• Economic and Environmental Geology
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• v.53 no.1
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• pp.1-9
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• 2020

Magnesium silicate minerals such as serpentine [Mg₃Si₂O₅(OH)₄] have a high potential for the sequestration of CO₂; thus, their reactivity toward dissolution under CO₂-free and CO₂-containing conditions in acidic solvents is a critical process with respect to their carbonation reactions. To examine the carbonation efficiency and dissolution mechanism of serpentine, hydrothermal treatment was performed to the starting material via a modified direct aqueous carbonation process at 100 and 150℃. The serpentine dissolution experiments were conducted in H₂SO₄ solution with concentration range of 0.3-1 M and at a CO₂ partial pressure of 3 MPa. The initial pH of the solution was adjusted to 13 for the carbonation process. Under CO₂-free and CO₂-containing conditions, the carbonation efficiency increased in proportion to the concentration of H₂SO₄ and the reaction temperature. The leaching rate under CO₂-containing conditions was higher than that under CO₂-free conditions. This suggests that shows the presence of CO₂ affects the carbonation reaction. The leaching and carbonation efficiencies at 150℃ in 1 M H₂SO₄ solution under CO₂-containing conditions were 85 and 84%, respectively. The dissolution rate of Mg was higher than that of Si, such that the Mg : Si ratio of the reacted serpentine decreased from the inner part (approximately 1.5) to the outer part (less than 0.1). The resultant silica-rich layer of the reaction product ultimately changed through the Mg-depleted skeletal phase and the pseudo-serpentine phase to the amorphous silica phase. A passivating silica layer was not observed on the outer surface of the reacted serpentine.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1514-1515
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• 1998

Diamond thin films were deposited on n-type (100) Si wafers from $H_2-CH_4$ gas mixture by rf PACVD. Prior to deposition, mechanical scratching was done to improve density of nucleation sites with diamond paste of 3${\mu}m$. The microstructure of deposited diamond thin films was studied by using the following conditions : discharge power of 500W, $H_2$ flow rate of 50sccm, reaction pressure of 20torr, and $CH_4/H_2$ ratio of 0.3$\sim$1%. The deposited diamond thin films showed that the crystallite was increased at the lower methane concentration. The deposited thin films were characterized by Scanning Electron Microscopy. Raman Spectroscopy and Fourier-Transform Infrared Spectroscopy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.09a
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• pp.9-12
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• 2001

The $Sr_{0.8}Bi_{2.4}Ta_2O_9(SBT)$ thin films are deposited on Pt-coated electrode($Pt/TiO_2/SiO_2/Si$) using RF magnetron sputtering method. With increasing post-annealing temperature from $600[^{\circ}C]$ to $850[^{\circ}C]$, Bi-layered perovskite phase was crystallized above $650[^{\circ}C]$. The maximum remanent polarization and the coercive electric field is 11.60[${\mu}C/cm^{2}$] 48[kV/cm] respectively. The leakage current density of SBT capacitor at post-annealing temperature of $750[^{\circ}C]$ is $1.01{\times}10^{-8}A/cm^2$ at 100[kV/cm]

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2001.06a
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• pp.54-54
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• 2001

End hall type 이온건을 이용하여 다층 다이아몬드상 차본(DLC) 필름을 M2 steel 기판 위에 합성하였다. 다충 다이아몬드상 카본 필름은 순수 DLC 필름과 실라콘 함유 D DLC 필름의 조합으로 구성되어 있으며, $C_6H_6$ 및 수소 희석된 30% 를 사용하여 증착 하였다. 생성된 DLC 박막의 조성은 $C_6H_6$과 $SiH_4$ 가스의 비를 조절함으로써 변화시켰으며, 250 kHz의 고주파 전원을 바이어스 전원으로 사용하여 박막의 물성을 변화시켰다. DLC 박막의 두께와 다층의 구조 및 종류(2충, 4충)는 코팅 공정의 실험 변수로서 변화시켰다. 직경 3 mm의 루비볼을 사용하여 ball-on-disk 방식으로 마모 시험을 행하였으며, 하중은 490 g, 500 rpm에서 상대습도를 5 % 이하와 80 % 이상으로 변화시켜가며 시행하였다. 100,000 cycle 회전 후 측정된 시편의 마모상태는 5 % 이하의 습 도에서 4층 구조의 박막이 2충 구조의 박막보다 2배 이상 낮은 마모률을 보였으며 그 값은 각각 $2~3{\times}\;10^{-8}\;\textrm{mm}^3/rev$와 $1~2{\times}\;10^{-7}\;\textrm{mm}^3/rev$로 나타내었다. 80% 이상의 습도에서도 마모률의 변화는 저습에서의 경우와 유사하였다. 또한 Si함유 DLC 다층 박막이 저습 및 고습에서 더욱 안정한 마찰 마모 거동을 보였다.

