• Korean Chemical Engineering Research
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• v.55 no.3
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• pp.436-442
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• 2017

Fischer-Tropsch synthesis is the technology of converting a syngas (CO+$H_2$) derived from such as coal, natural gas and biomass into a hydrocarbon using a catalyst. The catalyst used in the Fischer-Tropsch synthesis consists of active metal, promoter and support. The types of these components and composition affect the reaction activity and product selectivity. In this study, we manufactured an iron catalyst using ${\gamma}-Al_2O_3/SiO_2$ mixed support (100/0 wt%, 75/25 wt%, 50/50 wt%, 25/75 wt%, 0/100 wt%) by an impregnation method to investigate how the composition of ${\gamma}-Al_2O_3/SiO_2$ mixed support effects on the reaction activity and product selectivity. The physical properties of catalyst were analyzed by $N_2$ physical adsorption and X-Ray diffraction method. The Fischer-Tropsch synthesis was conducted at $300^{\circ}C$, 20bar in a fixed bed reactor for 60h. According to the results of the $N_2$ physical adsorption analysis, the BET surface area decreases as the composition of ${\gamma}-Al_2O_3$ decreases, and the pore volume and pore average diameter increase as the composition of ${\gamma}-Al_2O_3$ decreases except for the composition of ${\gamma}-Al_2O_3/SiO_2$ of 50/50 wt%. By the results of the X-Ray diffraction analysis, the particle size of ${\alpha}-Fe_2O_3$ decreases as the composition of ${\gamma}-Al_2O_3$ decreases. As a result of the Fischer-Tropsch synthesis, the CO conversion decreases as the composition of ${\gamma}-Al_2O_3$ decreases, and the selectivity of C1-C4 decreases until the composition of ${\gamma}-Al_2O_3$ was 25 wt%. In contrast, the selectivity of C5+ increases until the composition of ${\gamma}-Al_2O_3$ is 25 wt%.

• Proceedings of the Optical Society of Korea Conference
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• 2009.02a
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• pp.491-492
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• 2009

We have fabricated a microlens integrated silicon (Si) structure for optical interconnects. To form microlenses, the Si wafer was wet-etched with $SiN_x$ mask in a HF:$HNO_3:C_2H_4O_2$ solution and then the holes were filled with a AZ9260 photoresist. The focal length of microlens increased in proportional to its radius of curvature (ROC). For the ROC of $100-161{\mu}m$, the focal lengths were obtained approximately between $160{\mu}m$ and $310{\mu}m$, in an agreement with the simulated values using a ray tracing method.

• Journal of the Korean Ceramic Society
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• v.29 no.6
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• pp.451-458
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• 1992

Dense glass-ceramics for low firing temperature substrate were prepared by addition of CeO2 flux to the glass of MgO-Al2O3-SiO2 system. Glass powders were fabricated by melting at 150$0^{\circ}C$ and ball milling. Glass powder compacts were sintered at 800~100$0^{\circ}C$ for 3h. The crystallization and the shrinkage behaviors of glass powder compacts were analyzed by XRD, DTA and TMA. The shrinkage of glass powder compact increased with increasing the amount of CeO2. Because the softening temperature decreased and the crystallization temperature increased with increasing the amount of CeO2. Apparently, addition of CeO2 prevented formation of $\mu$-cordierite phase from the glass-ceramics and improved formation of $\alpha$-cordierite phase. Therefore crystallization properties were enhanced.

• Bulletin of the Korean Chemical Society
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• v.32 no.12
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• pp.4382-4386
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• 2011

$TiO_2$ hollow spheres were fabricated by using $SiO_2$ as an inorganic template. Spherical $SiO_2$ particles were coated by $TiO_2$ through the nucleation process, and then the core $SiO_2$ part was eliminated by using HF solution. Finally, $TiO_2$ hollow spheres were obtained. The size of the $TiO_2$ hollow spheres was about 300-400 nm and the thickness of the hollow wall was about 20-30 nm. The hollow has several holes whose diameters were within 100-200 nm. Dye-sensitized solar cells fabricated by using the $TiO_2$ hollow spheres were characterized. The solar conversion efficiency of the cell was 8.45% when $TiO_2$ hollow spheres were used as a scattering material, while it was 4.59% when $TiO_2$ hollow spheres were used as a normal electrode material.

