• Mineral and Industry
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• v.25
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• pp.1-10
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• 2012

In this present work, the froth flotation of lithium ore from Boam mine located in Wooljin, Kyungbuk has been carried out to produce high-grade lithium concentrate. The sample ore-Lepidolite mainly contained silicate mineral (quartz, muscovite) and calcite. In consequences of the experiment, it has been possible to obtain relatively high-grade lithium while using anionic acid (oleic acid) to remove calcite before the froth flotation for lithium concentrate. Among the amines collectors (Armac-T, Armac-C, Armafloat-18, Armafloat-1597), Armac-T has been relatively effective than another ones. Under the optimum condition (collector : Armac-T 100g/t, frother : AF65 50g/t, depressants : $Na_2SiO_3$ 600g/t and Lactic acid 100g/t, pulp density : 20%, pH 5.5, number of cleaning : 2), it has been obtained relatively high-grade lithium concentrate ($Li_2O$) with recovery of 80.3% and with grade of 4.33%.

• Resources Recycling
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• v.29 no.5
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• pp.48-54
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• 2020

Sulphuric acid (H₂SO₄) leaching and hydrolysis were experimented for the recovery of titanum dioxide (TiO₂) from the water-leached residue followed by soda-roasting spent SCR catalysts. Sulphuric acid leaching of Ti was carried out with leachate concentration (4~8 M) and the others were fixed (temp.: 70 ℃, leaching time: 3 hrs, slurry density: 100 g/L, stirring speed: 500 rpm). For recovering of Ti from the leaching solution, hydrolysis precipitation was conducted at 100 ℃ for 2 hours in various mixing ratio (leached solution:distilled water) of 1:9 to 5:5. The maximum leachability was reached to 95.2 % in 6 M H₂SO₄ leachate. on the other hand, the leachability of Si decreased dramatically 91.7 to 3.0 % with an increase of H₂SO₄ concentration. Hydrolysis precipitation of Ti was proceeded with leaching solution of 8 M H₂SO₄ with the lowest content of Si. The yield of precipitation increased proportionally with a dilution ratio of leaching solution. Moreover, it increased generally by adding 0.2 g TiO₂ as a precipitation seed to the diluted leaching solution. Ultimately, 99.8 % of TiO₂ can be recovered with the purity of 99.46 % from the 1:9 diluted solution.

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.106-117
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• 1998

Fluorocarbonated-SiO2 films were deposited on p-type Si(100) substrate using FSi$(OC_2H_5)_3$ (FTES), and $O_2$ mixture gases by a helicon plasms source. High density $O_2$/FTES/Ar plasma of ~$10^{12} \textrm{cm}^{-3}$ is obtained at low pressure (<3mTorr) with RF power above 900 W in the helicon plasma source. Optical emission spectroscopy (OES) is used to study the relation between the relative densities of the radicals and the film properties. The FTES and $O_2$ gases are greatly dissociated at the helicon mode that is launched at the above threshold plasma density. FTIR and XPS spectra shows that the film has Si-F, and C-F bonds during the formation process of the film which may lower the dielectric constant greatly. The relative dielectric constant, leakage current density, and dielectric breakdown voltage are about 2.8, $8\times10^{-9}\textrm{A/cm}^2$, and > 12 MV/cm, respectively.

• Journal of the Korean Vacuum Society
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• v.13 no.4
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• pp.150-156
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• 2004

Boron nitride thin films were deposited on Si(100) substrate by RF (Radio-frequency) UBM (Unbalanced Magnetron) sputtering system. The effect of working pressure and substrate bias voltage on microstructure and compressive stress of boron nitride thin films has been investigated. In high working pressure, the alignment of hBN laminates increased with substrate bias voltage, in low working pressure, however, it was high in low substrate bias voltage. Compressive stress evolution and surface morphology of deposited BN films are closely related with the alignment of hBN laminates. The cBN phase without high compressive stress could be nucleated on hBN thin film by controlling the alignment of hBN laminates.