• Transactions on Electrical and Electronic Materials
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• v.10 no.2
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• pp.58-61
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• 2009

The electrical stability of ZnO: Al thin films deposited on glass substrate by the RF magnetron sputtering method have been modified by a hydrogen annealing treatment and $SiO_2$ protection layer. AZO thin films were deposited at room temperature and different RF powers of 50, 100, 150, and 200 W to optimize the AZO film growth condition. The lowest value of resistivity of $9.44{\times}10^{-4}{\Omega}cm$ was obtained at 2 mtorr, room temperature, and a power level of 150 W. Then, the AZO thin films were annealed at $250-400^{\circ}C$ for 1 h in hydrogen ambient. The minimum resistivity obtained was $8.32{\times}10^{-4}{\Omega}cm$ as-annealed at $300^{\circ}C$. The electrical properties were enhanced by the hydrogen annealing treatment. After a 72 h damp-heat treatment in harsh conditions of a water steam at $110^{\circ}C$ for four representative samples, a degradation of electrical properties was observed. The sample of hydrogen-annealed AZO thin films with $SiO_2$ protection layer showed a slight degradation ratio(17%) of electrical properties and a preferable transmittance of 90%. The electrical stability of AZO thin films had been modified by hydrogen annealing treatment and $SiO_2$ protection layer.

• Tribology and Lubricants
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• v.13 no.1
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• pp.34-41
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• 1997

Frictional behavior of three automotive friction materials (brake pads) containing different amounts of antimony trisulfide ($Sb_2S_3$) and zirconium silicate ($ZRSiO_4$) were investigated using a front brake system. The friction materials were tested on a brake dynamometer (dyno) with gray cast iron rotors. The dynamometer(dyno) test simulated the dragging of a ehicle maintaining 70 km/h and vehicle stops from 100 km/h using 20 different combinations of initial brake temperature (IBT) and input pressure (IP). The results showed a strong influence of the relative amount of $Sb_2S_3$ and $ZrSiO_4$ in friction materials on friction characteristics. Friction stability was improved with the higher concentration of $Sb_2S_3$ in the friction material. Torque variation during drag cycle was increased with an increase of the $ZrSiO_4$ concentration in the friction material. Average friction coefficient and the wear rate of the friction material increased by using more aggressive friction materials containing more $ZrSiO_4$ and less $Sb_2S_3$. Generation of the disk thickness variation (DTV) increased when friction materials with higher concentration of $ZrSiO_4$ were used Careful examination of DTV change showed that aggressiveness of the friction material played an important role in determining torque variation.

• Journal of the Korean Ceramic Society
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• v.42 no.8 s.279
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• pp.567-574
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• 2005

Densification of SiC powder with additives of total amount of2, 4, 8 $wt\%$ Al-B-C was carried out by Spark Plasma Sintering (SPS). The unique features of the process are the possibilities of a very fast heating rate and a short holding time to obtain fully dense materials. The heating rate and applied pressure were kept at $100^{\circ}C/min$ and 40 MPa, while the sintering temperature and holding time varied from 1700 - $1800^{\circ}C$ for 10 - 40 min, respectively. The SPS-sintered specimens with different amount of Al-B-C at $1800^{\circ}C$ reached near-theoretical density. The $3C{\rightarrow}6H,\;15R{\rightarrow}4H$ phase transformation of SiC was enhanced by increasing the additive amount. The microstructure of SiC sintered up to $1750^{\circ}C$ consisted of fine equiaxed grains. In contrast, the growth of large elongated grains in small matrix grains was shown in sintered bodies at $1800^{\circ}C$, and the plate-like grains interlocking microstructure had been developed by increasing the holding time at $1800^{\circ}C$. The grain growth rate decreases with increasing amount of Al-B-C in SiC starting powder, however, the both of volume fraction and aspect ratio of large grains in sintered body increased.

• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.381-381
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• 2009

염료감응형 태양전지의 효율 향상을 위한 다양한 방법들 중 $TiO_2$ 나노 파우더의 표면 개질 및 페이스트의 분산성 향상을 위한 연구가 활발하게 진행되고 있다. 기존 나노 파우더의 표면 개질법으로는 액상 공정인 졸겔법이 있으나 표면 처리 공정에서의 응집현상은 아직 해결해야 할 과제 중 하나이다. 이에 본 연구에서는 진공증착방법인 ALD법을 이용하여 염료감응형 태양전지용 $TiO_2$ 나노 파우더의 $SiO_2$ 산화물 표면처리를 통한 분산특성을 파악하였다. 기존 ALD법의 경우 reactor의 온도가 $300{\sim}500^{\circ}C$ 정도의 고온에서 공정이 이루어졌지만 본 실험에서는 2차 아민계촉매(pyridine)을 사용하여 reactor의 온도를 $30^{\circ}C$정도의 저온공정에서 $SiO_2$ 산화물을 코팅을 하였다. MO source로는 액체상태의 TEOS$(Si(OC_2H_5)_4)$를, 반응가스로는 $H_2O$를 사용하였고, 불활성 기체인 Ar 가스는 purge 가스로 각각 사용 하였다. ALD 공정에 의해 표면처리 된 $TiO_2$ 나노 파우더의 분산특성은 각 공정 cycle에 따라 FESEM을 통하여 입자의 형상 및 분산성을 확인하였으며 입도 분석기를 통하여 부피의 변화 및 분산 특성을 확인하였다. 공정 cycle 이 증가함에 따라 입자간의 응집현상이 개선되는 것을 확인 할 수 있었으며, 100cycles에서 응집현상이 가장 많이 감소하는 것을 확인할 수 있었다. 또한 표면 처리된 $SiO_2$ 산화막은 XRD를 통한 결정 분석 및 EDX를 통한 정성 분석을 통하여 확인하였다.

• Korean Journal of Materials Research
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• v.31 no.6
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• pp.313-319
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• 2021

Understanding of effects of changes in the particle size of the matrix material on the mullite whisker growth during the production of porous mullite is crucial for better design of new porous ceramics materials in different applications. Commercially, raw materials such as Al₂O₃/SiO₂ and Al(OH)₃/SiO₂ are used as starting materials, while AlF₃ is added to fabricate porous mullite through reaction sintering process. When Al₂O₃ is used as a starting material, a porous microstructure can be identified, but a more developed needle shaped microstructure is identified in the specimen using Al(OH)₃, which has excellent reactivity. The specimen using Al₂O₃/SiO₂ composite powder does not undergo mulliteization even at 1,400 ℃, but the specimen using the Al(OH)₃/SiO₂ composite powder had already formed complete mullite whiskers from the particle size specimen milled for 3 h at 1,100 ℃. As a result, the change in sintering temperature does not significantly affect formation of microstructures. As the particle size of the matrix materials, Al₂O₃ and Al(OH)₃, decreases, the porosity tends to decrease. In the case of the Al(OH)₃/SiO₂ composite powder, the highest porosity obtained is 75 % when the particle size passes through a milling time of 3 h. The smaller the particle size of Al(OH)₃ is and the more the long/short ratio of the mullite whisker phase decreases, the higher the density becomes.

• Journal of the Korean Magnetics Society
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• v.12 no.2
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• pp.64-67
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• 2002

IrMn pinned spin valve (SV) films with stacks of Ta/NiFe/IrMn/CoFe/Cu/CoFe/NiFe/Ta were prepared by dc sputtering onto thermally oxidized Si (111) substrates at room temperature under a magnetic field of about 100 Oe. The annealing cycle number and temperature dependence of exchange coupling field (H$_{ex}$), magnetoresistance (MR) ratio, and coercivity (H$_{c}$) were investigated. By optimizing the process of deposition and post thermal annealing condition, we obtained the IrMn based SV films with MR ratio of 3.6%, H$_{ex}$ of 1180 Oe for the pinned layer. The H$_{ex}$ is stabilized after the second annealing cycle and it is thought that this SV reveals high thermal stability. The H$_{ex}$ maintained its strength of 600 Oe in operation up to 24$0^{\circ}C$ and decreased monotonically to zero at 27$0^{\circ}C$.