fast deposition of highly crystallized nc-Si films without additional defects.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.190.1-190.1
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• 2016

One of the most serious problems faced by billions of people today is the availability of fresh water. According to statistics, 15% of the world's total output of dye products is discharged into the environment as dye wastewater, which seriously pollutes groundwater resources. For the treatment of chemically and biologically contaminated water the advanced oxidation processes (AOPs) shows the promising action. The main advantage with AOPs is the ability to degrade the organic pollutants to $CO_2$ and $H_2O$. For this degradation process the AOPs generation of powerful and non-selective radicals that may oxidize majority of the organic pollutants present in the water body. To generate the various reactive chemical species such as radicals (${\bullet}OH$, ${\bullet}H$, ${\bullet}O$, ${\bullet}HO_2$) and molecular species ($H_2O_2$, $H_2$, $O_2$) in large amount in water, we have used the atmospheric pressure plasma. Among the reactive and non-reactive species, the hydroxyl radical (${\bullet}OH$) plays important role due to its higher oxidation potential (E0: 2.8 V). Therefore, in this work we have checked the degradation of various dyes such as methyl orange, methylene blue and congo red using different type of atmospheric pressure plasma sources (Indirect jet and direct jet). To check the degradation we have used the UV-visible spectroscopy, HPLC and LC-MS spectroscopy. Further, to estimate role of ${\bullet}OH$ on the degradation of dyes we have studied the molecular dynamic simulation.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1347-1348
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• 2007

In this paper, ITO gate electrode surface was modified using $O_2$ plasma and organic gate insulating layers were deposited on the ITO surface using plasma polymerization technique. In order to investigate the influence of the plasma coupling method and plasma conditions on the plasma polymerized methyl methacrylate (ppMMA) thin film properties, inductively coupled (ICP) and capacitively coupled plasma (CCP) were used to generate the plasma and the plasma parameters were varied. The ppMMAs were investigated using atomic force microscopy (AFM) and a Fourier Transform Infrared (FT-IR) spectroscopy. Dielectric constants of the ppMMA thin films were investigated using a impedance analyzer (HP4192A, LF Impedance Analyzer). Current-Voltage (I-V) characteristics of the organic thin film transistors (OTFTs) were investigated using a source measurement unit (SMU: Keithley 2612). Proposed method can be applied to dry-process to fabricate OTFTs during overall fabricating steps.