• Journal of the Korean Magnetics Society
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• v.7 no.6
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• pp.299-307
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• 1997

NdFeB films have been grown onto Si(100) substrate by a KrF pulsed laser ablation of the targets of $Nd_xFe_{90.98-x}B_{9.02}$ (x=17.51~27.51) at the substrate temperature of 620~700 $^{\circ}C$ and the laser beam energy density of 2.75~5.99 J/$\textrm{cm}^2$. The films exhibit no preferred orientation, however, good hard magnetic properties were produced from as-deposited condition : $4{\pi}M_s$=7 kG, $4{\pi}M_r$=4 kG, and $H_c$=300~1000 Oe. The depositon rate was not greatly influenced by changing the substrate temperature, but it increases linearly by increasing the beam energy density. The beam energy density of 3 J/$\textrm{cm}^2$ gave the optimal condition to have the highest $4{\pi}M_r$ and $H_c$ as well. The higher content of Nd induces a higher coercivity and $4{\pi}M_r$ at the same time without prominent change in $4{\pi}M_s$.

• Journal of the Korean Vacuum Society
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• v.6 no.4
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• pp.348-353
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• 1997

Hydrogenated amorphous carbon(a-C:H) films were deposited on p-type Si(100) by DC saddle-field plasma enhanced CVD to investigate the effect of substrate bias on optical properties and structural changes. They were deposited using pure methane gas at a wide range of substrate bias at room temperature and 90 mtorr. The substrate bias voltage ($V_s$) was employed from $V_s=0 V$ to $V_s=400 V$. The information of optical properties was investigated by photoluminescence and transmitance. Chemical bondings of a-C:H have been explored from FT-IR and Raman spectroscopy. The thickness and relative hydrogen content of the films were measured by Rutherford backscattering spectroscopy (RBS) and elastic recoil detection (ERD) technigue. The growth rate of a-C:H film was decreased with the increase of $V_s$, but the hydrogen content of the film was increased with the increase of $V_s$. The a-C:H films deposited at the lowest $V_s$ contain the smallest amount of hydrogen with most of C-H bonds in the of $CH_2$ configuration, whereas the films produced at higher $V_s$ reveal dominant the $CH_3$ bonding structure. The emission of white photoluminescence from the films were observed even with naked eyes at room temperature and the PL intensity of the film has the maximum value at $V_s$=200 V. With $V_s$ lower than 200 V, the PL intensity of the film increased with V, but for V, higher than 200 V, the PL intensity decreased with the increase of $V_s$. The peak energy of the PL spectra slightly shifted to the higher energy with the increase of $V_s$. The optical bandgap of the film, determined by optical transmittance, was increased from 1.5 eV at $V_s$=0V to 2.3 eV at $V_s$=400 V. But there were no obvious relations between the PL peak and the optical gap which were measured by Tauc process.

• Korean Chemical Engineering Research
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• v.46 no.2
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• pp.291-300
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• 2008

Catalytic cracking of n-octane was carried out over H-ZSM-5 zeolite catalysts after calcination with air and steaming with 100% steam in the temperature range of $550-750^{\circ}C$ for 24 h and compared with the results of thermal cracking. The increase of calcination and steaming temperature resulted in the decrease of surface area, pore volume, and strong acid sites, which was mainly caused by the dealumination of H-ZSM-5 framework. It was found by $^{27}Al$ and $^{29}Si$ MAS NMR that the dealumination was proceeded through the transformation process of tetrahedral framework Al${\rightarrow}$penta-cordinated Al ${\rightarrow}$ octahedral framework Al and the phenomena was much more severe in steaming conditions than that of calcination. In the catalytic cracking of n-octane, as the temperatures of calcination and steaming were increased, the conversion of n-octane, the selectivity of light olefins and ethylene to propylene ratio were decreased due to the dealumination of framework aluminum resulting the loss of acidic strengths. The conversion, selectivity of light olefins and ethylene to propylene ratio reached almost to the level of thermal cracking after steaming at $750^{\circ}C$ for 24 h.

