• Resources Recycling
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• v.18 no.6
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• pp.38-45
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• 2009

Dissolution characteristics of magnesite ore in hydrochloric acid solution and removal of impurity were investigated. The dissolution yield increased with increasing temperature and with decreasing particle size. The optimum conditions for dissolution were found to be reaction period of 120 min, reaction temperature of $80^{\circ}C$ and mean particle size of 100. Under optimal dissolution condition the extraction of Mg was 98%. It was found that most of Si and Al exist in the residue, and they can be removed by filtering. Dissolved impurity ions were precipitated as metal hydroxides by pH adjustment. Polymers were used as coagulants for metal hydroxides and the suitable coagulant dosage was 1mg/100ml of non-ionic polymer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.141-141
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• 2009

Blue light-emitting diodes (LEDs), violet laser diodes 같은 광전소자들은 질화물 c-plane 기판위에 소자로 응용되어 이미 상품화 되어 왔다. 그러나 2족-질화물 재료들은 wurtzite 구조를 가지므로 c-plane에 평행한 자연적인 극성을 띌 뿐만 아니라 결정 내부 stress로 인한 압전현상 또한 나타나 큰 내부 전기장을 형성하게 된다. 이렇게 생성된 내부 전기장은 전자와 홀의 재결합 효율을 감소시키고 소자 응용 시 red-shift의 원인이 되곤 한다. 따라서 최근 들어 m-plane(1-100), a-plane (11-20)같은 무극성을 뛰는 기판 위에 소자를 만드는 방법이 각광을 받고 있는 추세다. 그러나 무극성 기판을 소자에 응용 시 Chemical Mechanical Planarization (CMP)에 의한 가공은 반도체 기판으로써 이용하기 위한 필수 불가결의 공정이다. c면(0001) SiC wafer에 대한 연구는 현재 많이 발표가 되어 있으나 무극성면 SiC wafer에 대한 CMP 공정에 대한 연구사례는 없는 실정이다. 본 연구에서는 C면 (0001)으로 성장된 잉곳을 a면(11-20)과 m(1-100)면으로 절단 후, slurry type (KOH-based colloidal silica slurry, NaOCl), 산화제, 연마제등을 변화하여 CMP 공정을 거침으로서 일어나는 기계 화학적 가공 양상에 대하여 알아보았다. 그 후 표면 형상 분석 하기위해 Atomic Force Microscope(AFM)을 사용하였고, 표면 스크레치를 SEM을 이용해서 알아보았다.

• Proceedings of the Korean Vacuum Society Conference
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• 2001.07a
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• pp.54-54
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• 2001

• Development and Reproduction
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• v.12 no.2
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• pp.159-168
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• 2008

Nanog is a newly identified member of the homeobox family of DNA binding transcription factors that functions to maintain the undifferentiated state of stem cells. However, molecular mechanisms underlying the function of Nanog remain largely unknown. To elucidate the regulatory roles of Nanog involved in maintenance of P19 embryonal carcinoma (EC) stem cells, we transfected three small interfering RNA (siRNA) duplexes targeted against different regions of the Nanog gene into P19 cells. The Nanog siRNA-100 duplexes effectively decreased the expression of Nanog up to 30.7% compared to other two Nanog siRNAs, the Nanog siRNA-400 (67.9 %) and -793 (53.0%). When examined by RT-PCR and real-time PCR, the expression of markers for pluripotency such as Fgf4, Oct3/4, Rex1, Sox1 and Yes was downregulated at 48 h after transfection with Nanog siRNA-100. Furthermore, expression of the ectodermal markers, Fgf5 and Isl1 was reduced by Nanog knockdown. By contrast, the expression of other markers for pluripotency such as Cripto, Sox2 and Zfp57 was not affected by Nanog knockdown at this time. On the other hand, the expression of Lif/Stat3 pathway molecules and of the endoderm markers including Dab2, Gata4, Gata6 and the germ cell nuclear factor was not changed by Nanog knockdown. The results of this study demonstrated that the knockdown of Nanog expression by RNA interference in P19 cells was sufficient to modulate the expression of pluripotent markers involved in the self-renewal of EC stem cells. These results provide the valuable information on potential downstream targets of Nanog and add to our understanding of the function of Nanog in P19 EC stem cells.

