• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.196-196
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• 2008

We have investigated that the effect of post annealing on the structural and electrical properties of $Ba_{0.5}Sr_{0.5}TiO_3$ thin films. The BST thin films were deposited on n-type 4H-silicon carbide(SiC) using pulsed laser deposition (PLD). The deposition was carried out in oxygen ambient 100mTorr for 5 minutes, which results in about 300nm-thick BST films. For the BST/4H-SiC, 200nm thick silver was deposited on the BST films bye-beam evaporation. The X-ray diffraction patterns of the BST films revealed that the crystalline structure of BST thin films has been improved after post-annealing at $850^{\circ}C$ for 1 hour. The root mean square (RMS) surface roughness of the BST film measured by using a AFM was increased after post-annealing from 5.69nm to 11.49nm. The electrical properties of BST thin film were investigated by measuring the capacitance-voltage characteristics of a silver/BST/4H-SiC structure. After the post-annealing, dielectric constant of the film was increased from 159.67 to 355.33, which can be ascribed to the enhancement of the crystallinity of BST thin films.

• Journal of the Semiconductor & Display Technology
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• v.21 no.2
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• pp.123-126
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• 2022

We investigated deep levels in n-type 4H-SiC epitaxy layer of the Positive-Intrinsic-Negative diode and Schottky barrier diodes by using deep level transient spectroscopy. Despite the excellent performance of 4H-SiC, research on various deep level defects still requires a lot of research to improve device performance. In Positive-Intrinsic-Negative diode, two defects of 196K and 628K are observed more than Schottky barrier diode. This is related to the action of impurity atoms infiltrating or occupying the 4H-SiC lattice in the ion implantation process. The I-V characteristics of the Positive-Intrinsic-Negative diode shows about ~100 times lower the leakage current level than Schottky barrier diode due to the grid structures in Positive-Intrinsic-Negative. As a result of comparing the capacitance of devices diode and Schottky barrier diode devices, it can be seen that the capacitance value lowered if it exists the P implantation regions from C-V characteristics.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.2
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• pp.99-104
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• 2017

Refractories used in low-rank coal gasification reactors are usually exposed in a highly corrosive $H_2S$ gas at less than $1000^{\circ}C$, and their mechanical properties such as erosion resistance and fracture strength decline with the exposure time. However, the cause of the degradation of the mechanical properties has little reported yet. In this paper, two kinds of castable refractories with different refractoriness had been exposed in a $H_2O/N_2/H_2S$ mixed gas with high $H_2S$ content for 100 hours at $900^{\circ}C$, and the changes of microstructure, crystalline phases and erosion resistance were compared before and after the corrosion test. The weight of the refractories decreases due to the elution of silica in the specimens after the corrosion test. The capillary porosities of the samples are reduced, but the erosion resistance of the samples is fatally weakened after the corrosion test. There also are changes in constituent phases; dmitryivanovite ($CaAl_2O_4$) and amorphous silica ($SiO_2$) disappear, and gypsum ($CaSO_4{\cdot}2H_2OS$) and kaolinite ($Al_2Si_2O_5(OH)_4$) newly appear after the corrosion test. It is obvious that the phase change from dmitryivanovite that works as a binding agent in the castable refractory to gypsum is the main reason of the degradation of the erosion resistance, because the mechanical properties of gypsum are much poorer than those of dmitryivanovite.

• Proceedings of the Korean Vacuum Society Conference
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• 1994.06a
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• pp.126-126
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• 1994

• Proceedings of the Korean Vacuum Society Conference
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• 2001.07a
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• pp.74-74
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• 2001

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.4
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• pp.665-672
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• 1997

We applied mechanical alloying process by ball milling to produce molybdenum silicides $MoSi_2$ and $Mo_5Si_3$ using a mixture of elemental molybdenum and silicon powders at room temperature. The intermetallic compound MoSi$_3$ have been obtained by ball milling of $Mo_{33}Si_{67}$ mixture powders for 100 h, which is transformed to single $MoSi_2$ phase by subsequent heat treatment up to $725^{\circ}C$. The grain size of the $MoSi_2$ powders thus obtained was 19 nm, being approximately four times smaller than that of the commercial alloy. The intermetallic compound $MoSi_2$ with grain size of 30 nm have been also obtained by ball milling of $Mo_{62}Si_{38}$ mixture powders for 500 h, which is transformed to single $MoSi_2$ phase by heating up to $1000^{\circ}C$. We believe that the retarded ball milling time for the formation of $MoSi_2$ phase is attributed to its complicated crystal structure and large unit cell. The finer grain size in the ball-milled molybdenum silicides powders is expected to improve room-temperature mechanical properties for high-temperature structural materials.

