• Proceedings of the Korean Vacuum Society Conference
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• 2009.02a
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• pp.227.1-227.1
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• 2009

• Proceedings of the Korean Vacuum Society Conference
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• 2005.08a
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• pp.53-53
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• 2005

• Journal of the Korean Ceramic Society
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• v.30 no.11
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• pp.979-985
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• 1993

Diamond films were synthesized using CH4-H2-Ar mixture gases by MWCVD, and cutting ability was tested after brazing them onto WC tools. Growth rates were in the range of 0.5~10${\mu}{\textrm}{m}$/hr depending on the deposition conditions, and diamond films with thickness of 100~300${\mu}{\textrm}{m}$ were obtained. Diamond tools brazed by RF induction method showed an enhanced cutting ability in the cutting test of Si single crystal rod.

• Resources Recycling
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• v.25 no.3
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• pp.49-54
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• 2016

In this study, zircon sand is separated into zirconia and silica by using the Ar-$H_2$ arc plasma refining. And then silica is removed from it by the microwave leaching method to produce a high pure zirconia. Plasma melting consist of two sequential processes; reduction process with Ar gas only followed by refining process with Ar-$H_2$ gas. After cooling in chamber. The solid phase obtained at $240^{\circ}C$ were found to be composed of 20% sulfuric acid solution. The solution was used as a leaching solution with microwave irradiation to obtain a high purity zirconia.

• Membrane Journal
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• v.14 no.3
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• pp.201-206
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• 2004

The stability of the prepared silica membrane by chemical vapor deposition (CVD) method in the HI-$H_2O$ gaseous mixture was evaluated aiming at the application for hydrogen iodide decomposition in the thermochemical IS process. Porous $\alpha$-alumina having pore size of 100 nm was modified by the different CVD temperature using tetraethoxysilane as the Si source. The CVD temperature was $700^{\circ}C$, $650^{\circ}C$, and $600^{\circ}C$. The $H_2$/H$_2$ selectivities of the modified membranes which were measured by single-component permeation experiment showed 43.2, 12.6, and 8.7 at $600^{\circ}C$ for the M1 (CVD temperature was $700^{\circ}C$), M2 (CVD temperature was $650^{\circ}C$) and M3 membranes (CVD temperature was $600^{\circ}C$), respectively. Stability experiment in the HI-$H_2O$ gaseous mixture was carried out at $450^{\circ}C$. The prepared silica membrane at $600^{\circ}C$ of CVD temperature was more stable than that at the other CVD temperature.

• Journal of the Korean Society of Food Science and Nutrition
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• v.41 no.12
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• pp.1677-1685
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• 2012

The autolysate and hydrolysate of a common squid liver, Todarodes pacificus, were prepared. Autolysis (liver ratio, pH, temperature) and Protamex-treated hydrolysis (pH, temperature, ratio of protease to liver) conditions were optimized by response surface methodology using central composite design for under 1 hr of hydrolysis time. The desirability profile indicated that maximum DH could be achieved at a squid liver of 93.5%, pH 6.4, and $47^{\circ}C$ in autolysis, while that of Protamex-treated hydrolysis did at a Protamex-to-squid liver level of 0.33%, pH 6.0, and $55^{\circ}C$. Three amino acids, proline, cysteine, and methionine, were not detected in the total amino acid composition of the Protamex-treated hydrolysate, while they were detected in the free amino acid composition. Cadmium was $8.32{\pm}0.03$ mg/100 g-powder for raw, $3.56{\pm}0.02$ mg/100 g-powder for the autolysate, and $13.26{\pm}0.04$ mg/100 g powder for the Protamex-treated hydrolysate. The major molecular weight ranged from 1.0 to 1.5 kDa for the autolysate and from 210 to 470 Da for the Protamex-treated hydrolysate. Food functionalities of the autolysate, such as surface hydrolphobicity, emulsion activity index, emulsion stability, water, and fat adsorption, were similar to the Protamex-treated hydrolysate. Both the autolysate and Protamex-hydrolysate showed high inhibitory activities on the angiotensin-I converting enzyme. Cell toxicity against the HepG2 cell line was not detected in the autolysate or the Protamex-treated hydrolysate by 200 ${\mu}g/mL$.

