• Journal of the Microelectronics and Packaging Society
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• v.16 no.3
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• pp.31-37
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• 2009

Cu-Cu thermo-compression bonding process was successfully developed as functions of the $N_2+H_2$ forming gas annealing conditions before and after bonding step in order to find the low temperature bonding conditions of 3-D integrated technology where the quantitative interfacial adhesion energy was measured by 4-point bending test. While the pre-annealing with $N_2+H_2$ gas below $200^{\circ}C$ is not effective to improve the interfacial adhesion energy at bonding temperature of $300^{\circ}C$, the interfacial adhesion energy increased over 3 times due to post-annealing over $250^{\circ}C$ after bonding at $300^{\circ}C$, which is ascribed to the effective removal of native surface oxide after post-annealing treatment.

• Journal of the Korean Ceramic Society
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• v.27 no.6
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• pp.755-762
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• 1990

The tungsten paste was printed on the surface of 92% alumina sheet which was made by type casting process. The printed tungsten was bonded on the Al2O3 by co-firing in reducing atmosphere. During the co-firing, the binder burn-out was easier in wet H2 atmosphere than in dry H2, which affected sintered density. In practically, the use of wet H2 above 100$0^{\circ}C$ was beneficial for density of alumina and bond strength. This phenomena occured more distinctly when atmosphere varied from dry H2 to wet H2 than varied dew point in wet H2. In wet H2, the improvement in bonding strength can be attributed to good glass migration into the metal layer due to inhibition of the tungsten particle growth, with increase of alumina density, at the temperatrue higher than 100$0^{\circ}C$.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2009.10a
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• pp.261-262
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• 2009

• Bulletin of the Korean Chemical Society
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• v.33 no.5
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• pp.1551-1555
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• 2012

Second-order rate constants ($k_N$) have been measured spectrophotometrically for the reactions of benzyl 2-pyridyl carbonate $\mathbf{7}$ and $t$-butyl 2-pyridyl carbonate $\mathbf{8}$ with a series of alicyclic secondary amines in $H_2O$ at $25.0^{\circ}C$. Substrate $\mathbf{8}$ is less reactive than $\mathbf{7}$. Steric hindrance exerted by the bulky $t$-Bu group of $\mathbf{8}$ has been suggested to be responsible for the decreased reactivity. The Br${\o}$nsted-type plots for the reactions of $\mathbf{7}$ and $\mathbf{8}$ are linear with ${\beta}_{nuc}=0.49$ and 0.44, respectively, which is typical for reactions reported previously to proceed through a concerted mechanism. Aminolyses of $\mathbf{7}$ and $\mathbf{8}$ were expected to proceed through a zwitterionic tetrahedral intermediate $T^{\pm}$, which would be stabilized through an intramolecular H-bonding interaction. However, the kinetic results suggest that the reactions proceed through a concerted mechanism. The H-bonding interaction in $T^{\pm}$ has been suggested to accelerate the rate of leaving-group expulsion from $T^{\pm}$. Another factor that might accelerate expulsion of the leaving group is the "push" provided by the RO group in $T^{\pm}$ through resonance interactions. Thus, it has been concluded that the enhanced nucleofugality through the H-bonding interaction and the "push" provided by the RO group forces the reactions to proceed through a concerted mechanism.

• Proceedings of the KIEE Conference
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• 1999.07g
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• pp.3310-3312
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• 1999

We have studied the method of silicon direct bonding using the mixture of $HNO_$, $H_2O_2$, and HF chemicals called the controlled slight etch (CSE) solution for the effective wafer cleaning. CSE, two combinations of oxidizing and etching agents, have been used to clean the silicon surfaces prior to wafer bonding. Two wafers of silicon and silicon dioxide were contacted each other at room temperature and postannealed at $300{\sim}1100^{\circ}C$ in $N_2$ ambient for 2.5 h. We have cleaned silicon wafers with the various HF concentrations and characterized the parameters with regard to surface roughness, chemical nature, chemical oxide thickness, and bonding energy. It was observed that the chemical oxide thickness on silicon wafer decreased with increasing HF concentrations. The initial interfacial energy and final energy postannealed at $1100^{\circ}C$ for 2.5h measured by the crack propagation method was 122 $mJ/m^2$ and 2.96 $mJ/m^2$, respectively.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2001.05a
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• pp.250-253
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• 2001

Mechanical properties of gold bonding wire for VLSI packaging have been studied. The diameters of gold wires are about 20-30 micrometer and fracture loads are 8-20 gram force. The elastic modulus, yield strength, fracture strength and elongation properties have been evaluated by micro-tensile test method. This work discusses for an appropriate selection of micro-force testing system and grip design in mim testing. The best method to determine gauge length of wire and to measure tensile properties has been proposed. The mechanical properties such as strength and elastic modulus of current gold bonding wire are higher than pure those of gold wire.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.828-831
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• 2001

A simple and versatile method of manufacturing semiconductor devices with pn-junctions used the silicon direct bonding technology with simultaneous impurity diffusion is suggested . Formation of p- or n- type layers was tried during the bonding procedure by attaching two wafers in the aqueous solutions of Al(NO$_3$)$_3$, Ga(NO$_3$)$_3$, HBO$_3$, or H$_3$PO$_4$. An essential improvement of bonding interface structural quality was detected and a model for the explanation is suggested. Diode, Dynistor, and BGGTO structures were fabricated and examined. Their switching characteristics are presented.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.306-307
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• 2006

The sinter-bonding behavior of iron based powder mixtures was investigated. To produce the green compacts to be joined the following powders based on $H{\ddot{o}}gan{\ddot{a}}s$ AB grade NC 100.24 plain iron powder were used: NC 100.24 as delivered, PNC 30, PNC 60 and NC 100.24 + 4%Cu powder mixtures. Dimensional behaviour of all those materials during the sintering cycle was monitored by dilatometry. Simple ring shaped specimens as the outer parts and cylindrical as the inner parts were pressed. The influence of parts' composition on joining strength was established. Diffusion of alloying elements: copper and phosphorous, across the bonding surface was controlled by metallography, SEM and microanalysis.

• Journal of the Korean Chemical Society
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• v.55 no.3
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• pp.385-391
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• 2011

The time-dependent density functional theory (TDDFT) method has been carried out to investigate the excitedstate hydrogen-bonding dynamics of phenol-$(H_2O)_2$ complex. The geometric structures and infrared (IR) spectra in ground state and different electronically excited states ($S_1$ and $T_1$) of the hydrogen-bonded complex have been calculated using the density functional theory (DFT) and TDDFT method. A ring of three hydrogen bonds is formed between phenol and two water molecules. We have demonstrated that the intermolecular hydrogen bond $O_1-H_2{\cdots}O_3-H$ of the three hydrogen bonds is strengthened in $S_1$ and $T_1$ states. In contrast, the hydrogen bond $O_5-H_6{\cdots}O_1-H$ is weakened in $S_1$ and $T_1$ states. These results are obtained by theoretically monitoring the changes of the bond lengths of the hydrogen bonds and hydrogen-bonding groups in different electronic states. The hydrogen bond $O_1-H_2{\cdots}O_3-H$ strengthening in both the $S_1$ and $T_1$ states is confirmed by the calculated stretching vibrational mode of O-H (phenol) being red-shifted upon photoexcitation. The hydrogen bond strengthening and weakening behavior in electronically excited states may exist in other ring structures of phenol-$(H_2O)_n$.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.05a
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• pp.615-616
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• 2010