• Proceedings of the Korean Vacuum Society Conference
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• 2004.08a
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• pp.228-228
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• 2004

• Proceedings of the Zoological Society Korea Conference
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• 2000.10a
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• pp.283.2-283
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• 2000

No Abstract, See Full Text

• The Korean Journal of Nuclear Medicine
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• v.6 no.2
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• pp.41-47
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• 1972

The radioimmunoassay of human thyrotropin was performed in various thyroid states, utilizing the anti-h-T.S.H. antibody and purified human thyrotropin supplied from National Institute of Arthritis and Metabolic Diseases, Bethesda, Ma., U.S.A., and human thyrotropin standard-A obtained from National Institute for Biologic Standards, Mill Hill, London, England. $^{131}I$ labelled h-TSH was prepared after the Chloramine-T method of Greenwood et al. This double antibody system had a assay sensitivity of about $1.0{\mu}U/ml$ of plasma HTS-A and could detect the plasma h-TSH level in the euthyroid patients. Plasma h-TSH level of the normal 26 Korean was $1.1{\pm}0.83{\mu}U/ml$, and that of the 8 hypothyroidisms were 8.3 to $67.5{\mu}U/ml$. In hyperthyroidisms, no cases showed the plasma h-TSH levels over $1.0{\mu}U/ml$. Between the hypothyroidism and euthyroidsm, no overlap is noticed on plasma h-TSH levels. A case of transient hypothyroid state identified by determination of plasma h-TSH level is presented. These results revealed that the radioimmunoassay of h-TSH in plasma could be a sensitive method to diagnose the hypothyroidsm, if not caused by a pituitary disease.

• 한국연소학회:학술대회논문집
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• 2002.06a
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• pp.157-162
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• 2002

The characteristics of DeNOx conversion process by plasma/post-heating system with the simulated gas containing ethene is investigated experimentally. Without plasma treatment, $NO-NO_2$ conversion doesn't occur by $400^{\circ}C$ in a mixture of $N_2/O_2$ with a trace gas of ethene. But $NO-NO_2$ conversion occurs as temperature increases above $400^{\circ}C$. The NO can, however, be converted to $NO_2$ at lower temperatures by treating the gas mixture with non-thermal plasma. The $NO-NO_2$ conversion enhances further by passing the plasma treated gas through the post-heating furnace. Results show that 20%${\sim}50%$ more conversion of NO to $NO_2$ is observed when the temperatures of the post-heating furnace are maintained at $300^{\circ}C$ or $400^{\circ}C$. The additional $NO-NO_2$ conversion by post-heating is due to the reaction of ethene with the byproducts or radicals generated from the plasma reaction.

• Asian-Australasian Journal of Animal Sciences
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• v.25 no.4
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• pp.502-514
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• 2012

When ruminants consume dry forage, they also drink large volumes of water. The objective of this study was to clarify which factor produced when feed boluses enter the rumen is mainly responsible for the marked increase in water intake in the second hour of the 2 h feeding period in large-type goats fed on dry forage for 2 h twice daily. Six large-type male esophageal- and ruminal-fistulated goats (crossbred Japanese Saanen/Nubian, aged 2 to 6 years, weighing $85.1{\pm}4.89kg$) were used in two experiments. In experiment 1, the water deprivation (WD) control and the water availability (WA) treatment were conducted to compare changes in water intake during and after dry forage feeding. In experiment 2, a normal feeding conditions (NFC) control and a feed bolus removal (FBR) treatment were carried out to investigate whether decrease in circulating plasma volume or increase in plasma osmolality is mainly responsible for the marked increase in water intake in the second hour of the 2 h feeding period. The results of experiment 1 showed that in the WA treatment, small amounts of water were consumed during the first hour of feeding while the majority of water intake was observed during the second hour of the 2 h feeding period. Therefore, the amounts of water consumed in the second hour of the 2 h feeding period accounted for 82.8% of the total water intake. The results of experiment 2 indicated that in comparison with the NFC control, decrease in plasma volume in the FBR treatment, which was indicated by increase in hematocrit and plasma total protein concentrations, was higher (p<0.05) in the second hour of the 2 h feeding period. However, plasma osmolality in the FBR treatment was lower (p<0.05) than compared to the NFC control from 30 min after the start of feeding. Therefore, thirst level in the FBR treatment was 82.7% less (p<0.01) compared with that in the NFC control upon conclusion of the 30 min drinking period. The results of the study indicate that the increased plasma osmolality in the second hour of the 2 h feeding period is the main physiological stimulating factor of water intake during and after dry forage feeding in large-type goats.