• Journal of the Korean Ceramic Society
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• v.32 no.8
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• pp.893-900
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• 1995

The porous wollastonite ceramics were fabricated after firing calcium silicates, obtained using natural resources and by-products of power plants by hydrothermal synthesis, without organic fibers or asbestos for reinforcement agent. A specimen from diatomite as a SiO2 staring raw material had the highest strength owing to normal grain growth and good densification from homogeneous sperhcial C-S-H hydrates. A specimen from SiO2 sol as a SiO2 starting raw material showed tobermolite, but fly ash and mixed system did xonotlite after hydrothermal synthesis. The specimen from fly ash showed the lowest firing shirikage and strength changes in the firing range from 50$0^{\circ}C$ to 120$0^{\circ}C$. The other phases in all specimens changed to wollastonite phase after firing at 100$0^{\circ}C$. Also the average pore size was distributed from 0.2${\mu}{\textrm}{m}$ to 2${\mu}{\textrm}{m}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.04b
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• pp.99-100
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• 2009

탄화규소를 이용한 1200V급 MOSFET 소자 제작을 위하여 특성 simulation을 수행하였다. 1200V 내압을 얻기 위해서 불순물 농도가 5E15/cm3이고 에피층의 두께가 12um인 상용 탄화규소 웨이퍼를 기준으로 하였으며 채널 저항을 줄이기 위해 채널길이를 $0.5{\mu}m$로 하였다. 게이트전압이 13V, 드레인 전압이 4V에서 specific on-resistance 값은 $12m\;{\Omega}cm^2$로 매우 우수한 특성을 보이고 있다. P-body의 표면 농도를 5E16/cm3 에서 1E18/cm3으로 변화시키면서 소자의 전기적 특성을 예측하였으며 실험 결과와 비교하여 특성 변수를 추출하였다.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.4
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• pp.91-96
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• 2014

Through silicon via (TSV) technology is to form a via hole in a silicon chip, and to stack the chips vertically for three-dimensional (3D) electronics packaging technology. This can reduce current path, power consumption and response time. In this study, Cu-filling substrate size was changed from Si-chip to a 4" wafer to investigate the behavior of Cu filling in wafer level. The electrolyte for Cu filling consisted of $CuSO_4$ $5H_2O$, $H_2SO_4$ and small amount of additives. The anode was Pt, and cathode was changed from $0.5{\times}0.5cm^2$ to 4" wafer. As experimental results, in the case of $5{\times}5cm^2$ Si chip, suitable distance of electrodes was 4cm having 100% filling ratio. The distance of 0~0.5 cm from current supplying location showed 100% filling ratio, and distance of 4.5~5 cm showed 95%. It was confirmed good TSV filling was achieved by plating for 2.5 hrs.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.211-211
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• 1999