• Korean Journal of Soil Science and Fertilizer
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• v.17 no.2
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• pp.173-178
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• 1984

Correlation study was conducted to establish the optimum test level of soil improvement for good growth of corn from the relationships between the corn yield and soil chemical properties in 16 farmers' demonstration fields. Significant positive correlations between the corn yield and soil chemical properties ; pH, available phosphorus, exchangeable potassium, calcium, magnesium, cation exchange capacity. available silica, and base saturation percentage were showed but organic matter and nitrogen content were not. The proper nutrient contents in soil for expecting corn yield, 1.000kg/10a could be estimated as pH 5.6, available phosphorus 327ppm, exchangeable potassium 0.39me/100g, exchangeable calcium 5.5me/100g, exchangeable magnesium 1.3me/100g, cation exchange capacity 11.5me/100g, available silica 116ppm, base saturation percentage 58 from the relationships between the corn yield and soil chemical properties. Exchangeable aluminium were negatively correlated with not only corn yield but also pH, available phosphorus, exchangeable potassium and exchangeable calcium.

• Journal of the Korean Magnetics Society
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• v.12 no.5
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• pp.184-188
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• 2002

The Cu/Ni/Cu(002)/Si(100) films which have perpendicular magnetic anisotropy were deposited by e-beam evaporation methods. From the reflection high energy electron diffraction pattern, the films were confirmed to be grown epitaxially on silicon. After 2X lots ions/$\textrm{cm}^2$ C+ irradiation, magnetic easy-axis was changed from surface normal to in-plane as shown in the hysteresis loop of magneto-optical Kerr effects. It became manifest from analysis of X-ray reflectivity and grazing incident X-ray diffraction that even though interface between top Cu layer and Ni layer became rougher, the contrast of Cu and Ni's electron density became manifest after ion irradiation. In addition, the strain after deposition of the films was relaxed after ion irradiation. Strain relaxation related with change of magnetic properties and mechanism of intermixed layer's formation was explained by thermo-chemical driving force due to elastic and inelastic collision of ions.

• Journal of the Korean Vacuum Society
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• v.6 no.S1
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• pp.154-159
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• 1997

The crystal structure properties of TiN thin films deposited on SKD61 steel and Si(100) substrates by Ion Beam Assisted Deposition have been studied to clarify the thin film growth mechanism by using XRD, RBS, SEM, and AFM. The preferred orientation of TiN thin films changes from (111) to (100) as increasing the assisted energy. This tendency is independent of the substrate structure. The TiN thin film grow with (100) direction having surface free energy minimum as the assisted energy increases.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.67-68
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• 2008

In this study we have developed a packaged silicon carbide power diode with blocking voltage of 2kV. PiN diodes with 7 field limiting rings (FLRs) as an edge termination were fabricated on a 4H-SiC wafer with $30{\mu}m$-thick n-epilayer with donor concentration of $1.6\times10^{15}cm^{-3}$. From packaged PiN diode testing, we obtained reverse blocking voltage of 2kV, forward voltage drop of 4.35V at 100A/$cm^2$, on-resistance of $6.6m{\Omega}cm^2$, and about 8 nanosec reverse recovery time. These properties give a potential for the power system application.

• Journal of Korean Vacuum Science & Technology
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• v.2 no.1
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• pp.49-54
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• 1998

The effect of deposition paratmeters on the solid-phase crystallization of amorphous silicon films deposited by plasma-enhanced chemical vapor deposition has been investigated by x-ray diffraction. The amorphous silicon films were prepared on Si(100) wafers using SiH4 gas with and without H2 dilution at the substrate temperatures between 12$^{\circ}C$ and 38$0^{\circ}C$. The R. F. powers and the deposition pressures were also varied. After crystallizing at $600^{\circ}C$ for 24h, the films exhibited (111), (220), and (311) x-ray diffraction peaks. The (111) peak intensity increased as the substrate temperature decreased, and the H dilution suppressed the crystallization. Increasing R.F. powers within the limits of etching level and increasing deposition pressures also have enhanced the peak intensity. The peak intensity was closely related to the deposition rate, which may be an indirect indicator of structural disorder in amorphous silicon films. Our results are consistent with the fact that an increase of the structural disorder I amorphous silicon films enhances the grain size in the crystallized films.

• Journal of Industrial Technology
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• v.4
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• pp.37-41
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• 1984

Deposits of SiC has been formed by a chemical vapor deposition technique involving the application of gaseous mixture of $CH_3SiCl_3$ (MTS) and $H_2$ onto graphite substrate. These are non-fluid bed deposits prepared in an induction-heated reactor. From the experimental results, the deposition reaction of SiC is controlled by surface reaction mechanism at the temperature range between $1,100^{\circ}C$ and $1,400^{\circ}C$. The morphology of the SiC deposits changes from amorphous type to coarse, faceted structure as temperature increase.