• Journal of Ginseng Research
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• v.40 no.2
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• pp.185-195
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• 2016

Background: To investigate the effect of pectinase-treated Panax ginseng (GINST) in cellular and male subfertility animal models. Methods: Hydrogen peroxide ($H_2O_2$)-induced mouse spermatocyte GC-2spd cells were used as an in vitro model. Cell viability was measured using MTT assay. For the in vivo study, GINST (200 mg/kg) mixed with a regular pellet diet was administered orally for 4 mo, and the changes in the mRNA and protein expression level of antioxidative and spermatogenic genes in young and aged control rats were compared using real-time reverse transcription polymerase chain reaction and western blotting. Results: GINST treatment ($50{\mu}g/mL$, $100{\mu}g/mL$, and $200{\mu}g/mL$) significantly (p < 0.05) inhibited the $H_2O_2$-induced ($200{\mu}M$) cytotoxicity in GC-2spd cells. Furthermore, GINST ($50{\mu}g/mL$ and $100{\mu}g/mL$) significantly (p < 0.05) ameliorated the $H_2O_2$-induced decrease in the expression level of antioxidant enzymes (peroxiredoxin 3 and 4, glutathione S-transferase m5, and glutathione peroxidase 4), spermatogenesis-related protein such as inhibin-${\alpha}$, and specific sex hormone receptors (androgen receptor, luteinizing hormone receptor, and follicle-stimulating hormone receptor) in GC-2spd cells. Similarly, the altered expression level of the above mentioned genes and of spermatogenesis-related nectin-2 and cAMP response element-binding protein in aged rat testes was ameliorated with GINST (200 mg/kg) treatment. Taken together, GINST attenuated $H_2O_2$-induced oxidative stress in GC-2 cells and modulated the expression of antioxidant-related genes and of spermatogenic-related proteins and sex hormone receptors in aged rats. Conclusion: GINST may be a potential natural agent for the protection against or treatment of oxidative stress-induced male subfertility and aging-induced male subfertility.

• Journal of Radiation Protection and Research
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• v.18 no.2
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• pp.71-79
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• 1993

Form the pure Maxwellian distribution(kT= 1.42MeV), the effects upon calibration factors of encapsulating a $^{252}Cf$ spontaneous fission neutron source were investigated to establish a standard neutron field in the Secondary Standard Dosimetry Laboratory at Korea Atomic Energy Research Institute(KAERI). A Monte Carlo code MCNP was used in simulating the encapsulation SR-Cf-100 and SR-Cf-1273 to be real conditions. The anisotropy(FI) and fluence-to-dose equivalents conversion factors$(H/{\Phi})$ were evaluated and compared with other results. As the results, the FI was determined to be 1.061 at ${\theta}=90^{\circ}$ with ${\pm}0.2%$ statistical error and the $(H/{\Phi})$ was evaluated to be $333.9 [pSv\;cm^2]\;with\;{\pm}0.5%$ statistical error, which is lower by 1.8% than that recommended by the ISO 8529. This means physically that the neutron spectrum of the unmoderated $^{252}Cf$ source in KAERI is a little more softened than that by the ISO.

• Korean Journal of Materials Research
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• v.26 no.8
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• pp.430-437
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• 2016

Aluminum oxide ($Al_2O_3$) thin films were grown by atomic layer deposition (ALD) using a new Al metalorganic precursor, dimethyl aluminum sec-butoxide ($C_{12}H_{30}Al_2O_2$), and water vapor ($H_2O$) as the reactant at deposition temperatures ranging from 150 to $300^{\circ}C$. The ALD process showed typical self-limited film growth with precursor and reactant pulsing time at $250^{\circ}C$; the growth rate was 0.095 nm/cycle, with no incubation cycle. This is relatively lower and more controllable than the growth rate in the typical $ALD-Al_2O_3$ process, which uses trimethyl aluminum (TMA) and shows a growth rate of 0.11 nm/cycle. The as-deposited $ALD-Al_2O_3$ film was amorphous; X-ray diffraction and transmission electron microscopy confirmed that its amorphous state was maintained even after annealing at $1000^{\circ}C$. The refractive index of the $ALD-Al_2O_3$ films ranged from 1.45 to 1.67; these values were dependent on the deposition temperature. X-ray photoelectron spectroscopy showed that the $ALD-Al_2O_3$ films deposited at $250^{\circ}C$ were stoichiometric, with no carbon impurity. The step coverage of the $ALD-Al_2O_3$ film was perfect, at approximately 100%, at the dual trench structure, with an aspect ratio of approximately 6.3 (top opening size of 40 nm). With capacitance-voltage measurements of the $Al/ALD-Al_2O_3/p-Si$ structure, the dielectric constant of the $ALD-Al_2O_3$ films deposited at $250^{\circ}C$ was determined to be ~8.1, with a leakage current density on the order of $10^{-8}A/cm^2$ at 1 V.