Titanium nitride (TiN) thin films have useful properties including high hardness, good electrical conductivity, high melting point, and chemical inertness. The applications have included wear-resistant hard coatings on machine tools and bearings, decorative coating making use of the golden color, thermal control coatings for widows, and erosion resistant coatings for spacecraft plasma probes. For all these applications as feature sizes shrink and aspect ratios grow, the issue of good step coverage becomes increasingly important. It is therefore essential to manufacture conformal coatings of TiN. The growth of TiN thin films by chemical vapor deposition (CVD) is of great interest for achieving conformal deposition. The most widely used precursor for TiN is TiCl4 and NH3. However, chlorine impurity in the as-grown films and relatively high deposition temperature (>$600^{\circ}C$) are considered major drawbacks from actual device fabrication. To overcome these problems, recently, MOCVD processes including plasma assisted have been suggested. In this study, therefore, we have doposited Ti(C, N) thin films on Si(100) and D2 steel substrates in the temperature range of 150-30$0^{\circ}C$ using tetrakis diethylamido titanium (TDEAT) and titanium isopropoxide (TIP) by pulsed DC plamsa enhanced metal-organic chemical vapor deposition (PEMOCVD) method. Polycrystalline Ti(C, N) thin films were successfully grown on either D2 steel or Si(100) surfaces at temperature as low as 15$0^{\circ}C$. Compositions of the as-grown films were determined with XPS and RBS. From XPS analysis, thin films of Ti(C, N) with low oxygen concentration were obtained. RBS data were also confirmed the changes of stoichiometry and microhardness of our films. Radical formation and ionization behaviors in plasma are analyzed by optical emission spectroscopy (OES) at various pulsed bias and gases conditions. H2 and He+H2 gases are used as carrier gases to compare plasma parameter and the effect of N2 and NH3 gases as reactive gas is also evaluated in reduction of C content of the films. In this study, we fond that He and H2 mixture gas is very effective in enhancing ionization of radicals, especially N resulting is high hardness. The higher hardness of film is obtained to be ca. 1700 HK 0.01 but it depends on gas species and bias voltage. The proper process is evident for H and N2 gas atmosphere and bias voltage of 600V. However, NH3 gas highly reduces formation of CN radical, thereby decreasing C content of Ti(C, N) thin films in a great deal. Compared to PVD TiN films, the Ti(C, N) film grown by PEMOCVD has very good conformability; the step coverage exceeds 85% with an aspect ratio of more than 3.

• Proceedings of the Korean Magnestics Society Conference
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• 2003.06a
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• pp.24-24
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• 2003

Metallic magnetoelectronic devices have studied intensively and extensively for last decade because of the scientific interest as well as great technological importance. Recently, the scientific activity in spintronics field is extending to the hybrid devices using ferromagnetic/semiconductor heterostructures and to new ferromagnetic semiconductor materials for future devices. In case of the hybrid device, conductivity mismatch problem for metal/semiconductor interface will be able to circumvent when the device operates in ballistic regime. In this respect, spin-valve transistor, first reported by Monsma, is based on spin dependent transport of hot electrons rather than electron near the Fermi energy. Although the spin-valve transistor showed large magnetocurrent ratio more than 300%, but low transfer ratio of the order of 10$\^$-5/ prevents the potential applications. In order to enhance the collector current, we have prepared magnetic tunneling transistor (MTT) with single ferromagnetic base on Si(100) collector by magnetron sputtering process. We have changed the resistance of tunneling emitter and the thickness of baser layer in the MTT structure to increase collector current. The high transfer ratio of 10$\^$-4/ range at bias voltage of more than 1.8 V, collector current of near l ${\mu}$A, and magnetocurrent ratio or 55% in Si-based MTT are obtained at 77K. These results suggest a promising candidate for future spintronic applications.

• Korean Journal of Materials Research
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• v.9 no.11
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• pp.1129-1136
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• 1999

TIN films were prepared on Si(100) substrate by ICP-CVD(inductive1y coupled plasma enhanced chemical vapor deposition) using TEMAT(tetrakis ethylmethamido titanium : Ti$[\textrm{N}\textrm{(CH)}_{3}\textrm{C}_{2}\textrm{H}_{5}]_{4}$) precursor at various deposition conditions. Phase, microstructure, and the electrical properties of TIN films were characterized by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), high resolution transmission electron microscopy (HRTEM) and electrical measurements. Polycrystalline TiN films with B1 structure were grown at temperatures over $200^{\circ}C$. Preferentially oriented along TiN(111) films were obtained at temperatures over $300^{\circ}C$ with the flow rates of 10, 5, and 5 sccm for TEMAT, $\textrm{N}_{2}$ and Ar gas. The TiN/Si(100) interface was flat and no chemical reaction between TIN and $\textrm{SiO}_2$ was found. The resistivity, carrier concentration and the carrier mobility for the TiN sample prepared at $500^{\circ}C$ are 21 $\mu\Omega$cm, 9.5$\times\textrm{10}^{18}\textrm{cm}^{-3}$ and $462.6\textrm{cm}^{2}$/Vs, respectively.