• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.205.2-205.2
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• 2014

The effects of ion beam mixing of a SiC film coated on super alloys (hastelloy X substrates) were studied, aiming at developing highly sustainable materials at above $900^{\circ}C$ in decomposed sulfuric acid gas (SO2/SO3/H2O) channels of a process heat exchanger. The bonding between two dissimilar materials is often problematic, particularly in coating metals with a ceramics protective layer. A strong bonding between SiC and hastelloy X was achieved by mixing the atoms at the interface by an ion-beam: The film was not peeled-off at ${\geq}900^{\circ}C$, confirming excellent adhesion, although the thermal expansion coefficient of hastelloy X is about three times higher than that of SiC. Instead, the SiC film was cracked along the grain boundary of the substrate at above $700^{\circ}C$. At ${\geq}900^{\circ}C$, the film was crystallized forming islands on the substrate so that a considerable part of the substrate surface could be exposed to the corrosive environment. To cover the exposed areas and cracks multiple coating/IBM processes have been developed. An immersion corrosion test in 80% sulfuric acid at $300^{\circ}C$ for 100 h showed that the weight retain rate was gradually increased when increasing the processing time.

• Journal of the Korean Vacuum Society
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• v.5 no.1
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• pp.25-32
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• 1996

An ERD-TOF system is constructed for the nondestructive depth profiling of light elements in thin films in the range of several thousand angstroms. The particles, recoiled by 10 $MeV^{35}Cl$ projectiles, were detected by a Time-Of-Flight spectrometer composed of a MCP (Micro Channel Plate) and a SSB (Silicon Surface Barrier) detector. A two parameter data acquisition system composed of two PC's was constructed for registering simultaneous time and energy signals. A $Si_3N_4$/poly-Si/$SiO_2$/Si sample was anlayzed and the result is compared with RBS. The detection limit, maximum probable depth and depth resolution for light elements in silicon are about $4\times10^{14}atoms/\textrm{cm}^2$, 5, 000$\AA$ and 100$\AA$, respectively.

• Journal of information and communication convergence engineering
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• v.2 no.2
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• pp.93-96
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• 2004

The a-Si:H TFT using ferroelectric of $SrTiO_3$ as a gate insulator is fabricated on glass. Dielectric characteristics of ferroelectric are superior to $SiO_2$ and $Si_{3}N_{4}$. Ferroelectric increases on-current, decreases threshold voltage of TFT and also improves breakdown characteristics. The a-SiN:H has optical band gap of 2.61 eV, retractive index of 1.8∼2.0 and resistivity of $10^{13}$~$10^{15}$ $\Omega$cm, respectively. Insulating characteristics of ferroelectrics are excellent because dielectric constant of ferroelectric is about 60∼100 and breakdown strength is over 1MV/cm. TFT using ferroelectric has channel length of 8∼20 $\mu\textrm{m}$ and channel width of 80∼200 $\mu\textrm{m}$. And it shows that drain current is 3.4$\mu\textrm{A}$ at 20 gate voltage, $I_{on}$/$I_{off}$ is a ratio of $10^5$~$10^8$ and $V_{th}$ is 4∼5 volts, respectively. In the case of TFT without ferroelectric, it indicates that the drain current is 1.5 $\mu\textrm{A}$ at 20 gate voltage and $V_{th}$ is 5∼6 volts. With the improvement of the ferroelectric thin film properties, the performance of TFT using this ferroelectric has advanced as a gate insulator fabrication technology is realized.

• Korean Journal of Food Science and Technology
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• v.32 no.2
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• pp.431-438
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• 2000

Properties of acid tolerance of an adipic acid-resistant mutant, Leuconostoc paramesenteroides (ANaP100) were studied and compared with those of its paired wild type of Leu. paramesenteroides (LPw). The value of protons permeability of LPw after an acid shock at pH 5.0 was 4.3 min, while the value of ANaP100 was 4.8 min at the same pH. The maximal specific activities of ATPase of LPw and ANaP100 were 0.59 unit/mg protein and 0.63 unit/mg protein at pH 6.0, respectively. The release of magnesium ion from the mutant strain was about 27.3% at pH 4 after 2 hrs, while the wild strain was about 52.2% under the same conditions. The contents of $C_{19:0,cyclo}$ and $C_{18:1}$ in a membrane fatty acid of ANaP100 and LPw were higher and lower, respectively, than that of LPw. These results indicated that acid tolerance of ANaP100 was improved in comparison with that of its wild type, LPw.

• Journal of Magnetics
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• v.8 no.1
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• pp.32-35
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• 2003

Magnetic funnel Junctions (MTJs) were fabricated on thermally oxidized Si (100) wafers using DC magnetron sputtering. The film Structures were Ta(50 ${\AA}$)/CU(100 ${\AA}$)$Ni_{80}Fe_{20}(20 $ ${\AA}$)/Cu(50 ${\AA}$)/$Mn_{75}Ir_{25}(100 $ ${\AA}$)/$Co_{70}Fe_{30}(25$ ${\AA}$)/Al-O(15 ${\AA}$)/$Co_{70}Fe_{30}(25 $ ${\AA}$)/$Ni_{80}Fe_{20}(t)/Ta(50 $ ${\AA}$), with t=0 ${\AA}$, 100 and 1000 ${\AA}$, respectively. X-ray diffraction has shown improvement of (111) texture of IrMn$_3$ and Cu by annealing. The exchange-biased energy is almost inversely proportional to temperature. The difference between the coercivity H$_c$ and the exchange biased field H$_E$ for t = 0 $_3$ sample is smaller than that for t = 1000 ${\AA}$. For the pinned layer, the decreasing rate of the coercivity with the temperature is higher compared to that of the exchange field, but variation of H$_c$ is similar to that of the exchange field for free layer.

