• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.341-341
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• 2016

The discovery of light emission in nanostructured silicon has opened up new avenues of research in nano-silicon based devices. One such pathway is the application of silicon quantum dots in advanced photovoltaic and light emitting devices. Recently, there is increasing interest on the silicon quantum dots (c-Si QDs) films embedded in amorphous hydrogenated silicon-nitride dielectric matrix (a-SiNx: H), which are familiar as c-Si/a-SiNx:H QDs thin films. However, due to the limitation of the requirement of a very high deposition temperature along with post annealing and a low growth rate, extensive research are being undertaken to elevate these issues, for the point of view of applications, using plasma assisted deposition methods by using different plasma concepts. This work addresses about rapid growth and single step development of c-Si/a-SiNx:H QDs thin films deposited by RF (13.56 MHz) and ultra-high frequency (UHF ~ 320 MHz) low-pressure plasma processing of a mixture of silane (SiH4) and ammonia (NH3) gases diluted in hydrogen (H2) at a low growth temperature ($230^{\circ}C$). In the films the c-Si QDs of varying size, with an overall crystallinity of 60-80 %, are embedded in an a-SiNx: H matrix. The important result includes the formation of the tunable QD size of ~ 5-20 nm, having a thermodynamically favorable <220> crystallographic orientation, along with distinct signatures of the growth of ${\alpha}$-Si3N4 and ${\beta}$-Si3N4 components. Also, the roles of different plasma characteristics on the film properties are investigated using various plasma diagnostics and film analysis tools.

• Korean Journal of Optics and Photonics
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• v.1 no.1
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• pp.65-72
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• 1990

Mather type plasma focus system is designed and fabricated, and its electrical behaviors and the ,~haracteristics of the plasma are investigated. The discharge CUlTent is measured with a Rogowski coil, and the external resistance and inductance of the system are found to be $20m\Omega, 0.2{\mu}H respectively from the measured voltage signals and current signals, and discharge inductance, magnetic, and mechanical energy are calculated. 'i'he speed of the plasma current sheath in the acceleration phase is found to vary as $P^{-0.25}\timesV^{0.38}$ and its value is about is 106 cm/sec. The electron temperature in the plasma is determined from the measurement of the X-ray transmittance with the number of X-ray filters and its value is found to be about I keY. The size of plasma, measured using X-ray pin-hole camera, is about 17 (dia.) x 30 (length)mm2. h)mm2.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05a
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• pp.131-134
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• 2005

PDP 방전 셀의 최적화 및 진공자외선 발광효율을 향상시키기 위한 목적으로 AC - PDP 미소방전에서 제논 여기종 원자의 밀도를 측정하는 레이저 흡수법을 개발하였다. 본 연구에서는 PDP 셀의 기체 압력을 350Torr, 제논 함량 10%로 고정하고, 전극 위에서의 여러 위치에서 준안정 준위 제논의 밀도를 흡수법으로 측정하였다. 실험 결과 제논 여기종의 밀도의 최대값은 전극의 위치(가장자리에서 안쪽으로의 거리)가 $50{\mu}m$, $120{\mu},\;150{\mu}m$ 일 때 $3.5{\times}10^{12}cm^{-3}$, $2.8{\times}10^{12}cm^{-3}$, $2.2{\times}10^{12}cm^{-3}$로 나타났다.

• Journal of fish pathology
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• v.21 no.2
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• pp.107-117
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• 2008

