• Title/Summary/Keyword: H-Si(100)

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Deposition properties of $Al_{2}O_{3}$ thin films by LP-MOCVD (LP-MOCVD로 제조한 알루미나 박막의 증착 특성)

  • 김종국;박병옥;조상희
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.6 no.3
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    • pp.309-317
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    • 1996
  • Al2O3 thin films were deposited on Si-wafer (100) using organo-aluminum compounds at low pressure by chemical vapor deposition (CVD) method. The vapor of the organo-metallic precursor was carried by pure N2 gas. The deposition rate increased and then saturated as Tsub increased with increasing the AIP flow rate. The main contamination didn't found in deposited films except carbon. The H-O(H2O) IR absorption band decreased in intensity as the deposition temperature increased, and completely disappeared through annealing.

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Structural and Magnetic Properties of Co2MnSi Heusler Alloy Films

  • Lim, W.C.;Okamura S.;Tezuka N.;Inomata K.;Bae, J.Y.;Kim, H.J.;Kim, T.W.;Lee, T.D.
    • Journal of Magnetics
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    • v.11 no.1
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    • pp.8-11
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    • 2006
  • Recently half-metallic full-Heusler alloy films have attracted significant interests for spintronics devices. As these alloys have been known to have a high spin polarization, very large TMR ratio is expected in magnetic tunnel junctions. Among these alloys, $Co_2MnSi$ full-Heusler alloy with a high spin polarization and a high Curie temperature is considered a good candidate as an electrode material for spintronic devices. In this study, the magnetic and structural properties of $Co_2MnSi$ Heusler alloy films were investigated. TMR characteristics of magnetic tunnel junctions with a $Co_2MnSi/SiO_2/CoFe$ structure were studied. A maximum MR ratio of 39% with $SiO_2$ substrates and 27% with MgO(100) substrates were obtained. The lower MR ratio than expectation is considered due to off-stoichiometry and atomic disorder of $Co_2MnSi$ electrode together with oxidation of the electrode layer.

A Study on SiC Buffer Layer Prepared by Ultra High Vacuum Electron Cyclotron Resonance CVD (초고진공 전자공명 플라즈마를 이용한 SiC buffer layer 형성에 관한 연구)

  • Joen, Woo-Gon;Pyo, Jae-Hwak;Whang, Ki-Woong
    • Proceedings of the KIEE Conference
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    • 1995.11a
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    • pp.326-328
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    • 1995
  • SiC buffer layers were grown on Si(100) substrates by ultra-high-vacuum electron cryclotron resonance plasma (UHV ECR plasma) from $CH_4/H_2$ mixture at 700$^{\circ}C$. The electron densities and temperature were measured by single probe. The axial plasma potentials measured by emissive probe had the double layer structure at positive substrate bias. Piranha cleaning was carried out as ex-situ wet cleaning. Clean and smooth silicon surface were prepared by in-situ hydrogen plasma cleaning at 540$^{\circ}C$. A short exposure to hydrogen plasma transforms the Si surface from 1$\times$1 to 2$\times$1 reconstruction. It was monitored by reflection high energy electron diffraction (RHEED). The defect densities were analysed by the dilute Schimmel etching. The results showed that the substrate bias is important factor in hydrogen plasma cleaning. The low base pressure ($5\times10^{-10}$ torr) restrains the $SiO_2$ growth on silicon surface. The grown layers showed different characteristics at various substrate bias. RHEED and K-ray Photoelectron spectroscopy study showed that grown layer was SiC.

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Preferred Orientation and SAW Characteristics of AIN Films Deposited by Reactive RF Magnetron Sputtering (반응성 RF 마그네트론 스퍼터링 법으로 증착된 AIN박막의 우선 배향성 및 표면 탄성파 특성에 관한 연구)

  • Seo, Ju-Won;Lee, Won-Jong
    • Korean Journal of Materials Research
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    • v.7 no.6
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    • pp.510-516
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    • 1997
  • 반응성RF 마그네트론 스퍼터링 법으로 상온에서 c-축으로 우선 배향된 AIN 박막을 여러 기판 위에 증착하였다. SiO$_{2}$/Si, Si$_{3}$N $_{4}$Si, Si(100), Si(111)그리고 $\alpha$-AI$_{2}$O$_{3}$(0001) 기판에서 AIN(0002)로킹커브 피크의 표준편차는 각각 2.6˚, 3.1˚2.6˚, 2.5˚ 그리고 2.1˚ 의 값을 나타내었다. $\alpha$-AI$_{2}$O$_{3}$(0001) 기판에 증착된 AIN박막은 epitaxial 성장을 나타내었다. Si기판에 증착된 AIN박막에서 측정된 비저항과 1MHz 주파수에서 측정된 유전상수의 값은 각각 $10^{11}$Ωcm와 9.5였다. IDT/AIN/$\alpha$-AI$_{2}$O$_{3}$(0001)구저를 갖는 지연선 소자의 표면 탄성과 특성을 측정하였다. 상 속도, 전기기계 결합계수 그리고 전파손실은 H/λ가 0.17-0.5 범위에서 각각 5448-5640m/s, 0.13-0.17% 그리고 0.41-0.64dB/λ의 값을 나타내었다.다.