• Journal of the Korean Ceramic Society
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• v.38 no.4
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• pp.365-369
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• 2001

플라즈마 화학증착법(PECVD)에 의해 실리콘 (100) 기판 위에 3C-SiC막을 증착하였다. 증착반응시 유입가스비, R$_{x}$[=CH$_4$/(CH$_4$+H$_2$)]에 따른 증착막의 결정성에 대해 검토하였다. 증착된 3C-SiC막의 결정성은 R$_{x}$ 값이 감소할수록 더욱 향상되었으며, 형성된 결정상은 (111) 면으로 최대의 우선배향성을 가졌다. Nanoindentation 방법을 이용하여 3C-SiC막의 압입깊이에 따른 경도 및 탄성계수를 측정하였으며, 유입가스비(R$_{x}$)의 변화에 따라서 막의 경도 및 탄성계수가 뚜렷이 변화하였다.

• Journal of the Korean Ceramic Society
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• v.31 no.10
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• pp.1169-1175
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• 1994

Five Al2O3/SiC/metal composites with four different particle sizes of green SiC abrasive grains are grown by the directed oxidation of an commercially available Al-alloy. Oxidation was conducted in air at 100$0^{\circ}C$, 96 hours long. Slip casted SiC-fillers were placed on the alloy or SiC powder deposited up to the required layer thickness. Their microstructures are described and measurements of density, elastic constants, frexural strength, fracture toughness and work of fracture are reported. The results are compared with those of commercial dense sintered Al2O3. The properties of produced materials have a strong relationship to not only the properties of Al2O3, SiC, Al and Si but also to the phase share and phase distribution. The composite materials are dense (0.5% porosity), tough (KIC = 3.4~6.4 MPa{{{{ SQRT { m} }}), strong ({{{{ sigma }}B = 170~345 MPa) and reasonably shrinkage free producible. The reinforcements is attained mainly through the plastic deformation of ductile metal phase.

• Korean Journal of Materials Research
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• v.14 no.11
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• pp.821-827
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• 2004

Titanium oxide thin films were prepared on Si(100) substrates by R.F. magnetron reactive sputtering at $30\sim200watt$ R.F power range, and annealed at $600^{\circ}C\sim800^{\circ}C$ for 1 hour. The properties of $TiO_2$ thin films were analyzed using x-ray, ${\alpha}-step$, ellipsometer, scanning electron microscopy, and FT-IR spectrometer. Upon in-situ depositions, the initial phase of $TiO_2$ thin film showed non-crystalline phase at R.F. power $30\sim100$ watt. The crosssection of $TiO_2$ thin films were sbserved to be the columnar structure. With the increasing R.F power and annealing temperature, the grain size, crystallinity, refractive index, and void size of titanium oxides showed a tended to increase. The FT-IR transmittance spectra of titanium oxide thin films have the obsorption band of Ti-O bond, Si-O bond, Si-O-Ti bond and O-H bond. With the increase of R.F. power and annealing temperature, these films have the stronger bond structures. It is considered that such a phenomena is due to phase transition and good crystallinity

• Journal of the Microelectronics and Packaging Society
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• v.7 no.3
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• pp.7-11
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• 2000

The low-voltage driven $SrTiO_3$ceramic varistor device was fabricated from $SrTiO_3$ powders prepared by co-precipitation method with $CuO-SiO_2$additives. Compare with conventional process, this process has advantages such as the reduction of the sintering temperature of $SrTiO_3$ ceramics by 100-$150^{\circ}C$ and the simplification of processing procedure. The non-linear coefficient value ($\alpha$) of the varistor showed 8.47 when it was sintered at $1350^{\circ}C$ for 2 h with 5 wt% additives in reducing atmosphere of 5% $H_2/N_2$ mixed gas. The low-voltage driven $SrTiO_3$ceramic varistor was obtained which has a breakdown voltage as low as 7 V.