• Korean Journal of Medicinal Crop Science
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• v.21 no.3
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• pp.213-219
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• 2013

This study was carried out to find out the optimum method of preparation of indigo standard solution and its stability, and to investigate the indigo contents in Niram, blue dye extract, from a total of 7 indigo plants and 34 breeding lines of Persicaria tinctoria H. Gross. Proper solvent for indigo standard was dimethyl sulfoxide (DMSO), and appropriate concentration was 1 mg of indigo in 10 mL of DMSO. Absorbance value of UV/Vis Spectrophotometer at 620 nm of standard solution was changed decreasingly 12 hours after the preparation of standard solution irrespective of the storage conditions such as temperature and light. Average value of absorbance of 8-fold diluted standard solutions prepared daily during 16 days was $0.210{\pm}0.005$, indicating the powder of indigo compound was stable chemically. Calibration curve was made for quantitative analysis of indigo of 7 Niram samples, and indigo contents ranged from 0.69% to 18.76% showing relatively larger variation. Across all 34 breeding lines, the range of indigo content was from 7.9 mg to 56.4 mg per 100 g of fresh leaves, averaging 25.2 mg of indigo content and showing a 47.7% coefficient of variation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.111-111
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• 2007

Further scaling the semiconductor devices down to low dozens of nanometer needs the extremely shallow depth in junction and the intentional counter-doping in the silicon gate. Conventional ion beam ion implantation has some disadvantages and limitations for the future applications. In order to solve them, therefore, plasma source ion implantation technique has been considered as a promising new method for the high throughputs at low energy and the fabrication of the ultra-shallow junctions. In this paper, we study about the effects of DC bias and base pressure as a process parameter. The diluted mixture gas (5% $PH_3/H_2$) was used as a precursor source and chamber is used for vacuum pressure conditions. After ion doping into the Si wafer(100), the samples were annealed via rapid thermal annealing, of which annealed temperature ranges above the $950^{\circ}C$. The junction depth, calculated at dose level of $1{\times}10^{18}/cm^3$, was measured by secondary ion mass spectroscopy(SIMS) and sheet resistance by contact and non-contact mode. Surface morphology of samples was analyzed by scanning electron microscopy. As a result, we could accomplish the process conditions better than in advance.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.162-162
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• 2000

We have studied magnetic properties of Co/Pt multilayered films which have attracted great interest as high-density magneto-optical (MO) recording media due to their good MO properties. For this study, [Pt(45 )/Co(35 )]$\times$8 films were deposited with a Pt buffer layer of 60 on Si(100) substrate by alternating electron-beam evaporation in a high vacuum and were ion beam mixed by using 80keV Ar+ at 25$0^{\circ}C$. Especially, an external magnetic field was added to help changing magnetic property during ion beam mixing (IBM). The intermixing of Co and Pt layers after IBM was confirmed with Rutherford Backscattering Spectroscopy (RBS) and Transmission Electron Microscopy (TEM). The MO property of the film was measured with magneto-optical Kerr spectrometer and the change of magnetic easy axis in the film plane was observed from Ker loop data. This anomalous result might be correlated with the change of atomic structure due to the intermixing effect.