The pharmacokinetic properties of oxytetracycline (OTC) were studied after dipping and oral administration to cultured olive flounder, Paralichthys olivaceus (600 g). Plasma concentrations of OTC were determined after oral dosage (50, 100 and 200 mg/kg body weight) and dipping (50, 100 and 200 ppm, 1 h) in olive flounder (average 600 g, 23±1℃). Plasma samples were taken at 3, 5, 10, 15, 24, 32, 48, 72, 120, 168 and 240 h post-dose. In oral dosage of 50, 100 and 200 mg/kg, the peak plasma concentrations of OTC, which attained at 3 h post-dose, were 0.34, 0.44 and 1.18 ㎍/㎖, respectively. In dipping of 50, 100 and 200 ppm, those of OTC which also observed at 5 h post-dose, were 0.43, 0.38 and 0.64 ㎍/㎖, respectively. Plasma concentrations of OTC were not measurable at 240 h post-dose in all experiments. The kinetic profile of absorption, distribution and elimination of OTC in plasma were analyzed fitting to a one-compartment model by WinNonlin program. The following parameters were calculated for a single dosage of 50, 100 and 200 mg/kg body weight, respectively: AUC (the area under the concentration-time curve)=31.40, 28.07 and 32.97 ㎍∙h/㎖; T1/2 (half-life)􀆫0.89, 1.12 and 0.43 h; Tmax (time for maximum concentration)= 5.25, 3.70 and 7.30 h, Cmax (maximum concentration)=0.25, 0.38 and 0.61 ㎕/㎖. Following dipping at 50, 100 and 200 ppm, these parameters were AUC􀆫15.51, 14.63 and 19.72 ㎍∙h/㎖; T1/2= 0.75, 0.41 and 0.74 h; Tmax=4.90, 7.08 and 4.68 h, Cmax=0.40, 0.32 and 0.46 ㎕/㎖.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.05a
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• pp.54-54
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• 2003

MgO layer는 POP 패빌 내 유전증을 이온의 스퍼터링으로부터 보호하여 주며, 또한 높은 이차 전자 밤출 계수의 특성을 가지고 있어 구동 및 유지 전압을 낮춰 주는 역할을 한다. 그러나. MgO layer는 $H_20,{\;}CO_2,{\;}N_2,{\;}0_2$ 그리고 $H_2$와 같은 불순물 들을 쉽게 를착하는 단점이 있어, PDP의 특성 및 수명 단축에 영향을 줄 수 있다. 따라서, 본 연구에서는 atmospheric pressure plasma cleaning 과 low pressure i inductively coupled plasma (ICP) cleaning 처리에 의하여, 보호층으로 사용이 되는 MgO layer의 outgassing 특성을 조사하고자 한다. plasma cleaning에 의한 MgO layer 표면의 roughness와 불순물의 변화를 알아보기 위 하여 atomic force microscopy(AFM)과 x-ray p photoelectron spectroscopy(XPS)를 이용하여 측정 하였다. 또한, outgassing의 특성을 분석하기 위하여 MgO layer를 $400^{\circ}C$ 까지 온도를 가하여 온도에 따른 outgassing의 특성을 quadrupole mass spectrometer(QMS)를 이용하여 알아보았다. atmospheric pressure plasma cleaning 에서는 $He/O_2/Ar/N_2$의 gas를 사용하였으며, low pressure ICP cleaning 에 서는 Ar의 gas를 사용하였다. atmospheric pressure plasma cleaning는 low pressure ICP C cleaning과 비교해 더 낮은 outgassing을 관잘 할 수 있었으나. MgO 표면의 roughness는 low pressure ICP cleaning 후 더 낮은 것을 알 수 있었다. 또한 $He/O_2/Ar/N_2$의 gas를 사용 한 atmospheric pressure plasma cleaning 과 $Ar/O_2$의 gas를 사용한 ICP cleaning에서 이 차전자방출계수(SEEC)가 약 1.5~2.5배 증가된 것을 알 수 있었다.

• Nutrition Research and Practice
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• v.7 no.5
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• pp.393-399
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• 2013

Asian populations are thought to receive significant health benefits from traditional diets rich in soybeans due to high isoflavone contents. However, available epidemiologic data only weakly support this hypothesis. The present study was carried out to assess the pharmacokinetics of isoflavones in South Korean women after ingestion of soy-based foods. Twenty-six healthy female volunteers (20-30 y old) consumed three different soy products (i.e., isogen, soymilk, and fermented soybeans) with different aglycone/glucoside ratios. Plasma and urine isoflavone concentrations were measured by high-performance liquid chromatography (HPLC) after ingestion of one of the soy products. Pharmacokinetic parameters were determined using the WinNonlin program. The area under the curve (AUC) for plasma daidzein levels of the soymilk group ($2,101{\pm}352ng{\cdot}h/mL$) was significantly smaller than those of the isogen ($2,628{\pm}573ng{\cdot}h/mL$) and fermented soybean ($2,593{\pm}465ng{\cdot}h/mL$) groups. The maximum plasma concentration ($C_{max}$) of daidzein for the soymilk group ($231{\pm}44$ ng/mL) was significantly higher than those of the isogen ($160{\pm}32$ ng/mL) and fermented soybean ($195{\pm}35$ ng/mL) groups. The half-lives of daidzein and genistein in the soymilk group (5.9 and 5.6 h, respectively) were significantly shorter than those in the individuals given isogen (9.6 and 8.5 h, respectively) or fermented soybean (9.5 and 8.2 h, respectively). The urinary recovery rates of daidzein and genistein were 42% and 17% for the isogen group, 46% and 23% for the fermented soybean group, and 33% and 22% for the soymilk group. In conclusion, our data indicated that soy products containing high levels of isoflavone aglycone are more effective for maintaining plasma isoflavone concentrations. Additional dose-response, durational, and interventional studies are required to evaluate the ability of soy-based foods to increase the bioavailability of isoflavones that positively affect human health.