• Journal of the Korean Electrochemical Society
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• v.13 no.2
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• pp.116-122
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• 2010

A $Cu_3Si$ film electrode is obtained by Si deposition on a Cu foil using DC magnetron sputtering, which is followed by annealing at $800^{\circ}C$ for 10 h. The Si component in $Cu_3Si$ is inactive for lithiation at ambient temperature. The linear sweep thermammetry (LSTA) and galvano-static charge/discharge cycling, however, consistently illustrate that $Cu_3Si$ becomes active for the conversion-type lithiation reaction at elevated temperatures (> $85^{\circ}C$). The $Cu_3Si$ electrode that is short-circuited with Li metal for one week is converted to a mixture of $Li_{21}Si_5$ and metallic Cu, implying that the Li-Si alloy phase generated at 0.0 V (vs. Li/$Li^+$) at the quasi-equilibrium condition is the most Li-rich $Li_{21}Si_5$. However, the lithiation is not extended to this phase in the constant-current charging (transient or dynamic condition). Upon de-lithiation, the metallic Cu and Si react to be restored back to $Cu_3Si$. The $Cu_3Si$ electrode shows a better cycle performance than an amorphous Si electrode at $120^{\circ}C$, which can be ascribed to the favorable roles provided by the Cu component in $Cu_3Si$. The inactive element (Cu) plays as a buffer against the volume change of Si component, which can minimize the electrode failure by suppressing the detachment of Si from the Cu substrate.

• Particle and aerosol research
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• v.8 no.4
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• pp.173-180
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• 2012

SiC particles, 8.3 ${\mu}m$ in volume average diameter, were chlorinated in an alumina tubular reactor, 2.4 cm in diameter and 32 cm in length, with reactor temperature varied from 100 to $1200^{\circ}C$. The flow rate of the gas admitted to the reactor was held constant at 300 cc/min, the mole fraction of chlorine in the gas at 0.1 and the reaction time at 4 h. The chlorination was negligibly small up to the temperature of $500^{\circ}C$. Thereafter, the degree of chlorination increased remarkably with increasing temperature until $900^{\circ}C$. As the temperature was increased further from 900 to $1200^{\circ}C$, the increments in chlorination degree were rather small. At $1200^{\circ}C$, the chlorination has nearly been completed. The surface area of the residual carbon varied with chlorination temperature in a manner similar to that with the variation of chlorination degree with temperature. The surface area at $1200^{\circ}C$ was 912 $m^{2}/g$. A simple model was developed to predict the conversion of a SiC under various conditions. A Langmuir-Hinshelwood type rate law with two rate constants was employed in the model. Assuming that the two rate constants, $k_{1}$ and $k_{2}$, can be expressed as $A_{1e}^{-E_{1}/RT}$ and $A_{2e}^{-E_{2}/RT}$, the four parameters, $A_{1}$, $E_{1}$, $A_{2}$, and $E_{2}$ were determined to be 32.0 m/min, 103,071 J/mol, 2.24 $m^{3}/mol$ and 39,526 J/mol, respectively, through regression to best fit experimental data.

• Horticultural Science & Technology
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• v.32 no.2
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• pp.142-148
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• 2014

Effect of silicon (Si) nutrition on growth and temperature stress tolerance of Nephrolepis exaltata 'Corditas' grown in a soilless substrate was examined. In vitro-grown acclimatized plantlets were transplanted into the pots containing a coir-based substrate. A nutrient solution containing 0, 50, or $100mg{\cdot}L^{-1}$ Si was supplied through a drip-irrigation system. After 5 months of cultiv ation, S i-treated and -untreated p lants were grown at 10, 25, or $40{\pm}1^{\circ}C$ under a 12 h photoperiod with $530{\mu}mol{\cdot}m^{-2}{\cdot}s^{-1}$ PPFD and 60% RH. After 7 days, chlorophyll content and chlorophyll fluorescence parameters were measured. Silicon nutrition had a negative effect on growth characteristics of N. exaltata 'Corditas'. However, Si-treated plants had more tolerance to temperature stress than the control plants. The Fv/Fm value was not significantly different when the plants were exposed to $25^{\circ}C$. However, significant difference in Fv/Fm was recorded when plants were exposed to 10 or $40^{\circ}C$. Thus, Fv/Fm could be used as an indicator of low and high temperature tolerance in ferns. The present study also suggests that application of Si may be used to enhance temperature tolerance of ferns.