• Journal of the Korean Vacuum Society
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• v.6 no.3
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• pp.194-199
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• 1997

We fabricated MIM (Metal-Insulator-Metal) antifuses with Al/a-Si/Mo structure and then examined the I-V characteristics and on-state resistance distribution of antifuses. The leakage current of antifuses is below $1Pa/{\mu}m^2$, and programming voltage lies within 10 to 11 V. After programming, on-resistance of antifuses is mostly 10-20$\Omega$ and 20% of these have above 100$\Omega$. In order to reduce on-resistance and the deviation of this distribution, we tried to inject current again into already programed antifuses (we call this re-programming method). From this method, the resistance of antifuses with above 100Ω can be reduced to below 50$\Omega$. When antifuses are programmed by re-programming method, these antifuses have more uniform and lower on-resistance than programmed with one-pulse.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.396-399
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• 2003

4H-SiC un diodes with field limiting rings(FLRs) were fabricated and characterized. The dependences of reverse breakdown voltage on the number of FLRs, the distance between p-base main junction and first FLR, and activation temperatures, were investigated. Al and B ions were implanted and activated at high temperature to form p-base region and p+ region in the n-epilayer. We have obtained up to 1782V of reverse breakdown voltage in the un diode with two FLRs on loom thick epilayer. The differential on-resistances of the fabricated diode are $5.3m{\Omega}cm^2$ at $100A/cm^2$ and $2.7m{\Omega}cm^2$ at $1kA/cm^2$, respectively. All pn diodes with FLRs have higher avalanche breakdown voltages than that of diode without an FLR. Regardless of the activation temperature, the un diode with a FLR located 5um apart from main junction has the highest mean breakdown voltage around 1600V among the diodes with one ring. On the other hand, the pn diode with two rings showed different behavior with activation temperature. It reveals that high voltage SiC pn diodes with low on-resistance can be fabricated by using the FLR edge termination.

• Journal of the Korean Vacuum Society
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• v.6 no.1
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• pp.91-96
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• 1997

The electrical characteristics and the plasma parameters of planar inductively coupled plasmas (ICP) have been measured. The resistance of the total load including the coil and the plasma varied from 1 to 4 W and the inductance from 1.5 m to 2 mH when the power was changed from 100 to 1000 W and the pressure from 1 to 10 mTorr. The density of electron measured by Langmuir probe was over $10^{11}/\textrm{cm}^3$ and the temperature varied between 3 and 5 eV as the process conditions were changed. Bias modulation was adopted as a new method to improve the selectivity of $SiO_2$on Si in $C_4F_8$ (octafluorocyclobutane) plasma. The selectivity was improved as the duty ratio decreased, but the etch rate of $SiO_2$decreased below 400$\AA$/min. $H_2$addition to $C_4F_8$ plasma showed that the etch selectivity could be higher than 50 and the etch rate of $SiO_2$over 2000$\AA$/min when 60% $H_2$was added.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.09a
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• pp.193-196
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• 2005

Low resistance Ni thin films for using NiSi formation and metallization by atomic layer deposition (ALD) method have been studied. ALD temperature window is formed between $200^{\circ}C\;and\;250^{\circ}C$ with deposition rate of $1.25{\AA}$/cycle. The minimum resistance of deposited Ni films shows $4.333\;{\Omega}/\square$ on the $SiO_2/Si$ substrate by $H_2$ direct purging process. The reason of showing the low resistance is believed to be due to format ion of the $Ni_3C$ phase by residual carbon in Bis-Ni The deposited film exhibits excellent step coverage in the trench having 1(100 nm) : 16 (1.6 um) aspect ratio.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.3
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• pp.87-95
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• 1992

The electrical characteristics of Al/TaS12TOS15T/SiOS12T/Si metal insulator-semiconductor (MIS) capacitors were studied. Tantalum pentoxide thin films on SiOS12T/p-Si substrate have been prepared by thermal oxidation at 450-$600^{\circ}C$ of sputter deposited tantalum films. Composition and structures of the tantalum oxide films were examined by AES and XRD. From the C-V analysis, dielectric constant of TaS12TOS15T which were oxidized at 55$0^{\circ}C$ for 1h in OS12T were 18-23, the value depending on the oxidation and annealing temperature. The leakage current density was found to be about 10S0-10T-10S0-9T A/cmS02T at an applied electric field of 1 MV/cm. The dielectric breakdown strength of the tantalum oxide films annealed at 100$0^{\circ}C$ were in the range from 2.5MV/cm to 2.8 MV/cm.