• Asian-Australasian Journal of Animal Sciences
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• v.15 no.3
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• pp.366-370
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• 2002

The objective of this study was to examine whether feeding induced hypovolemia (decrease in plasma volume) acts on the regulation of feed intake in goats fed on dry forage. In order to prevent feeding induced hypovolemia, a 2 h intravenous infusion (16-18 ml/min) of isotonic mannitol solution was begun 1 h prior to feeding and continued until 1 h after the start of the 2 h feeding period. The intravenous infusion of isotonic mannitol solution (MI) decreased plasma osmolality by 1.0%, plasma total protein concentration by 4.2% and hematocrit by 5.9%, respectively. In comparison with no infusion (NI), MI significantly decreased thirst level by approximately 13%. At the completion of the 2 h feeding period, cumulative feed intake had been increased by 43% by MI. In conclusion, feeding induced hypovolemia in goats fed on dry forage increased thirst level more than the increase in plasma osmolality did. The results demonstrate that feeding induced hypovolemia is one of the factors controlling feed intake in goats fed on dry forage.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.93-93
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• 2016

Large scale integrated circuits (LSIs) has been improved by the shrinkage of the circuit dimensions. The smaller chip sizes and increase in circuit density require the miniaturization of the line-width and space between metal interconnections. Therefore, an extreme precise control of the critical dimension and pattern profile is necessary to fabricate next generation nano-electronics devices. The pattern profile control of plasma etching with an accuracy of sub-nanometer must be achieved. To realize the etching process which achieves the problem, understanding of the etching mechanism and precise control of the process based on the real-time monitoring of internal plasma parameters such as etching species density, surface temperature of substrate, etc. are very important. For instance, it is known that the etched profiles of organic low dielectric (low-k) films are sensitive to the substrate temperature and density ratio of H and N atoms in the H2/N2 plasma [1]. In this study, we introduced a feedback control of actual substrate temperature and radical density ratio monitored in real time. And then the dependence of etch rates and profiles of organic films have been evaluated based on the substrate temperatures. In this study, organic low-k films were etched by a dual frequency capacitively coupled plasma employing the mixture of H2/N2 gases. A 100-MHz power was supplied to an upper electrode for plasma generation. The Si substrate was electrostatically chucked to a lower electrode biased by supplying a 2-MHz power. To investigate the effects of H and N radical on the etching profile of organic low-k films, absolute H and N atom densities were measured by vacuum ultraviolet absorption spectroscopy [2]. Moreover, using the optical fiber-type low-coherence interferometer [3], substrate temperature has been measured in real time during etching process. From the measurement results, the temperature raised rapidly just after plasma ignition and was gradually saturated. The temporal change of substrate temperature is a crucial issue to control of surface reactions of reactive species. Therefore, by the intervals of on-off of the plasma discharge, the substrate temperature was maintained within ${\pm}1.5^{\circ}C$ from the set value. As a result, the temperatures were kept within $3^{\circ}C$ during the etching process. Then, we etched organic films with line-and-space pattern using this system. The cross-sections of the organic films etched for 50 s with the substrate temperatures at $20^{\circ}C$ and $100^{\circ}C$ were observed by SEM. From the results, they were different in the sidewall profile. It suggests that the reactions on the sidewalls changed according to the substrate temperature. The precise substrate temperature control method with real-time temperature monitoring and intermittent plasma generation was suggested to contribute on realization of fine pattern etching.