• Korean Journal of Materials Research
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• v.14 no.12
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• pp.863-869
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• 2004

The purpose of this research is to investigate the mechanical property and ductile-brittle transition temperature of Ti-Nb-P added extra low carbon interstitial free steel having a tensile strength of 440 MPa. The mechanical property and transition temperature of hot rolled steel sheets were more influenced by the coiling temperature rather than by the small amount of alloying element. Further, at the same composition, the property of the specimen coiled at low temperature was superior to that obtained at higher coiling temperature. The fracture surface of 0.005C-0.2Si-1.43Mn steel coiled at $630^{\circ}C$ showed a ductile fracture mode at $-100^{\circ}C$, but coiling at $670^{\circ}C$ showed a transgranular brittle fracture mode at $-90^{\circ}C$. The galvannealed 0.006C-0.07Si-1.33Mn steel sheet annealed at $810^{\circ}C$ has tensile strength and elongation of 442.8 MPa and $36.6\%$, respectively. The transition temperature of galvannealed 0.006C-0.07Si-1.33Mn steel sheet was increased with a drawing ratio, and the transition temperature of the galvannealed 0.006C-0.07Si-1.33Mn steel was $-60^{\circ}C$ at a drawing ratio of 1.8

• Korean Journal of Agricultural and Forest Meteorology
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• v.1 no.1
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• pp.52-59
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• 1999

Vegetation canopy plays an important role in $CO_2$/$H_2$O exchange between the biosphere and the atmosphere by controlling leaf stomata. In this study, rice (Oryza sativa L.), a staple crop in Asia was investigated to formulate its single leaf model of photosynthesis and stomatal conductance. Photosynthesis and stomatal conductance were measured with a portable infrared gas analyzer system. Other plant and meteorological variables were also measured. To evaluate empirical constants in this biochemical leaf model, nonlinear least squares technique was used. The maximum catalytic activity of enzyme and the maximum rate of electron transport were $ 100\mu$㏖ $m^{-2}$ $s^{-1}$ and $140 \mu$㏖ m$^{-2}$ s$^{-1}$ (@ 35$^{\circ}C$), respectively. The empirical constants, m and b, associated with stomatal conductance model were 9.7 and $0.06 m^{-2}$ $s^{-1}$ , respectively. On a leaf scale, agreements between the modeled and the measured values of photosynthesis and stomatal conductance were on average within 20%, and the simulation of diurnal variation was also satisfactory On a canopy scale, the Simple Biosphere model(SiB2) was tested using the derived parameters. The modeled energy fluxes were compared against the micrometeorologically measured fluxes over a rice canopy. Agreements between the modeled and the measured values of net radiation, sensible heat and latent heat fluxes, and $CO_2$ flux (i.e., net canopy photosynthesis) were on average within 25%.

• Journal of Ocean Engineering and Technology
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• v.21 no.6
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• pp.95-100
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• 2007

In the present work, silicon nitride was fabricated with $Y_3Al_5O_{12}$ as a sintering additive and its mechanical properties were investigated. Silicon nitride with 3, 5, and 7wt% of $Y_3Al_5O_{12}$ was prepared and sintered by a Hot Pressing (HP) technique at 1750 and $1800^{\circ}C$ for 2 h. The process was performed under different process pressures of 30 and 45 MPa. Mechanical properties (density, strength, hardness, and fracture toughness) were investigated as a function of the $Y_3Al_5O_{12}$ content in $Si_3N_4$. $Si_3N_4\;-Y_3Al_5O_{12}$ ceramics showing similar mechanical properties compared with $Si_3N_4-Y_2O_3-Al_2O_3$ ceramics. But its high temperature strength was considerably higher than that of $Si_3N_4-Y_2O_3-Al_2O_3$ ceramics.

• Korean Journal of Materials Research
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• v.14 no.12
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• pp.835-839
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• 2004

The diamond thin films was deposited on Si(100) substrate by Hot Filament Chemical Vapor Deposition (HFCVD) method using supplied the $CH_{3}OH/H_{2}O$ mixtured gas with excess H_{2} gas. The role of hydrogen ion as the growth mechanism of the diamond deposit was examined and compared the $CH_{3}OH/H_{2}O$ with the $CH_4/H_2$. Pressures in the range of $1.1\sim290{\times}10^2$ Pa were applied and using $3.4\sim4.4$ kw power. It was investigated by Scanning Electron Microscopy(SEM) and Raman spectroscopy The H ion was etching the graphite and restrained from $sp^3\;to\;sp^2$. But excess $H_2$ gas was not helped diamond deposit using $CH_{3}OH/H_{2}O$ mixtured gas. It was shown that the role of hydrogen ion of deposited diamond films using $CH_{3}OH/H_{2}O$ was different from $CH_4/H_2$.