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Corrosion Behavior of Ytterbium Silicates in Water Vapor Atmosphere at High Temperature for Environmental Barrier Coating Applications (환경차폐코팅용 이터븀 실리케이트의 고온 수증기부식 거동)

  • Min-Ji Kim;Jae-Hyeong Choi;Seongwon Kim
    • Journal of Surface Science and Engineering
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    • v.56 no.6
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    • pp.443-450
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    • 2023
  • SiC/SiCf CMC is vulnerable to water vapor corrosion at a high temperature of 1500℃. So, EBC (Environmental Barrier Coating) materials are required to protect Si-based CMCs. Ytterbium silicates are reported to have coefficient of thermal expansion (CTE) similar to that of the base material, such as SiC/SiCf CMC. When the EBC are materials exposed to high temperature environment, the interface between ytterbium silicates and SiC/SiCf CMC is not separated, and the coating purpose can be safely achieved. For the perspective of EBC applications, thermally grown oxide (TGO) layer with different CTE is formed by the reaction with water vapor in EBC, which leads to a decrease in life time. In this study, we prepare two types of ytterbium silicates to observe the corrosion behavior during the expose to high temperature and water vapor. In order to observe this behavior, the steam-jet furnace is prepared. In addition, phase formation of these ytterbium silicates is analyzed with microstructures by the before/after steam-jet evaluation at 1500℃ for 100 h.

The Crystallization of ZSM-5 at Low Temperature and Atmospheric Pressure (저온 상압하에서 ZSM-5의 결정화 반응)

  • Kim, Wha Jung;Lee, Myung Churl;Kim, Jo Woong;Ha, Jae Mok
    • Applied Chemistry for Engineering
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    • v.8 no.2
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    • pp.320-331
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    • 1997
  • ZSM-5 was crystallized at low temperature and atmospheric pressure using reflux unit. The overall molar composition used in this study was $7.83Na_2O-0.25Al_2O_3-100SiO_2-xTPABr-yH_2O$ where x is 1 and 3 mol, and y is 3000 mol, 3500 mol, and 4000 mol. $2^3$ factorial experiments were performed with the results of kinetics studies, showing $Na_2O$, TPABr, and $H_2O$ as main factors. The result suggested that the concentration of $H_2O$ is the most important. The morphology of final product was very uniform showing well-defined crystals with BET surface area of ca. $410m^2/g$.

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Spinnability and Rheological Properties of Sols Derived from Si(OC2H5)4 and Zr(O-nC3H7)4 Solutions

  • HAN, SANG-MOK
    • Journal of Industrial Technology
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    • v.20 no.A
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    • pp.29-36
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    • 2000
  • The shape of the polymers in the mixed alkoxide solutions of Si(OC2H5)4 and Zr(n-OC3H7)4 with various water contents (1, 2, 4, and 8 in molar ratio to alkoxide, r) and catalysts was examined by rheological measurements, and its relation with fiber drawing behavior of the solutions was described. It was found that fibers could be drawn in the viscosity range 1~100 P from the acid-catalyzed solutions with lower water contents of the molar ratio H2O/alkoxide, $r{\leq}2$. On the other hand, no fiber could be drawn from the acid-catalyzed solutions including a large amount of water($r{\geq}4$) and the base-catalyzed solutions. The relation between the intrinsic viscosity [${\eta}$] and number average molecular weight ${\bar{M}}n$, namely $[{\eta}]=K{\bar{M}}n{\alpha}$, has shown that the acid-catalyzed spinnable solution (r = 1 and 2) had linear polymers where the exponent a's were about 0.56 and 0.81, whereas non-spinnable solutions (r = 4 and 8) had three dimensional network polymers or spherical particles where the exponent a's were 0.41-0.51 and 0.35.

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A Study of CO, $C_{3}H_{6}$, and $SO_{2}$ oxidation for Diesel Emission Control over Pt, Pd, Pt-W and Pd-w Catalysts and their Characterization (디젤 자동차 배출 가스 저감을 위한 Pt, Pd 촉매의 특성 분석 및 W 첨가에 따른 CO, $C_{3}H_{6}$, $SO_{2}$ 산화 반응 활성에 관한 연구)

  • 임재영;김태원;정우식;김경림
    • Journal of Korean Society for Atmospheric Environment
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    • v.12 no.2
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    • pp.121-130
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    • 1996
  • The catalysts composed of Pt, Pd and W as active-components, $Al_{2}O_{3}$ and $SiO_{2}$ as supports, were perpared on the honeycomb type substrate and characterized by BET, SEM, TGA, FT-IR and XRD for diesel emission control. CO, $C_{3}H_{6}$, and $SO_{2}$ oxidation was carried out over these catalysts in a fixed bed continuous flow reactor at the temperatures between 100-500.deg.C and reactant gas was composed of 10 vol.% $O_{2}$, 1 vol.% CO, 0.8 vol.% $C_{3}H_{6}$ and 88.2 vol.% $N_{2}$. It was found that under these experimental conditions, the CO, $C_{3}H_{6}$ oxidation activity of Pt-W catalyst was higher than that of any other prepared catalyst, and this catalyst had also a good inhibition effect on $SO_{2}$ oxidation. Also it was show that the influence of $SO_{2}$ on $Al_{2}O_{3}$ was more sever than that of $SO_{2}$ on $SiO_{2}$.

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