• Korean Journal of Metals and Materials
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• v.49 no.4
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• pp.313-320
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• 2011

100 nm-thick hydrogenated amorphous silicon $({\alpha}-Si:H)$ films were deposited on a glass and glass/30 nm Ni substrates by inductively-coupled plasma chemical vapor deposition (ICP-CVD) at temperatures ranging from 100 to $550^{\circ}C$. The sheet resistance, microstructure, phase transformation and surface roughness of the films were characterized using a four-point probe, AFM (atomic force microscope), TEM (transmission electron microscope), AES (Auger electron spectroscopy), HR-XRD(high resolution X-ray diffraction), and micro-Raman spectroscopy. A nano-thick NiSi phase was formed at substrate temperatures >$400^{\circ}C$. AFM confirmed that the surface roughness did not change as the substrate temperature increased, but it increased abruptly to 6.6 nm above $400^{\circ}C$ on the glass/30 nm Ni substrates. HR-XRD and micro-Raman spectroscopy showed that all the Si samples were amorphous on the glass substrates, whereas crystalline silicon appeared at $550^{\circ}C$ on the glass/30 nm Ni substrates. These results show that crystalline NiSi and Si can be prepared simultaneously on Ni-inserted substrates.

• Korean Journal of Materials Research
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• v.23 no.4
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• pp.246-249
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• 2013

Nano-sized ${\beta}$-SiC nanoparticles were synthesized combined with a sol-gel process and a carbothermal process. TEOS and carbon black were used as starting materials for the silicon source and carbon source, respectively. $SiO_2$ nanoparticles were synthesized using a sol-gel technique (Stober process) combined with hydrolysis and condensation. The size of the particles could be controlled by manipulating the relative rates of the hydrolysis and condensation reactions of tetraethyl orthosilicate (TEOS) within the micro-emulsion. The average particle size and morphology of synthesized silicon dioxide was about 100nm and spherical, respectively. The average particles size and morphology of the used carbon black powders was about 20nm and spherical, respectively. The molar ratio of silicon dioxide and carbon black was fixed to 1:3 in the preparation of each combination. $SiO_2$ and carbon black powders were mixed in ethanol and ball-milled for 12 h. After mixing, the slurries were dried at $80^{\circ}C$ in an oven. The dried powder mixtures were placed in alumina crucibles and synthesized in a tube furnace at $1400{\sim}1500^{\circ}C$ for 4 h with a heating rate of $10^{\circ}C$/min under flowing Ar gas (160 cc/min) and furnace cooling down to room temperature. SiC nanoparticles were characterized by XRD, TEM, and SAED. The XRD results showed that high purity beta silicon carbide with excellent crystallinity was synthesized. TEM revealed that the powders are spherical shape nanoparticles with diameters ranging from 15 to 30 nm with a narrow distribution.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.327-327
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• 2011

DLC 필름은 바이오 적합성, 특히 생체 적합성이 뛰어나기 때문에 바이오 코팅분야에서 널리 이용된다. 많은 연구 결과에 의하면 세포와 장기 등이 바이오 재료 표면에 적절히 접합할 수 있도록, 재료 표면을 산소나 질소를 이용하여 플라즈마 처리로 초친수성 표면으로 개질하고 있다. 하지만, 시간이 지남에 따라서 친수성 표면은 점차 재료의 표면 처리 전의 성질인 소수성을 회복하게 된다. D실제 생체에 적용하기 위해서 이러한 시효 효과에 대한 정확한 평가가 이루어져야 한다. 따라서 산소와 질소 플라즈마 처리 후의 친수성 성질이 소수성 성질로 변해가는 거동을 조사하는게 중요하다. 13.56 MHz의 plasma assisted chemical vapor deposition (PACVD) 법을 이용하여 DLC와 Si-DLC를 500 ${\mu}m$ 두께의 P-type 실리콘(100) 기판에 증착하였다. 박막 증착 과정에 사용한 기체는 벤젠과 희석된 silane이 사용되었다(SiH4/H2=10:90). 박막 증착은 -400 V의 바이어스 전압을 인가하였으며, 이때 증착 압력은 1.33Pa으로 일정하게 유지하여, 두께 $0.55{\pm}0.01{\mu}m$로 증착하였다. X-ray Photoelectron Spectroscopy (XPS) 법을 이용하여 실리콘 함량을 측정하였으며, 증착 된 Si-DLC의 실리콘 함량은 0~4.88 at. %였다. 이후에 질소와 산소 플라즈마를 이용하여 챔버 압력을 1.33 Pa로 유지하여, -400 V의 바이어스 전압을 인가하여 10분간 표면 처리를 하였다. 표면 처리된 DLC와 Si-DLC 표면 위에서의 물방울(water droplet)의 젖음각을 20일간 측정하였다. 플라즈마 표면 처리 된 모든 시편에서 초기 젖음각은 $10{\sim}20^{\circ}$의 친수성 성질을 보였지만, 점차 젖음각이 상승하여 산소 플라즈마 처리 된 Si-DLC를 제외하고는 5일이 지나면서 거의 소수성 표면으로 회복되었다. 산소 플라즈마 처리 된 Si-DLC의 경우, 젖음 각 측정 기간(20일) 동안 $15^{\circ}$ 미만의 친수성 성질을 유지하였다.