• 전기의세계
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• v.27 no.3
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• pp.36-42
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• 1978

It has been investigates that electric characteristics of plasma electron beam in N$_{2}$, H$_{2}$ and Ar gas jars under various gas pressures during electron beams are formed. The results are as follows: 1)Electron beam is formed in the region of positive resistance on the characteristic curve. This phenomenon is identical in N$_{2}$, H$_{2}$ and Ar gases. 2)But in Ar gas, electron beam is formed at relatively lower gas pressure than in H$_{2}$ and N$_{2}$. 3)In pure gas either N$_{2}$, H$_{2}$ and N$_{2}$ the lower the gas pressure, the higher the voltage drop for the same electron beam current. 4)The region in which electron beam is formed is limited at a given pressure. 5)Beyond the limit mentioned above, it becomes glow discharge state and the current increases radically. 6)At a given gas pressure, electron beam voltage, that is, electrical power input increases with gap length.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.268-268
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• 2012

Atmospheric pressure microwave induced plasmas are used to excite and ionize chemical species for elemental analysis, for plasma reforming, and for plasma surface treatment. Microwave plasma differs significantly from other plasmas and has several interesting properties. For example, the electron density is higher in microwave plasma than in radio-frequency (RF) or direct current (DC) plasma. Several types of radical species with high density are generated under high electron density, so the reactivity of microwave plasma is expected to be very high [1]. Therefore, useful applications of atmospheric pressure microwave plasmas are expected. The surface characteristics of SUS304 stainless steel are investigated before and after surface modification by microwave plasma under atmospheric pressure conditions. The plasma device was operated by power sources with microwave frequency. We used a device based on a coaxial transmission line resonator (CTLR). The atmospheric pressure plasma jet (APPJ) in the case of microwave frequency (880 MHz) used Ar as plasma gas [2]. Typical microwave Pw was 3-10 W. To determine the optimal processing conditions, the surface treatment experiments were performed using various values of Pw (3-10 W), treatment time (5-120 s), and ratios of mixture gas (hydrogen peroxide). Torch-to-sample distance was fixed at the plasma edge point. Plasma treatment of a stainless steel plate significantly affected the wettability, contact angle (CA), and free energy (mJ/$m^2$) of the SUS304 surface. CA and ${\gamma}$ were analyzed. The optimal surface modification parameters to modify were a power of 10 W, a treatment time of 45 s, and a hydrogen peroxide content of 0.6 wt% [3]. Under these processing conditions, a CA of just $9.8^{\circ}$ was obtained. As CA decreased, wettability increased; i.e. the surface changed from hydrophobic to hydrophilic. From these results, 10 W power and 45 s treatment time are the best values to minimize CA and maximize ${\gamma}$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.2
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• pp.148-152
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• 2005

Atmospheric low-temperature plasma was produced using dielectric barrier discharge (DBD) plate-type plasma reactor and high frequency of 13.56 Hz. The surfaces of polyimide films for insulating and packaging materials were treated by the atmospheric low-temperature plasma. The contact angle of 67$^{\circ}$ was observed before the plasma treatment. The contact angle was decreased with deceasing the velocity of plasma treatment. In case of oxygen content of 0.2 %, electrode gap of 2 mm, the velocity of plasma treatment of 20 mm/sec, and input power of 400 W, the minimum contact angle of 13$^{\circ}$ was observed. The chemical characteristics of polyimide film after the plama treatment were investigated using X-ray photoelectron spectroscopy (XPS), and new carboxyl group bond was observed. The surfaces of polyimide films were changed into hydrophilic by the atmospheric low-temperature plasma. The polyimide films having hydrophilic surface will be very useful as a packaging and insulating materials in electronic devices.