• Journal of the Korean Vacuum Society
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• v.15 no.1
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• pp.97-102
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• 2006

Anodic alumina with self-organized and ordered nano hole arrays can be a good candidate of an irradiation mask to modify the properties of nano-scale region. In order to try using porous anodic alumina as a mask for ion-beam patterning, ion beam transmittance of anodic alumina was tested. 4 Um thick self-standing AAO templates anodized from Al bulk foil with two different aspect ratio, 200:1 and 100:1, were aligned about incident ion beam with finely controllable goniometer. At the best alignment, the transmittance of the AAO with aspect ratio of 200:1 and 100:1 were $10^{-8}\;and\;10^{-4}$, respectively. However transmittance of the thin film AAO with low aspect ratio, 5:1, were remarkably improved to 0.67. The ion beam transmittance of self-standing porous alumina with a thickness larger than $4{\mu}m$ is extremely low owing to high aspect ratio of nano hole and charging effect, even at a precise beam alignment to the direction of nano hole. $SiO_2$ nano dot array was formed by ion irradiation into thin film AAO on $SiO_2$ film. This was confirmed by scanning electron microscopy that the $SiO_2$ nano dot array is similar to AAO hole array.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.11a
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• pp.123-127
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• 1992

When MOS devices is exposed to radiation, radiation effects of P-type MOS capacitor can cause modulation and/or degradation in devices characteristics and its operating life. The oxide layer is grown in $O_2$+T.C.E. and its thickness ranges from 40 to 80 nm. Irradiations on MOS capacitor were performed by Cobalt-60 gamma ray source and total dose ranges from $10^4$ to $10^8$ rads. The radiation effect on electrical conduction characteristics(I-V) in MOS capacitor was measured as a function of gate oxide thickness and total dose. From the experimental result, I-V characteristics is found to be influenced strongly by total dose in irradiated p-type MOS capacitors. The ohmic current is dependant on of total dose in irradiated P-type MOS capacitors. This results are explained using surface states at interface radiation-induced traps.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2009.10a
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• pp.910-912
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• 2009

투명전극은 비저항이 $1{\times}10^{-3}{\Omega}/cm$이하, 면저항이 $10^3{\Omega}/sq$이하로 전기전도성이 우수하고 380에서 780nm의 가시광선 영역에서의 투과율이 80%이상이라는 두 가지 성질을 만족시키는 박막이다. 기존의 평판디스플레이의 경우, 금속 산화물 투명전극이 진공 증착 공정을 통해 도포된 유리기판상의 각 화소를 포토리소그래피 공정으로 제조된 박막트랜지스터(TFT : Thin Film Transistor)로 제어함으로써 화상을 구현한다. 본 연구에서는 스퍼터링 진공 증착 장치를 이용하여 투명 도전막(ITO: Indium Tin Oxide)을 제작하고 제작된 ITO 박막의 광 및 전기 그리고 물성적 특성을 조사하여 최상의 공정 조건을 확립하였다. a-Si:H 박막위에 형성되는 ITo 박막은 a-Si:H 박막의 특성상 온도 및 스퍼터링 전력에 대한 연구가 주요 문제이다. 본 실험에서는 $In_2O_3:SnO_2$의 조성비는 90:10 wt% 인 타겟의 특성이 우수하였고, $Ar:O_2$의 분압비는 100:1 및 42:8 의 조건이 적당하였으며, 온도는 $200^{\circ}C$ 가장 우수한 특성을 얻을 수 있었다. $200^{\circ}C$ 는 비정질 실리콘의 성능에 좋은 영향을 미치는 온도이며, 알려진 것과 같이 $23^{\circ}C$ 즉 실온의 경우에 비해 막의 균질성 및 특성이 우수 한 것을 알 수 있었다. 본 연구에서 제작한 박막은 광 투과도가 90% 이상, 비저항이 $300{\mu}{\Omega}cm$ 이하의 특성을 갖게되어 이미지센서, 태양전지, 액정 텔레비젼등 빛의 통과와 전도성등 두가지 특성에 동시에 만족 될만한 성능을 가질 수 있음을 확인하였다.

• Journal of Magnetics
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• v.3 no.2
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• pp.44-48
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• 1998

Scanning Electron Microscopy with Polarization Analysis (SEMPA) was used to image the surface magnetic domain structure of the 100 ${\mu}{\textrm}{m}$ thick 3% Si-Fe sheet. The thin-gauged 3% Si-Fe strips with magnetic induction ($B_{10}$) from 1.98 to 1.57 Tesla were prepared via conventional metallurgical processes including melting, hot-and cold-rolling, intermediate annealing and final annealing. Using SEMPA, it was observed that the $B_{10}$ (1.98 T) Tesla sample was almost composed of 180$^{\circ}$ stripe domains which are parallel to rolling direction. On the other hand the 3% Si-Fe sheet with $B_{10}$ (1.57 T) Tesla was composed of large 180$^{\circ}$stripe domains that are slanted about 30$^{\circ}$to the rolling direction and complex magnetic domain structures like tree and zigzag pattern. The 180$^{\circ}$stripe domains, which covered a major part of the sample, had (110)<001> Goss texture parallel to the rolling direction. The domain walls between 180$^{\circ}$stripe domains were the conventional Bloch type walls. On the other hand, the 90$^{\circ}$domains, which covered minor part on edge of the sample, were observed in (200) grains. The domain walls between 90$^{\circ}$domains were the Neel type walls. In high magnification, the elliptical singularity at the Neel walls was clearly observed.