• Food Science and Biotechnology
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• v.17 no.4
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• pp.766-771
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• 2008

The proteolytic enzyme from Saccharomyces sp. B101 was purified to homogeneity by ammonium sulfate fractionation, ultrafiltration, diethyl aminoethyl (DEAE)-Sephadex A-50 ion-exchange chromatography, and Sephadex G-100 gel filtration chromatography from the culture supernatant of Saccharomyces sp. B101. The specific activity and the purification fold of the purified enzyme were 4,688.9 unit/mg and 18, respectively. The molecular weight of the purified enzyme was estimated to be 33 kDa by sodium dodecylsulfate-polyacrylamide gel electrophoresis (SDS-PAGE). The optimum pH and temperature for the enzyme activity were pH 8.5 and $30^{\circ}C$, respectively. The enzyme activity was relatively stable in the pH range of 6.5-8.5 at below $35^{\circ}C$. The salt-tolerance and stability for the enzyme activity were relatively stable even at NaCl concentrations of 10 and 15%. The activity of enzyme was inhibited by $Ag^{2+}$ and $Fe^{2+}$, and activated by $Mn^{2+}$. In addition, the enzyme activity was potently inhibited by ethylenediaminetetraacetic acid (EDTA) and phenylmethyl sulfonylfluoride (PMSF). Based on these findings we concluded that the purified enzyme was a serine protease. Km and Vmax values for hammastein milk casein were 1.02 mg/mL and 278.38 unit/mL, respectively.

• Journal of Ginseng Research
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• v.41 no.4
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• pp.578-588
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• 2017

Background: Elevated testicular temperature disrupts spermatogenesis and causes infertility. In the present study, the protective effect of enzymatically biotransformed Panax ginseng Meyer by pectinase (GINST) against chronic intermittent heat stress-induced testicular damage in rats was investigated. Methods: Male Sprague-Dawley rats (4 wk old, 60-70 g) were divided into four groups: normal control (NC), heat-stress control (HC), heat-stress plus GINST-100 mg/kg (HG100), and heat-stress plus GINST-200 mg/kg (HG200) treatment groups. Each dose of GINST (100 mg/kg and 200 mg/kg) was mixed separately with a regular pellet diet and was administered orally for 24 wk. For inducing heat stress, rats in the NC group were maintained at $25^{\circ}C$, whereas rats in the HC, HG100, and HG200 groups were exposed to $32{\pm}1^{\circ}C$ for 2 h daily for 6 mo. At week 25, the testes and serum from each animal were analyzed for various parameters. Results: Significant (p < 0.01) changes in the sperm kinematic values and blood chemistry panels were observed in the HC group. Furthermore, spermatogenesis-related molecules, sex hormone receptors, and selected antioxidant enzyme expression levels were also altered in the HC group compared to those in the NC group. GINST (HS100 and HS200) administration significantly (p < 0.05) restored these changes when compared with the HC group. For most of the parameters tested, the HG200 group exhibited potent effects compared with those exhibited by the HG100 group. Conclusion: GINST may be categorized as an important medicinal herb and a potential therapeutic for the treatment of male subfertility or infertility caused by hyperthermia.

• Journal of Sensor Science and Technology
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• v.9 no.2
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• pp.113-119
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• 2000

In this work, Pd/Pt gate MISFET sensor using Pd membrane was fabricated to detect the hydrogen in DI water. A differential pair-type was used to minimize the intrinsic voltage drift of the MISFET. To avoid hydrogen induced drift of the sensor, the silicon dioxide/silicon nitride double layer was used as the gate insulator of the FET's. In order to eliminate the blister formation on the surface of the hydrogen sensing gate metal, Pd/Pt double metal layer was deposited on the gate insulator. For this type of application sensors need to be isolated from the DI water, and a Pd membrane was used to separate the sensor from the DI water. The output voltage change due to the variation of hydrogen concentration is linear from 100ppm to 500 ppm.

• Progress in Superconductivity
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• v.12 no.2
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• pp.75-81
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• 2011

We report on the progress that has been made in developing $MgB_2$ superconducting wires and tapes for commercialization and research efforts. A number of techniques have been developed to overcome the obstacle posed by the poor critical current density ($J_c$) of pristine $MgB_2$. Chemical doping has proved to be the effective way to modify and enhance the superconducting properties, such as the $J_c$ and the irreversibility field ($B_{irr}$). More than 100 different types of dopants have been investigated over the past 8 years. Among these, the most effective dopants have been identified to be SiC and malic acid ($C_4H_6O_5$). The best results, viz. a $B_{irr}$ of 22 T and $J_c$ of $30,000\;A{\cdot}cm^{-2}$ at 4.2 K and 10 T, were reported for malic acid doped $MgB_2$ wires, which matched the benchmark performance of commercial low temperature superconductor wires. In this work, we discuss the progress made in $MgB_2$ conductors over the past few years at the University of Wollongong, Hyper Tech Research, Inc., and Ohio State University.