• Asian-Australasian Journal of Animal Sciences
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• v.20 no.8
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• pp.1182-1189
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• 2007

An intracerebroventricular (ICV) infusion of somatostatin 1-28 (SRIF) was used as a thirst-controlling peptide antagonist to investigate whether or not thirst-controlling peptides are involved in the significant decrease in feed intake during the initial stages of feeding large-type goats on dry forage. A continuous ICV infusion of SRIF was conducted at a small dose of $4{\mu}g$ ml/h for 27 h from day 1 to day 2. Goats (n = 5) were fed roughly crushed alfalfa hay cubes for 2 h twice daily and water was given ad libitum. Feed intake was measured during ICV infusion of artificial cerebrospinal fluid (ACSF) and SRIF. The feed intake during SRIF infusion increased significantly compared to that during ACSF infusion. In comparison to the ACSF treatment, plasma osmolality during the SRIF treatment significantly decreased during the first half of the 2 h feeding period. The factor causing the decrease in plasma osmolality during the ICV infusion of SRIF was a decrease in plasma Na, K, Cl, and Mg concentrations. In comparison to the ACSF infusion treatment, parotid saliva secretion volumes during the 2 h feeding period in the SRIF infusion treatment were significantly larger. While there was no significant difference in cumulative water intake (thirst levels) between the SRIF and the ACSF treatments upon conclusion of the 2 h feeding period, based on the plasma osmolality results it is thought that thirst level increases brought about by alfalfa hay cube feeding in the first half of the feeding period were reduced. It is thought that the somatostatin-induced increases in feed intake during the 2 h feeding period in the present experiment were caused by decreases in plasma osmolality brought about by the somatostatin infusion. As a result, it is suggested that the significant decrease in feed intake during the initial stages of feeding in large-type goats given roughly crushed alfalfa hay cubes, was due to the actions of thirst-controlling peptides.

• Proceedings of the Materials Research Society of Korea Conference
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• 1995.11a
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• pp.36-36
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• 1995

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.9
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• pp.616-621
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• 1999

A planar inductively coupled $CH_4/H_2/Ar$plasma was used to investigate dry etch characteristics of GaN as a function of input power, RF bias power, and etch gas composition. Etch rate of GaN increased with input power up to 600 W and was saturated at the higher power. Also, the etch rates increased with increasing RF bias power, composition of $CH_4$ and Ar gas. We achieved the maximum etch rate of $930{\AA}$/min at the input power 400 W, RF bias power 250 W, and operational pressure 10 mTorr. This paper shows that smooth etched surface having roughness less than 1 nm in rms can be obtained by using planar inductively coupled plasma with $CH_4/H_2/Ar$ gas chemistry.

• Journal of the Korean Vacuum Society
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• v.15 no.3
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• pp.259-265
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• 2006

We measured sputtering yield of RF $O_2-plasma$ treated MgO protective layer for AC-PDP(plasma display panel) using a Focused ion Beam System(FIB). A 10 kV acceleration voltage was applied. The sputtering yield of the untreated sample and the treated sample were 0.33 atoms/ion and 0.20 atoms/ion, respectively. The influence of the plasma-treatment of MgO thin film was characterized by XPS and AFM analysis. We observed that the binding energy of the O 1s spectra, the FWHM of O 1s spectra and the RMS(root-mean-square) of surface roughness decreased to 2.36 eV, 0.6167 eV and 0.32 nm, respectively.