• The Journal of the Petrological Society of Korea
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• v.6 no.2
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• pp.123-132
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• 1997

In the system $MgO-SiO_2-H_2O$, Talc[$Mg_3Si_4O_{10}(OH)_2$] has been synthesized hydrothermally at 200 MPa, $600^{\circ}C$ from the oxide mixture of the bulk composition of talc. The oxide mixture of the bulk composition of anthophyllite$[Mg_7Si_8O_{22}(OH)2]$ converted to talc, enstatite $(MgSiO_3)$, quartz at 200 MPa, $750^{\circ}C$ with excess of $H_2O$. In low to medium pressure metramorphism, enstatite-talc assemblage is metastable relative to anthophyllite with the reaction talc + 4 enstatite=anthophyllite (Greenwood, 1963). The high temperature stability of talc is bounded with the dehydration reaction to anthophyllite rather than that to enstatite(Greenwood, 1963; Chernosky et al., 1985). Therefore our experiment result assemblage, enstatite-talc-quatz at 200 MPa, $750^{\circ}C$ from oxide mixture of bulk compostion of anthophyllite is metastable assemblage. The hydrothermal experiment performed at 41 to 243 MPa, 680 to $760^{\circ}C$ with the starting material composed of synthetic talc, enstatite and quartz. Talc or enstatite grows during the runs and no extra phases including anthophyllite nucleated. Based on the increase or decrease of the each phase from run products, one of the possible reactions is talc=3 enstatite+quartz+H_2O$. The reversal bracket of the reaction is 699 to $700^{\circ}C$ at 100 MPa. Talc is stable up to $740^{\circ}C$ at 200 MPa and enstatite grow at $680^{\circ}C$, 40 MPa and at $760^{\circ}C$, 250 MPa. Though the high temperature limit of talc around 200 MPa is bounded thermodynamically by the reaction, 7 talc=3 anthophyllite+4 quartz+4 H_2O$, talc persisted throughout the previous reaction up to the reaction, talc=3 enstatite+quartz+$H_2O$.

• The Journal of the Petrological Society of Korea
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• v.25 no.4
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• pp.361-372
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• 2016

Lahar, one of catastrophic events, has the potential to cause the loss of life and damage to infrastructure over inhabited areas. This study using Laharz_py program, was performed schematic prediction on the impact area of lahar hazards at the Mt. Halla volcano, Jeju island. In order to comprehensively address the impact of lahar for the Mt. Halla, two distinct parameters, H/L ratio and lahar volume, were selected to influence variable for Laharz_py simulation. It was carried out on the basis of numerical simulation by estimating a possible lahar volumes of 30,000, 50,000, 70,000, 100,000, 300,000, $500,000m^3$ according to H/L ratios (0.20, 0.22 and 0.25) was applied. Based on the numerical simulations, the area of the proximal hazard zone boundary is gradually decreased with increasing H/L ratio. The number of streams which affected by lahar tended to decrease with increasing H/L ratio. In the case of H/L ratio 0.20, three streams (Gwangryeong stream, Dogeun stream, Han stream) in the Jeju-si area and six streams (Gungsan stream, Hogeun stream, Seohong stream, Donghong stream, Bomok stream, Yeong stream-Hyodon stream) in the Seogwipo-si area are affected. In the case of H/L ratio 0.22, two streams (Gwangryeong stream and Han stream) in the Jeju-si area and five streams (Gungsan stream, Seohong stream, Donghong stream, Bomok stream, Yeong stream-Hyodon stream) in the Seogwipo-si area are affected. And in the case of H/L ratio 0.25, two streams (Gwangryeong stream and Han stream) in the Jeju-si area and one stream (Yeong stream-Hyodon stream) in the Seogwipo-si area are affected. The results of this study will be used as basic data to create a risk map for the direct damage that can be caused due to volcanic hazards arising from Mt. Halla.

• Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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• 2006.11a
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• pp.166-168
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• 2006

$Si_3N_4/SiC$ composite ceramics was sintered in order to investigate their bending strength behavior after crack healing. $Y_2O_$ and $TiO_2$ power was added as sintering additives to enhance it's sintering property. A three-point bending specimen was cut out from sintered plates. About $100\;{\mu}m$ semi-circular surface cracks were made on the center of the tension surface of the three-point bending specimen using Vickers indenter. After the crack-healing processing from $500^{\circ}C$ to $1300^{\circ}C$, for 1 h, in air, the bending strength behavior of these crack-healed specimen coated with $SiO_2$ colloidal were determined systematically at room temperature. $Si_3N_4/SiC$ ceramics using additive powder ($Y_2O_3+TiO_2$) was superior to that of additive powder $Y_2O_3$. The additive powder $TiO_2$ exerted influence at growth of $Si_3N_4$. The optimum crack healing conditions coated $SiO_2$ colloidal were $1000^{\circ}C$ at $Si_3N_4/SiC$ using additive powder ($Y_2O_3+TiO_2$), and $1300^{\circ}C$ at $Si_3N_4/SiC$ using additive powder $Y_2O_3$.